Invention Application
- Patent Title: Magnetic tunneling junction film structure with process determined in-plane magnetic anisotropy
- Patent Title (中): 磁隧道结膜结构与工艺确定面内磁各向异性
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Application No.: US11515533Application Date: 2006-09-05
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Publication No.: US20070008661A1Publication Date: 2007-01-11
- Inventor: Tai Min , Cheng Horng , Po Kang Wang
- Applicant: Tai Min , Cheng Horng , Po Kang Wang
- Main IPC: G11B5/127
- IPC: G11B5/127
Abstract:
An MTJ memory cell and/or an array of such cells is provided wherein each such cell has a small circular horizontal cross-section of 1.0 microns or less in diameter and wherein the ferromagnetic free layer of each such cell has a magnetic anisotropy produced by a magnetic coupling with a thin antiferromagnetic layer that is formed on the free layer. The MTJ memory cell so provided is far less sensitive to shape irregularities and edge defects than cells of the prior art.
Public/Granted literature
- US07994596B2 Magnetic tunneling junction film structure with process determined in-plane magnetic anisotropy Public/Granted day:2011-08-09
Information query
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