公开(公告)号：US06608056B1

公开(公告)日：2003-08-19

申请号：US10243416

申请日：2002-09-13

申请人： Masahiko Hayakawa ,  Hiroyuki Kaizawa ,  Hiroyuki Moritomo ,  Ken-Ichi Kawaguchi ,  Tomonobu Koizumi ,  Mayumi Yamano ,  Koyo Matsuda ,  Minoru Okada ,  Mitsuaki Ohta

发明人： Masahiko Hayakawa ,  Hiroyuki Kaizawa ,  Hiroyuki Moritomo ,  Ken-Ichi Kawaguchi ,  Tomonobu Koizumi ,  Mayumi Yamano ,  Koyo Matsuda ,  Minoru Okada ,  Mitsuaki Ohta

IPC分类号： C07D48704

CPC分类号： C07D471/04 ,  A61K31/00 ,  A61K31/517 ,  A61K31/519 ,  A61K31/5377 ,  C07D471/14 ,  C07D491/04 ,  C07D491/14 ,  C07D495/04 ,  C07D495/14

摘要： The present invention provides a pharmaceutical composition which is useful as a phosphatidylinositol 3 kinase (PI3K) inhibitor and an antitumor agent, and it provides a novel bicyclic or tricyclic fused heteroaryl derivative or a salt thereof which possesses an excellent PI3K inhibiting activity and cancer cell growth inhibiting activity.

公开(公告)号：US06504174B1

公开(公告)日：2003-01-07

申请号：US09536801

申请日：2000-03-28

申请人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame ,  Hisashi Ohtani ,  Toshiji Hamatani

发明人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame ,  Hisashi Ohtani ,  Toshiji Hamatani

IPC分类号： H01L31036

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/28158 ,  H01L21/3221 ,  H01L21/3226 ,  H01L27/12 ,  H01L27/1203 ,  H01L27/1277 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78675

摘要： A novel and very useful method for forming a crystal silicon film by introducing a metal element which promotes crystallization of silicon to an amorphous silicon film and for eliminating or reducing the metal element existing within the crystal silicon film thus obtained is provided. The method for fabricating a semiconductor device comprises steps of intentionally introducing the metal element which promotes crystallization of silicon to the amorphous silicon film and crystallizing the amorphous silicon film by a first heat treatment to obtain the crystal silicon film; eliminating or reducing the metal element existing within the crystal silicon film by implementing a second heat treatment within an oxidizing atmosphere; eliminating a thermal oxide film formed in the previous step; and forming another thermal oxide film on the surface of the region from which the thermal oxide film has been eliminated by implementing another thermal oxidation.

公开(公告)号：US06478263B1

公开(公告)日：2002-11-12

申请号：US09428471

申请日：1999-10-28

申请人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame ,  Hisashi Ohtani ,  Toshiji Hamatani

发明人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame ,  Hisashi Ohtani ,  Toshiji Hamatani

IPC分类号： H01L2904

CPC分类号： H01L21/02672 ,  H01L21/2022 ,  H01L21/28158 ,  H01L21/3221 ,  H01L21/3226 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78675

摘要： Nickel is selectively held in contact with a particular region of an amorphous silicon film. Crystal growth parallel with a substrate is effected by performing a heat treatment. A thermal oxidation film is formed on the silicon film by performing a heat treatment in an oxidizing atmosphere containing a halogen element. During this step, in the silicon film, impurities included such as oxygen or chlorine, are segregated with extending along the crystal growth, the crystallinity is improved, and the gettering of nickel element proceeds. A thin-film transistor is formed so that the direction connecting source and drain regions coincides with the above crystal growth direction. As a result, a TFT having superior characteristics such as a mobility larger than 200 cm2/Vs and an S value smaller than 100 mV/dec. can be obtained.

摘要翻译： 镍选择性地保持与非晶硅膜的特定区域接触。 通过进行热处理来实现与基板平行的晶体生长。 通过在含有卤素元素的氧化气氛中进行热处理，在硅膜上形成热氧化膜。 在该步骤中，在硅膜中，包含的杂质如氧或氯的杂质沿着晶体生长延伸而分离，结晶度提高，并且镍元素的吸杂进行。 形成薄膜晶体管，使得连接源极和漏极区域的方向与上述晶体生长方向一致。 结果，具有诸如迁移率大于200cm2 / Vs和S值小于100mV / dec的优异特性的TFT。 可以获得。

公开(公告)号：US06380558B1

公开(公告)日：2002-04-30

申请号：US09472137

申请日：1999-12-23

申请人： Shunpei Yamazaki ,  Taketomi Asami ,  Toru Takayama ,  Ritsuko Kawasaki ,  Hiroki Adachi ,  Naoya Sakamoto ,  Masahiko Hayakawa ,  Hiroshi Shibata ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Taketomi Asami ,  Toru Takayama ,  Ritsuko Kawasaki ,  Hiroki Adachi ,  Naoya Sakamoto ,  Masahiko Hayakawa ,  Hiroshi Shibata ,  Yasuyuki Arai

IPC分类号： H01L2904

CPC分类号： H01L29/7842 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78603 ,  H01L29/78621 ,  H01L29/78627 ,  H01L29/78636 ,  H01L29/78645 ,  H01L2029/7863

摘要： In a semiconductor device including a laminate of a first insulating layer, a crystalline semiconductor layer, and a second insulating layer, characteristics of the device are improved by determining its structure in view of stress balance. In the semiconductor device including an active layer of the crystalline semiconductor layer having tensile stress on a substrate, tensile stress is given to the first insulating layer formed to be in close contact with a surface of the semiconductor layer at a substrate side, and compressive stress is given to the second insulating layer formed to be in close contact with a surface of the semiconductor layer at a side opposite to the substrate side.

摘要翻译： 在包括第一绝缘层，结晶半导体层和第二绝缘层的层叠体的半导体器件中，通过从应力平衡的角度来确定其结构，改善了器件的特性。 在包括在基板上具有拉伸应力的结晶半导体层的有源层的半导体器件中，对形成为与基板侧的半导体层的表面紧密接触的第一绝缘层施加拉伸应力，压缩应力 被赋予形成为与衬底侧相反的一侧与半导体层的表面紧密接触的第二绝缘层。

公开(公告)号：US06184559B2

公开(公告)日：2001-02-06

申请号：US08970542

申请日：1997-11-14

申请人： Masahiko Hayakawa ,  Yosuke Tsukamoto

发明人： Masahiko Hayakawa ,  Yosuke Tsukamoto

IPC分类号： H01L2976

CPC分类号： H01L29/78696 ,  G02F1/1368 ,  H01L27/12 ,  H01L29/42384

摘要： In a thin-film transistor of multi-gate structure, the width of a channel forming region 108 closest to a drain region 102 is made the narrowest. This prevents a transistor structure closest to the drain region from first deteriorating. Further, the channel length at the vicinity of a center of an active layer is intentionally widened, so that the amount of current flowing through the vicinity of the center of the active layer is decreased and the deteriorating phenomenon due to heat accumulation is prevented. Therefore, a semiconductor device with a high reliability is realized.

摘要翻译： 在多栅极结构的薄膜晶体管中，最靠近漏区102的沟道形成区域108的宽度最窄。 这防止最靠近漏区的晶体管结构首先劣化。 此外，有源层中心附近的沟道长度被有意地加宽，从而流过活性层中心附近的电流量减少，并且防止了由于热积聚引起的劣化现象。 因此，实现了具有高可靠性的半导体器件。

公开(公告)号：US06174896B1

公开(公告)日：2001-01-16

申请号：US09312392

申请日：1999-05-14

申请人： Makoto Takeuchi ,  Ryo Naito ,  Masahiko Hayakawa ,  Yoshinori Okamoto ,  Yasuhiro Yonetoku ,  Ken Ikeda ,  Yasuo Isomura

发明人： Makoto Takeuchi ,  Ryo Naito ,  Masahiko Hayakawa ,  Yoshinori Okamoto ,  Yasuhiro Yonetoku ,  Ken Ikeda ,  Yasuo Isomura

IPC分类号： A61K31439

CPC分类号： C07D221/12 ,  C07D453/02 ,  C09K19/3444

摘要： Quinuclidine derivatives represented by general following general formula (I), salts, N-oxides or quaternary ammonium salts thereof, and medicinal compositions containing the same. The compound has an antagonistic effect on muscarinic M3 receptors and is useful as a preventive or remedy for urologic diseases, respiratory diseases or digestive diseases.

摘要翻译： 由通式（I）表示的喹喔啉衍生物，其盐，N-氧化物或季铵盐，以及含有它们的药物组合物。该化合物对毒蕈碱M3受体具有拮抗作用，可用作泌尿系统的预防或治疗 疾病，呼吸系统疾病或消化系统疾病。

公开(公告)号：US6048884A

公开(公告)日：2000-04-11

申请号：US297762

申请日：1999-05-07

申请人： Tatsuya Maruyama ,  Kenichi Onda ,  Masahiko Hayakawa ,  Takumi Takahashi ,  Takayuki Suzuki ,  Tetsuo Matsui

发明人： Tatsuya Maruyama ,  Kenichi Onda ,  Masahiko Hayakawa ,  Takumi Takahashi ,  Takayuki Suzuki ,  Tetsuo Matsui

IPC分类号： A61K31/41 ,  A61K31/415 ,  A61K31/425 ,  A61P3/10 ,  A61P5/50 ,  C07C217/16 ,  C07C271/16 ,  C07C271/20 ,  C07D233/54 ,  C07D233/61 ,  C07D233/64 ,  C07D235/16 ,  C07D249/08 ,  C07D249/12 ,  C07D257/04 ,  C07D277/30 ,  C07D277/38 ,  C07D277/40 ,  C07D277/42 ,  C07D277/46 ,  C07D285/12 ,  C07D471/04 ,  A61K31/426 ,  A61K31/4436

CPC分类号： C07D233/64 ,  C07C217/16 ,  C07C271/16 ,  C07C271/20 ,  C07D235/16 ,  C07D249/12 ,  C07D277/30 ,  C07D277/40 ,  C07D277/42 ,  C07D285/12 ,  C07D471/04

摘要： An amide derivative represented by the following general formula (I) or a salt thereof and a pharmaceutical composition containing the amide derivative and a pharmaceutically acceptable vehicle. ##STR1## (The symbols in the formula have the following meanings. (whereinA: heteroarylene;X: bond, O, S, --NR.sup.5 --, --NR.sup.5 CO--, --NR.sup.5 CONH--, --NR.sup.5 SO.sub.2 -- or --NR.sup.5 C(.dbd.NH)NH--;R.sup.1 : --H, -optionally substituted lower alkyl, -optionally substituted aryl, -optionally substituted heteroaryl or -optionally substituted cycloalkyl;R.sup.2a, R.sup.2b : --H or -lower alkyl, which may be the same or different;R.sup.3 : --H or -lower alkyl;R.sup.4a, R.sup.4b : --H or --OH, which may be the same different, or R.sup.4a and R.sup.4b are taken together to form .dbd.O or .dbd.N.about.O-lower alkyl; andR.sup.5 : --H or -lower alkyl.)

摘要翻译： PCT No.PCT / JP98 / 00237 Sec。 371日期1999年5月7日 102（e）日期1999年5月7日PCT提交1998年1月22日PCT公布。 第WO98 / 32742号公报 日期：1998年7月30日由以下通式（I）表示的酰胺衍生物或其盐和含有酰胺衍生物和药学上可接受的载体的药物组合物。 （其中A：亚杂芳基; X：键，O，S，-NR5-，-NR5CO-，-NR5CONH-，-NR5SO2-或-NR5C（= NH）NH-; R 1：-H， - 取代的低级烷基， - 取代的芳基， - 被取代的杂芳基或 - 取代的环烷基; R 2a，R 2b：-H或 - 低级烷基，其可以相同或不同; R 3：-H或 - 低级烷基; R4a，R4b：-H或-OH，其可以相同，或者R4a和R4b一起形成= O或= N差异O-低级烷基;以及R5：-H或 - 低级烷基 。

公开(公告)号：US5888858A

公开(公告)日：1999-03-30

申请号：US784291

申请日：1997-01-16

申请人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame

发明人： Shunpei Yamazaki ,  Satoshi Teramoto ,  Jun Koyama ,  Yasushi Ogata ,  Masahiko Hayakawa ,  Mitsuaki Osame

IPC分类号： H01L21/20 ,  H01L21/322 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/49 ,  H01L29/786 ,  H01L21/00 ,  H01L21/326

CPC分类号： H01L29/66757 ,  H01L21/2022 ,  H01L21/3221 ,  H01L21/3226 ,  H01L27/12 ,  H01L27/1203 ,  H01L27/1277 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78675 ,  H01L29/4908

摘要： Concentration of metal element which promotes crystallization of silicon and which exists within a crystal silicon film obtained by utilizing the metal element is reduced. A first heat treatment for crystallization is implemented after introducing nickel to an amorphous silicon film. Then, after obtaining the crystal silicon film, another heat treatment is implemented within an oxidizing atmosphere at a temperature higher than that of the previous heat treatment. A thermal oxide film is formed in this step. At this time, gettering of the nickel element into the thermal oxide film takes place. Then, the thermal oxide film is removed. Thereby, a crystal silicon film having low concentration of the metal element and a high crystalinity can be obtained.

公开(公告)号：US09799298B2

公开(公告)日：2017-10-24

申请号：US13092191

申请日：2011-04-22

申请人： Masahiko Hayakawa ,  Shinya Okano

发明人： Masahiko Hayakawa ,  Shinya Okano

IPC分类号： G09G3/36

CPC分类号： G09G3/3696 ,  G09G2330/021

摘要： A display device in which power consumed in an image holding period is suppressed. The display device includes a liquid crystal display panel which is driven by power supplied from a converter or a backup circuit. A fixed potential may be supplied and a capacitor may be charged with the use of the converter in a writing operation where a load is large, and the fixed potential may be preferentially supplied from the capacitor without using the converter in an image holding period when the load is small.

公开(公告)号：US08947406B2

公开(公告)日：2015-02-03

申请号：US13008233

申请日：2011-01-18

申请人： Kenichi Wakimoto ,  Masahiko Hayakawa

发明人： Kenichi Wakimoto ,  Masahiko Hayakawa

IPC分类号： G09G5/00 ,  G09G3/36

CPC分类号： G09G3/3648 ,  G09G3/3655 ,  G09G2320/10 ,  G09G2330/021 ,  G09G2340/02 ,  G09G2340/0435

摘要： A display method suitable for an image provided by a digital data file and/or a display method of a display device in which the image quality and power consumption are adjusted in accordance with the state of the display device or at user's request to display an image. The image is displayed on the display device in which a plurality of pixels having a pixel electrode connected to a switching element whose off-state current is reduced, using the image provided by the digital data file and data which is provided by the digital data file and is correlated to an operation of the display device.

摘要翻译： 适用于由数字数据文件提供的图像和/或显示装置的显示方法的显示方法，其中根据显示装置的状态或用户显示图像的请求来调整图像质量和功耗 。 使用由数字数据文件提供的图像和由数字数据文件提供的数据，在显示装置上显示图像，其中具有连接到关闭状态电流的开关元件的像素电极的多个像素 并且与显示装置的操作相关。