公开(公告)号：US07422929B2

公开(公告)日：2008-09-09

申请号：US11071550

申请日：2005-03-02

Applicant: Kendra J. Gallup ,  Frank S. Geefay ,  Ronald Shane Fazzio ,  Martha Johnson ,  Carrie Ann Guthrie ,  Tanya Jegeris Snyder ,  Richard C. Ruby

Inventor： Kendra J. Gallup ,  Frank S. Geefay ,  Ronald Shane Fazzio ,  Martha Johnson ,  Carrie Ann Guthrie ,  Tanya Jegeris Snyder ,  Richard C. Ruby

IPC: H01L21/44 ,  H01L21/48 ,  H01L21/50

CPC classification number: H01S5/02288 ,  G02B6/4206 ,  H01L2924/0002 ,  H01S5/02248 ,  H01S5/02292 ,  H01L2924/00

Abstract: In an embodiment, the invention provides a method for forming a wafer-level package. A bonding pad is formed on a first wafer. After forming the bonding pad, an optoelectronic device is located on the first wafer. A gasket is formed on a second wafer. After a gasket is formed on a second wafer, the second wafer is attached to the first wafer with a bond between the gasket and the bonding pad.

Abstract translation: 在一个实施例中，本发明提供了一种用于形成晶片级封装的方法。 在第一晶片上形成接合焊盘。 在形成接合焊盘之后，光电子器件位于第一晶片上。 在第二晶片上形成垫圈。 在第二晶片上形成垫圈之后，第二晶片通过垫片和焊盘之间的接合附接到第一晶片。

公开(公告)号：US07388454B2

公开(公告)日：2008-06-17

申请号：US11159753

申请日：2005-06-23

Applicant: Richard C. Ruby ,  Ronald S. Fazzio ,  Hongjun Feng ,  Paul D. Bradley

Inventor： Richard C. Ruby ,  Ronald S. Fazzio ,  Hongjun Feng ,  Paul D. Bradley

IPC: H03H9/13 ,  H03H9/15 ,  H03H9/54

CPC classification number: H03H9/02086 ,  H03H3/02 ,  H03H9/02149 ,  H03H9/13 ,  H03H9/132 ,  H03H9/173 ,  H03H2003/0428

Abstract: Disclosed is an acoustic resonator that includes a substrate, a first electrode, a layer of piezoelectric material, a second electrode, and an alternating frame region. The first electrode is adjacent the substrate, and the first electrode has an outer perimeter. The piezoelectric layer is adjacent the first electrode. The second electrode is adjacent the piezoelectric layer and the second electrode has an outer perimeter. The alternating frame region is on one of the first and second electrodes.

Abstract translation: 公开了一种包括基板，第一电极，压电材料层，第二电极和交替框架区域的声共振器。 第一电极与衬底相邻，并且第一电极具有外周边。 压电层与第一电极相邻。 第二电极邻近压电层，第二电极具有外周。 交替的框架区域在第一和第二电极之一上。

公开(公告)号：US07369013B2

公开(公告)日：2008-05-06

申请号：US11100311

申请日：2005-04-06

Applicant: Ronald S. Fazzio ,  Richard C. Ruby

Inventor： Ronald S. Fazzio ,  Richard C. Ruby

IPC: H03H9/15 ,  H03H9/54

CPC classification number: H03H9/132 ,  H03H9/02149 ,  H03H9/13 ,  H03H9/173 ,  H03H9/175 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155

Abstract: An acoustic resonator that includes a substrate, a first electrode, a layer of piezoelectric material, a second electrode, and a fill region. The first electrode is adjacent the substrate, and the first electrode has an outer perimeter. The piezoelectric layer is adjacent the first electrode. The second electrode is adjacent the piezoelectric layer and the second electrode has an outer perimeter. The fill region is in one of the first and second electrodes.

Abstract translation: 声谐振器，其包括基板，第一电极，压电材料层，第二电极和填充区域。 第一电极与衬底相邻，并且第一电极具有外周边。 压电层与第一电极相邻。 第二电极邻近压电层，第二电极具有外周。 填充区域位于第一和第二电极之一中。

公开(公告)号：US20080079516A1

公开(公告)日：2008-04-03

申请号：US11540413

申请日：2006-09-28

Applicant: Richard C. Ruby ,  Wei Pang

Inventor： Richard C. Ruby ,  Wei Pang

IPC: H03H9/58

CPC classification number: H03H3/04 ,  H03H9/105 ,  H03H9/605

Abstract: An oscillator including a high tone bulk acoustic resonator (HBAR), a film bulk acoustic resonator (FBAR) filter and a method of fabrication are described.

Abstract translation: 描述了包括高音体积声共振器（HBAR），薄膜体声波谐振器（FBAR）滤波器和制造方法的振荡器。

公开(公告)号：US20080078233A1

公开(公告)日：2008-04-03

申请号：US11526948

申请日：2006-09-25

Applicant: John D. Larson ,  Storrs T. Hoen ,  Annette C. Grot ,  Richard C. Ruby ,  Graham M. Flower

Inventor： John D. Larson ,  Storrs T. Hoen ,  Annette C. Grot ,  Richard C. Ruby ,  Graham M. Flower

IPC: G01H13/00

CPC classification number: G01N29/022 ,  G01N29/036 ,  G01N2291/0253 ,  G01N2291/0256 ,  G01N2291/02845 ,  G01N2291/0426

Abstract: A sensor senses an environmental condition. The sensor includes a film bulk acoustic resonator that includes a layer of material that causes resonant frequency and/or quality factor shifts of the film bulk acoustic resonator in response to changes in the environmental condition. The environmental condition may be relative humidity and the layer of material may be a moisture absorptive material.

Abstract translation: 传感器感测环境条件。 传感器包括膜体声波谐振器，其包括响应于环境条件的变化而引起膜体声波谐振器的谐振频率和/或质量因子偏移的材料层。 环境条件可以是相对湿度，并且材料层可以是吸湿材料。

公开(公告)号：US07312675B2

公开(公告)日：2007-12-25

申请号：US11373355

申请日：2006-03-09

Applicant: Richard C. Ruby ,  John D. Larson, III

Inventor： Richard C. Ruby ,  John D. Larson, III

IPC: H03H9/54

CPC classification number: H03H9/605 ,  H03H9/587 ,  H03H9/60 ,  Y10T29/42 ,  Y10T29/49005 ,  Y10T29/49155

Abstract: An apparatus including vertically separated acoustic resonators are disclosed. The apparatus includes a first acoustic resonator on a substrate and a second acoustic resonator vertically separated above the first acoustic resonator. Because the resonators are vertically separated above another, total area required to implement the resonators is reduced thereby savings in die size and cost are realized. The vertically separated resonators are supported by standoffs that are fabricated on the substrate, or on a resonator.

Abstract translation: 公开了一种包括垂直分离的声谐振器的装置。 该装置包括在基板上的第一声谐振器和在第一声谐振器之上垂直分离的第二声谐振器。 由于谐振器在另一个上方垂直分离，所以实现谐振器所需的总面积减小，从而实现了芯片尺寸和成本的节省。 垂直分离的谐振器由制造在衬底上或在谐振器上的支座支撑。

公开(公告)号：US07275292B2

公开(公告)日：2007-10-02

申请号：US10384199

申请日：2003-03-07

Applicant: Richard C. Ruby ,  John D. Larson ,  Paul D. Bradley

Inventor： Richard C. Ruby ,  John D. Larson ,  Paul D. Bradley

IPC: H04R17/00 ,  H01L41/00 ,  B05D5/12

CPC classification number: H03H3/04 ,  H03H3/02 ,  H03H9/02149 ,  H03H2003/0471 ,  Y10T29/42 ,  Y10T29/49002 ,  Y10T29/49005 ,  Y10T29/49155 ,  Y10T29/49156

Abstract: Method for fabricating an acoustical resonator on a substrate having a top surface. First, a depression in said top surface is generated. Next, the depression is filled with a sacrificial material. The filled depression has an upper surface level with said top surface of said substrate. Next, a first electrode is deposited on said upper surface. Then, a layer of piezoelectric material is deposited on said first electrode. A second electrode is deposited on the layer of piezoelectric material using a mass load lift-off process.

Abstract translation: 在具有顶面的基板上制造声学谐振器的方法。 首先，产生上表面的凹陷。 接下来，凹陷填充有牺牲材料。 填充的凹陷具有与所述基底的所述顶表面相对的上表面水平。 接下来，在所述上表面上沉积第一电极。 然后，在所述第一电极上沉积一层压电材料。 使用质量负载剥离工艺将第二电极沉积在压电材料层上。

公开(公告)号：US06953990B2

公开(公告)日：2005-10-11

申请号：US10666363

申请日：2003-09-19

Applicant: Kendra J. Gallup ,  Frank S. Geefay ,  Ronald Shane Fazzio ,  Martha Johnson ,  Carrie Ann Guthrie ,  Tanya Jegeris Snyder ,  Richard C. Ruby

Inventor： Kendra J. Gallup ,  Frank S. Geefay ,  Ronald Shane Fazzio ,  Martha Johnson ,  Carrie Ann Guthrie ,  Tanya Jegeris Snyder ,  Richard C. Ruby

IPC: H01L23/02 ,  B81B7/00 ,  B81C3/00 ,  G02B6/42 ,  H01L21/00 ,  H01L21/46 ,  H01L21/60 ,  H01L23/495 ,  H01L31/0203 ,  H01L31/0232 ,  H01L33/00 ,  H01S5/00 ,  H01S5/02 ,  H01S5/022 ,  H01S5/026

CPC classification number: H01S5/02288 ,  G02B6/4206 ,  H01L2924/0002 ,  H01S5/02248 ,  H01S5/02292 ,  H01L2924/00

Abstract: A wafer-level package includes a first wafer comprising a bonding pad, an optoelectronic device on the first wafer, and a second wafer comprising a gasket. The second wafer is attached to the first wafer by a bond between the gasket and the bonding pad.

Abstract translation: 晶片级封装包括第一晶片，其包括接合焊盘，第一晶片上的光电器件，以及包括垫片的第二晶片。 第二晶片通过垫圈和接合垫之间的接合附接到第一晶片。

公开(公告)号：US06946928B2

公开(公告)日：2005-09-20

申请号：US10699481

申请日：2003-10-30

Applicant: John D. Larson, III ,  Richard C. Ruby

Inventor： John D. Larson, III ,  Richard C. Ruby

IPC: H03H9/17 ,  H03H9/13 ,  H03H9/60 ,  H03H9/54 ,  H03H9/205

CPC classification number: H03H9/605 ,  H01L2224/48091 ,  H01L2224/49175 ,  H03H9/132 ,  H03H9/584 ,  H03H9/587 ,  Y10T29/42 ,  H01L2924/00014

Abstract: The acoustically-coupled transformer includes first and second stacked bulk acoustic resonators (SBARs), each having a stacked pair of film bulk acoustic resonators (FBARs) with an acoustic decoupler between them. In one embodiment, the acoustic decoupler comprises a layer of decoupling material has having a nominal thickness equal to an odd integral multiple of one quarter of the wavelength of an acoustic wave having a frequency equal to the transformer's center frequency. In another embodiment, the acoustic decoupler comprises a Bragg stack. Each FBAR has opposed planar electrodes with piezoelectric material between them. The transformer additionally has first terminals, second terminals, a first electrical circuit connecting one FBARs of the first SBAR to one FBAR of the second SBAR and the first terminals, and a second electrical circuit connecting the other FBAR of the first SBAR to the other FBAR of the second SBAR and the second terminals.

Abstract translation: 声耦合变压器包括第一和第二堆叠的体声波谐振器（SBAR），每个具有堆叠的一对薄膜体声共振器（FBAR），在它们之间具有声耦合器。 在一个实施例中，声学解耦器包括去耦材料层具有等于频率等于变压器中心频率的声波波长四分之一的奇数整数倍的标称厚度。 在另一个实施例中，声分离器包括布拉格堆叠。 每个FBAR都具有与它们之间的压电材料的平面电极。 变压器还具有第一端子，第二端子，将第一SBAR的一个FBAR与第二SBAR的一个FBAR和第一端子连接的第一电路，以及将第一SBAR的另一个FBAR连接到另一个FBAR的第二电路 的第二个SBAR和第二个终端。

公开(公告)号：US06794958B2

公开(公告)日：2004-09-21

申请号：US10202974

申请日：2002-07-25

Applicant: Joel Alan Philliber ,  Richard C. Ruby

Inventor： Joel Alan Philliber ,  Richard C. Ruby

IPC: H03H954

CPC classification number: H03H9/105 ,  H03H9/587

Abstract: A method for fabricating an apparatus, and an apparatus embodying the same is disclosed. First a device chip having circuit elements is fabricated. Next, a cap with a cap circuit is fabricated. Finally, the cap is placed on the device chip to connect a first contact point with a second contact point using the connector on the cap. The apparatus includes a device chip and a cap. The device chip has the first contact point and a second contact point. The cap has the cap circuit that, when the cap is placed on the device chip, connects the first contact point with the second contact point.

Abstract translation: 公开了一种制造装置的方法及其体现方法。 首先，制造具有电路元件的器件芯片。 接下来，制造具有盖电路的盖。 最后，使用盖上的连接器将盖放置在设备芯片上以将第一接触点与第二接触点连接。 该装置包括装置芯片和盖。 器件芯片具有第一接触点和第二接触点。 盖具有帽盖电路，当帽被放置在器件芯片上时，将第一接触点与第二接触点连接。