公开(公告)号：US20180342375A1

公开(公告)日：2018-11-29

申请号：US15606739

申请日：2017-05-26

Applicant: Applied Materials, Inc.

Inventor： Andrew NGUYEN ,  Kartik RAMASWAMY ,  Michael G. CHAFIN ,  Yang YANG ,  Anilkumar RAYAROTH ,  Lu LIU

IPC: H01J37/32

Abstract: Embodiments of the disclosure relate to apparatus and method for tunable a plasma process within a plasma processing chamber. In one embodiment of the disclosure, a heater assembly for a plasma processing chamber is disclosed. The heater assembly includes a resistive heating element, a first lead coupling the resistive heating element to an RF filter and a tunable circuit element operable to adjust an impedance between the resistive heating element and the RF filter. Another embodiment provides a method for controlling a plasma process in a plasma processing chamber by forming a plasma from a process gas present inside the plasma processing chamber and adjusting an impedance between a resistive heating element and an RF filter coupled between the resistive heating element and a power source for the resistive heating element, while the plasma is present in the plasma processing chamber.

公开(公告)号：US20200152423A1

公开(公告)日：2020-05-14

申请号：US16601241

申请日：2019-10-14

Applicant: Applied Materials, Inc.

Inventor： Andrew NGUYEN ,  Michael G. CHAFIN ,  Lu LIU ,  Anilkumar RAYAROTH

IPC: H01J37/32 ,  H03H7/01

Abstract: A radio frequency (RF) filter system for a substrate processing chamber comprises a first RF filter coupled to a first element of the processing chamber and a second RF filter coupled to the first element of the processing chamber. Each of the RF filters comprises a first filter stage configured to reject a first frequency, a second filter stage coupled to the first filter stage and configured to reject a second frequency, and a third filter stage coupled to the second filter stage and configured to reject the first frequency. Further, the first filter stage comprises a first inductor and a first capacitance, the second filter stage comprises a second inductor and a second capacitance, the third filter stage comprises a third inductor and a third capacitance.

公开(公告)号：US20220090686A1

公开(公告)日：2022-03-24

申请号：US17539372

申请日：2021-12-01

Applicant: Applied Materials, Inc.

Inventor： Andrew NGUYEN ,  Yogananda Sarode VISHWANATH ,  Xue CHANG ,  Anilkumar RAYAROTH ,  Chetan NAIK ,  Balachandra Jatak NARAYAN

IPC: F16K1/42 ,  F16K1/36

Abstract: Embodiments of symmetric flow valves for use in a substrate processing chamber are provided herein. In some embodiments, a symmetric flow valve includes a valve body having sidewalls, a bottom plate, and a top plate that together define an interior volume, wherein the top plate includes one or more axisymmetrically disposed openings; a poppet disposed in the interior volume, wherein the poppet includes a central opening and a plurality of portions configured to selectively seal the one or more axisymmetrically disposed openings of the top plate when the symmetric flow valve is in a closed position; and a first actuator coupled to the poppet to position the poppet within the interior volume in at least an open position, where the poppet is spaced apart from the top plate to allow flow through the one or more axisymmetrically disposed openings of the top plate, and the closed position.