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    Magnetic tunneling junction film structure with process determined in-plane magnetic anisotropy
    51.
    发明申请
    Magnetic tunneling junction film structure with process determined in-plane magnetic anisotropy 有权
    磁隧道结膜结构与工艺确定面内磁各向异性

    公开(公告)号：US20070008661A1

    公开(公告)日：2007-01-11

    申请号：US11515533

    申请日：2006-09-05

    Applicant: Tai Min ,  Cheng Horng ,  Po Kang Wang

    Inventor： Tai Min ,  Cheng Horng ,  Po Kang Wang

    IPC: G11B5/127

    CPC classification number: H01L43/08 ,  B82Y25/00 ,  B82Y40/00 ,  G11C11/161 ,  H01F10/3218 ,  H01F10/3272 ,  H01F41/307 ,  H01L43/12

    Abstract: An MTJ memory cell and/or an array of such cells is provided wherein each such cell has a small circular horizontal cross-section of 1.0 microns or less in diameter and wherein the ferromagnetic free layer of each such cell has a magnetic anisotropy produced by a magnetic coupling with a thin antiferromagnetic layer that is formed on the free layer. The MTJ memory cell so provided is far less sensitive to shape irregularities and edge defects than cells of the prior art.

    Abstract translation: 提供MTJ存储器单元和/或这种单元的阵列，其中每个这样的单元具有直径为1.0微米或更小的小的圆形水平横截面，并且其中每个这样的单元的铁磁性自由层具有由 与在自由层上形成的薄的反铁磁层的磁耦合。 如此提供的MTJ存储单元对于形状不规则和边缘缺陷的敏感性远低于现有技术的单元。

    Exchange coupling film and magnetoresistive element using the same
    52.
    发明授权
    Exchange coupling film and magnetoresistive element using the same 有权
    交换耦合膜和使用其的磁阻元件

    公开(公告)号：US07106559B2

    公开(公告)日：2006-09-12

    申请号：US11208368

    申请日：2005-08-17

    Applicant: Naoya Hasegawa ,  Masamichi Saito

    Inventor： Naoya Hasegawa ,  Masamichi Saito

    IPC: G11B5/66

    CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3932 ,  G11B2005/3996 ,  H01F10/123 ,  H01F10/3218 ,  H01F10/3268 ,  H01F41/325 ,  Y10T428/11 ,  Y10T428/1107 ,  Y10T428/1143 ,  Y10T428/12465 ,  Y10T428/12826 ,  Y10T428/12854 ,  Y10T428/265 ,  Y10T428/32

    Abstract: An exchange coupling film including an antiferromagnetic layer and a ferromagnetic layer in contact with the antiferromagnetic layer so as to generate an exchange coupling magnetic field is provided. A PtMn alloy is used as the material of the antiferromagnetic layer. Crystal planes of the antiferromagnetic layer and the ferromagnetic layer preferentially aligned parallel to the interface are crystallographically identical and crystallographically identical axes lying in these crystal planes are oriented, at least partly, in different directions between the antiferromagnetic layer and the ferromagnetic layer. Thus, a proper order transformation occurs in the antiferromagnetic layer as a result of heat treatment and an increased exchange coupling magnetic field can be obtained.

    Abstract translation: 提供了包括与反铁磁层接触的反铁磁层和铁磁层以产生交换耦合磁场的交换耦合膜。 使用PtMn合金作为反铁磁层的材料。 反铁磁性层和铁磁性层平行于界面优先取向的晶面是晶体学上相同的，位于这些晶面的晶体学相同的轴至少部分地在反铁磁层和铁磁层之间的不同方向上取向。 因此，作为热处理的结果，在反铁磁性层中发生适当的顺序变换，并且可以获得增加的交换耦合磁场。

    Antiferromagnetic layer system and methods for magnectically storing data in anti-ferromagnetic layer system of the like
    59.
    发明申请
    Antiferromagnetic layer system and methods for magnectically storing data in anti-ferromagnetic layer system of the like 审中-公开
    反铁磁层系统和方法，用于在类似的反铁磁层系统中大量存储数据

    公开(公告)号：US20040086750A1

    公开(公告)日：2004-05-06

    申请号：US10473591

    申请日：2003-10-10

    Inventor： Oliver De Haas ,  Rudolf Schnullfer ,  Claus Schneider

    IPC: B32B009/00

    CPC classification number: B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G11B5/00 ,  G11B5/65 ,  G11B5/66 ,  G11B5/74 ,  G11B7/1387 ,  G11B9/1409 ,  G11B11/10504 ,  G11B11/10515 ,  G11B11/10532 ,  G11B11/10584 ,  G11B11/10586 ,  G11B2005/0002 ,  G11B2005/0005 ,  G11B2005/0021 ,  H01F10/3218 ,  H01F41/302 ,  Y10T428/32

    Abstract: The invention is used in the field of materials engineering and relates to antiferromagnetic layer systems and methods for magnetically storing data, which can be used, for example, in computer hard disks. The object of the invention is to disclose an antiferromagnetic layer system and methods with the aid of which a specific writing and reading of information is possible in such antiferromagnetic layer systems. The object is attained through an antiferromagnetic layer system, comprising at least one ferromagnetic and at least one antiferromagnetic layer, whereby the Curie temperature of the ferromagnetic layer material is greater than the blocking temperature of the antiferromagnetic layer material and in which the ferromagnetic and antiferromagnetic layer(s) are coupled to one another at least with regard to their magnetization configuration by means of exchange anisotropy effects, and in which the layer thickness of the antiferromagnetic layer(s) is a function of the operating temperature of the employed antiferromagnetic layer system, whereby the layer thicknesses likewise increase with increasing operating temperatures.

    Abstract translation: 本发明用于材料工程领域，涉及用于磁存储数据的反铁磁层系统和方法，其可以用于例如计算机硬盘。 本发明的目的是公开一种反铁磁层系统和方法，在这种反铁磁层系统中借助于此可以进行特定的信息写入和读取。 该目的通过反铁磁层系统获得，该反铁磁层系统包括至少一个铁磁和至少一个反铁磁层，由此铁磁层材料的居里温度大于反铁磁层材料的阻挡温度，其中铁磁和反铁磁层 至少通过交换各向异性效应关于它们的磁化结构彼此耦合，并且其中反铁磁层的层厚度是所采用的反铁磁层系统的工作温度的函数， 由此层厚度同样随着工作温度的升高而增加。

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