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1887 条记录 (耗时 0.028 秒)

    Chemical mechanical polishing conditioner and manufacturing methods thereof
    51.
    发明授权
    Chemical mechanical polishing conditioner and manufacturing methods thereof 有权
    化学机械抛光调理剂及其制造方法

    公开(公告)号：US09259822B2

    公开(公告)日：2016-02-16

    申请号：US14198162

    申请日：2014-03-05

    申请人： Kinik Company

    发明人： Jui-Lin Chou ,  Chia Chun Wang ,  Chia-Feng Chiu ,  Chung-Yi Cheng

    IPC分类号： B24B53/00 ,  B24D3/06 ,  B24D7/18 ,  B24B53/017 ,  B24B53/12

    CPC分类号： B24B53/017 ,  B24B53/12 ,  B24D7/18

    摘要： The present invention relates to a chemical mechanical polishing conditioner and manufacturing methods thereof. The chemical mechanical polishing conditioner comprises: a planar substrate having a leveling surface; a bonding layer disposed on the surface of the planar substrate; and a plurality of abrasive particles embedded in the surface of the bonding layer and fixed to the surface of the planar substrate by the binding layer; wherein the planar substrate is formed by a deformation compensation for the non-planar substrate during curing the binding layer, and thus the tips of the abrasive particles have a leveled height. Therefore, the present invention can effectively improve the problem of thermal deformation of the substrate of the chemical mechanical polishing conditioner during heating and curing process, and thereby enhancing the surface flatness of chemical mechanical polishing conditioner.

    摘要翻译： 化学机械抛光调理剂及其制造方法技术领域本发明涉及化学机械抛光调理剂及其制造方法。 所述化学机械抛光调理剂包括：具有平整表面的平面基板; 设置在所述平面基板的表面上的接合层; 以及嵌入在所述接合层的表面中的多个磨料颗粒，并通过所述粘合层固定在所述平面基板的表面上; 其中所述平面基板通过在固化所述粘合层期间对所述非平面基板进行变形补偿而形成，并且因此所述磨料颗粒的末端具有调平高度。 因此，本发明可以有效地改善加热和固化过程中化学机械抛光调理剂的基材的热变形问题，从而提高化学机械抛光调理剂的表面平整度。

    VACUUM CLEANING SYSTEMS FOR POLISHING PADS, AND RELATED METHODS
    52.
    发明申请
    VACUUM CLEANING SYSTEMS FOR POLISHING PADS, AND RELATED METHODS 有权
    用于抛光垫的真空清洁系统及相关方法

    公开(公告)号：US20160016283A1

    公开(公告)日：2016-01-21

    申请号：US14530163

    申请日：2014-10-31

    申请人： Applied Materials, Inc.

    发明人： Paul D. BUTTERFIELD ,  Shou-Sung CHANG ,  Bum Jick KIM

    IPC分类号： B24B53/017

    CPC分类号： B24B53/017

    摘要： Vacuum cleaning systems and related methods are disclosed. A polishing pad in combination with a fluid, such as a slurry, contacts a substrate to planarize material at the surface thereof and resultantly creates debris. A cleaning system includes an enclosure body having an inlet opening which may be placed proximate to the polishing pad and an exit opening in communication with a vacuum source to remove the debris and the fluid from the polishing pad through a passageway connecting the inlet and exit openings. By including contact members secured to the enclosure body and configured to form an abutment against a working surface of the polishing pad, a Venturi effect zone between the enclosure body and the working surface of the polishing pad may be created to dislodge fluid and debris from the working surface. In this manner, scratches and contamination are avoided for later-polished substrates.

    摘要翻译： 公开了真空清洁系统及相关方法。 与诸如浆料的流体结合的抛光垫与衬底接触以在其表面平坦化材料并且导致碎屑。 清洁系统包括具有可以靠近抛光垫设置的入口开口的外壳主体和与真空源连通的出口，以通过连接入口和出口的通道从抛光垫移除碎屑和流体 。 通过包括固定到外壳主体并被配置为形成与抛光垫的工作表面的抵接件的接触构件，可以产生外壳主体和抛光垫的工作表面之间的文丘里效应区，以将流体和碎屑从 工作面 以这种方式，可以避免稍后抛光的基材产生划伤和污染。

    CHEMICAL MECHANICAL POLISHING METHOD AND APPARATUS
    54.
    发明申请
    CHEMICAL MECHANICAL POLISHING METHOD AND APPARATUS 有权
    化学机械抛光方法及装置

    公开(公告)号：US20150357199A1

    公开(公告)日：2015-12-10

    申请号：US14300705

    申请日：2014-06-10

    申请人： GLOBALFOUNDRIES Inc.

    发明人： Jens KRAMER

    IPC分类号： H01L21/306 ,  H01L21/67 ,  B24B53/017

    CPC分类号： B24B53/017 ,  B24B57/02 ,  H01L21/30625 ,  H01L21/67075 ,  H01L21/67092

    摘要： Methods for polishing a semiconductor wafer using a pad resurfacing arm and an apparatus therefor are disclosed. Embodiments may include providing a semiconductor wafer on a chemical mechanical polishing (CMP) tool, the CMP tool including a polish pad and a pad resurfacing arm which includes a pad cleaning part, a pad conditioning part, and a slurry dispensing part, dispensing a slurry to the polish pad utilizing the pad resurfacing arm, and polishing the semiconductor wafer utilizing the polish pad.

    摘要翻译： 公开了使用衬垫表面修整臂来研磨半导体晶片的方法及其装置。 实施例可以包括在化学机械抛光（CMP）工具上提供半导体晶片，CMP工具包括抛光垫和衬垫表面修复臂，其包括衬垫清洁部分，衬垫调节部分和浆料分配部分， 使用衬垫表面修复臂将其抛光到抛光垫上，并利用抛光垫对半导体晶片进行抛光。

    Polishing apparatus and wear detection method
    58.
    发明授权
    Polishing apparatus and wear detection method 有权
    抛光装置和磨损检测方法

    公开(公告)号：US09144878B2

    公开(公告)日：2015-09-29

    申请号：US14228424

    申请日：2014-03-28

    申请人： Ebara Corporation

    发明人： Ryuichi Kosuge ,  Tadakazu Sone

    IPC分类号： B24B49/00 ,  B24B37/005 ,  B24B53/017

    CPC分类号： H01L22/26 ,  B24B37/005 ,  B24B49/00 ,  B24B53/017 ,  H01L21/30625 ,  H01L21/67075

    摘要： There is provided a polishing apparatus capable of detecting uneven wear occurring on a polishing pad and detecting an appropriate replacement timing of the polishing pad. The polishing apparatus detects, every predetermined time, a value of rotation speed or a value of rotation torque of a table drive shaft for rotationally driving a polishing table or a dresser drive shaft for driving a dresser, or a value of swing torque of a dresser swing shaft for driving the dresser; calculates a change quantity thereof based on the value of the detected rotation speed, the value of the detected rotation torque, or the value of the detected swing torque; determines whether or not the change quantity exceeds a predetermined value; and notifies a user of a warning when a determination is made that the change quantity exceeds the predetermined value.

    摘要翻译： 提供了一种能够检测在抛光垫上发生的不均匀磨损并检测抛光垫的适当替换定时的抛光装置。 抛光装置每隔预定时间检测用于旋转驱动研磨台或用于驱动修整器的修整器驱动轴的转台驱动轴的转速值或转矩值，或修整器的摆动扭矩值 用于驱动梳妆台的摆动轴; 基于检测到的转速的值，检测到的旋转转矩的值或检测到的摆动转矩的值来计算其变化量; 确定变化量是否超过预定值; 并且当确定变化量超过预定值时，通知用户警告。

    SURFACE GRINDING METHOD FOR WORKPIECE
    59.
    发明申请
    SURFACE GRINDING METHOD FOR WORKPIECE 有权
    工件表面研磨方法

    公开(公告)号：US20150239089A1

    公开(公告)日：2015-08-27

    申请号：US14628615

    申请日：2015-02-23

    申请人： KOYO MACHINE INDUSTRIES CO., LTD.

    发明人： Haruyuki HIRAYAMA ,  Kazuhiro YUSOU

    IPC分类号： B24B37/04 ,  B24B53/017

    CPC分类号： B24B37/042 ,  B24B37/005 ,  B24B37/10 ,  B24B53/017 ,  B24B57/02

    摘要： [Problem] To machine a workpiece such as a hard brittle material or difficult-to-cut material innovatively and accurately and to improve the machining rate significantly.[Solution Means] In grinding a workpiece W by a cup grinding wheel 3 while supplying a slurry 5 containing abrasive grains, the grinding wheel 3 is rotated at low peripheral speed. No more than 500 m/min., preferably 30 to 430 m/min., is appropriate for the peripheral speed of the grinding wheel 3. The slurry 5 at a flow rate of no more than 4.0 ml/cm2/h, preferably of 1.0 to 2.0 ml/cm2/h is dropped or sprayed little by little onto a ground surface of the workpiece W.

    摘要翻译： [问题]创新，准确地加工硬质材料或难切割材料等工件，显着提高加工速度。 [解决方案]在供给含有磨粒的浆料5的同时，通过杯式砂轮3研磨工件W时，砂轮3以低圆周速度旋转。 不超过500m / min，优选为30〜430m / min，适合于砂轮3的圆周速度。浆料5的流速不超过4.0ml / cm 2 / h，优选为 将1.0至2.0ml / cm 2 / h一滴一滴地滴下或喷洒到工件W的地面上。

    CHEMICAL MECHANICAL POLISHING CONDITIONER WITH OPTIMAL ABRASIVE EXPOSING RATE
    60.
    发明申请
    CHEMICAL MECHANICAL POLISHING CONDITIONER WITH OPTIMAL ABRASIVE EXPOSING RATE 审中-公开
    化学机械抛光调理器，具有最佳的磨耗率

    公开(公告)号：US20150202735A1

    公开(公告)日：2015-07-23

    申请号：US14539842

    申请日：2014-11-12

    申请人： Kinik Company

    发明人： I-Tsao LIAO

    IPC分类号： B24B53/017 ,  B24B53/12

    CPC分类号： B24B53/017 ,  B24B53/12

    摘要： The present invention relates to a chemical mechanical polishing conditioner with optimal abrasive exposing rate, comprising a substrate; a bonding layer disposed on the substrate; and a plurality of abrasive particles placed on the bonding layer, and the abrasive particles are placed on the substrate by the bonding layer; wherein each abrasive particle has an abrasive exposing rate which is ¼ to ¾ of particle sizes of the abrasive particles and is measured by a height measuring device. Therefore, the chemical mechanical polishing conditioner with optimal abrasive exposing rate of the present invention can control the exposing rate of the abrasive particles to improve the cut rate of the conditioner.

    摘要翻译： 本发明涉及具有最佳研磨曝光速率的化学机械抛光调理剂，其包含基材; 设置在所述基板上的接合层; 以及多个磨料颗粒放置在粘合层上，并且磨料颗粒通过粘结层放置在基底上; 其中每个磨料颗粒的磨料暴露速率为研磨颗粒粒径的1/4至3/4，并由高度测量装置测量。 因此，具有本发明的最佳研磨曝光率的化学机械抛光调理剂可以控制研磨剂颗粒的曝光速率，以提高调理剂的切割速率。