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    Magnetic memory devices and methods of writing data to the same
    51.
    发明授权
    Magnetic memory devices and methods of writing data to the same 有权
    磁存储器件和数据写入方法

    公开(公告)号：US09236105B2

    公开(公告)日：2016-01-12

    申请号：US14184043

    申请日：2014-02-19

    Applicant: Ung-hwan Pi ,  Kwang-seok Kim ,  Kee-won Kim ,  Sung-chul Lee ,  Young-man Jang

    Inventor： Ung-hwan Pi ,  Kwang-seok Kim ,  Kee-won Kim ,  Sung-chul Lee ,  Young-man Jang

    IPC: G11C11/00 ,  G11C11/16 ,  G11C11/18

    CPC classification number: G11C11/1675 ,  G11C11/16 ,  G11C11/161 ,  G11C11/18

    Abstract: Magnetic memory devices include a magnetoresistive cell including a free layer having a variable magnetization direction and a pinned layer having a fixed magnetization direction, a bit line on the magnetoresistive cell and including a spin Hall effect material layer exhibiting a spin Hall effect and contacting the free layer; and a lower electrode under the magnetoresistive cell. A voltage is applied between the bit line and the lower electrode so that current passes through the magnetoresistive cell.

    Abstract translation: 磁存储器件包括磁阻单元，其包括具有可变磁化方向的自由层和具有固定磁化方向的固定层，磁阻单元上的位线，并且包括具有旋转霍尔效应的旋转霍尔效应材料层， 层; 和位于磁阻电池下方的下电极。 在位线和下电极之间施加电压，使得电流通过磁阻电池。

    Data sensing circuit and memory device including the same
    52.
    发明授权
    Data sensing circuit and memory device including the same 有权
    数据检测电路和包含其的存储器件

    公开(公告)号：US08830768B2

    公开(公告)日：2014-09-09

    申请号：US13605818

    申请日：2012-09-06

    Applicant: Kwang-Seok Kim

    Inventor： Kwang-Seok Kim

    IPC: G11C7/06

    CPC classification number: G11C7/02 ,  G11C11/4091 ,  G11C11/4094

    Abstract: A data sensing circuit includes: a current source configured to supply a reference current to an output line; a switching precharging unit configured to couple an input line with the output line during a precharge operation of the input line; and a current sinking unit configured to sink a current from the output line in response to a voltage level of the input line.

    Abstract translation: 数据感测电路包括：被配置为向输出线提供参考电流的电流源; 开关预充电单元，被配置为在输入线的预充电操作期间将输入线耦合到输出线; 以及电流吸收单元，被配置为响应于输入线的电压电平从输出线吸收电流。

    Data storage device having magnetic domain wall motion and method of forming the same
    53.
    发明授权
    Data storage device having magnetic domain wall motion and method of forming the same 失效
    具有磁畴壁运动的数据存储装置及其形成方法

    公开(公告)号：US08559279B2

    公开(公告)日：2013-10-15

    申请号：US11984478

    申请日：2007-11-19

    Applicant: Sung-chul Lee ,  Sung-hoon Choa ,  Kwang-seok Kim

    Inventor： Sung-chul Lee ,  Sung-hoon Choa ,  Kwang-seok Kim

    IPC: G11B11/00

    CPC classification number: G11C11/15 ,  G11C19/0841

    Abstract: A data storage device using magnetic domain wall motion may include a first magnetic layer having a plurality of magnetic domains. A second magnetic layer may be connected to the first magnetic layer, and a connection layer may be disposed between the first and second magnetic layers. A resistive magnetic layer may be disposed between each of the first and second magnetic layers and the connection layer. Accordingly, when current is supplied to the data storage device to move a magnetic domain wall, the leakage of current in a connection between the magnetic layers may be reduced or prevented, thus conserving power.

    Abstract translation: 使用磁畴壁运动的数据存储装置可以包括具有多个磁畴的第一磁性层。 第二磁性层可以连接到第一磁性层，并且连接层可以设置在第一和第二磁性层之间。 电阻性磁性层可以设置在第一和第二磁性层和连接层中的每一个之间。 因此，当向数据存储装置提供电流以移动磁畴壁时，可以减少或防止磁层之间的连接中的电流泄漏，从而节省功率。

    TEMPERATURE SENSING CIRCUIT
    57.
    发明申请
    TEMPERATURE SENSING CIRCUIT 有权
    温度感应电路

    公开(公告)号：US20120189033A1

    公开(公告)日：2012-07-26

    申请号：US13334314

    申请日：2011-12-22

    Applicant: Kwang-Seok KIM ,  Seong-Ook Jung ,  Seung-Han Woo ,  Kyung-Ho Ryu ,  Dong-Hoon Jung

    Inventor： Kwang-Seok KIM ,  Seong-Ook Jung ,  Seung-Han Woo ,  Kyung-Ho Ryu ,  Dong-Hoon Jung

    IPC: G01K7/00

    CPC classification number: G01K7/346

    Abstract: A temperature sensing circuit includes a signal generation unit including a delay line and generating a source signal with a pulse width corresponding to a delay value of the delay line, a pulse width expansion unit configured to generate a comparison signal by expanding a pulse width of the source signal, and a change detection unit configured to sense a temperature change using a difference between the pulse widths of the comparison signal and a reference signal.

    Abstract translation: 温度检测电路包括：信号生成单元，包括延迟线，并产生具有与延迟线的延迟值相对应的脉冲宽度的源极信号;脉冲宽度扩展单元，被配置为通过扩展所述延迟线的脉冲宽度来生成比较信号 源信号，以及变更检测单元，被配置为使用比较信号的脉冲宽度与参考信号之间的差来感测温度变化。

    Oscillators And Methods Of Manufacturing And Operating The Same
    58.
    发明申请
    Oscillators And Methods Of Manufacturing And Operating The Same 有权
    振荡器和制造和操作方法相同

    公开(公告)号：US20120126904A1

    公开(公告)日：2012-05-24

    申请号：US13208061

    申请日：2011-08-11

    Applicant: Sung-chul Lee ,  Ung-hwan Pi ,  Kee-won Kim ,  Kwang-seok Kim

    Inventor： Sung-chul Lee ,  Ung-hwan Pi ,  Kee-won Kim ,  Kwang-seok Kim

    IPC: H03K3/03 ,  B32B38/08 ,  H03B1/00 ,  B05D5/12

    CPC classification number: H03B15/006 ,  H01L27/22

    Abstract: Oscillators and methods of manufacturing and operating an oscillator are provided, the oscillators include a base free layer having a variable magnetization direction, and at least one oscillation unit on the base free layer. The oscillation unit may include a free layer element contacting the base free layer and having a width less than a width of the base free layer, a pinned layer element separated from the free layer element, and a separation layer element between the free layer element and the pinned layer element. A plurality of oscillation units may be arranged on the base free layer.

    Abstract translation: 提供振荡器和制造和操作振荡器的方法，所述振荡器包括具有可变磁化方向的基底自由层和在所述基底自由层上的至少一个振荡单元。 振荡单元可以包括与基底自由层接触并具有小于基底自由层的宽度的自由层元件，与自由层元件分离的钉扎层元件，以及在自由层元件和 固定层元素。 多个振荡单元可以布置在基底自由层上。

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