公开(公告)号：US20200090946A1

公开(公告)日：2020-03-19

申请号：US16132837

申请日：2018-09-17

Applicant: Applied Materials, Inc.

Inventor： Bhargav S. CITLA ,  Jethro TANNOS ,  Jingyi LI ,  Douglas A. BUCHBERGER, JR. ,  Zhong Qiang HUA ,  Srinivas D. NEMANI ,  Ellie Y. YIEH

IPC: H01L21/311 ,  H01L21/762 ,  H01L21/67 ,  H01L21/3065 ,  H01J37/32

Abstract: Embodiments of the present invention provide an apparatus and methods for depositing a dielectric material using RF bias pulses along with remote plasma source deposition for manufacturing semiconductor devices, particularly for filling openings with high aspect ratios in semiconductor applications. In one embodiment, a method of depositing a dielectric material includes providing a gas mixture into a processing chamber having a substrate disposed therein, forming a remote plasma in a remote plasma source and delivering the remote plasma to an interior processing region defined in the processing chamber, applying a RF bias power to the processing chamber in pulsed mode, and forming a dielectric material in an opening defined in a material layer disposed on the substrate in the presence of the gas mixture and the remote plasma.

公开(公告)号：US20210384040A1

公开(公告)日：2021-12-09

申请号：US17408943

申请日：2021-08-23

Applicant: Applied Materials, Inc.

Inventor： Bhargav S. CITLA ,  Jethro TANNOS ,  Jingyi LI ,  Douglas A. BUCHBERGER, JR. ,  Zhong Qiang HUA ,  Srinivas D. NEMANI ,  Ellie Y. YIEH

IPC: H01L21/311 ,  H01L21/762 ,  H01J37/32 ,  H01L21/3065 ,  H01L21/67 ,  C23C16/515 ,  H01L21/02 ,  C23C16/509 ,  C23C16/517 ,  C23C16/505

Abstract: Embodiments of the present invention provide an apparatus and methods for depositing a dielectric material using RF bias pulses along with remote plasma source deposition for manufacturing semiconductor devices, particularly for filling openings with high aspect ratios in semiconductor applications. In one embodiment, a method of depositing a dielectric material includes providing a gas mixture into a processing chamber having a substrate disposed therein, forming a remote plasma in a remote plasma source and delivering the remote plasma to an interior processing region defined in the processing chamber, applying a RF bias power to the processing chamber in pulsed mode, and forming a dielectric material in an opening defined in a material layer disposed on the substrate in the presence of the gas mixture and the remote plasma.