公开(公告)号：US08871566B2

公开(公告)日：2014-10-28

申请号：US13289883

申请日：2011-11-04

申请人： Hyun-soo Shin ,  Yeon-gon Mo ,  Jae-kyeong Jeong ,  Jin-seong Park ,  Hun-jung Lee ,  Jong-han Jeong

发明人： Hyun-soo Shin ,  Yeon-gon Mo ,  Jae-kyeong Jeong ,  Jin-seong Park ,  Hun-jung Lee ,  Jong-han Jeong

IPC分类号： H01L21/336 ,  G02F1/1368 ,  H01L29/66 ,  H01L29/786 ,  H01L27/12

CPC分类号： H01L29/78606 ,  G02F1/1368 ,  G02F2201/501 ,  G02F2202/10 ,  H01L27/12 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/7869

摘要： A thin film transistor includes a gate electrode, a first insulating layer on the gate electrode, a semiconductor layer on the gate electrode and separated from the gate electrode by the first insulating layer, the semiconductor layer including a channel region corresponding to the gate electrode, a source region, and a drain region, a hydrogen diffusion barrier layer on the semiconductor layer, the hydrogen diffusion barrier layer covering the channel region and exposing the source and drain regions, and a second insulation layer on the source and drain regions and on the hydrogen diffusion barrier layer, such that the hydrogen diffusion barrier layer is between the second insulation layer and the channel region.

摘要翻译： 薄膜晶体管包括栅电极，栅电极上的第一绝缘层，栅电极上的半导体层，并通过第一绝缘层与栅电极分离，半导体层包括与栅电极相对应的沟道区， 源极区域和漏极区域，在半导体层上的氢扩散阻挡层，覆盖沟道区域的氢扩散阻挡层和暴露源极和漏极区域，以及在源极和漏极区域上以及在源极区域和漏极区域上的第二绝缘层 氢扩散阻挡层，使得氢扩散阻挡层位于第二绝缘层和沟道区之间。

公开(公告)号：US08698215B2

公开(公告)日：2014-04-15

申请号：US11763373

申请日：2007-06-14

申请人： Jae-Kyeong Jeong ,  Hyun-Soo Shin ,  Yeon-Gon Mo

发明人： Jae-Kyeong Jeong ,  Hyun-Soo Shin ,  Yeon-Gon Mo

IPC分类号： H01L29/76

CPC分类号： H01L27/127 ,  H01L27/1218 ,  H01L27/1225 ,  H01L29/7869

摘要： A thin film transistor (TFT) and a method of manufacturing the same such that an ohmic contact can be formed between a semiconductor layer and a source electrode or between the semiconductor layer and a drain electrode, wherein the TFT can be applied to a plastic substrate. The TFT includes: a substrate; an active layer formed of ZnO, InZnO, ZnSnO, and/or ZnInGaO on the substrate and including a channel region, a source region, and a drain region; a gate electrode insulated from the active layer; and source and drain electrodes insulated from the gate electrode and electrically connected to the source region and the drain region, respectively, wherein the source region and the drain region of the active layer include hydrogen.

摘要翻译： 薄膜晶体管（TFT）及其制造方法可以在半导体层和源电极之间或半导体层与漏电极之间形成欧姆接触，其中TFT可以应用于塑料基板 。 TFT包括：基板; 在衬底上由ZnO，InZnO，ZnSnO和/或ZnInGaO形成的有源层，包括沟道区，源极区和漏极区; 与有源层绝缘的栅电极; 以及与栅电极绝缘并分别电连接到源极区和漏极区的源极和漏极，其中有源层的源极区和漏极区包括氢。

公开(公告)号：US20130277660A1

公开(公告)日：2013-10-24

申请号：US13922785

申请日：2013-06-20

申请人： Jin-Seong Park ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong ,  Min-Kyu Kim ,  Hyun-Joong Chung ,  Tae-Kyung Ahn ,  Eun-Hyun Kim

发明人： Jin-Seong Park ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong ,  Min-Kyu Kim ,  Hyun-Joong Chung ,  Tae-Kyung Ahn ,  Eun-Hyun Kim

IPC分类号： H01L29/786

CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/3262 ,  H01L29/45

摘要： An oxide semiconductor thin film transistor and a flat panel display device incorporating the same oxide semiconductor thin film transistor. The thin film transistor includes a gate electrode formed on the substrate, a gate insulating layer formed on the substrate and covering the gate electrode, an oxide semiconductor layer formed on the gate insulating layer and covering the gate electrode, a titanium layer formed in a source region and a drain region of the oxide semiconductor layer, and source and drain electrodes respectively coupled to the source region and the drain region through the titanium layer and made of copper. The titanium layer reduces the contact resistance between the source and drain electrodes made of copper and the oxide semiconductor layer, forms a stable interface junction therebetween, and blocks a diffusion of copper.

摘要翻译： 一种氧化物半导体薄膜晶体管和包含相同氧化物半导体薄膜晶体管的平板显示装置。 薄膜晶体管包括形成在基板上的栅电极，形成在基板上并覆盖栅电极的栅极绝缘层，形成在栅绝缘层上并覆盖栅电极的氧化物半导体层，形成在源极上的钛层 区域和漏区，以及分别通过钛层耦合到源极区域和漏极区域并由铜制成的源极和漏极电极。 钛层降低由铜和氧化物半导体层构成的源极和漏极之间的接触电阻，在它们之间形成稳定的界面结，并阻止铜的扩散。

公开(公告)号：US08466465B2

公开(公告)日：2013-06-18

申请号：US12382743

申请日：2009-03-23

申请人： Jong-Han Jeong ,  Tae-Kyung Ahn ,  Jae-Kyeong Jeong ,  Jin-Sung Park ,  Hun-Jung Lee ,  Hyun-Soo Shin ,  Yeon-Gon Mo

发明人： Jong-Han Jeong ,  Tae-Kyung Ahn ,  Jae-Kyeong Jeong ,  Jin-Sung Park ,  Hun-Jung Lee ,  Hyun-Soo Shin ,  Yeon-Gon Mo

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L29/76 ,  H01L31/112 ,  H01L27/108 ,  H01L29/12 ,  H01L29/15

CPC分类号： H01L29/78696 ,  H01L27/1225 ,  H01L29/7869

摘要： Disclosed is a thin film transistor which has an oxide semiconductor as an activation layer, a method of manufacturing the same and a flat panel display device having the same. The thin film transistor includes an oxide semiconductor layer formed on a substrate and including a channel region, a source region and a drain region, a gate electrode insulated from the oxide semiconductor layer by a gate insulating film, and source electrode and drain electrode which are coupled to the source region and the drain region, respectively. The oxide semiconductor layer includes a first layer portion and a second layer portion. The first layer portion has a first thickness and a first carrier concentration, and the second layer portion has a second thickness and a second carrier concentration. The second carrier concentration is lower than the first carrier concentration.

摘要翻译： 公开了具有氧化物半导体作为活化层的薄膜晶体管，其制造方法和具有该活性层的平板显示装置。 薄膜晶体管包括形成在基板上的氧化物半导体层，其包括沟道区域，源极区域和漏极区域，通过栅极绝缘膜与氧化物半导体层绝缘的栅极电极以及源极电极和漏极电极 耦合到源区和漏区。 氧化物半导体层包括第一层部分和第二层部分。 第一层部分具有第一厚度和第一载流子浓度，并且第二层部分具有第二厚度和第二载流子浓度。 第二载流子浓度低于第一载流子浓度。

公开(公告)号：US08436342B2

公开(公告)日：2013-05-07

申请号：US12654938

申请日：2010-01-08

申请人： Jin-Seong Park ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong ,  Min-Kyu Kim ,  Hyun-Joong Chung ,  Tae-Kyung Ahn

发明人： Jin-Seong Park ,  Yeon-Gon Mo ,  Jae-Kyeong Jeong ,  Min-Kyu Kim ,  Hyun-Joong Chung ,  Tae-Kyung Ahn

IPC分类号： H01L51/52 ,  H01L51/56 ,  H01L33/00

CPC分类号： H01L27/3262 ,  H01L2251/305

摘要： Disclosed is an organic light emitting display device and a method of manufacturing the same. The organic light emitting display device includes the thin film transistor of the drive unit that has the activation layer formed in a structure where the first oxide semiconductor layer and the second oxide semiconductor layer are stacked, the thin film transistor of the pixel unit that has the activation layer formed of the second oxide semiconductor layer, and the organic light emitting diode coupled to the thin film transistor of the pixel unit. The thin film transistor of the drive unit has channel formed on the first oxide semiconductor layer having a higher carrier concentration than the second oxide semiconductor layer, having a high charge mobility, and the thin film transistor of the pixel unit has a channel formed on the second oxide semiconductor layer, having a stable and uniform functional property.

摘要翻译： 公开了一种有机发光显示装置及其制造方法。 有机发光显示装置包括具有以第一氧化物半导体层和第二氧化物半导体层堆叠的结构形成的激活层的驱动单元的薄膜晶体管，具有像素单元的薄膜晶体管 由第二氧化物半导体层形成的激活层和耦合到像素单元的薄膜晶体管的有机发光二极管。 驱动单元的薄膜晶体管具有形成在第一氧化物半导体层上的沟道，其具有比第二氧化物半导体层更高的载流子浓度，具有高电荷迁移率，并且像素单元的薄膜晶体管具有形成在 第二氧化物半导体层，具有稳定且均匀的功能特性。

公开(公告)号：US08221889B2

公开(公告)日：2012-07-17

申请号：US12379648

申请日：2009-02-26

申请人： Jae-Seob Lee ,  Dong-Un Jin ,  Yeon-Gon Mo ,  Tae-Woong Kim

发明人： Jae-Seob Lee ,  Dong-Un Jin ,  Yeon-Gon Mo ,  Tae-Woong Kim

IPC分类号： B32B15/04 ,  H05H1/24

CPC分类号： H01L29/78603 ,  Y10T428/12431 ,  Y10T428/31678

摘要： A flexible substrate for a TFT includes a metal substrate having a predetermined coefficient of thermal expansion, and a buffer layer on the metal substrate, the buffer layer including a silicon oxide or a silicon nitride, wherein the predetermined coefficient of thermal expansion of the metal substrate satisfies an equation as follows, α f + 0.162 × ( 1 - v f ) E f ≤ α s ≤ α f + 0.889 × ( 1 - v f ) E f Ef representing Young's modulus of the buffer layer, vf representing Poisson's ratio of the buffer layer, αf representing a coefficient of thermal expansion of the buffer layer, and αs representing the predetermined coefficient of thermal expansion of the metal substrate.

摘要翻译： 用于TFT的柔性基板包括具有预定热膨胀系数的金属基板和金属基板上的缓冲层，缓冲层包括氧化硅或氮化硅，其中金属基板的预定热膨胀系数 满足以下等式：αf + 0.162×（1-vf）E f≤αs≤αf + 0.889×（1-vf）E f Ef表示缓冲层的杨氏模量，vf表示缓冲器的泊松比 层，表示缓冲层的热膨胀系数的αf，表示金属基板的规定的热膨胀系数的αs。

公开(公告)号：US20110273419A1

公开(公告)日：2011-11-10

申请号：US12944641

申请日：2010-11-11

申请人： Dong-Wook Park ,  Ki-Ju Im ,  Ki-Wook Kim ,  Yeon-Gon Mo ,  Hui-Won Yang

发明人： Dong-Wook Park ,  Ki-Ju Im ,  Ki-Wook Kim ,  Yeon-Gon Mo ,  Hui-Won Yang

IPC分类号： G09G5/00 ,  G09G3/30

CPC分类号： G09G3/30 ,  G09G3/3233 ,  G09G5/00 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2300/0852 ,  G09G2300/0861 ,  G09G2320/0223 ,  G09G2320/0295 ,  G09G2320/043 ,  G09G2320/048

摘要： A pixel circuit of a flat panel display device and a method for driving thereof are provided. The pixel circuit includes a first transistor having a first gate electrode coupled to a scan line, a second electrode coupled to a data line, a second gate electrode coupled to a controlling signal line, and a first electrode, a second transistor having a first gate electrode coupled to the first electrode of the first transistor, a second electrode coupled to a first voltage source, a second gate electrode coupled to the controlling signal line, and a first electrode, a capacitor coupled between the first gate electrode of the second transistor and the first electrode of the second transistor, and an organic light emitting diode coupled between the first electrode of the second transistor and a second voltage source, in which the threshold voltage of the first and second transistors may be controlled to the required level by supplying a controlling signal of a fixed voltage level to the second gate electrodes of the first and second transistors through the controlling signal line.

摘要翻译： 提供了一种平板显示装置的像素电路及其驱动方法。 像素电路包括第一晶体管，其具有耦合到扫描线的第一栅极电极，耦合到数据线的第二电极，耦合到控制信号线的第二栅电极和第一电极，具有第一栅极的第二晶体管 耦合到第一晶体管的第一电极的第二电极，耦合到第一电压源的第二电极，耦合到控制信号线的第二栅电极，以及耦合在第二晶体管的第一栅电极和第二电极之间的电容器， 第二晶体管的第一电极和耦合在第二晶体管的第一电极和第二电压源之间的有机发光二极管，其中第一和第二晶体管的阈值电压可以通过提供第一电极而被控制到所需的电平 通过控制信号线将固定电压电平的信号控制到第一和第二晶体管的第二栅电极。

公开(公告)号：US07994500B2

公开(公告)日：2011-08-09

申请号：US12424860

申请日：2009-04-16

申请人： Min-Kyu Kim ,  Jong-Han Jeong ,  Tae-Kyung Ahn ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo ,  Jin-Seong Park ,  Hyun-Joong Chung ,  Kwang-Suk Kim ,  Hul-Won Yang

发明人： Min-Kyu Kim ,  Jong-Han Jeong ,  Tae-Kyung Ahn ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo ,  Jin-Seong Park ,  Hyun-Joong Chung ,  Kwang-Suk Kim ,  Hul-Won Yang

IPC分类号： H01L29/22

CPC分类号： H01L29/7869 ,  H01L29/78606

摘要： A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include source and drain electrodes formed on a substrate; an active layer formed of an oxide semiconductor disposed on the source and drain electrodes; a gate electrode; and an interfacial stability layer formed on at least one of top and bottom surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristics as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented.

摘要翻译： 使用氧化物半导体作为有源层的薄膜晶体管（TFT），TFT的制造方法以及具有TFT的平板显示装置包括：形成在基板上的源极和漏极; 由设置在源极和漏极上的氧化物半导体形成的有源层; 栅电极; 以及形成在活性层的顶表面和底表面中的至少一个上的界面稳定层。 在TFT中，界面稳定层由带隙为3.0〜8.0eV的氧化物形成。 由于界面稳定层具有与栅极绝缘层和钝化层相同的特性，因此保持了化学上高的界面稳定性。 由于界面稳定层具有等于或大于有源层的带隙，所以物理地防止电荷俘获。

公开(公告)号：US20110108830A1

公开(公告)日：2011-05-12

申请号：US12826418

申请日：2010-06-29

申请人： Jin-Seong Park ,  Kwang-Suk Kim ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo

发明人： Jin-Seong Park ,  Kwang-Suk Kim ,  Jae-Kyeong Jeong ,  Yeon-Gon Mo

IPC分类号： H01L29/786

CPC分类号： H01L29/7869

摘要： There is provided a thin film transistor exhibiting stable reliability and electrical characteristics by forming an active layer by adding material having a large difference of electronegativity from oxygen like Hf and an atomic radius similar to that of Zn or SN to an oxide semiconductor made of ZnSnO to adjust concentration of carrier and to enhance reliability of the oxide semiconductor, and an organic light emitting display device having the same.

摘要翻译： 提供了一种薄膜晶体管，其表现出稳定的可靠性和电特性，通过添加具有如Hf之类的氧的电负性差大的材料和类似于Zn或SN的原子半径的材料形成有源层到由ZnSnO制成的氧化物半导体， 调整载体的浓度并提高氧化物半导体的可靠性，以及具有该氧化物半导体的有机发光显示装置。

公开(公告)号：US20110095274A1

公开(公告)日：2011-04-28

申请号：US12829139

申请日：2010-07-01

申请人： Hyun-Joong CHUNG ,  Jin-Seong PARK ,  Jong-Han JEONG ,  Jae-Kyeong JEONG ,  Yeon-Gon MO ,  Min-Kyu KIM ,  Tae-Kyung AHN ,  Hui-Won YANG ,  Kwang-Suk KIM ,  Eun-Hyun KIM ,  Jae-Wook KANG ,  Jae-Soon IM

发明人： Hyun-Joong CHUNG ,  Jin-Seong PARK ,  Jong-Han JEONG ,  Jae-Kyeong JEONG ,  Yeon-Gon MO ,  Min-Kyu KIM ,  Tae-Kyung AHN ,  Hui-Won YANG ,  Kwang-Suk KIM ,  Eun-Hyun KIM ,  Jae-Wook KANG ,  Jae-Soon IM

IPC分类号： H01L51/52 ,  H01L51/56 ,  H01L33/00

CPC分类号： H01L27/3248 ,  H01L27/1225 ,  H01L27/3258 ,  H01L27/3262 ,  H01L29/66969 ,  H01L29/7869 ,  H01L51/52 ,  H01L51/5237 ,  H01L51/56 ,  H01L2227/323 ,  H01L2251/5346

摘要： An organic light-emitting display device, which may be configured to prevent moisture or oxygen from penetrating the organic light-emitting display device from the outside is disclosed. An organic light-emitting display device, which is easily applied to a large display device and/or may be easily mass produced is further disclosed. Additionally disclosed is a method of manufacturing an organic light-emitting display device. An organic light-emitting display device may include, for example, a thin-film transistor (TFT) including a gate electrode, an active layer insulated from the gate electrode, source and drain electrodes insulated from the gate electrode and contacting the active layer and an insulating layer disposed between the source and drain electrodes and the active layer; and an organic light-emitting diode electrically connected to the TFT. The insulating layer may include, for example, a first insulating layer contacting the active layer; and a second insulating layer formed of a metal oxide and disposed on the first insulating layer.

摘要翻译： 公开了一种有机发光显示装置，其可被配置为防止水分或氧气从外部穿透有机发光显示装置。 进一步公开了易于应用于大型显示​​装置和/或可容易地批量生产的有机发光显示装置。 另外公开了一种制造有机发光显示装置的方法。 有机发光显示装置可以包括例如薄膜晶体管（TFT），其包括栅电极，与栅电极绝缘的有源层，与栅电极绝缘的源电极和漏电极，并与活性层接触和 设置在所述源极和漏极之间的绝缘层和所述有源层; 以及与TFT电连接的有机发光二极管。 绝缘层可以包括例如与活性层接触的第一绝缘层; 以及由金属氧化物形成并设置在第一绝缘层上的第二绝缘层。