公开(公告)号：US20120103804A1

公开(公告)日：2012-05-03

申请号：US13375404

申请日：2010-05-28

申请人： Masakatsu Ikisawa ,  Masataka Yahagi ,  Kozo Osada ,  Takashi Kakeno ,  Hideo Takami

发明人： Masakatsu Ikisawa ,  Masataka Yahagi ,  Kozo Osada ,  Takashi Kakeno ,  Hideo Takami

IPC分类号： C23C14/08 ,  H01L21/34

CPC分类号： C04B35/453 ,  C01G15/006 ,  C01P2006/12 ,  C01P2006/40 ,  C01P2006/80 ,  C04B35/6261 ,  C04B35/62655 ,  C04B35/62675 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/5409 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/604 ,  C04B2235/656 ,  C04B2235/6585 ,  C04B2235/724 ,  C04B2235/77 ,  C23C14/086 ,  C23C14/3414 ,  H01B1/08

摘要： An oxide sintered compact made of indium (In), gallium (Ga), zinc (Zn) and oxygen (O) and represented by a formula of InxGayZnzOa [wherein x/(x+y) is 0.2 to 0.8, z/(x+y+z) is 0.1 to 0.5, and a=(3/2)x+(3/2)y+z], wherein the concentration of volatile impurities contained in the oxide sintered compact is 20 ppm or less. Provided is technology for application to the production of an IGZO target capable of achieving high densification and low bulk resistance of the sputtering target, preventing swelling and cracks of the target during the production process, minimizing the generation of nodules, inhibiting abnormal discharge, and enabling DC sputtering.

摘要翻译： 由铟（In），镓（Ga），锌（Zn）和氧（O）制成并由式InxGayZnzOa表示的氧化物烧结体[其中x /（x + y）为0.2〜0.8，z /（x + y + z）为0.1〜0.5，a =（3/2）x +（3/2）y + z]，其中，所述氧化物烧结体中含有的挥发性杂质的浓度为20ppm以下。 提供了用于生产能够实现溅射靶的高致密化和低体积电阻的IGZO靶的技术，在生产过程中防止靶的膨胀和裂纹，使结节的产生最小化，抑制异常放电，并使能 DC溅射。

公开(公告)号：US09663405B2

公开(公告)日：2017-05-30

申请号：US13375404

申请日：2010-05-28

申请人： Masakatsu Ikisawa ,  Masataka Yahagi ,  Kozo Osada ,  Takashi Kakeno ,  Hideo Takami

发明人： Masakatsu Ikisawa ,  Masataka Yahagi ,  Kozo Osada ,  Takashi Kakeno ,  Hideo Takami

IPC分类号： C04B35/453 ,  C01G15/00 ,  C04B35/626 ,  C23C14/08 ,  C23C14/34 ,  H01B1/08

CPC分类号： C04B35/453 ,  C01G15/006 ,  C01P2006/12 ,  C01P2006/40 ,  C01P2006/80 ,  C04B35/6261 ,  C04B35/62655 ,  C04B35/62675 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/5409 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/604 ,  C04B2235/656 ,  C04B2235/6585 ,  C04B2235/724 ,  C04B2235/77 ,  C23C14/086 ,  C23C14/3414 ,  H01B1/08

摘要： An oxide sintered compact made of indium (In), gallium (Ga), zinc (Zn) and oxygen (O) and represented by a formula of InxGayZnzOa [wherein x/(x+y) is 0.2 to 0.8, z/(x+y+z) is 0.1 to 0.5, and a=(3/2)x+(3/2)y+z], wherein the concentration of volatile impurities contained in the oxide sintered compact is 20 ppm or less. Provided is technology for application to the production of an IGZO target capable of achieving high densification and low bulk resistance of the sputtering target, preventing swelling and cracks of the target during the production process, minimizing the generation of nodules, inhibiting abnormal discharge, and enabling DC sputtering.

公开(公告)号：US09045823B2

公开(公告)日：2015-06-02

申请号：US12864553

申请日：2009-06-05

申请人： Kozo Osada ,  Hiroaki Ohtsuka

发明人： Kozo Osada ,  Hiroaki Ohtsuka

IPC分类号： H01B1/02 ,  C23C14/34 ,  C04B35/453 ,  C04B35/626 ,  C04B35/634 ,  C23C14/08 ,  H01B1/08

CPC分类号： C23C14/3414 ,  C04B35/453 ,  C04B35/6261 ,  C04B35/62655 ,  C04B35/62675 ,  C04B35/63416 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/5409 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/604 ,  C04B2235/656 ,  C04B2235/6585 ,  C04B2235/77 ,  C04B2235/786 ,  C04B2235/80 ,  C23C14/086 ,  H01B1/08

摘要： Provided is a sintered oxide compact target for sputtering comprising indium (In), gallium (Ga), zinc (Zn), oxygen (O) and unavoidable impurities, wherein the composition ratio of the respective elements satisfies the Formula of InxGayZnzOa {wherein 0.2≦x/(x+y)≦0.8, 0.1≦z/(x+y+z)≦0.5, a=(3/2)x+(3/2)y+z}, and the number of ZnGa2O4 spinel phases having a grain size of 3 μm or larger existing in a 90 μm×90 μm area range of the sintered oxide compact target is 10 or less. With this sintered oxide compact target for sputtering comprising In, Ga, Zn, O and unavoidable impurities, the structure of the sintered compact target is improved, the formation of a phase to become the source of nodules is minimized, and the bulk resistance value is reduced. Whereby provided is a high density IGZO target capable of inhibiting abnormal discharge and which can be used in DC sputtering.

摘要翻译： 本发明提供一种用于溅射的烧结氧化物致密靶，其包含铟（In），镓（Ga），锌（Zn），氧（O）和不可避免的杂质，其中各元素的组成比满足InxGayZnzOa（其中0.2＆ ; x /（x + y）＆nlE; 0.8,0.1＆nlE; z /（x + y + z）＆nlE; 0.5，a =（3/2）x +（3/2）y + z} 存在于烧结氧化物成形体靶的90μm×90μm面积范围内的粒径为3μm以上的ZnGa 2 O 4尖晶石相为10以下。 利用这种用于溅射的烧结氧化物致密靶，包括In，Ga，Zn，O和不可避免的杂质，烧结体靶的结构得到改善，成为结核源的相的形成最小化，体电阻值为 减少 由此提供能够抑制异常放电并可用于DC溅射的高密度IGZO靶。

公开(公告)号：US20120319057A1

公开(公告)日：2012-12-20

申请号：US13592520

申请日：2012-08-23

申请人： Masakatsu Ikisawa ,  Masataka Yahagi ,  Kozo Osada ,  Takashi Kakeno

发明人： Masakatsu Ikisawa ,  Masataka Yahagi ,  Kozo Osada ,  Takashi Kakeno

IPC分类号： H01B1/08

CPC分类号： C23C14/086 ,  C04B35/01 ,  C04B35/457 ,  C04B35/6262 ,  C04B35/6263 ,  C04B35/62675 ,  C04B35/62695 ,  C04B35/63416 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/5445 ,  C04B2235/6562 ,  C04B2235/72 ,  C04B2235/77 ,  C23C14/5806

摘要： An amorphous film comprising indium, tin, calcium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca) and calcium is contained at a ratio of 0.1 to 2.0% based on an atomicity ratio of Ca/(In+Sn+Ca), and remnant is indium and oxygen, is provided. The film can be crystallized by annealing at 260° C. or lower in which resistivity of the film will be 0.4 mΩcm or less. In this manner, an ITO thin film for use as a display electrode or the like in a flat panel display can be made into an amorphous ITO film by way of sputter deposition without heating the substrate or adding water during deposition. This ITO film can be crystallized by annealing at a low temperature and will have low resistivity. Methods of producing such films and sintered compacts are provided.

摘要翻译： 包含铟，锡，钙和氧的非晶膜，其中锡以Sn /（In + Sn + Ca）原子数比为5〜15％，钙含量为0.1〜2.0的比例 基于Ca /（In + Sn + Ca）的原子数比，并且残留物是铟和氧。 膜可以在260℃以下的退火下进行结晶化，其中膜的电阻率为0.4mΩ/ cm以下。 以这种方式，在平板显示器中用作显示电极等的ITO薄膜可以通过溅射沉积而不加热基板或在沉积期间加水来制成非晶ITO膜。 该ITO膜可以通过在低温退火而结晶，并且具有低电阻率。 提供制造这种膜和烧结体的方法。

公开(公告)号：US07674404B2

公开(公告)日：2010-03-09

申请号：US12094024

申请日：2006-11-17

申请人： Kozo Osada

发明人： Kozo Osada

IPC分类号： H01B1/06 ,  B05D5/12

CPC分类号： C23C14/3414 ,  C04B35/453 ,  C04B35/62615 ,  C04B35/62695 ,  C04B2235/3217 ,  C04B2235/3244 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/5436 ,  C04B2235/5445 ,  C04B2235/77 ,  C23C14/08 ,  C23C14/086

摘要： Provided is a high-density gallium oxide/zinc oxide sintered sputtering target containing 20 massppm or greater of each zirconium oxide and aluminum oxide, wherein the total content thereof is less than 250 ppm. This gallium oxide (Ga2O3)/zinc oxide (ZnO) sputtering target (GZO target) improves the conductivity and bulk density of the target by adding trace amounts of specific elements. In other words, it is possible to obtain a target capable of increasing the sintered density, inhibiting the formation of nodules, and preventing the generation of abnormal electrical discharge and particles by improving the component composition. Further, provided are a method of forming a transparent conductive film with the use of the target, and a transparent conductive film formed thereby.

摘要翻译： 提供了含有20质量ppm以上的氧化锆和氧化铝的高密度氧化镓/氧化锌烧结溅射靶，其总含量小于250ppm。 该氧化镓（Ga 2 O 3）/氧化锌（ZnO）溅射靶（GZO靶）通过添加痕量的特定元素来提高靶的导电性和体积密度。 换句话说，可以获得能够提高烧结密度，抑制结节的形成，并且通过改善组分组成来防止产生异常放电和颗粒的目标。 此外，提供了使用靶形成透明导电膜的方法和由此形成的透明导电膜。

公开(公告)号：US08728358B2

公开(公告)日：2014-05-20

申请号：US13592520

申请日：2012-08-23

申请人： Masakatsu Ikisawa ,  Masataka Yahagi ,  Kozo Osada ,  Takashi Kakeno

发明人： Masakatsu Ikisawa ,  Masataka Yahagi ,  Kozo Osada ,  Takashi Kakeno

IPC分类号： H01B1/08 ,  B05D5/00 ,  C23C14/08

CPC分类号： C23C14/086 ,  C04B35/01 ,  C04B35/457 ,  C04B35/6262 ,  C04B35/6263 ,  C04B35/62675 ,  C04B35/62695 ,  C04B35/63416 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/5445 ,  C04B2235/6562 ,  C04B2235/72 ,  C04B2235/77 ,  C23C14/5806

摘要： An amorphous film comprising indium, tin, calcium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca) and calcium is contained at a ratio of 0.1 to 2.0% based on an atomicity ratio of Ca/(In+Sn+Ca), and remnant is indium and oxygen, is provided. The film can be crystallized by annealing at 260° C. or lower in which resistivity of the film will be 0.4 mΩcm or less. In this manner, an ITO thin film for use as a display electrode or the like in a flat panel display can be made into an amorphous ITO film by way of sputter deposition without heating the substrate or adding water during deposition. This ITO film can be crystallized by annealing at a low temperature and will have low resistivity. Methods of producing such films and sintered compacts are provided.

摘要翻译： 包含铟，锡，钙和氧的非晶膜，其中锡以Sn /（In + Sn + Ca）原子数比为5〜15％，钙含量为0.1〜2.0的比例 基于Ca /（In + Sn + Ca）的原子数比，并且残留物是铟和氧。 膜可以在260℃以下的退火下进行结晶化，其中膜的电阻率为0.4mΩ/ cm以下。 以这种方式，在平板显示器中用作显示电极等的ITO薄膜可以通过溅射沉积而不加热基板或在沉积期间加水来制成非晶ITO膜。 该ITO膜可以通过在低温退火而结晶，并且具有低电阻率。 提供制造这种膜和烧结体的方法。

公开(公告)号：US07682529B2

公开(公告)日：2010-03-23

申请号：US11993944

申请日：2006-06-06

申请人： Kozo Osada

发明人： Kozo Osada

IPC分类号： H01B1/08 ,  B05D5/12

CPC分类号： C23C14/3414 ,  C04B35/453 ,  C04B35/6261 ,  C04B2235/3244 ,  C04B2235/3284 ,  C04B2235/3286 ,  C04B2235/5445 ,  C04B2235/6585 ,  C23C14/086

摘要： Provided is a high density gallium oxide-zinc oxide series sintered body sputtering target for forming a transparent conductive film containing 20 to 2000 mass ppm of zirconium oxide. In a gallium oxide (Ga2O3)-zinc oxide (ZnO) series sputtering target (GZO series target) for forming a transparent conductive film, trace amounts of specific elements are added to obtain a target capable of improving the conductivity and the bulk density of the target; in other words, capable of improving the component composition to increase the sintered density, inhibit the formation of nodules, and prevent the generation of an abnormal electrical discharge and particles. Also provided are a method for forming a transparent conductive film using such a target, and a transparent conductive film formed thereby.

摘要翻译： 提供一种用于形成含有20〜2000质量ppm的氧化锆的透明导电膜的高密度氧化镓 - 氧化锌系列烧结体溅射靶。 在用于形成透明导电膜的氧化镓（Ga 2 O 3） - 氧化锌（ZnO）系列溅射靶（GZO系列靶）中，加入微量的特定元素以获得能够提高导电性和 目标; 换句话说，能够提高组分组成以提高烧结密度，抑制结节的形成，并且防止产生异常放电和颗粒。 还提供了使用这种靶形成透明导电膜的方法和由此形成的透明导电膜。

公开(公告)号：US20090120786A1

公开(公告)日：2009-05-14

申请号：US11994025

申请日：2006-05-30

申请人： Kozo Osada

发明人： Kozo Osada

IPC分类号： C23C14/34

CPC分类号： C23C14/3414 ,  C04B35/453 ,  C04B2235/3217 ,  C04B2235/3286 ,  C04B2235/5445 ,  C04B2235/656 ,  C04B2235/77 ,  C04B2235/96 ,  C23C14/086 ,  G02F1/13439

摘要： Provided is a high density gallium oxide-zinc oxide series sintered body sputtering target for forming a transparent conductive film containing 20 to 500 mass ppm of aluminum oxide, In a gallium oxide (Ga2O3)-zinc oxide (ZnO) series sputtering target (GZO series target) for forming a transparent conductive film, trace amounts of specific elements are added to obtain a target capable of improving the conductivity and the bulk density of the target; in other words, capable of improving the component composition to increase the sintered density, inhibit the formation of nodules, and prevent the generation of an abnormal electrical discharge and particles. Also provided are a method for forming a transparent conductive film using such a target, and a transparent conductive film formed thereby.

摘要翻译： 提供一种高密度氧化镓 - 氧化锌系列烧结体溅射靶，用于形成含有20〜500质量ppm的氧化铝的透明导电膜。在氧化镓（Ga 2 O 3） - 氧化锌（ZnO）系列溅射靶（GZO系列 靶）用于形成透明导电膜，添加微量的特定元素以获得能够改善靶的导电性和堆积密度的靶; 换句话说，能够提高组分组成以提高烧结密度，抑制结节的形成，并且防止产生异常放电和颗粒。 还提供了使用这种靶形成透明导电膜的方法和由此形成的透明导电膜。

公开(公告)号：US08277694B2

公开(公告)日：2012-10-02

申请号：US12668216

申请日：2008-07-04

申请人： Masakatsu Ikisawa ,  Masataka Yahagi ,  Kozo Osada ,  Takashi Kakeno

发明人： Masakatsu Ikisawa ,  Masataka Yahagi ,  Kozo Osada ,  Takashi Kakeno

IPC分类号： H01B1/08 ,  B05D5/12

CPC分类号： C23C14/086 ,  C04B35/01 ,  C04B35/457 ,  C04B35/6262 ,  C04B35/6263 ,  C04B35/62675 ,  C04B35/62695 ,  C04B35/63416 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/5445 ,  C04B2235/6562 ,  C04B2235/72 ,  C04B2235/77 ,  C23C14/5806

摘要： Provided is an amorphous film substantially comprised of indium, tin, calcium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca) and calcium is contained at a ratio of 0.1 to 2.0% based on an atomicity ratio of Ca/(In+Sn+Ca), and remnant is indium and oxygen. The film can be further crystallized by annealing at a temperature of 260° C. or lower in which resistivity of the film will be 0.4 mΩcm or less. An ITO thin film for use as a display electrode or the like in a flat panel display can be made into an amorphous ITO film by way of sputter deposition without heating the substrate or adding water during deposition. This ITO film is characterized in that it will crystallize by annealing at a temperature of 260° C. or less, which is not such a high temperature, and have low resistivity after being crystallized. Thus, the present invention aims to provide a method of producing such a film and a sintered compact for producing such a film.

摘要翻译： 提供了基本上由铟，锡，钙和氧组成的非晶体膜，其中以Sn /（In + Sn + Ca）的原子数比为5〜15％的比率含有锡，以含有钙的比例 相对于Ca /（In + Sn + Ca）的原子数比为0.1〜2.0％，残留物为铟和氧。 通过在260℃以下的温度下进行退火，可以使膜进一步结晶化，其中电阻率为0.4mΩ/ cm 2以上。 在平板显示器中用作显示电极等的ITO薄膜可以通过溅射沉积而不加热衬底或在沉积期间加水来制成非晶ITO膜。 该ITO膜的特征在于，通过在260℃以下的温度退火而结晶，其温度不高，结晶后电阻率低。 因此，本发明的目的在于提供一种制造这种膜的方法和用于制造这种膜的烧结体。

公开(公告)号：US20100140570A1

公开(公告)日：2010-06-10

申请号：US12668216

申请日：2008-07-04

申请人： Masakatsu Ikisawa ,  Masataka Yahagi ,  Kozo Osada ,  Takashi Kakeno

发明人： Masakatsu Ikisawa ,  Masataka Yahagi ,  Kozo Osada ,  Takashi Kakeno

IPC分类号： H01M4/88 ,  C23C14/34 ,  B29C71/02

CPC分类号： C23C14/086 ,  C04B35/01 ,  C04B35/457 ,  C04B35/6262 ,  C04B35/6263 ,  C04B35/62675 ,  C04B35/62695 ,  C04B35/63416 ,  C04B2235/3206 ,  C04B2235/3208 ,  C04B2235/3286 ,  C04B2235/3293 ,  C04B2235/5445 ,  C04B2235/6562 ,  C04B2235/72 ,  C04B2235/77 ,  C23C14/5806

摘要： Provided is an amorphous film substantially comprised of indium, tin, calcium and oxygen, wherein tin is contained at a ratio of 5 to 15% based on an atomicity ratio of Sn/(In+Sn+Ca) and calcium is contained at a ratio of 0.1 to 2.0% based on an atomicity ratio of Ca/(In+Sn+Ca), and remnant is indium and oxygen. The film can be further crystallized by annealing at a temperature of 260° C. or lower in which resistivity of the film will be 0.4 mΩcm or less. An ITO thin film for use as a display electrode or the like in a flat panel display can be made into an amorphous ITO film by way of sputter deposition without heating the substrate or adding water during deposition. This ITO film is characterized in that it will crystallize by annealing at a temperature of 260° C. or less, which is not such a high temperature, and have low resistivity after being crystallized. Thus, the present invention aims to provide a method of producing such a film and a sintered compact for producing such a film.

摘要翻译： 提供了基本上由铟，锡，钙和氧组成的非晶体膜，其中锡以Sn /（In + Sn + Ca）的原子数比计为5〜15％的比例，以含有钙的比例 相对于Ca /（In + Sn + Ca）的原子数比为0.1〜2.0％，残留物为铟和氧。 通过在260℃以下的温度下进行退火，可以使膜进一步结晶化，其中电阻率为0.4mΩ/ cm 2以上。 在平板显示器中用作显示电极等的ITO薄膜可以通过溅射沉积而不加热衬底或在沉积期间加水来制成非晶ITO膜。 该ITO膜的特征在于，通过在260℃以下的温度退火而结晶，其温度不高，结晶后电阻率低。 因此，本发明的目的在于提供一种制造这种膜的方法和用于制造这种膜的烧结体。