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110 条记录 (耗时 0.018 秒)

    Growth of antimony doped P-type zinc oxide nanowires for optoelectronics
    51.
    发明授权
    Growth of antimony doped P-type zinc oxide nanowires for optoelectronics 有权
    锑掺杂的P型氧化锌纳米线的生长用于光电子学

    公开(公告)号：US09455399B2

    公开(公告)日：2016-09-27

    申请号：US14024798

    申请日：2013-09-12

    申请人： Georgia Tech Research Corporation

    发明人： Zhong Lin Wang ,  Ken Pradel

    IPC分类号： H01L41/18 ,  H01L41/39 ,  H01L41/08 ,  H01L41/31 ,  H01L41/187 ,  H01L41/113

    CPC分类号： H01L41/183 ,  H01L41/082 ,  H01L41/113 ,  H01L41/18 ,  H01L41/187 ,  H01L41/31 ,  H01L41/39 ,  Y10T428/23993

    摘要： In a method of growing p-type nanowires, a nanowire growth solution of zinc nitrate (Zn(NO3)2), hexamethylenetetramine (HMTA) and polyethylenemine (800 Mw PEI) is prepared. A dopant solution to the growth solution, the dopant solution including an equal molar ration of sodium hydroxide (NaOH), glycolic acid (C2H4O3) and antimony acetate (Sb(CH3COO)3) in water is prepared. The dopant solution and the growth solution combine to generate a resulting solution that includes antimony to zinc in a ratio of between 0.2% molar to 2.0% molar, the resulting solution having a top surface. An ammonia solution is added to the resulting solution. A ZnO seed layer is applied to a substrate and the substrate is placed into the top surface of the resulting solution with the ZnO seed layer facing downwardly for a predetermined time until Sb-doped ZnO nanowires having a length of at least 5 μm have grown from the ZnO seed layer.

    摘要翻译： 在生长p型纳米线的方法中，制备了硝酸锌（Zn（NO 3）2），六亚甲基四胺（HMTA）和聚乙烯亚胺（800MW PEI）的纳米线生长溶液。 制备在生长溶液中的掺杂剂溶液，该掺杂剂溶液在水中包含相等摩尔比的氢氧化钠（NaOH），乙醇酸（C 2 H 4 O 3）和乙酸锑（Sb（CH 3 COO）3）。 掺杂剂溶液和生长溶液组合以产生包含0.25％至2.0％摩尔比的锑与锌的所得溶液，所得溶液具有顶部表面。 向所得溶液中加入氨溶液。 将ZnO种子层施加到衬底上，并将衬底放置在所得溶液的顶表面中，使ZnO种子层朝下一段预定时间，直到长度至少为5μm的Sb掺杂的ZnO纳米线已经从 ZnO种子层。

    Method of manufacturing a piezoelectric micro energy harvester
    53.
    发明授权
    Method of manufacturing a piezoelectric micro energy harvester 有权
    制造压电微能量收割机的方法

    公开(公告)号：US09293689B2

    公开(公告)日：2016-03-22

    申请号：US14066085

    申请日：2013-10-29

    申请人： Electronics and Telecommunications Research Institute

    发明人： Chi Hoon Jun ,  Sang Choon Ko ,  Jong Tae Moon

    IPC分类号： H04R17/00 ,  H01L41/29 ,  H01L41/31 ,  H02N2/18 ,  H01L41/316 ,  H01L41/317 ,  H01L41/318 ,  H01L41/113

    CPC分类号： H01L41/29 ,  H01L41/1136 ,  H01L41/31 ,  H01L41/316 ,  H01L41/317 ,  H01L41/318 ,  H02N2/188 ,  Y10T29/42

    摘要： A piezoelectric micro energy harvester and manufacturing method thereof, the method including: forming an insulation film on a substrate; patterning the insulation film and forming an electrode pad pattern, a center electrode pattern, and a side electrode pattern; forming an open cavity at an inside of the substrate for suspension of the center electrode pattern and the side electrode pattern; disposing a conductive film on the electrode pad pattern, the center electrode pattern, and the side electrode pattern and forming electrode pads, a center electrode, and a side electrode; and forming a piezoelectric film so as to cover a space between the center electrode and the side electrode and upper surfaces of the center electrode and the side electrode.

    摘要翻译： 一种压电微能量收集器及其制造方法，所述方法包括：在基板上形成绝缘膜; 图案化绝缘膜并形成电极焊盘图案，中心电极图案和侧面电极图案; 在所述基板的内部形成开放空腔，以悬浮所述中心电极图案和所述侧面电极图案; 在电极焊盘图形，中心电极图案和侧面电极图案上设置导电膜，形成电极焊盘，中心电极和侧面电极; 以及形成压电膜以覆盖中心电极和侧电极之间的空间以及中心电极和侧电极的上表面。

    Variable optical attenuator
    54.
    发明授权
    Variable optical attenuator 有权

    公开(公告)号：US09256037B2

    公开(公告)日：2016-02-09

    申请号：US14579726

    申请日：2014-12-22

    申请人： Cisco Technology, Inc.

    发明人： Brice D. Achkir

    IPC分类号： G02B6/00 ,  G02B6/42 ,  G02B6/26 ,  H01L41/31

    CPC分类号： G02B6/42 ,  G02B6/266 ,  H01L41/31 ,  Y10T29/42 ,  Y10T29/49817 ,  Y10T156/1062

    摘要： In one embodiment, a variable optical attenuator includes a core configured to propagate optical data signals and a cladding surrounding at least part of the core and comprising a first cladding portion and a second cladding portion. An attenuating spacer between the first cladding portion and the second cladding portion is formed from a smart material. The smart material is configured to apply a force to at least one of the first cladding portion and the second cladding portion in response to an external stimulus. The smart material may be a piezoelectric material and the external stimulus may be an electrical current.

    PIEZOELECTRIC ACTUATOR ARRAY
    57.
    发明申请
    PIEZOELECTRIC ACTUATOR ARRAY 有权
    压电致动器阵列

    公开(公告)号：US20150137664A1

    公开(公告)日：2015-05-21

    申请号：US14531475

    申请日：2014-11-03

    申请人： Océ-Technologies B.V.

    发明人： Johannes L.M. CARIS ,  Johannes T.M. HERMANS ,  Robert N.J. JACOBS ,  Peter J.M. JANSSEN

    IPC分类号： H01L41/09 ,  H01L41/23 ,  H01L41/31 ,  H01L41/047 ,  B41J2/14

    CPC分类号： H01L41/09 ,  B41J2/14209 ,  B41J2/14233 ,  B41J2/14274 ,  B41J2/1609 ,  B41J2/1623 ,  B41J2/1632 ,  B41J2002/14217 ,  B41J2002/14491 ,  H01L41/047 ,  H01L41/0475 ,  H01L41/083 ,  H01L41/23 ,  H01L41/31 ,  H01L41/313 ,  Y10T29/42

    摘要： A piezoelectric actuator array comprising a substrate plate (10) with a number of signal leads (14) and at least one common lead (18) formed on at least one surface (12) thereof, and a number of piezoelectric bodies (30, 32) arranged in a row (34) on one surface (12) of the substrate plate and formed by dividing a common piezoelectric block, said piezoelectric bodies comprising a number of active bodies (30) each of which has, on a first side of said row (34), a signal electrode (38) in contact with one of said signal leads (14) and, on an opposite second side of the row, a common electrode (40) in contact with said common lead (18), said substrate plate (10) having at least one connector lead (16) disposed on the first side of the row (34) and electrically connected to the common lead (18) on the second side of the row, wherein said piezoelectric bodies comprise at least one piezoelectric body (32) with a conductive outer surface layer (42) that establishes an electrically conductive path from the connector lead (16) to the common lead (18).

    摘要翻译： 一种压电致动器阵列，包括具有多个信号引线（14）的衬底板（10）和形成在其至少一个表面（12）上的至少一个公共引线（18），以及多个压电体（30,32） ），其被布置在所述基板的一个表面（12）上并通过划分公共压电块而形成，所述压电体包括多个活性体（30），所述多个活性体（30）在所述第一侧上具有 行（34），与所述信号引线（14）中的一个接触的信号电极（38），并且在所述行的相对的第二侧上具有与所述公共引线（18）接触的公共电极（40），所述公共电极 衬底板（10），其具有设置在所述排（34）的第一侧上的至少一个连接器引线（16）并且电连接到所述行的第二侧上的公共引线（18），其中所述压电体至少包括 一个具有导电外表面层（42）的压电体（32），其形成导电的 从连接器引线（16）到公共引线（18）的路径。

    Method of fabricating oxide thin film device using laser lift-off and oxide thin film device fabricated by the same
    59.
    发明授权
    Method of fabricating oxide thin film device using laser lift-off and oxide thin film device fabricated by the same 有权
    使用其制造的使用激光剥离和氧化物薄膜器件的氧化物薄膜器件的制造方法

    公开(公告)号：US08828845B2

    公开(公告)日：2014-09-09

    申请号：US13713396

    申请日：2012-12-13

    申请人： Korea Institute of Science and Technology

    发明人： Chong Yun Kang ,  Seok Jin Yoon ,  Young Ho Do ,  Ji Won Choi ,  Seung Hyub Baek ,  Hyun Cheol Song ,  Jin Sang Kim

    IPC分类号： H01L21/30 ,  H01L21/02 ,  H01L29/22 ,  H01L41/31

    CPC分类号： H01L21/02565 ,  H01L29/22 ,  H01L41/113 ,  H01L41/31 ,  H01L41/313

    摘要： Provided is a method of fabricating an oxide thin film device using laser lift-off and an oxide thin film device fabricated by the same. The method includes: forming an oxide thin film on a growth substrate; bonding a temporary substrate on the oxide thin film; irradiating laser onto the growth substrate to separate the oxide thin film on which the temporary substrate has been bonded from the growth substrate; bonding a device substrate on the oxide thin film on which the temporary substrate has been bonded; and forming an upper electrode film on the oxide thin film. Therefore, it is possible to overcome problems caused by a defective layer by transferring an oxide thin film transferred on a polymer-based temporary substrate onto a device substrate, without using an interface on which a defective layer formed due to oxygen diffusion upon laser lift-off is formed.

    摘要翻译： 提供一种使用激光剥离制造氧化物薄膜器件的方法和由其制造的氧化物薄膜器件。 该方法包括：在生长衬底上形成氧化物薄膜; 将临时衬底粘结在氧化物薄膜上; 将激光照射到所述生长衬底上以从所述生长衬底分离其上已经结合有所述临时衬底的氧化物薄膜; 将器件衬底接合在已经结合有临时衬底的氧化物薄膜上; 以及在所述氧化物薄膜上形成上电极膜。 因此，可以通过将在基于聚合物的临时衬底上转印的氧化物薄膜转印到器件衬底上来克服由缺陷层引起的问题，而不使用在激光提升时由于氧扩散而形成的缺陷层的界面， 关闭形成。

    Add-on unit or cable connectable to the power supply or signal cord of an electric device
    60.
    发明授权
    Add-on unit or cable connectable to the power supply or signal cord of an electric device 有权

    公开(公告)号：US11462674B2

    公开(公告)日：2022-10-04

    申请号：US16621268

    申请日：2018-06-12

    申请人： Spindeco Technologies Oy

    发明人： Pekka Tapani Saastamoinen ,  Petteri Koljonen ,  Reijo Lappalainen

    IPC分类号： H01L41/107 ,  H01L41/31 ,  H01L41/053 ,  H01L41/18 ,  H01B1/02 ,  H01B1/04 ,  H01B3/00

    摘要： The present invention discloses a method for creating spin-affected electric currents passively and feeding them into electric devices. The invention can be realized as either a rectangular black box incorporating coatings on top of and on the bottom of a conducting volume of material, or by coating a round-shaped wire or thread(s) of a cable. This is obtained by using a specific coating material on the conducting piece of material. The material may be piezoelectric, such as silicon dioxide (i.e. quartz) but also silicon carbide (SiC) may be used. Also, mixtures and composite arrangements are possible in order to create a coating. The manufactured add-on unit, when supplied with the input power or input signal, will act as an electron spin feeding device to the electric device because the electrons will be moving strongly within the interface area of the coating and the conducting material with aligned spins. The resulting effect also lasts longer within the electric device than just the time when the add-on unit is connected to the electric device.