公开(公告)号：US5949118A

公开(公告)日：1999-09-07

申请号：US637128

申请日：1996-04-24

申请人： Minekazu Sakai ,  Tsuyoshi Fukada ,  Koki Mizuno ,  Yasutoshi Suzuki ,  Yoshitsugu Abe ,  Hiroshi Tanaka ,  Motoki Ito ,  Kazuhisa Ikeda ,  Hiroshi Okada

发明人： Minekazu Sakai ,  Tsuyoshi Fukada ,  Koki Mizuno ,  Yasutoshi Suzuki ,  Yoshitsugu Abe ,  Hiroshi Tanaka ,  Motoki Ito ,  Kazuhisa Ikeda ,  Hiroshi Okada

IPC分类号： G01L9/00 ,  H01L29/84 ,  H01L29/82

CPC分类号： G01L9/0042 ,  H01L29/84 ,  Y10S438/977

摘要： An etching method for a silicon substrate, which can easily smooth the etching surface of the (110)-oriented silicon, is disclosed. A container is filled with KOH solution. In the KOH solution is immersed a (110)-oriented silicon wafer having a PN junction and is also disposed a platinum electrode plate to face the silicon wafer. To between a platinum electrode of the silicon wafer and the platinum electrode plate are connected a constant voltage power source, an ammeter and a contact in series. A controller starts etching from one surface on which the PN junction is formed, and terminates voltage application when the specified time lapses after the formation of an anodic oxide film is equilibrated with the etching of the anodic oxide film on the etching surface on the PN junction part. In this case, the controller detects flowing current through the ammeter, and the point of time when the equilibrium state is obtained is the point of inflection of the detected current to the constant current after the peak thereof.

摘要翻译： 公开了一种可以容易地平滑（110）取向的硅的蚀刻表面的硅衬底的蚀刻方法。 容器中充满KOH溶液。 在KOH溶液中浸渍具有PN结的（110）取向的硅晶片，并且还设置有与铂晶片相对的铂电极板。 在硅晶片的铂电极和铂电极板之间连接恒压电源，电流表和触点串联。 控制器从其上形成PN结的一个表面开始蚀刻，并且在阳极氧化膜形成之后指定的时间经过平衡后，在PN结的蚀刻表面上蚀刻阳极氧化膜来终止电压施加 部分。 在这种情况下，控制器检测通过电流表的流动电流，并且获得平衡状态的时间点是检测电流在其峰值之后的恒定电流的拐点。

公开(公告)号：US5594236A

公开(公告)日：1997-01-14

申请号：US356083

申请日：1994-12-14

申请人： Yasutoshi Suzuki ,  Kenichi Yokoyama ,  Koki Mizuno ,  Inao Toyoda ,  Yukio Tsuzuki

发明人： Yasutoshi Suzuki ,  Kenichi Yokoyama ,  Koki Mizuno ,  Inao Toyoda ,  Yukio Tsuzuki

IPC分类号： H01L31/0203 ,  H01L31/0216 ,  H01J40/14

CPC分类号： H01L31/0203 ,  H01L24/05 ,  H01L31/02164 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48463 ,  H01L2924/12036 ,  H01L2924/12043

摘要： A sunlight sensor is provided which detects sunlight by means of a semiconductor device and achieves the desired elevation angle characteristics. The sunlight sensor is implemented as a semiconductor device having p+ layers 10 and 11 as a light-responsive section and an n+ or n layer 9 as a light-nonresponsive section, and additionally having a light-detection element 2 which outputs a detection signal responsive to the amount of light received by the p+ layers 10 and 11. A light-transparent molding 4 is provided at least over the light-detection element 2, and additionally a light-cutoff mask 5 is provided on the transparent molding 4. The relative positions of the light-cutoff mask, the p+ layers 10 and 11, and the n+ or n layer 9 are then established. By doing this, of the shadow of the light-cutoff mask 5 which is created when incident sunlight 13 and 14 strikes the light-detection element, the surface area of at least the part of the shadow which falls on the p+ layers 10 and 11 and the part of the shadow that falls on the n+ or n layer 9 are controlled so as to obtain the desired elevation angle characteristics.

摘要翻译： 提供了通过半导体装置检测太阳光并实现期望的仰角特性的阳光传感器。 太阳光传感器被实现为具有作为光响应部分的p +层10和11以及作为光无响应部分的n +或n层9的半导体器件，并且另外具有响应性地输出检测信号的光检测元件2 相对于由p +层10和11接收的光量。透光模制件4至少设置在光检测元件2上，另外在透明模制件4上设置有光屏蔽5。 然后建立遮光掩模，p +层10和11以及n +或n层9的位置。 通过这样做，当入射太阳光13和14撞击光检测元件时产生的遮光掩模5的阴影中，至少部分阴影部分落在p +层10和11上的表面积 并且控制落在n +或n层9上的阴影的一部分以获得期望的仰角特性。

公开(公告)号：US06194236B1

公开(公告)日：2001-02-27

申请号：US09247908

申请日：1999-02-11

申请人： Minekazu Sakai ,  Tsuyoshi Fukada ,  Yukihiko Tanizawa ,  Koki Mizuno ,  Yasutoshi Suzuki ,  Yoshitsugu Abe ,  Hiroshi Tanaka ,  Motoki Ito ,  Kazuhisa Ikeda ,  Hiroshi Okada

发明人： Minekazu Sakai ,  Tsuyoshi Fukada ,  Yukihiko Tanizawa ,  Koki Mizuno ,  Yasutoshi Suzuki ,  Yoshitsugu Abe ,  Hiroshi Tanaka ,  Motoki Ito ,  Kazuhisa Ikeda ,  Hiroshi Okada

IPC分类号： H01L2166

CPC分类号： G01L9/0042 ,  H01L29/84 ,  Y10S438/977

摘要： An etching method for a silicon substrate, which can easily smooth the etching surface of the (110)-oriented silicon, is disclosed. A container is filled with KOH solution. In the KOH solution is immersed a (110)-oriented silicon wafer having a PN junction and is also disposed a platinum electrode plate to face the silicon wafer. To between a platinum electrode of the silicon wafer and the platinum electrode plate are connected a constant voltage power source, an ammeter and a contact in series. A controller starts etching from one surface on which the PN junction is formed, and terminates voltage application when the specified time lapses after the formation of an anodic oxide film is equilibrated with the etching of the anodic oxide film on the etching surface on the PN junction part. In this case, the controller detects flowing current through the ammeter, and the point of time when the equilibrium state is obtained is the point of inflection of the detected current to the constant current after the peak thereof.

摘要翻译： 公开了一种可以容易地平滑（110）取向的硅的蚀刻表面的硅衬底的蚀刻方法。 容器中充满KOH溶液。 在KOH溶液中浸渍具有PN结的（110）取向的硅晶片，并且还设置有与铂晶片相对的铂电极板。 在硅晶片的铂电极和铂电极板之间连接恒压电源，电流表和触点串联。 控制器从其上形成PN结的一个表面开始蚀刻，并且在阳极氧化膜形成之后指定的时间经过平衡后，在PN结的蚀刻表面上蚀刻阳极氧化膜来终止电压施加 部分。 在这种情况下，控制器检测通过电流表的流动电流，并且获得平衡状态的时间点是检测电流在其峰值之后的恒定电流的拐点。

公开(公告)号：US5770883A

公开(公告)日：1998-06-23

申请号：US715731

申请日：1996-09-19

申请人： Koki Mizuno ,  Hiroshi Okada ,  Inao Toyoda ,  Masakazu Kanosue ,  Yasutoshi Suzuki ,  Kenichi Yokoyama

发明人： Koki Mizuno ,  Hiroshi Okada ,  Inao Toyoda ,  Masakazu Kanosue ,  Yasutoshi Suzuki ,  Kenichi Yokoyama

IPC分类号： G01L9/00 ,  G01L9/06 ,  H01L27/02 ,  H01L29/82

CPC分类号： G01L9/06 ,  G01L9/0042 ,  G01L9/0054 ,  H01L27/0203

摘要： A pair of signal voltages outputted from a bridge circuit composed of plural strain gauges are linearly amplified individually by a pair of amplifiers, whereupon a difference between the pair of signal voltages is detected. The pair of amplifiers are formed respectively in regions that are symmetrical with each other on a chip. As a result, variations in the output characteristics between the amplifiers are decreased.

摘要翻译： 从由多个应变仪组成的桥式电路输出的一对信号电压被一对放大器单独线性地放大，从而检测一对信号电压之间的差。 一对放大器分别形成在芯片上彼此对称的区域中。 结果，放大器之间的输出特性的变化减小。

公开(公告)号：US5354412A

公开(公告)日：1994-10-11

申请号：US943416

申请日：1992-09-11

申请人： Yasutoshi Suzuki ,  Koki Mizuno

发明人： Yasutoshi Suzuki ,  Koki Mizuno

IPC分类号： H01L21/20 ,  C30B25/02 ,  H01L21/205 ,  H01L29/80 ,  H01L43/06 ,  C30B23/02

CPC分类号： H01L21/02463 ,  C30B25/02 ,  C30B29/42 ,  H01L21/02381 ,  H01L21/02546 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

摘要： A process for epitaxially growing a compound semiconductor layer containing at least arsenic on a single crystal silicon substrate, which prevents the silicon impurity from intruding said compound semiconductor layer. The process comprises supplying one of the starting material gas, ASH.sub.3, into the reaction furnace to effect growth, but in such a manner that the AsH.sub.3 gas is pyrolyzed in advance to thereby supply arsenic alone either in an atomic or a molecular state. The GaAs layer is thus epitaxially grown on a single crystal silicon substrate in the crystal growing chamber, i.e., the reaction furnace in the apparatus, under an atmosphere comprising atomic or molecular arsenic at a temperature in the range of from 400.degree. to 650.degree. C. and at a vacuum degree of about 0.1 Pa. By thus epitaxially growing GaAs layer under an atmosphere comprising atomic or molecular arsenic, the intrusion of silicon impurity into the GaAs layer during its growth can be effectively prevented. Furthermore, an undoped GaAs layer, a p-GaAs layer, and an n-GaAs layer in this order can be deposited on the silicon substrate consecutively by using carbon (C) as a p-type dopant which can be supplied from trimethylgallium, thereby realizing a steep step-like junction at the n-GaAs/p-GaAs interface.

摘要翻译： 一种用于在单晶硅衬底上外延生长至少包含砷的化合物半导体层的方法，其防止硅杂质侵入所述化合物半导体层。 该方法包括将一种起始原料气体ASH3供入反应炉中以实现生长，但是以使得AsH 3气体预先热解，从而以原子或分子状态单独供应砷。 因此GaAs层在晶体生长室中的单晶硅衬底上外延生长，即在包含原子或分子砷的气氛中在400至650℃范围内的装置中的反应炉 并且在约0.1Pa的真空度下，通过在包含原子或分子砷的气氛下外延生长GaAs层，可以有效地防止硅杂质在其生长期间侵入GaAs层。 此外，可以通过使用碳（C）作为可由三甲基镓提供的p型掺杂剂，连续地在硅衬底上沉积未掺杂的GaAs层，p-GaAs层和n-GaAs层，由此 在n-GaAs / p-GaAs界面实现陡峭的阶梯状结。

公开(公告)号：US20060225814A1

公开(公告)日：2006-10-12

申请号：US11401450

申请日：2006-04-11

申请人： Koki Mizuno ,  Hideki Matsuda ,  Seiji Kobayashi ,  Hisato Takeuchi ,  Katsunori Takada ,  Yutaka Kurebayashi

发明人： Koki Mizuno ,  Hideki Matsuda ,  Seiji Kobayashi ,  Hisato Takeuchi ,  Katsunori Takada ,  Yutaka Kurebayashi

IPC分类号： C23C8/32

CPC分类号： C23C8/32 ,  C23C8/02

摘要： A surface of a steel, as a material for a crankshaft, is nitrocarburized. The steel contains, as alloy elements C having a content 0.10 mass % or more 0.30 mass % or less, Si having a content 0.5 mass % or more and 0.3 mass % or less, Mn having a content 0.3 mass % or more and 1.5 mass % or less, Mo having a content 0.8 mass % or more and 2.0 mass % or less, Cr having a content 0.1 mass % or more and 1.0 mass % or less, and V having a content 0.1 mass % or more and 0.5 mass % or less, with a remainder consisting of Fe and inevitable impurities. The contents of the alloy elements fall within ranges: 2.0 mass %≦Mn+Cr+Mo≦3.0 mass %, 2.3 mass %≦C+Mo+5V ≦3.7 mass %, and 2.7 mass %≦2.16 Cr+Mo+2.54V≦4.0 mass %. If a steel sample extracted from a central portion of the nitrocarburized steel free from an influence of the nitrocarburizing treatment is austenitized at 1200° C. for one hour, and cooled to a room temperature so that a cooling rate at which the steel sample passes through a temperature range between 900° C. and 300° C. is 0.5° C./second, then an area percentage of a bainite structure in steel structures is 80% or more and a Vickers hardness measured at a cross section is 260 Hv or more and 330 Hv or less. A surface hardness of a nitrocarburized layer is 650 Hv or more, a formation depth of the nitrocarburized layer is 0.3 mm or more, and a hardness of the central portion is 340 Hv or more. Thereby a crankshaft which is excellent both in the machinability and in fatigue strength, even after nitrocarburizing treatment on the surface, is provided.

摘要翻译： 作为曲轴的材料的钢的表面被氮碳共渗。 钢含有含量为0.10质量％以上且0.30质量％以下的合金成分C，含有0.5质量％以上且0.3质量％以下的Si，含有0.3质量％以上且1.5质量％的Mn ％以下，含量为0.8质量％以上且2.0质量％以下的Mo为0.1质量％以上且1.0质量％以下的Cr，含量为0.1质量％以上至0.5质量％的V以下， 或更少，余量由Fe和不可避免的杂质组成。 合金元素含量在2.0质量％<= Mn + Cr + Mo <= 3.0质量％，2.3质量％<= C + Mo + 5V≤3.3质量％，2.7质量％<= 2.16Cr的范围内 + Mo + 2.54V <= 4.0质量％。 如果不受氮碳共渗处理的影响，从氮碳共渗钢的中央部提取的钢样品在1200℃下奥氏体化1小时，冷却至室温，钢样品通过的冷却速度 在900℃至300℃之间的温度范围为0.5℃/秒，则钢结构中贝氏体组织的面积百分比为80％以上，横截面测得的维氏硬度为260Hv或 多达330 Hv以下。 氮碳共渗层的表面硬度为650Hv以上，氮覆层的形成深度为0.3mm以上，中央部的硬度为340Hv以上。 因此，即使在表面进行氮碳共渗处理之后，也提供了在机械加工性和疲劳强度方面优异的曲轴。

公开(公告)号：US20080099107A1

公开(公告)日：2008-05-01

申请号：US11976646

申请日：2007-10-26

申请人： Kouji Ohbayashi ,  Kazuaki Okada ,  Taro Matsukawa ,  Yutaka Eto ,  Koki Mizuno ,  Kazumichi Tsukuda

发明人： Kouji Ohbayashi ,  Kazuaki Okada ,  Taro Matsukawa ,  Yutaka Eto ,  Koki Mizuno ,  Kazumichi Tsukuda

IPC分类号： C23C8/22 ,  B23P17/00 ,  C21D1/00 ,  C21D1/84

CPC分类号： C23C8/22 ,  B23P15/00 ,  C21D1/00 ,  C21D1/84 ,  C23C8/80 ,  F16H55/56 ,  Y10T29/49456

摘要： A method of manufacturing a sheave member for a belt-type continuously variable transmission includes a forming step wherein an intermediate product having a sheave surface is formed by forging a steel material; a carburization step wherein the intermediate product is heated in a carburization gas; a gradual cooling step wherein the cooling speed is equal to or less than 20° C./sec, at least until the temperature of the intermediate product has passed through the transformation point; a high-frequency electrical heating step wherein a selected portion(s) of the intermediate product is heated; a water quenching step wherein the selected portion is quenched by contact with water; and a finishing step wherein a grinding process is applied to the intermediate product to attain the final shape. In the cooling step, preferably, the intermediate product is contacted with a cooling gas at a pressure lower than atmospheric pressure.

摘要翻译： 一种制造带式无级变速器的滑轮构件的方法包括：形成步骤，其中通过锻造钢材形成具有滑轮表面的中间产品; 渗碳步骤，其中所述中间产物在渗碳气中加热; 至少直到中间产品的温度通过相变点为止，其中冷却速度等于或小于20℃/秒的逐渐冷却步骤; 高频电加热步骤，其中加热所述中间产物的选定部分; 水淬步骤，其中所选择的部分通过与水接触来淬火; 以及精加工步骤，其中将研磨工艺施加到中间产品以获得最终形状。 在冷却步骤中，优选地，中间产物在低于大气压的压力下与冷却气体接触。

公开(公告)号：US20070017609A1

公开(公告)日：2007-01-25

申请号：US11490955

申请日：2006-07-21

申请人： Manabu Kubota ,  Suguru Yoshida ,  Toshimi Tarui ,  Hideki Matsuda ,  Koki Mizuno ,  Tadashi Ohya

发明人： Manabu Kubota ,  Suguru Yoshida ,  Toshimi Tarui ,  Hideki Matsuda ,  Koki Mizuno ,  Tadashi Ohya

IPC分类号： C22C38/12

CPC分类号： C22C38/02 ,  C21D1/18 ,  C21D9/0093 ,  C22C38/04 ,  C22C38/12 ,  F16B35/00

摘要： Steel and steel shaped articles with an excellent delayed fracture resistance and a tensile strength of the 1600 MPa class or more, containing, by mass %, C: 0.20 to 0.60%, Si: 0.50% or less, Mn: over 0.10% to 3%, Al: 0.005 to 0.1%, Mo: over 3.0% to 10%, and, as needed, one or more of W: 0.01 to 10%, V: 0.05 to 1%, Ti: 0.01 to 1%, Nb: 0.01 to 1%, Cr: 0.10 to 2%, Ni: 0.05 to 1%, Cu: 0.05 to 0.5%, and B: 0.0003 to 0.01%, and a balance of Fe and unavoidable impurities and, further, a method of production comprising shaping the above steel to a desired shape (for example, a bolt shape), quenching it, then tempering it at 500 to 750° C. in temperature range.

摘要翻译： 具有优异的延迟抗断裂性和1600MPa级以上的抗拉强度的钢和钢制品，以质量％计含有C：0.20〜0.60％，Si：0.50％以下，Mn：超过0.10％〜3％ ％，Al：0.005〜0.1％，Mo：3.0％〜10％，W：0.01〜10％，V：0.05〜1％，Ti：0.01〜1％，Nb： 0.01〜1％，Cr：0.10〜2％，Ni：0.05〜1％，Cu：0.05〜0.5％，B：0.0003〜0.01％，余量由Fe和不可避免的杂质构成， 包括将上述钢成形为期望的形状（例如螺栓形状），淬火，然后在温度范围内在500-750℃下回火。

公开(公告)号：US07754029B2

公开(公告)日：2010-07-13

申请号：US11490955

申请日：2006-07-21

申请人： Manabu Kubota ,  Suguru Yoshida ,  Toshimi Tarui ,  Hideki Matsuda ,  Koki Mizuno ,  Tadashi Ohya

发明人： Manabu Kubota ,  Suguru Yoshida ,  Toshimi Tarui ,  Hideki Matsuda ,  Koki Mizuno ,  Tadashi Ohya

IPC分类号： C22C38/12 ,  C22C38/16 ,  C22C38/04 ,  C22C38/06

CPC分类号： C22C38/02 ,  C21D1/18 ,  C21D9/0093 ,  C22C38/04 ,  C22C38/12 ,  F16B35/00

摘要： Steel and steel shaped articles with an excellent delayed fracture resistance and a tensile strength of the 1600 MPa class or more, containing, by mass %, C: 0.20 to 0.60%, Si: 0.50% or less, Mn: over 0.10% to 3%, Al: 0.005 to 0.1%, Mo: over 3.0% to 10%, and, as needed, one or more of W: 0.01 to 10%, V: 0.05 to 1%, Ti: 0.01 to 1%, Nb: 0.01 to 1%, Cr: 0.10 to 2%, Ni: 0.05 to 1%, Cu: 0.05 to 0.5%, and B: 0.0003 to 0.01%, and a balance of Fe and unavoidable impurities and, further, a method of production comprising shaping the above steel to a desired shape (for example, a bolt shape), quenching it, then tempering it at 500 to 750° C. in temperature range.

摘要翻译： 具有优异的延迟抗断裂性和1600MPa级以上的抗拉强度的钢和钢制品，以质量％计含有C：0.20〜0.60％，Si：0.50％以下，Mn：超过0.10％〜3％ ％，Al：0.005〜0.1％，Mo：3.0％〜10％，W：0.01〜10％，V：0.05〜1％，Ti：0.01〜1％，Nb： 0.01〜1％，Cr：0.10〜2％，Ni：0.05〜1％，Cu：0.05〜0.5％，B：0.0003〜0.01％，余量由Fe和不可避免的杂质构成， 包括将上述钢成形为期望的形状（例如螺栓形状），淬火，然后在温度范围内在500-750℃下回火。

公开(公告)号：US20060137766A1

公开(公告)日：2006-06-29

申请号：US11319871

申请日：2005-12-27

申请人： Shuji Kozawa ,  Tatsuro Ochi ,  Hideo Kanisawa ,  Tomoko Serikawa ,  Koki Mizuno

发明人： Shuji Kozawa ,  Tatsuro Ochi ,  Hideo Kanisawa ,  Tomoko Serikawa ,  Koki Mizuno

IPC分类号： C22C38/22 ,  C22C38/24 ,  C23C8/22 ,  C23C8/32

CPC分类号： C23C8/22 ,  C23C8/32

摘要： The present invention provides case-hardening steel superior in tooth surface fatigue strength and a gear using the same used for parts of automobiles, construction machines, industrial machines, etc., that is case-hardening steel superior in tooth surface fatigue strength containing, by wt %, C: 0.1 to 0.3%, Si: 1.0 to 2.0%, Mn: 0.3 to 2.0%, S: 0.005 to 0.05%, Cr: 1.0 to 2.6%, Mo: 0.8 to 4.0%, V: 0.1 to 0.3%, Al: 0.001 to 0.2%, and N: 0.003 to 0.03%, limiting P to 0.03% or less, and having as a balance iron and unavoidable impurities, and satisfies the following expression, 31Si (%)+15Mn (%)+23Cr (%)+26Mo (%)+100V (%) is 100 or more, and a gear comprised of case-hardening steel and having an X-ray diffraction half width at a depth of 50 mm from the surface of the gear of 6.4 degrees or more.

摘要翻译： 本发明提供了表面疲劳强度优异的表面硬化钢和使用其用于汽车，工程机械，工业机械等部件的齿轮，其是表面硬化钢，其表面疲劳强度优异，包括由 重量％，C：0.1〜0.3％，Si：1.0〜2.0％，Mn：0.3〜2.0％，S：0.005〜0.05％，Cr：1.0〜2.6％，Mo：0.8〜4.0％，V：0.1〜 ％，Al：0.001〜0.2％，N：0.003〜0.03％，将P限制在0.03％以下，余量为铁和不可避免的杂质，满足下式：31Si（％）+ 15Mn（％） + 23Cr（％）+ 26Mo（％）+ 100V（％）为100以上，由外壳硬化钢构成的齿轮与齿轮表面的距离为50mm的X射线衍射半值宽度 为6.4度以上。