公开(公告)号：US20090251452A1

公开(公告)日：2009-10-08

申请号：US12385307

申请日：2009-04-03

申请人： Ki-Nyeng Kang ,  Jae-Kyeong Jeong

发明人： Ki-Nyeng Kang ,  Jae-Kyeong Jeong

IPC分类号： G09G3/32 ,  G06F3/038

CPC分类号： G09G3/3233 ,  G09G2300/0465 ,  G09G2300/0842 ,  G09G2310/0251 ,  G09G2310/0262 ,  G09G2320/043

摘要： An organic light emitting display apparatus capable of preventing degradation of a driving transistor includes a third transistor in the pixel circuit with the third transistor removing a voltage stress applied to a gate electrode of the driving transistor by applying a ground voltage to the gate electrode of the first transistor according to a second scan signal. The third transistor is different from the driving transistor and the switching transistor. A method of driving the organic light emitting display apparatus is also provided.

摘要翻译： 能够防止驱动晶体管劣化的有机发光显示装置包括像素电路中的第三晶体管，其中第三晶体管通过向栅极电极施加接地电压来消除施加到驱动晶体管的栅电极的电压应力 第一晶体管根据第二扫描信号。 第三晶体管与驱动晶体管和开关晶体管不同。 还提供了一种驱动有机发光显示装置的方法。

公开(公告)号：US20090159879A1

公开(公告)日：2009-06-25

申请号：US12318212

申请日：2008-12-23

申请人： Jae-Kyeong Jeong ,  Hyun-Soo Shin ,  Yeon-Gon Mo ,  Jong-Han Jeong

发明人： Jae-Kyeong Jeong ,  Hyun-Soo Shin ,  Yeon-Gon Mo ,  Jong-Han Jeong

IPC分类号： H01L33/00 ,  H01L21/336

CPC分类号： H01L29/7869 ,  H01L27/1225

摘要： A TFT includes a substrate, a transparent semiconductor layer on the substrate, the transparent semiconductor layer including zinc oxide and exhibiting a surface roughness of about 1.3 nm or less, a gate electrode on the transparent semiconductor layer, a gate insulating layer between the gate electrode and the transparent semiconductor layer, the gate insulting layer insulating the gate electrode from the transparent semiconductor layer, and source and drain electrodes on the substrate, the source and drain electrodes being in contact with the transparent semiconductor layer.

摘要翻译： TFT包括基板，在基板上的透明半导体层，包含氧化锌的表面粗糙度为1.3nm以下的透明半导体层，透明半导体层上的栅极电极，栅电极之间的栅极绝缘层 并且所述透明半导体层，所述栅极绝缘层将所述栅电极与所述透明半导体层绝缘，以及所述基板上的源极和漏极，所述源极和漏极与所述透明半导体层接触。

公开(公告)号：US07551255B2

公开(公告)日：2009-06-23

申请号：US11486595

申请日：2006-07-13

申请人： Jae Kyeong Jeong ,  Jae Bon Koo ,  Hyun Soo Shin ,  Yeon Gon Mo ,  Jong Han Jeong ,  Hun Jung Lee ,  Sung Jin Kim

发明人： Jae Kyeong Jeong ,  Jae Bon Koo ,  Hyun Soo Shin ,  Yeon Gon Mo ,  Jong Han Jeong ,  Hun Jung Lee ,  Sung Jin Kim

IPC分类号： G02F1/1343 ,  G02F1/1345 ,  H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC分类号： H01L29/78603 ,  G02F1/13454 ,  H01L27/1214 ,  H01L27/1218 ,  H01L27/3244 ,  H01L2251/5338

摘要： An organic light emitting display device including a flexible substrate and a plurality of thin film transistors (TFTs) formed on the substrate. The plurality of TFTs formed on the substrate include a pixel transistor for driving a pixel and a driver circuit transistor for driving a driver circuit, and a longitudinal direction of a channel region of the pixel transistor makes a first predetermined angle with a direction in which the substrate is bent. As such, it is possible to minimize a change in the electrical property of the TFTs formed on the flexible substrate and to thus reduce a change in the amount of current that flows in the channels of the TFTs.

摘要翻译： 一种有机发光显示装置，包括形成在基板上的柔性基板和多个薄膜晶体管（TFT）。 形成在基板上的多个TFT包括用于驱动像素的像素晶体管和用于驱动驱动电路的驱动电路晶体管，像素晶体管的沟道区的纵向方向与第 基板弯曲。 因此，可以使形成在柔性基板上的TFT的电性能的变化最小化，从而减小在TFT的沟道中流动的电流量的变化。

公开(公告)号：US20080224133A1

公开(公告)日：2008-09-18

申请号：US12076216

申请日：2008-03-14

申请人： Jin-seong Park ,  Yeon-gon Mo ,  Jae-kyeong Jeong ,  Jong-han Jeong ,  Hyun-soo Shin ,  Hun-jung Lee

发明人： Jin-seong Park ,  Yeon-gon Mo ,  Jae-kyeong Jeong ,  Jong-han Jeong ,  Hyun-soo Shin ,  Hun-jung Lee

IPC分类号： H01L29/22 ,  H01L21/34

CPC分类号： H01L21/02579 ,  H01L21/02554 ,  H01L21/0262 ,  H01L27/3244 ,  H01L29/7869

摘要： Disclosed is a thin film transistor including a P-type semiconductor layer, and an organic light-emitting display device having the thin film transistor. The present invention provides a thin film transistor including a substrate, a semiconductor layer, and a gate electrode and a source/drain electrode formed on the substrate, wherein the semiconductor layer is composed of P-type ZnO:N layers through a reaction of a mono-nitrogen gas with a zinc precursor, and the ZnO:N layer includes an un-reacted impurity element at a content of 3 at % or less.

摘要翻译： 公开了一种包括P型半导体层的薄膜晶体管和具有该薄膜晶体管的有机发光显示装置。 本发明提供了一种薄膜晶体管，其包括基板，半导体层以及形成在基板上的栅电极和源/漏电极，其中半导体层由P型ZnO：N层构成，通过 具有锌前体的单氮气，ZnO：N层包含3原子％以下的未反应的杂质元素。

公开(公告)号：US09240487B2

公开(公告)日：2016-01-19

申请号：US12266797

申请日：2008-11-07

申请人： Hun-Jung Lee ,  Jae-Kyeong Jeong ,  Hyun-Soo Shin ,  Jong-Han Jeong ,  Jin-Seong Park ,  Steve Y. G. Mo

发明人： Hun-Jung Lee ,  Jae-Kyeong Jeong ,  Hyun-Soo Shin ,  Jong-Han Jeong ,  Jin-Seong Park ,  Steve Y. G. Mo

IPC分类号： H01L21/00 ,  H01L29/786 ,  H01L29/49 ,  H01L27/12 ,  H01L29/417 ,  H01L27/32 ,  H01L21/02

CPC分类号： H01L29/7869 ,  H01L21/02565 ,  H01L27/1222 ,  H01L27/1251 ,  H01L27/3244 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/4908 ,  H01L29/786 ,  H01L29/78618

摘要： A method of manufacturing a thin film transistor having a compound semiconductor with oxygen as a semiconductor layer and a method of manufacturing an organic light emitting display having the thin film transistor include: forming a gate electrode on an insulating substrate; forming a gate insulating layer on the gate electrode; forming a semiconductor layer including oxygen ions on the gate insulating layer, and including a channel region, a source region, and a drain region; forming a source electrode and a drain electrode to contact the semiconductor layer in the source region and the drain region, respectively; and forming a passivation layer on the semiconductor layer by coating an organic material, wherein a carrier density of the semiconductor layer is maintained in the range of 1E+17 to 1E+18/cm3 to have stable electrical property.

摘要翻译： 制造具有氧作为半导体层的化合物半导体的薄膜晶体管的制造方法以及具有薄膜晶体管的有机发光显示器的制造方法包括：在绝缘基板上形成栅电极; 在栅电极上形成栅极绝缘层; 在所述栅绝缘层上形成包括氧离子的半导体层，并且包括沟道区，源极区和漏极区; 形成源电极和漏电极，分别与源极区域和漏极区域中的半导体层接触; 以及通过涂覆有机材料在半导体层上形成钝化层，其中半导体层的载流子密度保持在1E + 17至1E + 18 / cm3的范围内以具有稳定的电性能。

公开(公告)号：US08871566B2

公开(公告)日：2014-10-28

申请号：US13289883

申请日：2011-11-04

申请人： Hyun-soo Shin ,  Yeon-gon Mo ,  Jae-kyeong Jeong ,  Jin-seong Park ,  Hun-jung Lee ,  Jong-han Jeong

发明人： Hyun-soo Shin ,  Yeon-gon Mo ,  Jae-kyeong Jeong ,  Jin-seong Park ,  Hun-jung Lee ,  Jong-han Jeong

IPC分类号： H01L21/336 ,  G02F1/1368 ,  H01L29/66 ,  H01L29/786 ,  H01L27/12

CPC分类号： H01L29/78606 ,  G02F1/1368 ,  G02F2201/501 ,  G02F2202/10 ,  H01L27/12 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

摘要： A thin film transistor includes a gate electrode, a first insulating layer on the gate electrode, a semiconductor layer on the gate electrode and separated from the gate electrode by the first insulating layer, the semiconductor layer including a channel region corresponding to the gate electrode, a source region, and a drain region, a hydrogen diffusion barrier layer on the semiconductor layer, the hydrogen diffusion barrier layer covering the channel region and exposing the source and drain regions, and a second insulation layer on the source and drain regions and on the hydrogen diffusion barrier layer, such that the hydrogen diffusion barrier layer is between the second insulation layer and the channel region.

摘要翻译： 薄膜晶体管包括栅电极，栅电极上的第一绝缘层，栅电极上的半导体层，并通过第一绝缘层与栅电极分离，半导体层包括与栅电极相对应的沟道区， 源极区域和漏极区域，在半导体层上的氢扩散阻挡层，覆盖沟道区域的氢扩散阻挡层和暴露源极和漏极区域，以及在源极和漏极区域上以及在源极区域和漏极区域上的第二绝缘层 氢扩散阻挡层，使得氢扩散阻挡层位于第二绝缘层和沟道区之间。

公开(公告)号：US08698215B2

公开(公告)日：2014-04-15

申请号：US11763373

申请日：2007-06-14

申请人： Jae-Kyeong Jeong ,  Hyun-Soo Shin ,  Yeon-Gon Mo

发明人： Jae-Kyeong Jeong ,  Hyun-Soo Shin ,  Yeon-Gon Mo

IPC分类号： H01L29/76

CPC分类号： H01L27/127 ,  H01L27/1218 ,  H01L27/1225 ,  H01L29/7869

摘要： A thin film transistor (TFT) and a method of manufacturing the same such that an ohmic contact can be formed between a semiconductor layer and a source electrode or between the semiconductor layer and a drain electrode, wherein the TFT can be applied to a plastic substrate. The TFT includes: a substrate; an active layer formed of ZnO, InZnO, ZnSnO, and/or ZnInGaO on the substrate and including a channel region, a source region, and a drain region; a gate electrode insulated from the active layer; and source and drain electrodes insulated from the gate electrode and electrically connected to the source region and the drain region, respectively, wherein the source region and the drain region of the active layer include hydrogen.

摘要翻译： 薄膜晶体管（TFT）及其制造方法可以在半导体层和源电极之间或半导体层与漏电极之间形成欧姆接触，其中TFT可以应用于塑料基板 。 TFT包括：基板; 在衬底上由ZnO，InZnO，ZnSnO和/或ZnInGaO形成的有源层，包括沟道区，源极区和漏极区; 与有源层绝缘的栅电极; 以及与栅电极绝缘并分别电连接到源极区和漏极区的源极和漏极，其中有源层的源极区和漏极区包括氢。

公开(公告)号：US20130277660A1

公开(公告)日：2013-10-24

申请号：US13922785

申请日：2013-06-20

申请人： Jin-Seong Park ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong ,  Min-Kyu Kim ,  Hyun-Joong Chung ,  Tae-Kyung Ahn ,  Eun-Hyun Kim

发明人： Jin-Seong Park ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong ,  Min-Kyu Kim ,  Hyun-Joong Chung ,  Tae-Kyung Ahn ,  Eun-Hyun Kim

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/45

摘要： An oxide semiconductor thin film transistor and a flat panel display device incorporating the same oxide semiconductor thin film transistor. The thin film transistor includes a gate electrode formed on the substrate, a gate insulating layer formed on the substrate and covering the gate electrode, an oxide semiconductor layer formed on the gate insulating layer and covering the gate electrode, a titanium layer formed in a source region and a drain region of the oxide semiconductor layer, and source and drain electrodes respectively coupled to the source region and the drain region through the titanium layer and made of copper. The titanium layer reduces the contact resistance between the source and drain electrodes made of copper and the oxide semiconductor layer, forms a stable interface junction therebetween, and blocks a diffusion of copper.

摘要翻译： 一种氧化物半导体薄膜晶体管和包含相同氧化物半导体薄膜晶体管的平板显示装置。 薄膜晶体管包括形成在基板上的栅电极，形成在基板上并覆盖栅电极的栅极绝缘层，形成在栅绝缘层上并覆盖栅电极的氧化物半导体层，形成在源极上的钛层 区域和漏区，以及分别通过钛层耦合到源极区域和漏极区域并由铜制成的源极和漏极电极。 钛层降低由铜和氧化物半导体层构成的源极和漏极之间的接触电阻，在它们之间形成稳定的界面结，并阻止铜的扩散。

公开(公告)号：US08466465B2

公开(公告)日：2013-06-18

申请号：US12382743

申请日：2009-03-23

申请人： Jong-Han Jeong ,  Tae-Kyung Ahn ,  Jae-Kyeong Jeong ,  Jin-Sung Park ,  Hun-Jung Lee ,  Hyun-Soo Shin ,  Yeon-Gon Mo

发明人： Jong-Han Jeong ,  Tae-Kyung Ahn ,  Jae-Kyeong Jeong ,  Jin-Sung Park ,  Hun-Jung Lee ,  Hyun-Soo Shin ,  Yeon-Gon Mo

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L29/76 ,  H01L31/112 ,  H01L27/108 ,  H01L29/12 ,  H01L29/15

CPC分类号： H01L29/78696 ,  H01L27/1225 ,  H01L29/7869

摘要： Disclosed is a thin film transistor which has an oxide semiconductor as an activation layer, a method of manufacturing the same and a flat panel display device having the same. The thin film transistor includes an oxide semiconductor layer formed on a substrate and including a channel region, a source region and a drain region, a gate electrode insulated from the oxide semiconductor layer by a gate insulating film, and source electrode and drain electrode which are coupled to the source region and the drain region, respectively. The oxide semiconductor layer includes a first layer portion and a second layer portion. The first layer portion has a first thickness and a first carrier concentration, and the second layer portion has a second thickness and a second carrier concentration. The second carrier concentration is lower than the first carrier concentration.

摘要翻译： 公开了具有氧化物半导体作为活化层的薄膜晶体管，其制造方法和具有该活性层的平板显示装置。 薄膜晶体管包括形成在基板上的氧化物半导体层，其包括沟道区域，源极区域和漏极区域，通过栅极绝缘膜与氧化物半导体层绝缘的栅极电极以及源极电极和漏极电极 耦合到源区和漏区。 氧化物半导体层包括第一层部分和第二层部分。 第一层部分具有第一厚度和第一载流子浓度，并且第二层部分具有第二厚度和第二载流子浓度。 第二载流子浓度低于第一载流子浓度。

公开(公告)号：US08436342B2

公开(公告)日：2013-05-07

申请号：US12654938

申请日：2010-01-08

申请人： Jin-Seong Park ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong ,  Min-Kyu Kim ,  Hyun-Joong Chung ,  Tae-Kyung Ahn

发明人： Jin-Seong Park ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong ,  Min-Kyu Kim ,  Hyun-Joong Chung ,  Tae-Kyung Ahn

IPC分类号： H01L51/52 ,  H01L51/56 ,  H01L33/00

CPC分类号： H01L27/3262 ,  H01L2251/305

摘要： Disclosed is an organic light emitting display device and a method of manufacturing the same. The organic light emitting display device includes the thin film transistor of the drive unit that has the activation layer formed in a structure where the first oxide semiconductor layer and the second oxide semiconductor layer are stacked, the thin film transistor of the pixel unit that has the activation layer formed of the second oxide semiconductor layer, and the organic light emitting diode coupled to the thin film transistor of the pixel unit. The thin film transistor of the drive unit has channel formed on the first oxide semiconductor layer having a higher carrier concentration than the second oxide semiconductor layer, having a high charge mobility, and the thin film transistor of the pixel unit has a channel formed on the second oxide semiconductor layer, having a stable and uniform functional property.

摘要翻译： 公开了一种有机发光显示装置及其制造方法。 有机发光显示装置包括具有以第一氧化物半导体层和第二氧化物半导体层堆叠的结构形成的激活层的驱动单元的薄膜晶体管，具有像素单元的薄膜晶体管 由第二氧化物半导体层形成的激活层和耦合到像素单元的薄膜晶体管的有机发光二极管。 驱动单元的薄膜晶体管具有形成在第一氧化物半导体层上的沟道，其具有比第二氧化物半导体层更高的载流子浓度，具有高电荷迁移率，并且像素单元的薄膜晶体管具有形成在 第二氧化物半导体层，具有稳定且均匀的功能特性。