公开(公告)号：US10755692B2

公开(公告)日：2020-08-25

申请号：US16009319

申请日：2018-06-15

Applicant: Butterfly Network, Inc.

Inventor： Tyler S. Ralston ,  Nevada J. Sanchez

IPC: G01S15/89 ,  G10K11/34 ,  G01S7/52

Abstract: A digital microbeamformer apparatus for an ultrasound system includes a plurality of interconnected nodes, with one or more nodes corresponding to at least one channel of the ultrasound system. One or more nodes is configured to communicate data with one or more other nodes via a corresponding beamforming data path, and one or more nodes is coupled to a data output bus shared by one or more other nodes.

公开(公告)号：US10187020B2

公开(公告)日：2019-01-22

申请号：US14957395

申请日：2015-12-02

Applicant: Butterfly Network, Inc.

Inventor： Kailiang Chen ,  Keith G. Fife ,  Nevada J. Sanchez ,  Andrew J. Casper ,  Tyler S. Ralston

IPC: H03F3/16 ,  A61B5/00 ,  A61B8/00 ,  H03F1/08 ,  H03F3/45 ,  G01S7/52 ,  A61B8/08

Abstract: A variable current trans-impedance amplifier (TIA) for an ultrasound device is described. The TIA may be coupled to an ultrasonic transducer to amplify an output signal of the ultrasonic transducer representing an ultrasound signal received by the ultrasonic transducer. During acquisition of the ultrasound signal by the ultrasonic transducer, one or more current sources in the TIA may be varied.

公开(公告)号：US10177139B2

公开(公告)日：2019-01-08

申请号：US15865774

申请日：2018-01-09

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Keith G. Fife ,  Nevada J. Sanchez ,  Susan A. Alie

IPC: H01L23/528 ,  B81B3/00 ,  H01L27/06 ,  B06B1/02 ,  B81B7/00 ,  B81C1/00 ,  H01L21/3213 ,  H01L21/56 ,  H01L21/768 ,  H01L21/8238 ,  H01L23/522 ,  A61B8/00 ,  H01L27/092

Abstract: Micromachined ultrasonic transducers formed in complementary metal oxide semiconductor (CMOS) wafers are described, as are methods of fabricating such devices. A metallization layer of a CMOS wafer may be removed by sacrificial release to create a cavity of an ultrasonic transducer. Remaining layers may form a membrane of the ultrasonic transducer.

公开(公告)号：US10175206B2

公开(公告)日：2019-01-08

申请号：US15689863

申请日：2017-08-29

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Susan A. Alie ,  Keith G. Fife ,  Nevada J. Sanchez ,  Tyler S. Ralston

IPC: G01N29/24 ,  B81C1/00 ,  B06B1/02 ,  A61B8/00 ,  B81B7/00

Abstract: Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.

公开(公告)号：US20180257927A1

公开(公告)日：2018-09-13

申请号：US15453846

申请日：2017-03-08

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Susan A. Alie ,  Keith G. Fife ,  Nevada J. Sanchez ,  Tyler S. Ralston ,  Jaime Scott Zahorian

IPC: B81C1/00 ,  B81B7/00 ,  B06B1/06 ,  B06B1/02

CPC classification number: B81C1/00238 ,  B06B1/0292 ,  B06B1/0622 ,  B81B7/008 ,  B81B2201/038 ,  B81B2203/0127 ,  B81B2203/0315 ,  B81B2207/012 ,  B81B2207/07 ,  B81C2201/013 ,  B81C2203/0118 ,  B81C2203/0792

Abstract: Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.

公开(公告)号：US20180130795A1

公开(公告)日：2018-05-10

申请号：US15865774

申请日：2018-01-09

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Keith G. Fife ,  Nevada J. Sanchez ,  Susan A. Alie

IPC: H01L27/06 ,  H01L27/092 ,  A61B8/00 ,  B06B1/02 ,  B81B3/00 ,  H01L23/528 ,  H01L23/522 ,  H01L21/8238 ,  H01L21/768 ,  H01L21/56 ,  H01L21/3213 ,  B81C1/00 ,  B81B7/00

CPC classification number: H01L27/0617 ,  A61B8/00 ,  A61B8/4494 ,  B06B1/02 ,  B06B1/0292 ,  B06B2201/51 ,  B81B3/0021 ,  B81B7/0006 ,  B81B2201/0271 ,  B81C1/00158 ,  B81C1/00246 ,  B81C2203/0735 ,  B81C2203/0771 ,  H01L21/32134 ,  H01L21/56 ,  H01L21/768 ,  H01L21/76838 ,  H01L21/823871 ,  H01L23/5226 ,  H01L23/528 ,  H01L27/0688 ,  H01L27/092 ,  H01L2224/16225

Abstract: Micromachined ultrasonic transducers formed in complementary metal oxide semiconductor (CMOS) wafers are described, as are methods of fabricating such devices. A metallization layer of a CMOS wafer may be removed by sacrificial release to create a cavity of an ultrasonic transducer. Remaining layers may form a membrane of the ultrasonic transducer.

公开(公告)号：US09944514B2

公开(公告)日：2018-04-17

申请号：US15626801

申请日：2017-06-19

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Keith G. Fife ,  Tyler S. Ralston ,  Gregory L. Charvat ,  Nevada J. Sanchez

IPC: H01L29/84 ,  B81C1/00 ,  B06B1/02 ,  G01N29/24 ,  H04R19/00 ,  B81B7/00

CPC classification number: B81C1/00301 ,  B06B1/02 ,  B06B1/0292 ,  B81B7/007 ,  B81C1/00134 ,  B81C1/00158 ,  B81C1/00246 ,  B81C2201/0195 ,  B81C2203/0735 ,  B81C2203/0771 ,  G01N29/2406 ,  H01L29/84 ,  H04R19/005

Abstract: Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.

公开(公告)号：US09910018B2

公开(公告)日：2018-03-06

申请号：US15177977

申请日：2016-06-09

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Susan A. Alie ,  Keith G. Fife ,  Nevada J. Sanchez ,  Tyler S. Ralston

IPC: H01L29/84 ,  H01L21/30 ,  G01N29/24 ,  B81C1/00 ,  B06B1/02 ,  A61B8/00 ,  B81B7/00

CPC classification number: G01N29/2406 ,  A61B8/4483 ,  B06B1/0292 ,  B81B7/007 ,  B81B2201/0271 ,  B81C1/00238 ,  B81C1/00301 ,  B81C2201/019 ,  B81C2203/036 ,  B81C2203/0792 ,  H01L2224/4813 ,  H01L2924/0002 ,  H01L2924/146 ,  H01L2924/1461

Abstract: Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.

公开(公告)号：US09910017B2

公开(公告)日：2018-03-06

申请号：US15177899

申请日：2016-06-09

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Susan A. Alie ,  Keith G. Fife ,  Nevada J. Sanchez ,  Tyler S. Ralston

IPC: H01L21/00 ,  H01L21/30 ,  G01N29/24 ,  B81C1/00 ,  B06B1/02 ,  A61B8/00 ,  B81B7/00

CPC classification number: G01N29/2406 ,  A61B8/4483 ,  B06B1/0292 ,  B81B7/007 ,  B81B2201/0271 ,  B81C1/00238 ,  B81C1/00301 ,  B81C2201/019 ,  B81C2203/036 ,  B81C2203/0792 ,  H01L2224/4813 ,  H01L2924/0002 ,  H01L2924/146 ,  H01L2924/1461

Abstract: Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.

公开(公告)号：US20180003678A1

公开(公告)日：2018-01-04

申请号：US15689863

申请日：2017-08-29

Applicant: Butterfly Network, Inc.

Inventor： Jonathan M. Rothberg ,  Susan A. Alie ,  Keith G. Fife ,  Nevada J. Sanchez ,  Tyler S. Ralston

IPC: G01N29/24 ,  B81C1/00 ,  A61B8/00 ,  B06B1/02 ,  B81B7/00

CPC classification number: G01N29/2406 ,  A61B8/4483 ,  B06B1/0292 ,  B81B7/007 ,  B81B2201/0271 ,  B81C1/00238 ,  B81C1/00301 ,  B81C2201/019 ,  B81C2203/036 ,  B81C2203/0792 ,  H01L2224/4813 ,  H01L2924/0002 ,  H01L2924/146 ,  H01L2924/1461

Abstract: Micromachined ultrasonic transducers integrated with complementary metal oxide semiconductor (CMOS) substrates are described, as well as methods of fabricating such devices. Fabrication may involve two separate wafer bonding steps. Wafer bonding may be used to fabricate sealed cavities in a substrate. Wafer bonding may also be used to bond the substrate to another substrate, such as a CMOS wafer. At least the second wafer bonding may be performed at a low temperature.