SEMICONDUCTOR PLASMA PROCESSING EQUIPMENT WITH WAFER EDGE PLASMA SHEATH TUNING ABILITY

    公开(公告)号:US20200234928A1

    公开(公告)日:2020-07-23

    申请号:US16672294

    申请日:2019-11-01

    Abstract: Embodiments of the disclosure generally include methods and apparatuses that improve the etch rate uniformity across a surface of a substrate by controlling the shape of a plasma sheath formed across a substrate, such as a semiconductor wafer, during plasma processing. Embodiments of the disclosure will include the adjustment of one or more plasma processing variables and/or the adjustment of the configuration of process kit hardware that is in close proximity to a substrate and/or supports the substrate during processing. Furthermore, embodiments of the disclosure will include replacement of only a small number of consumable parts within the process kit hardware while the remaining parts of the process kit hardware are reused for long periods of time without venting the process chamber. The replacement of the consumable parts can be completed using an automated method of swapping used parts without venting process chamber.

    SYMMETRIC FLOW VALVE FOR FLOW CONDUCTANCE CONTROL

    公开(公告)号:US20220090686A1

    公开(公告)日:2022-03-24

    申请号:US17539372

    申请日:2021-12-01

    Abstract: Embodiments of symmetric flow valves for use in a substrate processing chamber are provided herein. In some embodiments, a symmetric flow valve includes a valve body having sidewalls, a bottom plate, and a top plate that together define an interior volume, wherein the top plate includes one or more axisymmetrically disposed openings; a poppet disposed in the interior volume, wherein the poppet includes a central opening and a plurality of portions configured to selectively seal the one or more axisymmetrically disposed openings of the top plate when the symmetric flow valve is in a closed position; and a first actuator coupled to the poppet to position the poppet within the interior volume in at least an open position, where the poppet is spaced apart from the top plate to allow flow through the one or more axisymmetrically disposed openings of the top plate, and the closed position.

    METAL OXIDE PRECLEAN CHAMBER WITH IMPROVED SELECTIVITY AND FLOW CONDUCTANCE

    公开(公告)号:US20210343508A1

    公开(公告)日:2021-11-04

    申请号:US16863541

    申请日:2020-04-30

    Abstract: Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit for use in a process chamber includes: a chamber liner having a tubular body with an upper portion and a lower portion; a confinement plate coupled to the lower portion of the chamber liner and extending radially inward from the chamber liner, wherein the confinement plate includes a plurality of slots; a shield ring disposed within the chamber liner and movable between the upper portion of the chamber liner and the lower portion of the chamber liner; and a plurality of ground straps coupled to the shield ring at a first end of each ground strap of the plurality of ground straps and to the confinement plate at a second end of each ground strap to maintain electrical connection between the shield ring and the chamber liner when the shield ring moves.

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