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公开(公告)号：US10710873B2
公开(公告)日：2020-07-14
申请号：US16290188
申请日：2019-03-01
发明人： Jonathan M. Rothberg , Keith G. Fife , Tyler S. Ralston , Gregory L. Charvat , Nevada J. Sanchez
摘要： Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.
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公开(公告)号：US10518292B2
公开(公告)日：2019-12-31
申请号：US15868989
申请日：2018-01-11
发明人： Jonathan M. Rothberg , Keith G. Fife , Tyler S. Ralston , Gregory L. Charvat , Nevada J. Sanchez
摘要： CMOS Ultrasonic Transducers and processes for making such devices are described. The processes may include forming cavities on a first wafer and bonding the first wafer to a second wafer. The second wafer may be processed to form a membrane for the cavities. Electrical access to the cavities may be provided.
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公开(公告)号：US10272470B2
公开(公告)日：2019-04-30
申请号：US15581511
申请日：2017-04-28
发明人： Jonathan M. Rothberg , Keith G. Fife , Tyler S. Ralston , Gregory L. Charvat , Nevada J. Sanchez
摘要： CMOS Ultrasonic Transducers and processes for making such devices are described. The processes may include forming cavities on a first wafer and bonding the first wafer to a second wafer. The second wafer may be processed to form a membrane for the cavities. Electrical access to the cavities may be provided.
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公开(公告)号：US10266401B2
公开(公告)日：2019-04-23
申请号：US15910776
申请日：2018-03-02
发明人： Jonathan M. Rothberg , Keith G. Fife , Tyler S. Ralston , Gregory L. Charvat , Nevada J. Sanchez
摘要： Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.
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公开(公告)号：US20180133756A1
公开(公告)日：2018-05-17
申请号：US15868989
申请日：2018-01-11
发明人： Jonathan M. Rothberg , Keith G. Fife , Tyler S. Ralston , Gregory L. Charvat , Nevada J. Sanchez
摘要： CMOS Ultrasonic Transducers and processes for making such devices are described. The processes may include forming cavities on a first wafer and bonding the first wafer to a second wafer. The second wafer may be processed to form a membrane for the cavities. Electrical access to the cavities may be provided.
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公开(公告)号：US20170299705A1
公开(公告)日：2017-10-19
申请号：US15637668
申请日：2017-06-29
IPC分类号： G01S7/52 , A61B5/01 , A61B8/08 , A61B8/13 , A61N7/02 , A61N7/00 , A61B17/32 , A61B8/00 , A61B90/00
CPC分类号： A61B5/015 , A61B8/08 , A61B8/13 , A61B8/4209 , A61B8/4245 , A61B8/4254 , A61B8/4263 , A61B8/4477 , A61B8/4488 , A61B8/4494 , A61B8/483 , A61B8/5207 , A61B8/56 , A61B8/565 , A61B2017/320069 , A61B2090/378 , A61B2562/164 , A61N7/00 , A61N7/02 , A61N2007/0078
摘要： Apparatus and methods are described that include ultrasound imaging devices, which may operate in a transmissive ultrasound imaging modality, and which may be used to detect properties of interest of a subject such as index of refraction, density and/or speed of sound. Devices suitable for performing high intensity focused ultrasound (HIFU), as well as HIFU and ultrasound imaging, are also described.
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公开(公告)号：US09738514B2
公开(公告)日：2017-08-22
申请号：US15291697
申请日：2016-10-12
发明人： Jonathan M. Rothberg , Keith G. Fife , Tyler S. Ralston , Gregory L. Charvat , Nevada J. Sanchez
CPC分类号： B81C1/00301 , B06B1/02 , B06B1/0292 , B81B7/007 , B81C1/00134 , B81C1/00158 , B81C1/00246 , B81C2201/0195 , B81C2203/0735 , B81C2203/0771 , G01N29/2406 , H01L29/84 , H04R19/005
摘要： Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.
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公开(公告)号：US09718098B2
公开(公告)日：2017-08-01
申请号：US15158968
申请日：2016-05-19
发明人： Jonathan M. Rothberg , Keith G. Fife , Tyler S. Ralston , Gregory L. Charvat , Nevada J. Sanchez
CPC分类号： B06B1/0292 , B06B1/02 , B81B3/0021 , B81B2203/0127 , B81B2203/0315 , B81B2207/015 , B81C1/00158 , B81C2201/013 , B81C2203/0118 , B81C2203/0735 , B81C2203/0771 , G10K9/12 , G10K11/18
摘要： CMOS Ultrasonic Transducers and processes for making such devices are described. The processes may include forming cavities on a first wafer and bonding the first wafer to a second wafer. The second wafer may be processed to form a membrane for the cavities. Electrical access to the cavities may be provided.
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公开(公告)号：US20170143306A1
公开(公告)日：2017-05-25
申请号：US15421854
申请日：2017-02-01
发明人： Jonathan M. Rothberg , Keith G. Fife , Nevada J. Sanchez , Tyler S. Ralston , Gregory L. Charvat , Gregory Corteville
CPC分类号： A61B8/4444 , A61B8/13 , A61B8/14 , A61B8/4411 , A61B8/4477 , A61B8/4483 , A61B8/4488 , A61B8/4494 , A61B8/483 , A61B8/5207 , A61B8/54 , A61B8/56 , A61N7/02 , A61N2007/0078 , B06B1/0292 , G01S7/003 , G01S7/5208 , G01S7/52084 , G01S15/8915 , G03B27/423 , G03B27/52 , Y10T29/49005
摘要： Ultrasound devices and methods are described, including a repeatable ultrasound transducer probe having ultrasonic transducers and corresponding circuitry. The repeatable ultrasound transducer probe may be used individually or coupled with other instances of the repeatable ultrasound transducer probe to create a desired ultrasound device. The ultrasound devices may optionally be connected to various types of external devices to provide additional processing and image rendering functionality.
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公开(公告)号：US09533873B2
公开(公告)日：2017-01-03
申请号：US14172840
申请日：2014-02-04
发明人： Jonathan M. Rothberg , Keith G. Fife , Tyler S. Ralston , Gregory L. Charvat , Nevada J. Sanchez
CPC分类号： B06B1/0292 , B06B1/02 , B81B3/0021 , B81B2203/0127 , B81B2203/0315 , B81B2207/015 , B81C1/00158 , B81C2201/013 , B81C2203/0118 , B81C2203/0735 , B81C2203/0771 , G10K9/12 , G10K11/18
摘要： CMOS Ultrasonic Transducers and processes for making such devices are described. The processes may include forming cavities on a first wafer and bonding the first wafer to a second wafer. The second wafer may be processed to form a membrane for the cavities. Electrical access to the cavities may be provided.
摘要翻译： 描述了CMOS超声波传感器及其制造方法。 所述方法可以包括在第一晶片上形成空腔并将第一晶片接合到第二晶片。 可以处理第二晶片以形成用于空腔的膜。 可以提供对腔的电接入。
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