公开(公告)号：US20220406567A1

公开(公告)日：2022-12-22

申请号：US17349763

申请日：2021-06-16

Applicant: Applied Materials, Inc.

Inventor： Yang YANG ,  Yue GUO ,  Kartik RAMASWAMY

IPC: H01J37/32

Abstract: Embodiments provided herein generally include apparatus, plasma processing systems and methods for generation of a waveform for plasma processing of a substrate in a processing chamber. Embodiments of the disclosure include an apparatus and method for generating a pulsed-voltage waveform that includes coupling a main voltage source to an electrode during a first phase of a process of generating a pulsed-voltage waveform, wherein the electrode is disposed within a processing chamber, coupling a ground node to the electrode during a second phase of the process of generating the pulsed-voltage waveform, coupling a first compensation voltage source to the electrode during a third phase of the process of generating the pulsed-voltage waveform, and coupling a second compensation voltage source to the electrode during a fourth phase of the process of generating the pulsed-voltage waveform.

公开(公告)号：US20220351969A1

公开(公告)日：2022-11-03

申请号：US17624174

申请日：2020-06-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Bhargav Sridhar CITLA ,  Joshua Alan RUBNITZ ,  Jethro TANNOS ,  Srinivas D. NEMANI ,  Kartik RAMASWAMY ,  Yang YANG

IPC: H01L21/02 ,  C23C16/56 ,  C23C16/505 ,  H01J37/32 ,  C23C16/30

Abstract: Methods and apparatus for forming an integrated circuit structure, comprising: delivering a process gas to a process volume of a process chamber; applying low frequency RF power to an electrode formed from a high secondary electron emission coefficient material disposed in the process volume; generating a plasma comprising ions in the process volume; bombarding the electrode with the ions to cause the electrode to emit electrons and form an electron beam; and contacting a dielectric material with the electron beam to cure the dielectric material, wherein the dielectric material is a flowable chemical vapor deposition product. In embodiments, the curing stabilizes the dielectric material by reducing the oxygen content and increasing the nitrogen content of the dielectric material.

公开(公告)号：US20220037119A1

公开(公告)日：2022-02-03

申请号：US17315256

申请日：2021-05-07

Applicant: Applied Materials, Inc.

Inventor： Leonid DORF ,  Rajinder DHINDSA ,  James ROGERS ,  Daniel Sang BYUN ,  Evgeny KAMENETSKIY ,  Yue GUO ,  Kartik RAMASWAMY ,  Valentin N. TODOROW ,  Olivier LUERE ,  Linying Cui

IPC: H01J37/32

Abstract: Embodiments of the disclosure provided herein include an apparatus and method for the plasma processing of a substrate in a processing chamber. More specifically, embodiments of this disclosure describe a biasing scheme that is configured to provide a radio frequency (RF) generated RF waveform from an RF generator to one or more electrodes within a processing chamber and a pulsed-voltage (PV) waveform delivered from one or more pulsed-voltage (PV) generators to the one or more electrodes within the processing chamber. The plasma process(es) disclosed herein can be used to control the shape of an ion energy distribution function (IEDF) and the interaction of the plasma with a surface of a substrate during plasma processing.

公开(公告)号：US20190287765A1

公开(公告)日：2019-09-19

申请号：US16432930

申请日：2019-06-06

Applicant: Applied Materials, Inc.

Inventor： Kenneth S. COLLINS ,  Michael R. RICE ,  Kartik RAMASWAMY ,  James D. CARDUCCI ,  Yue GUO ,  Olga REGELMAN

IPC: H01J37/32

Abstract: Embodiments of the disclosure provide a plasma source assembly and process chamber design that can be used for any number of substrate processing techniques. The plasma source may include a plurality of discrete electrodes that are integrated with a reference electrode and a gas feed structure to generate a uniform, stable and repeatable plasma during processing. The plurality of discrete electrodes include an array of electrodes that can be biased separately, in groups or all in unison, relative to a reference electrode. The plurality of discrete electrodes may include a plurality of conductive rods that are positioned to generate a plasma within a processing region of a process chamber. The plurality of discrete electrodes is provided RF power from standing or traveling waves imposed on a power distribution element to which the electrodes are connected.

公开(公告)号：US20190221437A1

公开(公告)日：2019-07-18

申请号：US16239170

申请日：2019-01-03

Applicant: Applied Materials, Inc.

Inventor： Yang YANG ,  Kartik RAMASWAMY ,  Kenneth S. COLLINS ,  Steven LANE ,  Gonzalo MONROY ,  Lucy Zhiping CHEN ,  Yue GUO

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/683 ,  H01J37/305 ,  H01L21/67

Abstract: Embodiments described herein relate to apparatus and methods for performing electron beam reactive plasma etching (EBRPE). In one embodiment, an apparatus for performing EBRPE processes includes an electrode formed from a material having a high secondary electron emission coefficient. In another embodiment, methods for etching a substrate include generating a plasma and bombarding an electrode with ions from the plasma to cause the electrode to emit electrons. The electrons are accelerated toward a substrate to induce etching of the substrate.

公开(公告)号：US20190057862A1

公开(公告)日：2019-02-21

申请号：US16055974

申请日：2018-08-06

Applicant: Applied Materials, Inc.

Inventor： Yang YANG ,  Eswaranand VENKATASUBRAMANIAN ,  Kartik RAMASWAMY ,  Kenneth S. COLLINS ,  Steven LANE ,  Gonzalo MONROY ,  Lucy Zhiping CHEN ,  Yue GUO

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/3213 ,  H01L21/311 ,  H01L21/033 ,  C23C16/26 ,  C23C16/505 ,  C23C16/52

Abstract: A method of forming a transparent carbon layer on a substrate is provided. The method comprises generating an electron beam plasma above a surface of a substrate positioned over a first electrode and disposed in a processing chamber having a second electrode positioned above the first electrode. The method further comprises flowing a hydrocarbon-containing gas mixture into the processing chamber, wherein the second electrode has a surface containing a secondary electrode emission material selected from a silicon-containing material and a carbon-containing material. The method further comprises applying a first RF power to at least one of the first electrode and the second electrode and forming a transparent carbon layer on the surface of the substrate.

公开(公告)号：US20190051496A1

公开(公告)日：2019-02-14

申请号：US16059608

申请日：2018-08-09

Applicant: Applied Materials, Inc.

Inventor： Kenneth S. COLLINS ,  Michael R. RICE ,  Kartik RAMASWAMY ,  James D. CARDUCCI ,  Yue GUO ,  Olga REGELMAN

IPC: H01J37/32

Abstract: Embodiments of the disclosure provide a plasma source assembly and process chamber design that can be used for any number of substrate processing techniques. The plasma source may include a plurality of discrete electrodes that are integrated with a reference electrode and a gas feed structure to generate a uniform, stable and repeatable plasma during processing. The plurality of discrete electrodes include an array of electrodes that can be biased separately, in groups or all in unison, relative to a reference electrode. The plurality of discrete electrodes may include a plurality of conductive rods that are positioned to generate a plasma within a processing region of a process chamber. The plurality of discrete electrodes is provided RF power from standing or traveling waves imposed on a power distribution element to which the electrodes are connected.

公开(公告)号：US20180366306A1

公开(公告)日：2018-12-20

申请号：US16113736

申请日：2018-08-27

Applicant: Applied Materials, Inc.

Inventor： Yang YANG ,  Kartik RAMASWAMY ,  Steven LANE ,  Lawrence WONG ,  Shahid RAUF ,  Andrew NGUYEN ,  Kenneth S. COLLINS ,  Roger Alan LINDLEY

IPC: H01J37/32

Abstract: Implementations described herein provide a substrate support assembly which enables tuning of a plasma within a plasma chamber. In one embodiment, a method for tuning a plasma in a chamber is provided. The method includes providing a first radio frequency power and a direct current power to a first electrode in a substrate support assembly, providing a second radio frequency power to a second electrode in the substrate support assembly at a different location than the first electrode, monitoring parameters of the first and second radio frequency power, and adjusting one or both of the first and second radio frequency power based on the monitored parameters.

公开(公告)号：US20180342375A1

公开(公告)日：2018-11-29

申请号：US15606739

申请日：2017-05-26

Applicant: Applied Materials, Inc.

Inventor： Andrew NGUYEN ,  Kartik RAMASWAMY ,  Michael G. CHAFIN ,  Yang YANG ,  Anilkumar RAYAROTH ,  Lu LIU

IPC: H01J37/32

Abstract: Embodiments of the disclosure relate to apparatus and method for tunable a plasma process within a plasma processing chamber. In one embodiment of the disclosure, a heater assembly for a plasma processing chamber is disclosed. The heater assembly includes a resistive heating element, a first lead coupling the resistive heating element to an RF filter and a tunable circuit element operable to adjust an impedance between the resistive heating element and the RF filter. Another embodiment provides a method for controlling a plasma process in a plasma processing chamber by forming a plasma from a process gas present inside the plasma processing chamber and adjusting an impedance between a resistive heating element and an RF filter coupled between the resistive heating element and a power source for the resistive heating element, while the plasma is present in the plasma processing chamber.

公开(公告)号：US20160314937A1

公开(公告)日：2016-10-27

申请号：US15198993

申请日：2016-06-30

Applicant: Applied Materials, Inc.

Inventor： James D. CARDUCCI ,  Hamid TAVASSOLI ,  Ajit BALAKRISHNA ,  Zhigang CHEN ,  Andrew NGUYEN ,  Douglas A. BUCHBERGER, JR. ,  Kartik RAMASWAMY ,  Shahid RAUF ,  Kenneth S. COLLINS

IPC: H01J37/32

Abstract: Embodiments of the present invention provide a plasma chamber design that allows extremely symmetrical electrical, thermal, and gas flow conductance through the chamber. By providing such symmetry, plasma formed within the chamber naturally has improved uniformity across the surface of a substrate disposed in a processing region of the chamber. Further, other chamber additions, such as providing the ability to manipulate the gap between upper and lower electrodes as well as between a gas inlet and a substrate being processed, allows better control of plasma processing and uniformity as compared to conventional systems.