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92 条记录 (耗时 0.024 秒)

    Electrochemical etching method for silicon substrate having PN junction
    61.
    发明授权
    Electrochemical etching method for silicon substrate having PN junction 有权
    具有PN结的硅衬底的电化学蚀刻方法

    公开(公告)号：US06194236B1

    公开(公告)日：2001-02-27

    申请号：US09247908

    申请日：1999-02-11

    申请人： Minekazu Sakai ,  Tsuyoshi Fukada ,  Yukihiko Tanizawa ,  Koki Mizuno ,  Yasutoshi Suzuki ,  Yoshitsugu Abe ,  Hiroshi Tanaka ,  Motoki Ito ,  Kazuhisa Ikeda ,  Hiroshi Okada

    发明人： Minekazu Sakai ,  Tsuyoshi Fukada ,  Yukihiko Tanizawa ,  Koki Mizuno ,  Yasutoshi Suzuki ,  Yoshitsugu Abe ,  Hiroshi Tanaka ,  Motoki Ito ,  Kazuhisa Ikeda ,  Hiroshi Okada

    IPC分类号： H01L2166

    CPC分类号： G01L9/0042 ,  H01L29/84 ,  Y10S438/977

    摘要： An etching method for a silicon substrate, which can easily smooth the etching surface of the (110)-oriented silicon, is disclosed. A container is filled with KOH solution. In the KOH solution is immersed a (110)-oriented silicon wafer having a PN junction and is also disposed a platinum electrode plate to face the silicon wafer. To between a platinum electrode of the silicon wafer and the platinum electrode plate are connected a constant voltage power source, an ammeter and a contact in series. A controller starts etching from one surface on which the PN junction is formed, and terminates voltage application when the specified time lapses after the formation of an anodic oxide film is equilibrated with the etching of the anodic oxide film on the etching surface on the PN junction part. In this case, the controller detects flowing current through the ammeter, and the point of time when the equilibrium state is obtained is the point of inflection of the detected current to the constant current after the peak thereof.

    摘要翻译： 公开了一种可以容易地平滑（110）取向的硅的蚀刻表面的硅衬底的蚀刻方法。 容器中充满KOH溶液。 在KOH溶液中浸渍具有PN结的（110）取向的硅晶片，并且还设置有与铂晶片相对的铂电极板。 在硅晶片的铂电极和铂电极板之间连接恒压电源，电流表和触点串联。 控制器从其上形成PN结的一个表面开始蚀刻，并且在阳极氧化膜形成之后指定的时间经过平衡后，在PN结的蚀刻表面上蚀刻阳极氧化膜来终止电压施加 部分。 在这种情况下，控制器检测通过电流表的流动电流，并且获得平衡状态的时间点是检测电流在其峰值之后的恒定电流的拐点。

    Method of producing semiconductor device by dicing
    62.
    发明授权
    Method of producing semiconductor device by dicing 失效
    通过切割制造半导体器件的方法

    公开(公告)号：US5998234A

    公开(公告)日：1999-12-07

    申请号：US825456

    申请日：1997-03-28

    申请人： Minoru Murata ,  Kenichi Ao ,  Yasutoshi Suzuki ,  Seiichiro Ishiou

    发明人： Minoru Murata ,  Kenichi Ao ,  Yasutoshi Suzuki ,  Seiichiro Ishiou

    IPC分类号： G01P15/12 ,  H01L21/301 ,  H01L21/78 ,  H01L29/06 ,  H01L29/84 ,  H01L21/00 ,  H01L21/44 ,  H01L21/48 ,  H01L21/50

    CPC分类号： H01L21/78 ,  H01L2224/16 ,  H01L29/0657 ,  H01L2924/01019 ,  H01L2924/10158 ,  H01L2924/10253

    摘要： On a back face of a silicon wafer before dicing, tapered grooves having sloped side walls are formed by anisotropic etching along with thin portions. Strain gauges are formed on each thin portion, thereby forming a sensor chip on the silicon wafer. The back face of the silicon wafer is attached to a self-adhesive seat. Thereafter, the silicon wafer is cut along the grooves by a dicing blade to divide it into each sensor chip. In dicing, the side faces of the dicing blade cut the sloped side walls of the tapered grooves. As a result, the silicon wafer is diced into individual sensor chip having no cracks and chippings.

    摘要翻译： 在切割之前的硅晶片的背面上，具有倾斜侧壁的锥形槽通过各向异性蚀刻以及薄的部分形成。 应变计形成在每个薄部分上，从而在硅晶片上形成传感器芯片。 硅晶片的背面安装在自粘座上。 此后，通过切割刀片沿着沟槽切割硅晶片，以将其划分成每个传感器芯片。 在切割中，切割刀片的侧面切割锥形槽的倾斜侧壁。 结果，将硅晶片切割成没有裂纹和碎屑的单独的传感器芯片。

    Semiconductor device and method for producing the same
    63.
    发明授权
    Semiconductor device and method for producing the same 失效
    半导体装置及其制造方法

    公开(公告)号：US5920106A

    公开(公告)日：1999-07-06

    申请号：US987500

    申请日：1997-12-09

    申请人： Nobukazu Oba ,  Toshio Ikuta ,  Minekazu Sakai ,  Tsuyoshi Fukada ,  Yasutoshi Suzuki

    发明人： Nobukazu Oba ,  Toshio Ikuta ,  Minekazu Sakai ,  Tsuyoshi Fukada ,  Yasutoshi Suzuki

    IPC分类号： G01L9/04 ,  B81B3/00 ,  G01L9/00 ,  H01L29/84

    CPC分类号： G01L9/0042

    摘要： A semiconductor pressure detection device includes a diaphragm formed at a portion of a P- conductivity type semiconductor substrate having a reduced thickness. Gauge resistors are formed on the surface of an N- conductivity type semiconductor layer formed on the substrate. An N+ conductivity type diffusion layer is formed in the N- conductivity type semiconductor layer to fix the electric potential of the N- conductivity type layer. The first conductivity type area surrounds the diaphragm. Therefore, when the N- conductivity type area is supplied with electric potential, the potential gradient in the N- conductivity type layer is small. Thus, the leakage current which flows to a pn junction between the gauge resistors and the N- conductivity type area is reduced.

    摘要翻译： 半导体压力检测装置包括形成在具有减小的厚度的P-导电型半导体衬底的部分处的膜片。 在基板上形成的N-导电型半导体层的表面上形成有规格电阻。 在N导电型半导体层中形成N +导电型扩散层，以固定N-导电型层的电位。 第一导电类型区域围绕隔膜。 因此，当N-导电类型区域被提供电位时，N-导电类型层中的电位梯度小。 因此，流向量规电阻器与N-导电型区域之间的pn结的漏电流减小。

    Method of making a compound semiconductor device
    67.
    发明授权
    Method of making a compound semiconductor device 失效
    制备化合物半导体器件的方法

    公开(公告)号：US5354412A

    公开(公告)日：1994-10-11

    申请号：US943416

    申请日：1992-09-11

    申请人： Yasutoshi Suzuki ,  Koki Mizuno

    发明人： Yasutoshi Suzuki ,  Koki Mizuno

    IPC分类号： H01L21/20 ,  C30B25/02 ,  H01L21/205 ,  H01L29/80 ,  H01L43/06 ,  C30B23/02

    CPC分类号： H01L21/02463 ,  C30B25/02 ,  C30B29/42 ,  H01L21/02381 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

    摘要： A process for epitaxially growing a compound semiconductor layer containing at least arsenic on a single crystal silicon substrate, which prevents the silicon impurity from intruding said compound semiconductor layer. The process comprises supplying one of the starting material gas, ASH.sub.3, into the reaction furnace to effect growth, but in such a manner that the AsH.sub.3 gas is pyrolyzed in advance to thereby supply arsenic alone either in an atomic or a molecular state. The GaAs layer is thus epitaxially grown on a single crystal silicon substrate in the crystal growing chamber, i.e., the reaction furnace in the apparatus, under an atmosphere comprising atomic or molecular arsenic at a temperature in the range of from 400.degree. to 650.degree. C. and at a vacuum degree of about 0.1 Pa. By thus epitaxially growing GaAs layer under an atmosphere comprising atomic or molecular arsenic, the intrusion of silicon impurity into the GaAs layer during its growth can be effectively prevented. Furthermore, an undoped GaAs layer, a p-GaAs layer, and an n-GaAs layer in this order can be deposited on the silicon substrate consecutively by using carbon (C) as a p-type dopant which can be supplied from trimethylgallium, thereby realizing a steep step-like junction at the n-GaAs/p-GaAs interface.

    摘要翻译： 一种用于在单晶硅衬底上外延生长至少包含砷的化合物半导体层的方法，其防止硅杂质侵入所述化合物半导体层。 该方法包括将一种起始原料气体ASH3供入反应炉中以实现生长，但是以使得AsH 3气体预先热解，从而以原子或分子状态单独供应砷。 因此GaAs层在晶体生长室中的单晶硅衬底上外延生长，即在包含原子或分子砷的气氛中在400至650℃范围内的装置中的反应炉 并且在约0.1Pa的真空度下，通过在包含原子或分子砷的气氛下外延生长GaAs层，可以有效地防止硅杂质在其生长期间侵入GaAs层。 此外，可以通过使用碳（C）作为可由三甲基镓提供的p型掺杂剂，连续地在硅衬底上沉积未掺杂的GaAs层，p-GaAs层和n-GaAs层，由此 在n-GaAs / p-GaAs界面实现陡峭的阶梯状结。

    Detection of manipulation of position apparatus for dazzle-free mirror
    68.
    发明授权
    Detection of manipulation of position apparatus for dazzle-free mirror 失效
    检测无位置镜的位置装置的操作

    公开(公告)号：US4669827A

    公开(公告)日：1987-06-02

    申请号：US701011

    申请日：1985-02-12

    申请人： Tsuyoshi Fukada ,  Yasutoshi Suzuki ,  Hiroshi Itoh ,  Shinya Ohmi ,  Kunihiko Hara

    发明人： Tsuyoshi Fukada ,  Yasutoshi Suzuki ,  Hiroshi Itoh ,  Shinya Ohmi ,  Kunihiko Hara

    IPC分类号： B60R1/04 ,  B60R1/08 ,  G02F1/13 ,  G02B17/00

    CPC分类号： B60R1/088

    摘要： A control apparatus for a dazzle-free reflection mirror of a vehicle is disclosed. The control apparatus is provided with a rear light sensor and a circuit for driving the reflection mirror into a dazzle-free operation in accordance with the intensity of the rear light detected by the rear light sensor when a light switch is turned on. The control apparatus is further provided with a mirror adjusting device for adjusting the reflection angle of the reflection mirror and a detecting circuit for detecting the adjusting operation of the mirror adjusting device. When the detecting circuit detects the adjusting operation, the dazzle-free operation of the reflection mirror is disabled even if intensive light is incident to the reflection mirror from the rear of the vehicle.

    摘要翻译： 公开了一种用于车辆的无眩光反射镜的控制装置。 控制装置设置有后光传感器和电路，用于当开关灯开启时，根据由后光传感器检测到的后光的强度将反射镜驱动到无眩光操作中。 控制装置还设置有用于调整反射镜的反射角的反射镜调节装置和用于检测反射镜调节装置的调节操作的检测电路。 当检测电路检测到调节操作时，即使强烈的光从车辆的后部入射到反射镜，反射镜的无眩光操作也被禁用。

    Apparatus for detecting the direction of light for dazzle-free mirrors
    69.
    发明授权
    Apparatus for detecting the direction of light for dazzle-free mirrors 失效
    用于检测无眩光镜的光线方向的装置

    公开(公告)号：US4669826A

    公开(公告)日：1987-06-02

    申请号：US701224

    申请日：1985-02-13

    申请人： Hiroshi Itoh ,  Shinya Ohmi ,  Yasutoshi Suzuki ,  Tsuyoshi Fukada ,  Kunihiko Hara

    发明人： Hiroshi Itoh ,  Shinya Ohmi ,  Yasutoshi Suzuki ,  Tsuyoshi Fukada ,  Kunihiko Hara

    IPC分类号： G02B5/08 ,  B60R1/04 ,  B60R1/08 ,  G02F1/13 ,  G02B17/00

    CPC分类号： B60R1/088

    摘要： In a vehicle having an interior room mirror and a pair of exterior right and left side mirrors, a single photo sensor is provided for detecting an intensity of light incident from the rear of the vehicle. A driving circuit drives both the room mirror and the side mirrors into a dazzle-free condition in common when the photo diode detects the intensive rear light. Alternatively two photo sensors are provided for detecting not only the intensity of the rear light but also direction of the rear light and both the room mirror and one of the right and left side mirrors are driven into the dazzle-free condition in accordance with both the intensity and direction of the rear light.

    摘要翻译： 在具有室内反射镜和一对外部左右侧反射镜的车辆中，设置有用于检测从车辆后方入射的光的强度的单个光传感器。 当光电二极管检测到强烈的后灯时，驱动电路将房间反射镜和侧视镜驱动到无眩光状态。 或者，提供两个光传感器，用于不仅检测后灯的强度，而且检测后灯的方向，并且将房间反射镜和右侧和后侧后视镜中的一个照射到两个 后灯的强度和方向。

    Automatic antidazzle semitransparent mirror
    70.
    发明授权
    Automatic antidazzle semitransparent mirror 失效
    自动防眩透半透明镜

    公开(公告)号：US4655549A

    公开(公告)日：1987-04-07

    申请号：US704401

    申请日：1985-02-22

    申请人： Yasutoshi Suzuki ,  Shinya Ohmi ,  Tsuyoshi Fukada ,  Hiroshi Itoh ,  Kunihiko Hara

    发明人： Yasutoshi Suzuki ,  Shinya Ohmi ,  Tsuyoshi Fukada ,  Hiroshi Itoh ,  Kunihiko Hara

    IPC分类号： G02B5/08 ,  B60R1/08 ,  G02F1/133 ,  G02F1/1335 ,  G02B17/00 ,  G02F1/13

    CPC分类号： G02F1/133553 ,  B60R1/088

    摘要： A reflection mirror using a liquid crystal cell is disclosed. A first thin film consisting of one of magnesium difluoride, silicon dioxide, silicon monoxide or titanium dioxide is formed on a glass substrate supporting the liquid crystal cell and a thin aluminum film is formed on the first thin film as a reflection mirror layer. Adhesiveness of the thin aluminum film to the glass substrate is strengthened by the first thin film. A second thin film is formed on the thin aluminum film to protect the same from being hurt. The reflection mirror may be used as a dazzle-free reflection mirror of an automotive vehicle.

    摘要翻译： 公开了一种使用液晶单元的反射镜。 在支撑液晶单元的玻璃基板上形成由二氟化镁，二氧化硅，一氧化硅或二氧化钛之一构成的第一薄膜，在第一薄膜上形成薄铝膜作为反射镜层。 通过第一薄膜来增强薄铝膜对玻璃基板的粘合性。 在薄铝膜上形成第二薄膜以保护其不被伤害。 反射镜可以用作机动车辆的无眩光反射镜。