公开(公告)号：US5021118A

公开(公告)日：1991-06-04

申请号：US933924

申请日：1986-11-24

Applicant: Akihisa Kawasaki

Inventor： Akihisa Kawasaki

IPC: C30B15/12 ,  C30B27/02 ,  H01L21/18 ,  H01L21/208

CPC classification number: C30B27/02 ,  C30B15/12 ,  Y10T117/1052

Abstract: A method and apparatus for drawing up a single crystal using a double-crucible apparatus and a liquid capsule process. The inner crucible of the double-crucible apparatus is attached to the outer crucible. The presence of through holes in the lower portions of the inner crucible allow communication between the molten raw material in the inner and outer crucibles. Through holes in the upper portion of the inner crucible allow communication between the liquid sealing agent covering the molten raw material in the inner and outer crucibles. Single crystals having uniform impurity concentration and few defects are rapidly grown because the interface between the liquid sealing agent and molten raw material in the inner crucible is even with the same interface in the outer crucible.

Abstract translation: 一种使用双坩埚装置和液体胶囊工艺制备单晶的方法和装置。 双坩埚装置的内坩埚附接到外坩埚。 在内坩埚的下部的通孔的存在允许内坩埚和外坩埚中的熔融原料之间的连通。 内坩埚上部的通孔允许覆盖内外坩埚中的熔融原料的液体密封剂之间的连通。 由于液体密封剂和内坩埚中的熔融原料之间的界面在外坩埚中具有相同的界面，所以具有均匀杂质浓度和少量缺陷的单晶是快速生长的。

公开(公告)号：US5009862A

公开(公告)日：1991-04-23

申请号：US527887

申请日：1990-05-23

Applicant: Michio Kida ,  Yoshiaki Arai ,  Kensho Sahira

Inventor： Michio Kida ,  Yoshiaki Arai ,  Kensho Sahira

IPC: C30B15/12

CPC classification number: C30B15/12 ,  Y10S117/90 ,  Y10T117/1052 ,  Y10T117/1056 ,  Y10T117/1068

Abstract: An apparatus for melting a semiconductor material and growing a semiconductor crystal from the melted material includes a susceptor having a peripheral rim, a quartz crucible assembly for receiving the semiconductor material therein. The crucible assembly includes an outer crucible housed in and supported by the susceptor and an inner crucible adapted to be so placed within the outer crucible as to define a multi-wall structure. The apparatus also includes at least one fluid passage for permitting the melted material to flow between the inner and outer crucibles when the multi-wall structure is defined by the inner and outer crucibles, a holder for holding the inner crucible, a heater disposed so as to surround the susceptor for heating the material in the crucible assembly, and a drive mechanism operable to move at least one of the holder and the susceptor vertically between a coupled position where the holder is supported by the susceptor in such a manner that the inner crucible is so placed within the outer crucible as to define the multi-wall structure and a released position where the holder is disengaged from the susceptor in such a manner that the inner crucible is released from the outer crucible.There is also provided a process which may be conveniently carried out in the apparatus described above.

公开(公告)号：US4957712A

公开(公告)日：1990-09-18

申请号：US457322

申请日：1989-12-27

Applicant: Yoshinobu Shima ,  Masanori Ohmura ,  Akira Ohtani ,  Kenji Araki

Inventor： Yoshinobu Shima ,  Masanori Ohmura ,  Akira Ohtani ,  Kenji Araki

IPC: C30B15/00 ,  C30B15/12 ,  C30B29/06 ,  H01L21/208

CPC classification number: C30B15/12 ,  Y10S117/90 ,  Y10T117/1052

Abstract: An apparatus for manufacturing a single silicon crystal comprises a quartz crucible accomodated into a graphite crucible, a partition member partitioning molten silicon material in the quartz crucible into a single silicon growing portion on the inner side and a material melting portion on the outer side, a heater for maintaining the molten silicon material in the single silicon growing portion at a temperature appropriate for growing the single silicon crystal and for supplying heat for melting the raw materials fed into the material melting portion, and small holes made in the partition member. The partition member is made of an opaque quartz glass. The material melting portion is replenished with the raw materials and single silicon crystal is pulled from the single silicon growing portion. Molton silicon material moves from the material melting portion into the single silicon growing portion through small holes made in the partition member.

公开(公告)号：US4750969A

公开(公告)日：1988-06-14

申请号：US878548

申请日：1986-06-25

Applicant: Koichi Sassa ,  Kenji Tomizawa

Inventor： Koichi Sassa ,  Kenji Tomizawa

IPC: C30B15/00 ,  C30B15/12 ,  C30B27/02 ,  C30B29/40 ,  H01L21/18 ,  H01L21/208 ,  C30B15/02

CPC classification number: C30B15/00 ,  C30B15/12 ,  C30B27/02 ,  C30B29/40 ,  C30B29/42

Abstract: A method for growing single crystals of a dissociative compound semiconductor which are pulled in an atmosphere of a gas of a volatile component of the dissociative compound filled in an inner chamber sealed within a growth apparatus is provided wherein the space of the inner chamber is divided into different parts by means of partition wall, which is disposed in the inner chamber and the lower part of which is immersed in a melt contained in a crucible, thereby high quality single crystals with a correct stoichiometric composition can be grown under the constant conditions of temperature and pressure without detrimental effects due to thermal convection in the crystal growth region and the melt. The partition wall may be made either of a monolithic structure or a composite structure capable of being divided into two parts, an upper member and a lower member like a float, the upper part of the lower member is vertically movably inserted into upper member.

Abstract translation: 提供一种生长在分离化合物半导体中的单晶的方法，其在密封在生长装置中的填充在内腔中的解离化合物的挥发性成分的气体气氛中拉动，其中内室的空间被分成 不同部分通过分隔壁设置在内室中，其下部浸没在坩埚中的熔体中，从而可以在恒定的温度条件下生长具有正确化学计量组成的高质量单晶 并且由于晶体生长区和熔体中的热对流而没有不利影响的压力。 分隔壁可以由能够分成两部分的单块结构或复合结构制成，上部构件和下部构件如浮子一样，下部构件的上部可上下移动地插入上部构件。

公开(公告)号：US4687646A

公开(公告)日：1987-08-18

申请号：US606019

申请日：1984-05-02

Applicant: Werner D. Mateika ,  Rolf Laurien ,  Manfred R. Liehr

Inventor： Werner D. Mateika ,  Rolf Laurien ,  Manfred R. Liehr

IPC: C30B15/12 ,  C30B11/00 ,  F27B14/06 ,  H05B6/24 ,  B01D9/00

CPC classification number: C30B11/003 ,  H05B6/24

Abstract: A cold crucible for melting and crystallizing non-metallic inorganic compounds having a cooled crucible wall in the form of metal pipes through which cooling medium flows which are in mechanical connection with the bottom of the crucible through which cooling medium also flows, and having an induction coil which surrounds the wall of the crucible and via which high frequency energy can be coupled in the contents of the crucible and having a second induction coil which can be controlled independently of the induction coil surrounding the wall of the crucible and which is provided below the bottom of the crucible, and having a crucible bottom consisting of a dielectric material.

Abstract translation: 一种用于熔化和结晶非金属无机化合物的冷坩埚，其具有金属管形式的冷却坩埚壁，冷却介质流经冷却坩埚壁，其与冷却介质也流过的坩埚底部机械连接，并具有感应 线圈，其围绕坩埚的壁并且可以在坩埚的内容物中耦合高频能量并具有第二感应线圈，该第二感应线圈可以独立于围绕坩埚壁的感应线圈被控制，并且设置在坩埚的下方 并且具有由电介质材料构成的坩埚底部。

公开(公告)号：US4447289A

公开(公告)日：1984-05-08

申请号：US397581

申请日：1982-07-12

Applicant: Joachim Geissler ,  Dieter Helmreich

Inventor： Joachim Geissler ,  Dieter Helmreich

IPC: C30B15/00 ,  C30B15/06 ,  C30B15/36 ,  C30B29/64 ,  C30B33/00 ,  H01L21/02 ,  H01L21/208 ,  H01L31/18 ,  C30B11/02 ,  C30B15/12

CPC classification number: H01L31/1804 ,  C30B15/06 ,  C30B15/36 ,  C30B33/00 ,  H01L31/182 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521 ,  Y10S117/914 ,  Y10S117/915

Abstract: The invention provides a process for the manufacture of coarsely crystalline to monocrystalline sheets and/or plates of semiconductor material of preferred orientation. A meniscus of molten semiconductor material comes in contact with a moving, cooler substrate of the same coarsely crystalline to monocrystalline semiconductor material, during which, while transferring the preferred orientation, a thin sheet of the semiconductor material is pulled onto the substrate and, after cooling, becomes detached from the substrate. The substrate can be reused as often as desired.

Abstract translation: 本发明提供了一种用于制造优选取向的半晶体到单晶片和/或半导体材料的板的方法。 熔融半导体材料的弯液面与相同的粗晶体到单晶半导体材料的移动的较冷的衬底接触，在此期间，在转移优选的取向的同时，半导体材料的薄片被拉到衬底上，并且在冷却之后 ，从基板脱离。 可以根据需要经常重复使用基板。

公开(公告)号：US4282184A

公开(公告)日：1981-08-04

申请号：US83169

申请日：1979-10-09

Applicant: George Fiegl ,  Walter Torbet

Inventor： George Fiegl ,  Walter Torbet

IPC: C30B15/02 ,  C30B15/14 ,  C30B15/12

CPC classification number: C30B15/14 ,  C30B15/02 ,  Y10T117/1008 ,  Y10T117/1052 ,  Y10T117/1056

Abstract: A replenishment crucible is mounted adjacent the usual drawing crucible, from which a monocrystalline boule is drawn according to the Czochralski method. A siphon tube for molten semiconductor transfer extends from the replenishment crucible to the drawing crucible. Each crucible is enclosed within its own hermetic shell and is provided with its own heater. The siphon tube is initially filled with molten semiconductor by raising the inert atmospheric pressure in the shell surrounding the replenishment crucible above that surrounding the drawing crucible. Thereafter, adjustment of the level of molten semiconductor in the drawing crucible may be achieved by adjusting the level in either crucible, since the siphon tube will establish the same level in both crucibles. For continuous processing, solid semiconductor may be added to and melted in the replenishment crucible during the process of drawing crystals from the drawing crucible. A constant liquid level of melted semiconductor is maintained in the system by an optical monitoring device and any of several electromechanical controls of the rate of replenishment or crucible height.

Abstract translation: 补充坩埚安装在通常的绘图坩埚附近，根据Czochralski法从中取出单晶棒。 用于熔融半导体传输的虹吸管从补充坩埚延伸到绘图坩埚。 每个坩埚都封闭在自己的密封外壳中，并设有自己的加热器。 虹吸管最初通过在围绕着绘图坩埚的补充坩埚周围的壳体中提高惰性大气压力来填充熔融半导体。 此后，由于虹吸管将在两个坩埚中建立相同的水平，所以可以通过调节坩埚中的液位来实现拉制坩埚中的熔融半导体的水平的调节。 对于连续加工，在从拉制坩埚中取出晶体的过程中，固体半导体可以加入并熔化在补充坩埚中。 通过光学监视装置和补充速率或坩埚高度的几个机电控制中的任何一个，在系统中维持熔融半导体的恒定液位。

公开(公告)号：US3567397A

公开(公告)日：1971-03-02

申请号：US3567397D

申请日：1967-10-11

Applicant: WESTINGHOUSE ELECTRIC CORP

Inventor： O'HARA SYDNEY

IPC: C30B15/12 ,  C30B29/64 ,  B01J17/00

CPC classification number: C30B15/12 ,  Y10S117/90 ,  Y10T117/1004 ,  Y10T117/1052

Abstract: THIS INVENTION PROVIDES APPARATUS FOR GROWING WEBBED DENDRITIC SEMICONDUCTOR MATERIAL FROM A MELT SUBSTANTIALLY FREE OF ANY DROSS ON THE SURFACE OF THE MELT. THE APPARATUS COMPRISES A TWO COMPONENT CRUCIBLE, CONSISTING OF AN INNER SHELL AND AN OUTER SHELL. THE MELT IS FORMED IN THE OUTER SHELL. THE INNER SHELL, AXIALLY ALIGNED WITH THE OUTER SHELL, HAS A VERTICAL DISPLACEMENT MEANS ATTACHED TO IT. THE INNER SHELL IS LOWERED INTO THE MELT OF THE OUTER SHELL AND DROSS FREE MELT IS FORCED THROUGH AN APERTURE IN THE APEX OF A CAVITY OF THE INNER SHELL FORMING A POOL OF DROSS FREE MELT THEREIN. FROM THIS DROSS FREE MELT THE WEBBED DENDRITIC SEMICONDUCTOR MATERIAL IS GROWN.

公开(公告)号：US3025191A

公开(公告)日：1962-03-13

申请号：US789760

申请日：1960-02-10

Applicant: RAYTHEON CO

Inventor： LEVERTON WALTER F

IPC: C30B15/12

CPC classification number: C30B15/12 ,  Y10T117/1052 ,  Y10T117/1056

公开(公告)号：US20230265583A1

公开(公告)日：2023-08-24

申请号：US18018165

申请日：2021-07-02

Applicant: SHIN-ETSU QUARTZ PRODUCTS CO., LTD.

Inventor： Kazuki TOMOKUNI ,  Yoshinori IKEDA

IPC: C30B35/00 ,  C30B29/06 ,  C30B15/12

CPC classification number: C30B35/002 ,  C30B29/06 ,  C30B15/12

Abstract: A CZ crucible for growing a single crystal silicon ingot by a CZ method, where the CZ crucible includes a closed-end cylindrical graphite crucible and a closed-end cylindrical quartz glass crucible disposed inside the graphite crucible, and the CZ crucible includes a gap between an inner surface of a bottom portion of the graphite crucible and an outer surface of a bottom portion of the quartz glass crucible on a central axis of the CZ crucible, the gap keeping the inner surface of the bottom portion of the graphite crucible and the outer surface of the bottom portion of the quartz glass crucible contactless with each other. This provides a CZ crucible that ensures that a closed-end cylindrical quartz glass crucible for growing a single crystal silicon ingot by a CZ method can be stable and self-supporting when disposed inside a closed-end cylindrical graphite crucible.