Invention Application
- Patent Title: Synthetic-ferrimagnet sense-layer for high density MRAM applications
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Application No.: US10762478Application Date: 2004-01-23
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Publication No.: US20040152218A1Publication Date: 2004-08-05
- Inventor: James G. Deak
- Main IPC: H01L021/00
- IPC: H01L021/00
Abstract:
An improved magnetic memory element is provided in which a magnetic sense layer is formed of two ferromagnetic material layers separated by a spacer layer. The two ferromagnetic layers are formed as a synthetic ferrimagnet with stray field coupling and antiferromagnetic exchange coupling across the spacer layer.
Public/Granted literature
- US06946302B2 Synthetic-ferrimagnet sense-layer for high density MRAM applications Public/Granted day:2005-09-20
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