摘要:
A flexible substrate for a TFT includes a metal substrate having a predetermined coefficient of thermal expansion, and a buffer layer on the metal substrate, the buffer layer including a silicon oxide or a silicon nitride, wherein the predetermined coefficient of thermal expansion of the metal substrate satisfies an equation as follows, α f + 0.162 × ( 1 - v f ) E f ≤ α s ≤ α f + 0.889 × ( 1 - v f ) E f Ef representing Young's modulus of the buffer layer, vf representing Poisson's ratio of the buffer layer, αf representing a coefficient of thermal expansion of the buffer layer, and αs representing the predetermined coefficient of thermal expansion of the metal substrate.
摘要:
A flexible substrate for a TFT includes a metal substrate having a predetermined coefficient of thermal expansion, and a buffer layer on the metal substrate, the buffer layer including a silicon oxide or a silicon nitride, wherein the predetermined coefficient of thermal expansion of the metal substrate satisfies an equation as follows, α f + 0.162 × ( 1 - v f ) E f ≤ α s ≤ α f + 0.889 × ( 1 - v f ) E f Ef representing Young's modulus of the buffer layer, vf representing Poisson's ratio of the buffer layer, αf representing a coefficient of thermal expansion of the buffer layer, and αs representing the predetermined coefficient of thermal expansion of the metal substrate.
摘要翻译:用于TFT的柔性基板包括具有预定热膨胀系数的金属基板和金属基板上的缓冲层,缓冲层包括氧化硅或氮化硅,其中金属基板的预定热膨胀系数 满足以下等式:αf + 0.162×(1-vf)E f≤αs≤αf + 0.889×(1-vf)E f Ef表示缓冲层的杨氏模量,vf表示缓冲器的泊松比 层,表示缓冲层的热膨胀系数的αf,表示金属基板的规定的热膨胀系数的αs。
摘要:
A flexible substrate for a TFT includes a metal substrate having a predetermined coefficient of thermal expansion, and a buffer layer on the metal substrate, the buffer layer including a silicon oxide or a silicon nitride, wherein the predetermined coefficient of thermal expansion of the metal substrate satisfies an equation as follows, α f + 0.162 × ( 1 - v f ) E f ≤ α s ≤ α f + 0.889 × ( 1 - v f ) E f Ef representing Young's modulus of the buffer layer, vf representing Poisson's ratio of the buffer layer, αf representing a coefficient of thermal expansion of the buffer layer, and αs representing the predetermined coefficient of thermal expansion of the metal substrate.
摘要:
A method of manufacturing an electronic apparatus including a plastic substrate, which can facilitate in separating the electronic apparatus including the plastic substrate from a stage, an electronic apparatus manufactured using the method, and an apparatus including the stage for use in the method. The method includes: preparing a stage on which a plurality of island-shaped separation lubricators are arranged; disposing the plastic substrate on the stage; forming a device on the plastic substrate; and separating the plastic substrate from the stage.
摘要:
A method of manufacturing an electronic apparatus including a plastic substrate, which can facilitate in separating the electronic apparatus including the plastic substrate from a stage, an electronic apparatus manufactured using the method, and an apparatus including the stage for use in the method. The method includes: preparing a stage on which a plurality of island-shaped separation lubricators are arranged; disposing the plastic substrate on the stage; forming a device on the plastic substrate; and separating the plastic substrate from the stage.
摘要:
A method for manufacturing a flexible display is provided. A sacrificial layer is formed on a substrate support, the sacrificial layer having an absorptivity of 1 E+02 to 1 E+06 cm−1 as a function of the wavelength of a laser. A flexible substrate is formed on the sacrificial layer. A device is formed on the flexible substrate. Laser irradiating is performed on a rear of the substrate support for detaching the sacrificial layer from the flexible substrate.
摘要:
Provided is an organic light emitting display apparatus including a substrate, a thin film transistor disposed on the substrate and including an active layer, a gate electrode, a gate insulator, a source electrode and a drain electrode, a first electrode electrically connected to the source electrode or the drain electrode, a second electrode disposed to face the first electrode, and an intermediate layer including an organic emitting layer and disposed between the first electrode and the second electrode. The gate insulator is disposed to insulate the gate electrode and the active layer and includes a plurality of patterns spaced apart from each other.
摘要:
A method of manufacturing a flexible display apparatus, and more particularly, to a flexible display apparatus including a display unit including a thin-film transistor which is easily encapsulated. The method of manufacturing a flexible display apparatus includes: sequentially forming a first plastic film and a first barrier layer on a first substrate; forming a thin-film transistor on the first barrier layer; forming on the thin-film transistor a display device that is electrically connected to the thin-film transistor; forming an encapsulation member including a second substrate, a second plastic film, and a second barrier layer, wherein the second substrate and the second film are sequentially stacked on the second barrier layer; combining the encapsulation member with the upper portion of the display device; ablating the first substrate from the first plastic film; and ablating the second substrate from the second plastic film.
摘要:
A polymer substrate having a weight loss of less than about 1% based on an initial weight at a temperature ranging from about 420° C. to about 600° C., a method for forming the polymer substrate, a display device including the polymer substrate, and a method for manufacturing the display device. The method for forming the polymer substrate includes preparing the polymer layer and performing an annealing process to the polymer layer at a temperature greater than about 350° C.
摘要:
A method of manufacturing a flexible display apparatus, and more particularly, to a flexible display apparatus including a display unit including a thin-film transistor which is easily encapsulated. The method of manufacturing a flexible display apparatus includes: sequentially forming a first plastic film and a first barrier layer on a first substrate; forming a thin-film transistor on the first barrier layer; forming on the thin-film transistor a display device that is electrically connected to the thin-film transistor; forming an encapsulation member including a second substrate, a second plastic film, and a second barrier layer, wherein the second substrate and the second film are sequentially stacked on the second barrier layer; combining the encapsulation member with the upper portion of the display device; ablating the first substrate from the first plastic film; and ablating the second substrate from the second plastic film.