公开(公告)号：US20180059448A1

公开(公告)日：2018-03-01

申请号：US15647563

申请日：2017-07-12

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Long Wang ,  Yanzhao Li ,  Changcheng Ju

IPC: G02F1/139 ,  G02F1/1333 ,  H01L51/00

CPC classification number: G02F1/139 ,  G02B6/00 ,  G02F1/1333 ,  G02F1/13336 ,  G02F1/1334 ,  G02F1/133615 ,  G02F2001/13345 ,  G02F2001/13347 ,  G02F2001/13775 ,  H01L51/0034

Abstract: Embodiments of the present disclosure disclose a display panel, a method of manufacturing the display panel, and a display apparatus. The display panel includes: a first substrate and a second substrate opposite to each other; a liquid crystal layer between the first substrate and the second substrate; and a plurality of pixel electrodes on a side of the first substrate facing towards the liquid crystal layer. Liquid crystal molecules of the liquid crystal layer in a region corresponding to each of the plurality pixel electrodes are in a polymer network state, and the more a distance between the each of the plurality of pixel electrodes and a light source of an edge-lighting type light source module of the display panel is, the more an area occupied by a polymer network in the region corresponding to the each of the plurality of pixel electrodes is.

公开(公告)号：US09704891B2

公开(公告)日：2017-07-11

申请号：US14891091

申请日：2015-05-14

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Yanzhao Li ,  Long Wang ,  Yong Qiao ,  Yongchun Lu

IPC: H01L21/00 ,  H01L27/12 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/124 ,  H01L27/12 ,  H01L27/1222 ,  H01L27/1285 ,  H01L29/66742 ,  H01L29/78684 ,  H01L29/78696

Abstract: A thin film transistor and manufacturing method thereof, an array substrate and a display device are provided. In the manufacturing method of the thin film transistor, manufacturing an active layer includes: forming a germanium thin film, and forming pattern of the active layer through a patterning process; conducting a topological treatment on the germanium thin film with a functionalized element, so as to obtain the active layer (4) with topological semiconductor characteristics. The resultant thin film transistor has a higher carrier mobility and a better performance.

公开(公告)号：US09679953B2

公开(公告)日：2017-06-13

申请号：US14435895

申请日：2014-08-13

Applicant: BOE Technology Group Co., Ltd.

Inventor： Jingfei Fang ,  Chunsheng Jiang ,  Yanzhao Li

IPC: H01L27/32 ,  H01L27/12 ,  H01L51/52 ,  H01L51/56

CPC classification number: H01L27/3248 ,  H01L27/1288 ,  H01L27/322 ,  H01L27/3258 ,  H01L51/5206 ,  H01L51/56 ,  H01L2227/323

Abstract: The present invention discloses a WOLED back panel and a method of manufacturing the same. The method comprises: forming a pattern of a color filter layer on a substrate; exposing the pattern of the color filter layer by halftone exposure so as to form a groove structure in the pattern of the color filter layer; forming a pattern of a resin material layer on a surface of the substrate formed with the groove structure, and heavily doping a partial region of the resin material layer so as to form a heavily doped part having a conductivity; the heavily doped partial region of the resin material layer corresponding to a pixel electrode region, a via region, and a connection region between the pixel electrode region and the via region; and forming an organic light-emitting layer and a cathode in order on a surface of the substrate after heavily doping the partial region of the resin material layer. The production cost is reduced in the present invention by forming a groove structure in the color filter layer instead of manufacturing a conventional pixel defining layer.

公开(公告)号：US09548324B2

公开(公告)日：2017-01-17

申请号：US14430310

申请日：2014-05-12

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Yanzhao Li ,  Gang Wang ,  Dongfang Wang ,  Wei Liu ,  Jingang Fang

IPC: H01L27/12 ,  H01L29/786 ,  H01L21/027

CPC classification number: H01L27/1288 ,  H01L21/0274 ,  H01L29/786 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An array substrate and a method for fabricating the same are disclosed. The method includes steps of providing a substrate (20), a first metal layer including patterns of gate electrodes (21, 24) of a first and second TFTs, an active layer (27) and a gate insulation layer (28) are formed on the substrate; forming an etch stop layer film and a photoresist sequentially on the substrate (20), and allowing the photoresist to form a first, second and third regions through gray-scale exposing and developing; forming a pattern of an etch stop layer (29), a connection via hole (30), and a contact via hole (31) respectively in the first, second and third regions through a patterning process; and forming source electrodes and drain electrodes (22, 23,25, 26) of the first and second TFTs. Photoresist of different thicknesses are disposed according to etch depths, thereby avoiding the over-etch of relatively shallow via holes.

Abstract translation: 公开了阵列基板及其制造方法。 该方法包括提供衬底（20）的步骤，包括第一和第二TFT的栅电极（21,24）的图案的第一金属层，有源层（27）和栅绝缘层（28）形成在 基材; 在衬底（20）上依次形成蚀刻停止层膜和光致抗蚀剂，并且通过灰度曝光和显影使光致抗蚀剂形成第一，第二和第三区域; 通过图案化工艺在第一，第二和第三区域分别形成蚀刻停止层（29），连接通孔（30）和接触通孔（31）的图案; 以及形成所述第一和第二TFT的源电极和漏电极（22,23,25,26）。 根据蚀刻深度设置不同厚度的光刻胶，从而避免相对浅的通孔的过度蚀刻。

公开(公告)号：US20160359077A1

公开(公告)日：2016-12-08

申请号：US14891755

申请日：2015-05-19

Applicant: Boe Technology Group Co., Ltd.

Inventor： Yanzhao Li ,  Yong Qiao ,  Long Wang ,  Yongchun Lu

IPC: H01L31/18 ,  H01L31/068 ,  H01L31/0224 ,  H01L31/0288

CPC classification number: H01L31/1804 ,  H01L31/022425 ,  H01L31/0288 ,  H01L31/068 ,  H01L31/1808 ,  Y02E10/50

Abstract: A solar cell and a method of manufacturing the same are provided. The method comprises: forming a first electrode layer on a substrate; forming a semiconductor film of first conduction type on the first electrode layer; forming a germanium film on the semiconductor film of first conduction type, and topologizing the germanium film by using a functionalization element so as to obtain a semiconductor film of second conduction type having characteristics of topological insulator, the semiconductor film of first conduction type mating with the semiconductor film of second conduction type having characteristics of topological insulator to form a p-n junction; and forming a second electrode layer on the semiconductor film of second conduction type. The solar cell manufactured according this method has higher electric energy conversion efficiency.

Abstract translation: 提供太阳能电池及其制造方法。 该方法包括：在衬底上形成第一电极层; 在第一电极层上形成第一导电类型的半导体膜; 在第一导电类型的半导体膜上形成锗膜，并通过使用官能化元件拓扑锗膜，以获得具有拓扑绝缘体特性的第二导电类型的半导体膜，第一导电类型的半导体膜与 具有拓扑绝缘体特征的第二导电型半导体膜以形成pn结; 以及在第二导电类型的半导体膜上形成第二电极层。 根据该方法制造的太阳能电池具有较高的电能转换效率。

公开(公告)号：US20160189880A1

公开(公告)日：2016-06-30

申请号：US14785772

申请日：2015-05-29

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Long Wang ,  Yanzhao Li ,  Yong Qiao ,  Yongchun Lu

IPC: H01G11/24 ,  H01M4/04 ,  H01G11/30 ,  H01M4/66

CPC classification number: H01G11/24 ,  H01G11/26 ,  H01G11/30 ,  H01G11/86 ,  H01M4/0404 ,  H01M4/0423 ,  H01M4/0426 ,  H01M4/0428 ,  H01M4/139 ,  H01M4/661 ,  H01M4/667 ,  H01M10/052 ,  Y02E60/13

Abstract: An electrode plate, a manufacturing method thereof, and an energy storage device are disclosed. The method for manufacturing an electrode plate includes: forming a germanium film on a metal substrate; carrying out a topology treatment on the germanium film by using a functionalization element, to obtain the electrode plate with a topological semiconductor characteristic. The electrode plate prepared by the above method has a high conductivity and a low internal resistance.

Abstract translation: 公开了一种电极板及其制造方法和储能装置。 制造电极板的方法包括：在金属基板上形成锗膜; 通过使用官能化元件对锗膜进行拓扑处理，得到具有拓扑半导体特性的电极板。 通过上述方法制备的电极板具有高导电性和低内阻。

公开(公告)号：US20150194629A1

公开(公告)日：2015-07-09

申请号：US14360190

申请日：2013-12-16

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wei Liu ,  Chunsheng Jiang ,  Dongfang Wang ,  Yanzhao Li

IPC: H01L51/52 ,  H01L51/50 ,  H01L21/84 ,  H01L51/56 ,  H01L27/32

CPC classification number: H01L51/5253 ,  H01L21/84 ,  H01L27/3206 ,  H01L27/3246 ,  H01L27/3258 ,  H01L27/326 ,  H01L51/0012 ,  H01L51/5036 ,  H01L51/5056 ,  H01L51/5072 ,  H01L51/5096 ,  H01L51/5206 ,  H01L51/5221 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/301 ,  H01L2251/303

Abstract: A pixel define layer (PDL) of an organic light-emitting diode (OLED) display panel, which comprises a first PDL (21) and a second PDL (22) overlapped on the first PDL. The first PDL (21) is a hydrophobic film layer provided with openings (210) corresponding to luminous regions of sub-pixel units; and the second PDL (22) is a hydrophilic film layer provided with openings (220) corresponding to the openings (210) of the first PDL. The PDL can avoid the mutual pollution of organic light-emitting materials in luminous regions of different colors in adjacent sub-pixel units in the preparation process.

Abstract translation: 有机发光二极管（OLED）显示面板的像素限定层（PDL），其包括在第一PDL上重叠的第一PDL（21）和第二PDL（22）。 第一PDL（21）是设置有对应于子像素单元的发光区域的开口（210）的疏水膜层; 并且第二PDL（22）是设置有对应于第一PDL的开口（210）的开口（220）的亲水膜层。 PDL可以避免在准备过程中相邻子像素单元中不同颜色的发光区域中有机发光材料的相互污染。

公开(公告)号：US20140175385A1

公开(公告)日：2014-06-26

申请号：US13878905

申请日：2012-10-10

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Yanzhao Li ,  Gang Wang ,  Woobong Lee ,  Li Zhang

IPC: H01L27/32 ,  H01L51/52 ,  H01L51/56

CPC classification number: H01L27/3276 ,  H01L27/1225 ,  H01L27/3248 ,  H01L51/5206 ,  H01L51/5221 ,  H01L51/5234 ,  H01L51/5271 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/305 ,  H01L2251/5323 ,  H01L2251/5353

Abstract: Embodiments of the invention disclose an OLED device, an AMOLED display device and a method for manufacturing the AMOLED display device. the AMOLED display device comprises a TFT active layer, a pixel electrode layer and an OLED device; the OLED device comprises a cathode layer and a functional layer, and the pixel electrode layer serves as the anode layer of the OLED device; alternatively, the OLED device comprises an anode layer and a functional layer, and the pixel electrode layer serves as the cathode layer of the OLED device. Moreover, the TFT active layer and the pixel electrode layer are formed from a same IGZO film by a patterning process.

Abstract translation: 本发明的实施例公开了OLED装置，AMOLED显示装置和用于制造AMOLED显示装置的方法。 AMOLED显示装置包括TFT有源层，像素电极层和OLED器件; OLED器件包括阴极层和功能层，并且像素电极层用作OLED器件的阳极层; 或者，OLED器件包括阳极层和功能层，并且像素电极层用作OLED器件的阴极层。 此外，TFT有源层和像素电极层通过图案化工艺由相同的IGZO膜形成。