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    Germanium compound delivery device
    2.
    发明申请
    Germanium compound delivery device 审中-公开
    锗化合物输送装置

    公开(公告)号：US20070077733A1

    公开(公告)日：2007-04-05

    申请号：US11604475

    申请日：2006-11-27

    Applicant: Egbert Woelk ,  Deodatta Shenai-Khatkhate

    Inventor： Egbert Woelk ,  Deodatta Shenai-Khatkhate

    IPC: C23C16/00

    CPC classification number: C07F7/0807 ,  C07F7/30 ,  C23C16/18 ,  C23C16/22 ,  C23C16/28

    Abstract: Germanium compounds suitable for use as vapor phase deposition precursors for germanium films are provided. Methods of depositing films containing germanium using such compounds are also provided. Such germanium films are particularly useful in the manufacture of electronic devices.

    Abstract translation: 提供适合用作锗膜气相沉积前体的锗化合物。 还提供了使用这种化合物沉积含锗的薄膜的方法。 这种锗膜在电子器件的制造中特别有用。

    Organometallic composition
    3.
    发明申请
    Organometallic composition 审中-公开
    有机金属组成

    公开(公告)号：US20070154637A1

    公开(公告)日：2007-07-05

    申请号：US11316466

    申请日：2005-12-22

    Applicant: Deodatta Vinayak Shenai-Khatkhate ,  Egbert Woelk

    Inventor： Deodatta Vinayak Shenai-Khatkhate ,  Egbert Woelk

    IPC: C23C16/00

    CPC classification number: C23C16/22 ,  C30B25/02 ,  C30B29/08

    Abstract: Compositions including germanium compounds suitable for use as vapor phase deposition precursors for germanium-containing films are provided. Methods of depositing films containing germanium using such compositions are also provided. Such germanium-containing films are particularly useful in the manufacture of electronic devices.

    Abstract translation: 提供了包括适合用作含锗膜的气相沉积前体的锗化合物的组合物。 还提供了使用这种组合物沉积包含锗的薄膜的方法。 这种含锗膜在电子器件的制造中特别有用。

    Delivery system
    5.
    发明申请
    Delivery system 审中-公开
    输送系统

    公开(公告)号：US20060037540A1

    公开(公告)日：2006-02-23

    申请号：US11191751

    申请日：2005-07-28

    Applicant: Egbert Woelk ,  Deodatta Shenai-Khatkhate ,  Ronald Dicarlo

    Inventor： Egbert Woelk ,  Deodatta Shenai-Khatkhate ,  Ronald Dicarlo

    IPC: C23C16/00

    CPC classification number: C23C16/4481

    Abstract: Systems for delivering solid organometallic compounds in the vapor phase to reactors are provided. Such systems include a dual-chambered cylinder design for use with a frit of solid organometallic source material for chemical vapor phase deposition systems, and a method for transporting a carrier gas saturated with the organometallic compound for delivery into such deposition systems.

    Abstract translation: 提供了将气相中固体有机金属化合物输送到反应器的系统。 这种系统包括用于化学气相沉积系统的固体有机金属源材料的玻璃料的双腔圆筒设计，以及用于输送用有机金属化合物饱和的载气以便输送到这种沉积系统中的方法。

    Vapor delivery device, methods of manufacture and methods of use thereof
    6.
    发明授权
    Vapor delivery device, methods of manufacture and methods of use thereof 有权
    蒸气输送装置，制造方法及其使用方法

    公开(公告)号：US09243325B2

    公开(公告)日：2016-01-26

    申请号：US13552054

    申请日：2012-07-18

    Applicant: Egbert Woelk ,  Ronald L. DiCarlo, Jr.

    Inventor： Egbert Woelk ,  Ronald L. DiCarlo, Jr.

    IPC: C23C16/448 ,  C30B25/14 ,  C23C16/455 ,  C23C16/52 ,  C30B25/16 ,  C30B29/40

    CPC classification number: C23C16/45512 ,  B01F3/028 ,  B01F15/00331 ,  C23C16/4481 ,  C23C16/4486 ,  C23C16/45561 ,  C23C16/52 ,  C30B25/14 ,  C30B25/165 ,  C30B29/40 ,  Y10T137/0318 ,  Y10T137/2509

    Abstract: A method comprises transporting a first stream of a carrier gas to a delivery device that contains a liquid precursor compound. The method further comprises transporting a second stream of the carrier gas to a point downstream of the delivery device. The first stream after emanating from the delivery device and the second stream are combined to form a third stream, such that the dew point of the vapor of the liquid precursor compound in the third stream is lower than the temperature of the plumbing that transports the vapor to a CVD reactor or a plurality of CVD reactors. The flow direction of the first stream, the flow direction of the second stream and the flow direction of the third stream are unidirectional and are not opposed to each other.

    Abstract translation: 一种方法包括将载气的第一流输送到包含液体前体化合物的输送装置。 该方法还包括将载气的第二流输送到输送装置下游的点。 将从输送装置和第二料流发出的第一料流合并形成第三料流，使得第三料流中的液体前体化合物的蒸汽的露点低于输送蒸气的管道的温度 到CVD反应器或多个CVD反应器。 第一流的流动方向，第二流的流动方向和第三流的流动方向是单向的，并且彼此不相对。

    Vapor Delivery Device, Methods of Manufacture And Methods of Use Thereof
    7.
    发明申请
    Vapor Delivery Device, Methods of Manufacture And Methods of Use Thereof 有权
    蒸气输送装置，制造方法及其使用方法

    公开(公告)号：US20140020764A1

    公开(公告)日：2014-01-23

    申请号：US13552054

    申请日：2012-07-18

    Applicant: Egbert Woelk ,  Ronald L. DiCarlo, JR.

    Inventor： Egbert Woelk ,  Ronald L. DiCarlo, JR.

    IPC: G05D7/00 ,  F17D1/00

    CPC classification number: C23C16/45512 ,  B01F3/028 ,  B01F15/00331 ,  C23C16/4481 ,  C23C16/4486 ,  C23C16/45561 ,  C23C16/52 ,  C30B25/14 ,  C30B25/165 ,  C30B29/40 ,  Y10T137/0318 ,  Y10T137/2509

    Abstract: A method comprises transporting a first stream of a carrier gas to a delivery device that contains a liquid precursor compound. The method further comprises transporting a second stream of the carrier gas to a point downstream of the delivery device. The first stream after emanating from the delivery device and the second stream are combined to form a third stream, such that the dew point of the vapor of the liquid precursor compound in the third stream is lower than the temperature of the plumbing that transports the vapor to a CVD reactor or a plurality of CVD reactors. The flow direction of the first stream, the flow direction of the second stream and the flow direction of the third stream are unidirectional and are not opposed to each other.

    Abstract translation: 一种方法包括将载气的第一流输送到包含液体前体化合物的输送装置。 该方法还包括将载气的第二流输送到输送装置下游的点。 将从输送装置和第二料流发出的第一料流合并形成第三料流，使得第三料流中的液体前体化合物的蒸汽的露点低于输送蒸气的管道的温度 到CVD反应器或多个CVD反应器。 第一流的流动方向，第二流的流动方向和第三流的流动方向是单向的，并且彼此不相对。

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