公开(公告)号：US20210384040A1

公开(公告)日：2021-12-09

申请号：US17408943

申请日：2021-08-23

Applicant: Applied Materials, Inc.

Inventor： Bhargav S. CITLA ,  Jethro TANNOS ,  Jingyi LI ,  Douglas A. BUCHBERGER, JR. ,  Zhong Qiang HUA ,  Srinivas D. NEMANI ,  Ellie Y. YIEH

IPC: H01L21/311 ,  H01L21/762 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/67 ,  C23C16/515 ,  H01L21/02 ,  C23C16/509 ,  C23C16/517 ,  C23C16/505

Abstract: Embodiments of the present invention provide an apparatus and methods for depositing a dielectric material using RF bias pulses along with remote plasma source deposition for manufacturing semiconductor devices, particularly for filling openings with high aspect ratios in semiconductor applications. In one embodiment, a method of depositing a dielectric material includes providing a gas mixture into a processing chamber having a substrate disposed therein, forming a remote plasma in a remote plasma source and delivering the remote plasma to an interior processing region defined in the processing chamber, applying a RF bias power to the processing chamber in pulsed mode, and forming a dielectric material in an opening defined in a material layer disposed on the substrate in the presence of the gas mixture and the remote plasma.

公开(公告)号：US20220351969A1

公开(公告)日：2022-11-03

申请号：US17624174

申请日：2020-06-19

Applicant: APPLIED MATERIALS, INC.

Inventor： Bhargav Sridhar CITLA ,  Joshua Alan RUBNITZ ,  Jethro TANNOS ,  Srinivas D. NEMANI ,  Kartik RAMASWAMY ,  Yang YANG

IPC: H01L21/02 ,  C23C16/56 ,  C23C16/505 ,  H01J37/32 ,  C23C16/30

Abstract: Methods and apparatus for forming an integrated circuit structure, comprising: delivering a process gas to a process volume of a process chamber; applying low frequency RF power to an electrode formed from a high secondary electron emission coefficient material disposed in the process volume; generating a plasma comprising ions in the process volume; bombarding the electrode with the ions to cause the electrode to emit electrons and form an electron beam; and contacting a dielectric material with the electron beam to cure the dielectric material, wherein the dielectric material is a flowable chemical vapor deposition product. In embodiments, the curing stabilizes the dielectric material by reducing the oxygen content and increasing the nitrogen content of the dielectric material.

公开(公告)号：US20200090946A1

公开(公告)日：2020-03-19

申请号：US16132837

申请日：2018-09-17

Applicant: Applied Materials, Inc.

Inventor： Bhargav S. CITLA ,  Jethro TANNOS ,  Jingyi LI ,  Douglas A. BUCHBERGER, JR. ,  Zhong Qiang HUA ,  Srinivas D. NEMANI ,  Ellie Y. YIEH

IPC: H01L21/311 ,  H01L21/762 ,  H01L21/67 ,  H01L21/3065 ,  H01J37/32

Abstract: Embodiments of the present invention provide an apparatus and methods for depositing a dielectric material using RF bias pulses along with remote plasma source deposition for manufacturing semiconductor devices, particularly for filling openings with high aspect ratios in semiconductor applications. In one embodiment, a method of depositing a dielectric material includes providing a gas mixture into a processing chamber having a substrate disposed therein, forming a remote plasma in a remote plasma source and delivering the remote plasma to an interior processing region defined in the processing chamber, applying a RF bias power to the processing chamber in pulsed mode, and forming a dielectric material in an opening defined in a material layer disposed on the substrate in the presence of the gas mixture and the remote plasma.

公开(公告)号：US20220301867A1

公开(公告)日：2022-09-22

申请号：US17208719

申请日：2021-03-22

Applicant: Applied Materials, Inc.

Inventor： Jethro TANNOS ,  Bhargav Sridhar CITLA ,  Srinivas D. NEMANI ,  Ellie YIEH ,  Joshua Alan RUBNITZ ,  Erica CHEN ,  Soham Sunjay ASRANI ,  Nikolaos BEKIARIS ,  Douglas Arthur BUCHBERGER, JR.

IPC: H01L21/02 ,  H01J37/32 ,  C23C16/505 ,  C23C16/52 ,  C23C16/40 ,  C23C16/56 ,  C23C16/458

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method includes supplying a vaporized precursor into a processing volume, supplying activated elements including ions and radicals from a remote plasma source, energizing the activated elements using RF source power at a first duty cycle to react with the vaporized precursor to deposit an SiNHx film onto a substrate disposed in the processing volume, supplying a first process gas from the remote plasma source while providing RF bias power at a second duty cycle different from the first duty cycle to the substrate support to convert the SiNHx film to an SiOx film, supplying a process gas mixture formed from a second process gas supplied from the remote plasma source and a third process gas supplied from the gas supply while providing RF bias power at the second duty cycle to the substrate support, and annealing the substrate.

公开(公告)号：US20220298636A1

公开(公告)日：2022-09-22

申请号：US17208735

申请日：2021-03-22

Applicant: Applied Materials, Inc.

Inventor： Soham Sunjay ASRANI ,  Joshua Alan RUBNITZ ,  Bhargav Sridhar CITLA ,  Srinivas D. NEMANI ,  Erica CHEN ,  Nikolaos BEKIARIS ,  Douglas Arthur BUCHBERGER, JR. ,  Jethro TANNOS ,  Ellie YIEH

IPC: C23C16/455 ,  C23C16/515 ,  C23C16/505 ,  C23C16/52 ,  C23C16/458

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate comprises supplying a vaporized silicon containing precursor from a gas supply into a processing volume of a processing chamber, supplying a first process gas from the gas supply into the processing volume, energizing the first process gas using RF source power at a first duty cycle to react with the vaporized silicon containing precursor, and supplying a process gas mixture from the gas supply while providing RF bias power at a second duty cycle different from the first duty cycle to a substrate support disposed in the processing volume to deposit a SiHx film onto a substrate supported on the substrate support.