公开(公告)号：US09263637B2

公开(公告)日：2016-02-16

申请号：US13145995

申请日：2009-01-30

Applicant: Michael R. T. Tan ,  David A. Fattal ,  Marco Fiorentino ,  Shih-Yuan Wang

Inventor： Michael R. T. Tan ,  David A. Fattal ,  Marco Fiorentino ,  Shih-Yuan Wang

IPC: H01L33/00 ,  H01L33/20 ,  H01L33/02 ,  H01L33/04 ,  H01L33/38

CPC classification number: H01L33/06 ,  H01L33/0062 ,  H01L33/02 ,  H01L33/04 ,  H01L33/20 ,  H01L33/30 ,  H01L33/387 ,  H01L33/40 ,  H01L2933/0016

Abstract: A light emitting diode (100 or 150) includes a diode structure containing a quantum well (120), an enhancement layer (142), and a barrier layer (144 or 148) between the enhancement layer (142) and the quantum well (120). The enhancement layer (142) supports plasmon oscillations at a frequency that couples to photons produced by combination of electrons and holes in the quantum well (120). The barrier layer serves to block diffusion between the enhancement layer (142) and the diode structure.

Abstract translation: 发光二极管（100或150）包括在增强层（142）和量子阱（120）之间包含量子阱（120），增强层（142）和阻挡层（144或148）的二极管结构 ）。 增强层（142）以耦合到量子阱（120）中的电子和空穴的组合产生的光子的频率来支持等离子体振荡。 阻挡层用于阻止增强层（142）和二极管结构之间的扩散。

公开(公告)号：US09206524B2

公开(公告)日：2015-12-08

申请号：US13559199

申请日：2012-07-26

Applicant: Yu Zhang ,  Qian Sun ,  Jung Han

Inventor： Yu Zhang ,  Qian Sun ,  Jung Han

IPC: C25F3/12 ,  C25B1/00 ,  H01L21/306 ,  H01L21/3063 ,  H01L21/02 ,  H01L33/00 ,  H01L33/32 ,  C30B29/40

CPC classification number: C25F3/12 ,  C25B1/003 ,  C25B1/04 ,  C30B23/025 ,  C30B25/186 ,  C30B29/406 ,  C30B33/10 ,  G02B1/02 ,  G02B1/118 ,  G02B5/1861 ,  G02B6/29356 ,  G02B6/29358 ,  G02B2207/107 ,  H01L21/02002 ,  H01L21/02005 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02658 ,  H01L21/306 ,  H01L21/30612 ,  H01L21/30625 ,  H01L21/30635 ,  H01L21/326 ,  H01L21/7813 ,  H01L33/0025 ,  H01L33/0062 ,  H01L33/007 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/16 ,  H01L33/32 ,  Y02E60/366 ,  Y10T428/24997

Abstract: This invention relates to methods of generating NP gallium nitride (GaN) across large areas (>1 cm2) with controlled pore diameters, pore density, and porosity. Also disclosed are methods of generating novel optoelectronic devices based on porous GaN. Additionally a layer transfer scheme to separate and create free-standing crystalline GaN thin layers is disclosed that enables a new device manufacturing paradigm involving substrate recycling. Other disclosed embodiments of this invention relate to fabrication of GaN based nanocrystals and the use of NP GaN electrodes for electrolysis, water splitting, or photosynthetic process applications.

Abstract translation: 本发明涉及跨越具有受控孔径，孔密度和孔隙率的大面积（> 1cm 2）生成NP氮化镓（GaN）的方法。 还公开了产生基于多孔GaN的新型光电子器件的方法。 此外，公开了分离和产生独立的结晶GaN薄层的层转移方案，其能够实现涉及衬底回收的新器件制造范例。 本发明的其它公开的实施例涉及GaN基纳米晶体的制造和用于电解，水分解或光合过程应用的NP GaN电极的使用。

公开(公告)号：US20150340437A1

公开(公告)日：2015-11-26

申请号：US14326399

申请日：2014-07-08

Applicant: Yu-Chen Chang

Inventor： Yu-Chen Chang

IPC: H01L29/06 ,  H01L29/20 ,  H01L33/12 ,  H01L33/30 ,  H01L33/04 ,  H01L33/00

CPC classification number: H01L29/127 ,  B82Y20/00 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02513 ,  H01L21/02546 ,  H01L21/0259 ,  H01L21/02631 ,  H01L29/0665 ,  H01L29/155 ,  H01L29/157 ,  H01L29/20 ,  H01L29/2003 ,  H01L29/207 ,  H01L31/035218 ,  H01L33/0062 ,  H01L33/04 ,  H01L33/06 ,  H01L33/12 ,  H01L33/30 ,  H01L33/305 ,  H01L33/32 ,  H01L33/325 ,  Y02E10/544

Abstract: A semiconductor device comprises a substrate and quantum dots, wherein a peak emission of the quantum dots has a FWHM of less than 20 meV when the semiconductor is measured at a temperature of 4 Kelvin.

Abstract translation: 半导体器件包括衬底和量子点，其中当以4开尔文的温度测量半导体时，量子点的峰值发射具有小于20meV的FWHM。

公开(公告)号：US09184356B2

公开(公告)日：2015-11-10

申请号：US14710544

申请日：2015-05-12

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Cuicui Sheng ,  Shuying Qiu ,  Chaoyu Wu ,  Ching-Shan Tao ,  Wenbi Cai

IPC: H01L33/60 ,  H01L33/10 ,  H01L33/20 ,  H01L33/00 ,  H01L25/075

CPC classification number: H01L33/46 ,  H01L25/0753 ,  H01L33/0062 ,  H01L33/0079 ,  H01L33/10 ,  H01L33/20 ,  H01L33/60 ,  H01L2924/0002 ,  H01L2933/0025 ,  H01L2933/0058 ,  H01L2924/00

Abstract: A light emitting diode includes: a substrate of front and back main surfaces; a V-shaped groove, which has a reflecting surface, formed over front surface of the conductive substrate; a light-emitting epitaxial layer, the margin of which has its vertical projection between the bottom and the inner margin of the V-shaped groove, formed over the substrate, so that light emitted from the light-emitting epitaxial layer margin is incident to the mirror surface of the V-shaped groove and emits outwards. This structure can effectively improve extraction efficiency of device and control path of light at peripheral region of the light-emitting epitaxial layer.

Abstract translation: 发光二极管包括：前后主面的基板; 形成在导电性基板的前表面上的具有反射面的V形槽; 发光外延层，其边缘在V形槽的底部和内边缘之间具有垂直的突起，形成在衬底上，使得从发光外延层边缘发射的光入射到 V形槽的镜面并向外发射。 该结构可以有效地提高发光外延层的外围区域的器件的提取效率和光的控制路径。

公开(公告)号：US20150287878A1

公开(公告)日：2015-10-08

申请号：US14746103

申请日：2015-06-22

Applicant: FUJIFILM Corporation

Inventor： Masashi ONO ,  Makoto KIKUCHI ,  Atsushi TANAKA ,  Masayuki SUZUKI ,  Yoshihiko KANEMITSU

IPC: H01L33/06 ,  H01L31/0352 ,  H01L31/0304 ,  H01L31/032 ,  H01L29/24 ,  H01L33/30 ,  H01L29/786 ,  H01L29/66 ,  H01L29/06 ,  H01L29/201 ,  H01L31/18 ,  H01L33/00

CPC classification number: H01L33/06 ,  H01L29/0665 ,  H01L29/201 ,  H01L29/245 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78681 ,  H01L31/0304 ,  H01L31/0324 ,  H01L31/035218 ,  H01L31/18 ,  H01L31/184 ,  H01L33/0062 ,  H01L33/0091 ,  H01L33/30 ,  H01L33/44 ,  H01L51/502

Abstract: A semiconductor film, including: an assembly of semiconductor quantum dots containing a metal atom; a thiocyanate ion coordinated to the semiconductor quantum dots; and a metal ion.

Abstract translation: 一种半导体膜，包括：包含金属原子的半导体量子点的组件; 与半导体量子点配位的硫氰酸根离子; 和金属离子。

公开(公告)号：US20150236178A1

公开(公告)日：2015-08-20

申请号：US14699817

申请日：2015-04-29

Applicant: FUJIFILM Corporation

Inventor： Masashi ONO ,  Makoto KIKUCHI ,  Atsushi TANAKA ,  Masayuki SUZUKI ,  Yoshihiko KANEMITSU

IPC: H01L31/0352 ,  H01L31/0304 ,  H01L31/032 ,  H01L33/00 ,  H01L33/06 ,  H01L33/30 ,  H01L33/32 ,  H01L33/26 ,  H01L29/786 ,  H01L29/06 ,  H01L29/12 ,  H01L29/66 ,  H01L21/02 ,  C07F7/24 ,  C07F9/06 ,  H01L31/18

CPC classification number: H01L31/035218 ,  B82Y10/00 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  C07F7/24 ,  C07F9/06 ,  H01L21/02422 ,  H01L21/02538 ,  H01L21/0254 ,  H01L21/02546 ,  H01L21/02549 ,  H01L21/02568 ,  H01L21/02601 ,  H01L21/02628 ,  H01L29/0665 ,  H01L29/122 ,  H01L29/127 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/78681 ,  H01L29/78696 ,  H01L31/0304 ,  H01L31/03044 ,  H01L31/0324 ,  H01L31/072 ,  H01L31/18 ,  H01L31/184 ,  H01L31/1856 ,  H01L33/0062 ,  H01L33/0075 ,  H01L33/0091 ,  H01L33/06 ,  H01L33/26 ,  H01L33/30 ,  H01L33/32 ,  Y02E10/544 ,  Y02E10/549 ,  Y02P70/521 ,  Y10S977/774 ,  Y10T428/249921 ,  Y10T428/268

Abstract: A semiconductor film, including: an assembly of semiconductor quantum dots containing a metal atom; and at least one ligand that is coordinated to the semiconductor quantum dots and that is selected from a ligand represented by Formula (A), a ligand represented by Formula (B), and a ligand represented by Formula (C): wherein, in Formula (A), X1 represents —SH, —NH2, or —OH; and each of A1 and B1 independently represents a hydrogen atom or a substituent having from 1 to 10 atoms; provided that when A1 and B1 are both hydrogen atoms, X1 represents —SH or —OH; in Formula (B), X2 represents —SH, —NH2, or —OH; and each of A2 and B2 independently represents a hydrogen atom or a substituent having from 1 to 10 atoms; and in Formula (C), A3 represents a hydrogen atom or a substituent having from 1 to 10 atoms.

Abstract translation: 一种半导体膜，包括：包含金属原子的半导体量子点的组件; 和与半导体量子点配位的至少一种配体，其选自由式（A）表示的配体，式（B）表示的配体和由式（C）表示的配位体：其中，在式 （A）中，X 1表示-SH，-NH 2或-OH; A1和B1各自独立地表示氢原子或具有1至10个原子的取代基; 条件是当A1和B1都是氢原子时，X1表示-SH或-OH; 在式（B）中，X 2表示-SH，-NH 2或-OH; A2和B2各自独立地表示氢原子或具有1至10个原子的取代基; 在式（C）中，A3表示氢原子或具有1〜10个原子的取代基。

公开(公告)号：US09099628B2

公开(公告)日：2015-08-04

申请号：US14109075

申请日：2013-12-17

Applicant: ROHM CO., LTD.

Inventor： Yohei Ito

IPC: H01L29/06 ,  H01L33/60 ,  H01L33/22 ,  H01L33/38

CPC classification number: H01L33/24 ,  H01L33/0062 ,  H01L33/06 ,  H01L33/22 ,  H01L33/38 ,  H01L33/60 ,  H01L2933/0016

Abstract: A semiconductor light emitting device includes a substrate structure; a semiconductor layer disposed on the substrate structure, the semiconductor layer including a light emitting layer; and an electrode formed on a surface of the semiconductor layer, wherein a relatively coarse uneven portion and a relatively fine uneven portion are formed by a frost process on a surface of the semiconductor layer at a side of the electrode.

Abstract translation: 半导体发光器件包括衬底结构; 设置在所述衬底结构上的半导体层，所述半导体层包括发光层; 以及形成在所述半导体层的表面上的电极，其中，在所述电极侧的所述半导体层的表面上通过霜冻法形成相对粗糙的凹凸部和相对微细的凹凸部。

公开(公告)号：US09099609B2

公开(公告)日：2015-08-04

申请号：US13392410

申请日：2010-08-27

Applicant: Ok Hyun Nam ,  Geun Ho Yoo

Inventor： Ok Hyun Nam ,  Geun Ho Yoo

IPC: H01L21/20 ,  H01L33/20 ,  H01L33/16 ,  H01L33/00

CPC classification number: H01L33/20 ,  H01L33/0062 ,  H01L33/16

Abstract: Provided are a high-quality non-polar/semi-polar semiconductor device with reduced defect density and improved internal quantum efficiency and light extraction efficiency, and a manufacturing method thereof. The manufacturing method is a method for manufacturing a semiconductor device, in which a template layer and a semiconductor device structure are formed on a sapphire substrate having a crystal plane for growing a non-polar or semi-polar nitride semiconductor layer. The sapphire substrate is etched to form uneven patterns, and the template layer including a nitride semiconductor layer and a GaN layer is formed on the sapphire substrate in which the uneven patterns are formed.

Abstract translation: 提供了一种具有降低的缺陷密度和提高的内部量子效率和光提取效率的高品质非极性/半极性半导体器件及其制造方法。 制造方法是制造半导体器件的方法，其中在具有用于生长非极性或半极性氮化物半导体层的晶面的蓝宝石衬底上形成模板层和半导体器件结构。 蚀刻蓝宝石衬底以形成不均匀图案，并且在形成有不均匀图案的蓝宝石衬底上形成包括氮化物半导体层和GaN层的模板层。

公开(公告)号：US09093605B2

公开(公告)日：2015-07-28

申请号：US13937510

申请日：2013-07-09

Applicant: EPISTAR CORPORATION

Inventor： De Shan Kuo ,  Tsun Kai Ko

IPC: H01L33/00 ,  H01L33/30 ,  H01L31/0352 ,  H01L33/12 ,  H01L33/10 ,  H01L33/14 ,  H01L51/52

CPC classification number: H01L33/30 ,  H01L31/035227 ,  H01L33/0062 ,  H01L33/007 ,  H01L33/10 ,  H01L33/12 ,  H01L33/145 ,  H01L51/5275 ,  H01S2304/12

Abstract: An optoelectronic device comprises: a substrate having a first surface and a normal direction perpendicular to the first surface; a first semiconductor formed on the first surface of the substrate, comprising a plurality of hollow components formed in the first semiconductor layer; a first protection layer formed on a sidewall and a bottom wall of the plurality of the hollow components, and the bottom wall comprises a portion of the first surface; and a buffer layer formed on the first semiconductor layer wherein the buffer layer comprises a first surface and a second surface opposite to the first surface.

Abstract translation: 光电子器件包括：具有垂直于第一表面的第一表面和法线方向的衬底; 形成在所述基板的第一表面上的第一半导体，包括形成在所述第一半导体层中的多个中空部件; 形成在所述多个所述中空部件的侧壁和底壁上的第一保护层，所述底壁包括所述第一表面的一部分; 以及形成在所述第一半导体层上的缓冲层，其中所述缓冲层包括第一表面和与所述第一表面相对的第二表面。

公开(公告)号：US09070839B2

公开(公告)日：2015-06-30

申请号：US13984348

申请日：2012-02-08

Applicant: Tao Wang

Inventor： Tao Wang

IPC: H01L21/00 ,  H01L27/15 ,  H01L33/44 ,  B82Y20/00 ,  H01L33/18 ,  H01L33/00 ,  H01L33/08 ,  H01L33/42

CPC classification number: H01L33/44 ,  B82Y20/00 ,  H01L33/005 ,  H01L33/0062 ,  H01L33/08 ,  H01L33/18 ,  H01L33/42

Abstract: A method (100) of making a semiconductor device, for example a light emitting diode. The method (100) includes providing (105) a semiconductor wafer, and providing (110) a protective layer over the semiconductor wafer. Preferably the protective layer comprises indium-tin oxide. Processing steps are performed on the wafer and the protective layer is arranged to protect the wafer during the processing steps. The processing steps may include forming a mask layer (115) over the protective layer, which is used for etching through the protective layer and into the semiconductor wafer, removing the mask layer, or etching filling materials (150) provided over the selectively etched semiconductor wafer.

Abstract translation: 制造半导体器件（例如发光二极管）的方法（100）。 方法（100）包括提供（105）半导体晶片，并且在半导体晶片上提供（110）保护层。 优选地，保护层包括氧化铟锡。 在晶片上执行处理步骤，并且保护层被布置成在处理步骤期间保护晶片。 处理步骤可以包括在保护层上形成掩模层（115），该掩模层用于蚀刻通过保护层并进入半导体晶片，去除掩模层，或蚀刻设置在选择性蚀刻半导体上的填充材料（150） 晶圆。