公开(公告)号：US20150179751A1

公开(公告)日：2015-06-25

申请号：US14636546

申请日：2015-03-03

申请人： Sensor Electronic Technology, Inc.

发明人： Mikhail Gaevski ,  Grigory Simin ,  Maxim S. Shatalov ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC分类号： H01L29/45 ,  H01L33/36 ,  H01L33/32 ,  H01L29/20 ,  H01L21/283 ,  H01L21/324 ,  H01L29/40 ,  H01L33/00 ,  H01L29/778

CPC分类号： H01L29/452 ,  H01L21/28575 ,  H01L21/28587 ,  H01L21/28593 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/41766 ,  H01L29/7787 ,  H01L33/382 ,  H01L2933/0016

摘要： A perforating ohmic contact to a semiconductor layer in a semiconductor structure is provided. The perforating ohmic contact can include a set of perforating elements, which can include a set of metal protrusions laterally penetrating the semiconductor layer(s). The perforating elements can be separated from one another by a characteristic length scale selected based on a sheet resistance of the semiconductor layer and a contact resistance per unit length of a metal of the perforating ohmic contact contacting the semiconductor layer. The structure can be annealed using a set of conditions configured to ensure formation of the set of metal protrusions.

摘要翻译： 提供了与半导体结构中的半导体层的穿孔欧姆接触。 穿孔欧姆接触可以包括一组穿孔元件，其可以包括横向渗透半导体层的一组金属突起。 穿孔元件可以通过基于半导体层的薄层电阻选择的特征长度刻度和接触半导体层的穿孔欧姆接触金属的每单位长度的接触电阻彼此分离。 该结构可以使用一组条件进行退火，所述条件被配置成确保形成该组金属突起。

公开(公告)号：US20150165079A1

公开(公告)日：2015-06-18

申请号：US14629508

申请日：2015-02-24

申请人： Sensor Electronic Technology, Inc.

发明人： Michael Shur ,  Maxim S. Shatalov ,  Timothy James Bettles ,  Yuri Bilenko ,  Saulius Smetona ,  Alexander Dobrinsky ,  Remigijus Gaska ,  Igor Agafonov

IPC分类号： A61L2/10 ,  F21V9/06

CPC分类号： A61L2/10 ,  A61L2202/14 ,  A61L2202/21 ,  F21V9/06 ,  F25D17/042 ,  F25D2317/0417

摘要： Ultraviolet radiation is directed within an area. Items located within the area and/or one or more conditions of the area are monitored over a period of time. Based on the monitoring, ultraviolet radiation sources are controlled by adjusting a direction, an intensity, a pattern, and/or a spectral power of the ultraviolet radiation generated by the ultraviolet radiation source. Adjustments to the ultraviolet radiation source(s) can correspond to one of a plurality of selectable operating configurations including a storage life preservation operating configuration, a disinfection operating configuration, and an ethylene decomposition operating configuration.

摘要翻译： 紫外线辐射指向一个区域内。 在一段时间内监视位于该区域内的区域和/或该区域的一个或多个条件。 基于监测，通过调节由紫外线辐射源产生的紫外线辐射的方向，强度，图案和/或光谱功率来控制紫外线辐射源。 对紫外线辐射源的调整可以对应于多个可选操作配置中的一个，包括存储寿命保存操作配置，消毒操作配置和乙烯分解操作配置。

公开(公告)号：US09034271B2

公开(公告)日：2015-05-19

申请号：US14012682

申请日：2013-08-28

申请人： Sensor Electronic Technology, Inc.

发明人： Michael Shur ,  Maxim Shatalov ,  Timothy James Bettles ,  Yuri Bilenko ,  Saulius Smetona ,  Alexander Dobrinsky ,  Remigijus Gaska

IPC分类号： A61L2/10 ,  F25D27/00 ,  F25D17/04

CPC分类号： A61L2/10 ,  A61L2202/14 ,  A61L2202/21 ,  F25D17/042 ,  F25D27/005 ,  F25D2317/0417

摘要： Ultraviolet radiation is directed within an area. Items located within the area and/or one or more conditions of the area are monitored over a period of time. Based on the monitoring, ultraviolet radiation sources are controlled by adjusting a direction, an intensity, a pattern, and/or a spectral power of the ultraviolet radiation generated by the ultraviolet radiation source. Adjustments to the ultraviolet radiation source(s) can correspond to one of a plurality of selectable operating configurations including a storage life preservation operating configuration, a disinfection operating configuration, and an ethylene decomposition operating configuration.

摘要翻译： 紫外线辐射指向一个区域内。 在一段时间内监视位于该区域内的区域和/或该区域的一个或多个条件。 基于监测，通过调节由紫外线辐射源产生的紫外线辐射的方向，强度，图案和/或光谱功率来控制紫外线辐射源。 对紫外线辐射源的调整可以对应于多个可选操作配置中的一个，包括存储寿命保存操作配置，消毒操作配置和乙烯分解操作配置。

公开(公告)号：US20150108428A1

公开(公告)日：2015-04-23

申请号：US14519230

申请日：2014-10-21

申请人： Sensor Electronic Technology, Inc.

发明人： Maxim S. Shatalov ,  Rakesh Jain ,  Jinwei Yang ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC分类号： H01L29/15 ,  H01L33/00 ,  H01L33/06 ,  H01L29/06 ,  H01L33/24 ,  H01L33/32 ,  H01L29/20 ,  H01L29/205 ,  H01L21/02 ,  H01L33/12

CPC分类号： H01L29/151 ,  H01L21/0242 ,  H01L21/0243 ,  H01L21/02458 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02587 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/2003 ,  H01L29/205 ,  H01L33/0075 ,  H01L33/12

摘要： A heterostructure for use in an electronic or optoelectronic device is provided. The heterostructure includes one or more composite semiconductor layers. The composite semiconductor layer can include sub-layers of varying morphology, at least one of which can be formed by a group of columnar structures (e.g., nanowires). Another sub-layer in the composite semiconductor layer can be porous, continuous, or partially continuous.

摘要翻译： 提供了用于电子或光电子器件的异质结构。 异质结构包括一个或多个复合半导体层。 复合半导体层可以包括不同形态的子层，其中至少一个可以由一组柱状结构（例如，纳米线）形成。 复合半导体层中的另一个子层可以是多孔的，连续的或部分连续的。

公开(公告)号：US20150083994A1

公开(公告)日：2015-03-26

申请号：US14493388

申请日：2014-09-23

申请人： Sensor Electronic Technology, Inc.

发明人： Rakesh Jain ,  Maxim S. Shatalov ,  Jinwei Yang ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC分类号： H01L33/00 ,  H01L33/12 ,  H01L33/14 ,  H01L33/06

CPC分类号： H01L33/0025 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/04 ,  H01L33/06 ,  H01L33/12 ,  H01L33/145 ,  H01L33/32

摘要： Heterostructures for use in optoelectronic devices are described. One or more parameters of the heterostructure can be configured to improve the reliability of the corresponding optoelectronic device. The materials used to create the active structure of the device can be considered in configuring various parameters the n-type and/or p-type sides of the heterostructure.

摘要翻译： 描述了用于光电子器件的异质结构。 可以配置异质结构的一个或多个参数以提高相应光电器件的可靠性。 在构造异质结构的n型和/或p型侧的各种参数时，可以考虑用于形成器件的有源结构的材料。

公开(公告)号：US20150054570A1

公开(公告)日：2015-02-26

申请号：US14527203

申请日：2014-10-29

申请人： Sensor Electronic Technology, Inc.

发明人： Grigory Simin ,  Michael Shur ,  Remigijus Gaska

IPC分类号： G05F3/02 ,  H01L29/40 ,  H01L29/20

CPC分类号： G05F3/02 ,  H01L29/2003 ,  H01L29/402 ,  H01L29/404 ,  H01L29/42316 ,  H01L29/4232 ,  H01L29/7786 ,  H01L29/872

摘要： A circuit including a semiconductor device having a set of space-charge control electrodes is provided. The set of space-charge control electrodes is located between a first terminal, such as a gate or a cathode, and a second terminal, such as a drain or an anode, of the device. The circuit includes a biasing network, which supplies an individual bias voltage to each of the set of space-charge control electrodes. The bias voltage for each space-charge control electrode can be: selected based on the bias voltages of each of the terminals and a location of the space-charge control electrode relative to the terminals and/or configured to deplete a region of the channel under the corresponding space-charge control electrode at an operating voltage applied to the second terminal.

摘要翻译： 提供了包括具有一组空间电荷控制电极的半导体器件的电路。 该组空间电荷控制电极位于该器件的第一端子（例如栅极或阴极）和第二端子（例如漏极或阳极）之间。 电路包括偏置网络，其向每组空间电荷控制电极中的每一个提供单独的偏置电压。 每个空间电荷控制电极的偏置电压可以是：基于每个端子的偏置电压和空间电荷控制电极相对于端子的位置来选择和/或被配置为消耗通道下方的区域 对应的空间电荷控制电极施加到第二端子的工作电压。

公开(公告)号：US08927959B2

公开(公告)日：2015-01-06

申请号：US13803681

申请日：2013-03-14

申请人： Sensor Electronic Technology, Inc.

发明人： Remigijus Gaska ,  Maxim S Shatalov ,  Michael Shur ,  Alexander Dobrinsky

IPC分类号： H01L33/32 ,  H01L33/04 ,  H01L33/10 ,  H01L33/06 ,  H01L33/22 ,  H01L33/38 ,  H01L33/40

CPC分类号： H01L33/06 ,  G06F17/5068 ,  H01L33/0025 ,  H01L33/0075 ,  H01L33/04 ,  H01L33/10 ,  H01L33/145 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/385 ,  H01L33/405 ,  H01L33/46 ,  H01L2933/0058

摘要： A light emitting diode is provided, which includes an n-type contact layer and a light generating structure adjacent to the n-type contact layer. The light generating structure includes a set of quantum wells. The contact layer and light generating structure can be configured so that a difference between an energy of the n-type contact layer and an electron ground state energy of a quantum well is greater than an energy of a polar optical phonon in a material of the light generating structure. Additionally, the light generating structure can be configured so that its width is comparable to a mean free path for emission of a polar optical phonon by an electron injected into the light generating structure.

摘要翻译： 提供一种发光二极管，其包括n型接触层和与n型接触层相邻的发光结构。 光产生结构包括一组量子阱。 接触层和发光结构可以被配置为使得n型接触层的能量与量子阱的电子基态能量之间的差大于光的材料中的极性光学声子的能量 生成结构。 另外，发光结构可以被配置为使得其宽度与用于通过注入到光产生结构中的电子发射极性光学声子的平均自由程相当。

公开(公告)号：US20140264076A1

公开(公告)日：2014-09-18

申请号：US14217689

申请日：2014-03-18

申请人： Sensor Electronic Technology, Inc.

发明人： Timothy James Bettles ,  Alexander Dobrinsky ,  Michael Shur ,  Remigijus Gaska

IPC分类号： A61L2/10

CPC分类号： A61L2/10 ,  A61L2/00 ,  A61L9/00

摘要： A solution in which an ultraviolet radiation source is mounted on a flexible substrate is provided. The flexible substrate is capable of having a deformation curvature of at least 0.1 inverse meters. The flexible substrate may be incorporated within an existing enclosure or included in the enclosure. The flexible substrate can be utilized as part of a solution for disinfecting one or more items located within the enclosure. In this case, while the items are within the enclosure, ultraviolent radiation is generated and directed at the items. Wiring for the ultraviolet radiation source can be embedded within the flexible substrate and the flexible substrate can have at least one of: a wave-guiding structure, an ultraviolet absorbing surface, or an ultraviolet reflective surface. A control system can be utilized to manage generation of the ultraviolet radiation within the enclosure.

摘要翻译： 提供紫外线辐射源安装在柔性基板上的方案。 柔性基板能够具有至少0.1毫米的变形曲率。 柔性基板可以结合在现有外壳内或包含在外壳中。 柔性基底可用作消毒位于外壳内的一个或多个物品的溶液的一部分。 在这种情况下，当物品在外壳内时，会产生超轻的辐射并指向物品。 紫外线辐射源的接线可以嵌入在柔性基板内，并且柔性基板可以具有波导结构，紫外线吸收表面或紫外线反射表面中的至少一个。 可以利用控制系统来管理外壳内的紫外线辐射的产生。

公开(公告)号：US20140239312A1

公开(公告)日：2014-08-28

申请号：US14189012

申请日：2014-02-25

申请人： Sensor Electronic Technology, Inc.

发明人： Maxim S. Shatalov ,  Alexander Dobrinsky ,  Alexander Lunev ,  Rakesh Jain ,  Jinwei Yang ,  Michael Shur ,  Remigijus Gaska

IPC分类号： H01L33/32

CPC分类号： H01L33/0025 ,  H01L33/0075 ,  H01L33/10 ,  H01L33/32 ,  H01L33/46 ,  H01S5/0224

摘要： A semiconductor layer including a plurality of inhomogeneous regions is provided. Each inhomogeneous region has one or more attributes that differ from a material forming the semiconductor layer. The inhomogeneous regions can include one or more regions configured based on radiation having a target wavelength. These regions can include transparent and/or reflective regions. The inhomogeneous regions also can include one or more regions having a higher conductivity than a conductivity of the radiation-based regions, e.g., at least ten percent higher.

摘要翻译： 提供包括多个不均匀区域的半导体层。 每个不均匀区域具有与形成半导体层的材料不同的一个或多个属性。 不均匀区域可以包括基于具有目标波长的辐射配置的一个或多个区域。 这些区域可以包括透明和/或反射区域。 不均匀区域还可以包括具有比基于辐射的区域的电导率更高的导电率的一个或多个区域，例如至少高10％。

公开(公告)号：US20140202962A1

公开(公告)日：2014-07-24

申请号：US14157874

申请日：2014-01-17

申请人： SENSOR ELECTRONIC TECHNOLOGY, INC.

发明人： Yuri Bilenko ,  Alexander Dobrinsky ,  Saulius Smetona ,  Michael Shur ,  Remigijus Gaska ,  Timothy James Bettles

IPC分类号： C02F1/32

CPC分类号： C02F1/325 ,  C02F1/001 ,  C02F1/008 ,  C02F2201/3222 ,  C02F2201/3227 ,  C02F2201/3228 ,  C02F2201/326 ,  C02F2209/001 ,  C02F2209/005 ,  C02F2301/028 ,  C02F2303/04 ,  C02F2307/04

摘要： A solution for treating a fluid, such as water, is provided. The solution determines an ultraviolet transparency of a fluid before or as the fluid enters a disinfection chamber. In the disinfection chamber, the fluid can be irradiated by ultraviolet radiation to harm microorganisms that may be present in the fluid. One or more attributes of the disinfection chamber, fluid flow, and/or ultraviolet radiation can be adjusted based on the transparency to provide more efficient irradiation and/or higher disinfection rates.

摘要翻译： 提供了一种用于处理诸如水的流体的溶液。 该溶液在流体进入消毒室之前或当流体进入消毒室时确定流体的紫外线透明度。 在消毒室中，可以通过紫外线照射流体来损害可能存在于流体中的微生物。 可以基于透明度来调节消毒室，流体流动和/或紫外线辐射的一个或多个属性，以提供更有效的照射和/或更高的消毒率。