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公开(公告)号:US20180342375A1
公开(公告)日:2018-11-29
申请号:US15606739
申请日:2017-05-26
Applicant: Applied Materials, Inc.
Inventor: Andrew NGUYEN , Kartik RAMASWAMY , Michael G. CHAFIN , Yang YANG , Anilkumar RAYAROTH , Lu LIU
IPC: H01J37/32
Abstract: Embodiments of the disclosure relate to apparatus and method for tunable a plasma process within a plasma processing chamber. In one embodiment of the disclosure, a heater assembly for a plasma processing chamber is disclosed. The heater assembly includes a resistive heating element, a first lead coupling the resistive heating element to an RF filter and a tunable circuit element operable to adjust an impedance between the resistive heating element and the RF filter. Another embodiment provides a method for controlling a plasma process in a plasma processing chamber by forming a plasma from a process gas present inside the plasma processing chamber and adjusting an impedance between a resistive heating element and an RF filter coupled between the resistive heating element and a power source for the resistive heating element, while the plasma is present in the plasma processing chamber.
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公开(公告)号:US20200152423A1
公开(公告)日:2020-05-14
申请号:US16601241
申请日:2019-10-14
Applicant: Applied Materials, Inc.
Inventor: Andrew NGUYEN , Michael G. CHAFIN , Lu LIU , Anilkumar RAYAROTH
Abstract: A radio frequency (RF) filter system for a substrate processing chamber comprises a first RF filter coupled to a first element of the processing chamber and a second RF filter coupled to the first element of the processing chamber. Each of the RF filters comprises a first filter stage configured to reject a first frequency, a second filter stage coupled to the first filter stage and configured to reject a second frequency, and a third filter stage coupled to the second filter stage and configured to reject the first frequency. Further, the first filter stage comprises a first inductor and a first capacitance, the second filter stage comprises a second inductor and a second capacitance, the third filter stage comprises a third inductor and a third capacitance.
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