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公开(公告)号：US20210291228A1
公开(公告)日：2021-09-23
申请号：US17192700
申请日：2021-03-04
发明人： Susan A. Alie , Keith G. Fife , Joseph Lutsky , David Grosjean
摘要： An ultrasonic transducer includes a membrane, a bottom electrode, and a plurality of cavities disposed between the membrane and the bottom electrode, each of the plurality of cavities corresponding to an individual transducer cell. Portions of the bottom electrode corresponding to each individual transducer cell are electrically isolated from one another. Each portion of the bottom electrode corresponds to each individual transducer that cell further includes a first bottom electrode portion and a second bottom electrode portion, the first and second bottom electrode portions electrically isolated from one another.
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公开(公告)号：US10967400B2
公开(公告)日：2021-04-06
申请号：US16679500
申请日：2019-11-11
发明人： Susan A. Alie , Keith G. Fife , Joseph Lutsky , David Grosjean
摘要： An ultrasonic transducer includes a membrane, a bottom electrode, and a plurality of cavities disposed between the membrane and the bottom electrode, each of the plurality of cavities corresponding to an individual transducer cell. Portions of the bottom electrode corresponding to each individual transducer cell are electrically isolated from one another. Each portion of the bottom electrode corresponds to each individual transducer that cell further includes a first bottom electrode portion and a second bottom electrode portion, the first and second bottom electrode portions electrically isolated from one another.
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3.发明授权公开(公告)号：US10850306B2
公开(公告)日：2020-12-01
申请号：US15905289
申请日：2018-02-26
摘要： Processes for fabricating capacitive micromachined ultrasonic transducers (CMUTs) are described, as are CMUTs of various doping configurations. An insulating layer separating conductive layers of a CMUT may be formed by forming the layer on a lightly doped epitaxial semiconductor layer. Dopants may be diffused from a semiconductor substrate into the epitaxial semiconductor layer, without diffusing into the insulating layer. CMUTs with different configurations of N-type and P-type doping are also described.
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公开(公告)号：US10710873B2
公开(公告)日：2020-07-14
申请号：US16290188
申请日：2019-03-01
发明人： Jonathan M. Rothberg , Keith G. Fife , Tyler S. Ralston , Gregory L. Charvat , Nevada J. Sanchez
摘要： Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.
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公开(公告)号：US20200147641A1
公开(公告)日：2020-05-14
申请号：US16680956
申请日：2019-11-12
发明人： Keith G. Fife , Lingyun Miao , Jianwei Liu , Jonathan M. Rothberg
摘要： A method of forming an ultrasonic transducer device includes bonding a membrane to seal a transducer cavity with at least a portion of a getter material layer being exposed, the getter material layer comprising a portion of a bilayer stack compatible for use in damascene processing.
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公开(公告)号：US10518292B2
公开(公告)日：2019-12-31
申请号：US15868989
申请日：2018-01-11
发明人： Jonathan M. Rothberg , Keith G. Fife , Tyler S. Ralston , Gregory L. Charvat , Nevada J. Sanchez
摘要： CMOS Ultrasonic Transducers and processes for making such devices are described. The processes may include forming cavities on a first wafer and bonding the first wafer to a second wafer. The second wafer may be processed to form a membrane for the cavities. Electrical access to the cavities may be provided.
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公开(公告)号：US10398414B2
公开(公告)日：2019-09-03
申请号：US16243546
申请日：2019-01-09
发明人： Kailiang Chen , Keith G. Fife
摘要： A time gain compensation (TGC) circuit for an ultrasound device includes a first amplifier having an integrating capacitor and a control circuit configured to generate a TGC control signal that controls an integration time of the integrating capacitor, thereby controlling a gain of the first amplifier. The integration time is an amount of time an input signal is coupled to the first amplifier before the input signal is isolated from the first amplifier.
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8.发明申请公开(公告)号：US20190164956A1
公开(公告)日：2019-05-30
申请号：US16197438
申请日：2018-11-21
IPC分类号： H01L27/06 , H01L27/092 , H01L23/528 , H01L23/522 , H01L21/768 , B81C1/00 , B06B1/02 , H01L21/56 , H01L21/3213 , H01L21/8238 , A61B8/00 , B81B3/00 , B81B7/00
摘要： Micromachined ultrasonic transducers formed in complementary metal oxide semiconductor (CMOS) wafers are described, as are methods of fabricating such devices. A metallization layer of a CMOS wafer may be removed by sacrificial release to create a cavity of an ultrasonic transducer. Remaining layers may form a membrane of the ultrasonic transducer.
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公开(公告)号：US10272470B2
公开(公告)日：2019-04-30
申请号：US15581511
申请日：2017-04-28
发明人： Jonathan M. Rothberg , Keith G. Fife , Tyler S. Ralston , Gregory L. Charvat , Nevada J. Sanchez
摘要： CMOS Ultrasonic Transducers and processes for making such devices are described. The processes may include forming cavities on a first wafer and bonding the first wafer to a second wafer. The second wafer may be processed to form a membrane for the cavities. Electrical access to the cavities may be provided.
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10.发明授权公开(公告)号：US10266401B2
公开(公告)日：2019-04-23
申请号：US15910776
申请日：2018-03-02
发明人： Jonathan M. Rothberg , Keith G. Fife , Tyler S. Ralston , Gregory L. Charvat , Nevada J. Sanchez
摘要： Complementary metal oxide semiconductor (CMOS) ultrasonic transducers (CUTs) and methods for forming CUTs are described. The CUTs may include monolithically integrated ultrasonic transducers and integrated circuits for operating in connection with the transducers. The CUTs may be used in ultrasound devices such as ultrasound imaging devices and/or high intensity focused ultrasound (HIFU) devices.
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