Flexible substrate, method of fabricating the same, and thin film transistor using the same
    2.
    发明授权
    Flexible substrate, method of fabricating the same, and thin film transistor using the same 有权
    柔性基板及其制造方法以及使用其的薄膜晶体管

    公开(公告)号:US08221889B2

    公开(公告)日:2012-07-17

    申请号:US12379648

    申请日:2009-02-26

    IPC分类号: B32B15/04 H05H1/24

    摘要: A flexible substrate for a TFT includes a metal substrate having a predetermined coefficient of thermal expansion, and a buffer layer on the metal substrate, the buffer layer including a silicon oxide or a silicon nitride, wherein the predetermined coefficient of thermal expansion of the metal substrate satisfies an equation as follows, α f + 0.162 × ( 1 - v f ) E f ≤ α s ≤ α f + 0.889 × ( 1 - v f ) E f Ef representing Young's modulus of the buffer layer, vf representing Poisson's ratio of the buffer layer, αf representing a coefficient of thermal expansion of the buffer layer, and αs representing the predetermined coefficient of thermal expansion of the metal substrate.

    摘要翻译: 用于TFT的柔性基板包括具有预定热膨胀系数的金属基板和金属基板上的缓冲层,缓冲层包括氧化硅或氮化硅,其中金属基板的预定热膨胀系数 满足以下等式:αf + 0.162×(1-vf)E f≤αs≤αf + 0.889×(1-vf)E f Ef表示缓冲层的杨氏模量,vf表示缓冲器的泊松比 层,表示缓冲层的热膨胀系数的αf,表示金属基板的规定的热膨胀系数的αs。

    Flexible substrate, method of fabricating the same, and thin film transistor using the same
    3.
    发明申请
    Flexible substrate, method of fabricating the same, and thin film transistor using the same 有权
    柔性基板及其制造方法以及使用其的薄膜晶体管

    公开(公告)号:US20090256154A1

    公开(公告)日:2009-10-15

    申请号:US12379648

    申请日:2009-02-26

    IPC分类号: H01L29/786

    摘要: A flexible substrate for a TFT includes a metal substrate having a predetermined coefficient of thermal expansion, and a buffer layer on the metal substrate, the buffer layer including a silicon oxide or a silicon nitride, wherein the predetermined coefficient of thermal expansion of the metal substrate satisfies an equation as follows, α f + 0.162 × ( 1 - v f ) E f ≤ α s ≤ α f + 0.889 × ( 1 - v f ) E f Ef representing Young's modulus of the buffer layer, vf representing Poisson's ratio of the buffer layer, αf representing a coefficient of thermal expansion of the buffer layer, and αs representing the predetermined coefficient of thermal expansion of the metal substrate.

    摘要翻译: 用于TFT的柔性基板包括具有预定热膨胀系数的金属基板和金属基板上的缓冲层,缓冲层包括氧化硅或氮化硅,其中金属基板的预定热膨胀系数 满足以下等式:αf + 0.162 x(1-vf)E fαsαf + 0.889 x(1-vf)E f Ef表示缓冲层的杨氏模量,vf表示缓冲层的泊松比, alfaf表示缓冲层的热膨胀系数,α表示金属基板的预定的热膨胀系数。

    METHOD FOR MANUFACTURING FLEXIBLE DISPLAY
    6.
    发明申请
    METHOD FOR MANUFACTURING FLEXIBLE DISPLAY 审中-公开
    制造柔性显示的方法

    公开(公告)号:US20090298211A1

    公开(公告)日:2009-12-03

    申请号:US12397594

    申请日:2009-03-04

    IPC分类号: H01L51/56

    CPC分类号: H01L51/56 H01L2227/326

    摘要: A method for manufacturing a flexible display is provided. A sacrificial layer is formed on a substrate support, the sacrificial layer having an absorptivity of 1 E+02 to 1 E+06 cm−1 as a function of the wavelength of a laser. A flexible substrate is formed on the sacrificial layer. A device is formed on the flexible substrate. Laser irradiating is performed on a rear of the substrate support for detaching the sacrificial layer from the flexible substrate.

    摘要翻译: 提供一种制造柔性显示器的方法。 牺牲层形成在衬底支撑件上,牺牲层的吸收率为1E + 02至1E + 06cm-1,作为激光波长的函数。 在牺牲层上形成柔性基板。 在柔性基板上形成器件。 在基板支撑件的后部执行激光照射,以将牺牲层与柔性基板分离。

    Organic light emitting display apparatus
    7.
    发明授权
    Organic light emitting display apparatus 有权
    有机发光显示装置

    公开(公告)号:US08508125B2

    公开(公告)日:2013-08-13

    申请号:US12890165

    申请日:2010-09-24

    IPC分类号: H01J1/62

    摘要: Provided is an organic light emitting display apparatus including a substrate, a thin film transistor disposed on the substrate and including an active layer, a gate electrode, a gate insulator, a source electrode and a drain electrode, a first electrode electrically connected to the source electrode or the drain electrode, a second electrode disposed to face the first electrode, and an intermediate layer including an organic emitting layer and disposed between the first electrode and the second electrode. The gate insulator is disposed to insulate the gate electrode and the active layer and includes a plurality of patterns spaced apart from each other.

    摘要翻译: 本发明提供一种有机发光显示装置,包括:基板,设置在基板上的薄膜晶体管,具有有源层,栅极电极,栅极绝缘体,源电极和漏极电极,与源极电连接的第一电极 电极或漏电极,与第一电极相对设置的第二电极以及设置在第一电极和第二电极之间的包含有机发光层的中间层。 门绝缘体设置成使栅电极和有源层绝缘,并且包括彼此间隔开的多个图案。

    METHOD OF MANUFACTURING FLEXIBLE DISPLAY APPARATUS
    8.
    发明申请
    METHOD OF MANUFACTURING FLEXIBLE DISPLAY APPARATUS 有权
    制造柔性显示装置的方法

    公开(公告)号:US20110134018A1

    公开(公告)日:2011-06-09

    申请号:US12858322

    申请日:2010-08-17

    IPC分类号: G09G3/30 H01J9/00

    摘要: A method of manufacturing a flexible display apparatus, and more particularly, to a flexible display apparatus including a display unit including a thin-film transistor which is easily encapsulated. The method of manufacturing a flexible display apparatus includes: sequentially forming a first plastic film and a first barrier layer on a first substrate; forming a thin-film transistor on the first barrier layer; forming on the thin-film transistor a display device that is electrically connected to the thin-film transistor; forming an encapsulation member including a second substrate, a second plastic film, and a second barrier layer, wherein the second substrate and the second film are sequentially stacked on the second barrier layer; combining the encapsulation member with the upper portion of the display device; ablating the first substrate from the first plastic film; and ablating the second substrate from the second plastic film.

    摘要翻译: 一种制造柔性显示装置的方法,更具体地说涉及一种柔性显示装置,其包括具有容易封装的薄膜晶体管的显示单元。 制造柔性显示装置的方法包括:在第一基板上依次形成第一塑料膜和第一阻挡层; 在所述第一阻挡层上形成薄膜晶体管; 在所述薄膜晶体管上形成电连接到所述薄膜晶体管的显示装置; 形成包括第二基板,第二塑料膜和第二阻挡层的封装构件,其中所述第二基板和所述第二膜依次堆叠在所述第二阻挡层上; 将封装构件与显示装置的上部组合; 从第一塑料膜烧蚀第一衬底; 以及从所述第二塑料膜烧蚀所述第二衬底。