公开(公告)号：US5622892A

公开(公告)日：1997-04-22

申请号：US407431

申请日：1995-03-17

Applicant: Raschid J. Bezama ,  Dominic J. Schepis ,  Krishna Seshan

Inventor： Raschid J. Bezama ,  Dominic J. Schepis ,  Krishna Seshan

IPC: H01L21/82 ,  H01L23/367 ,  H01L23/525 ,  H01L21/306 ,  H01L21/326

CPC classification number: H01L23/5256 ,  H01L23/3672 ,  H01L2924/0002 ,  Y10S438/922

Abstract: A method of fabricating an electrically programmable fuse buried under quartz and layers of polyimide with a specific structure to enhance its "thermal" capabilities. The fuse is designed to "blow" and cool off quickly so as not to cause damage to areas above and surrounding the fuse. A passivation layer is added above the fuse to act as a heat sink and absorb and redistribute the heat generated from one localized area to a broader and cooler area. The materials used for the fuse and the heat sink are selected to be compatible with both oxide and polyimide personalization schemes. Modeling of the fuse enables optimizing the characteristics of the fuse, particularly to transmit to the surface of the passivation layer the thermal wave created during programming of the fuse.

Abstract translation: 埋设在石英下的电可编程熔丝的制造方法和具有特定结构的聚酰亚胺层以提高其“热”能力。 保险丝设计为“吹”并快速冷却，以免对保险丝上方和周围的区域造成损坏。 保险丝上方加上钝化层，作为散热片，吸收并重新分配从一个局部区域产生的热量到较宽和较冷的区域。 用于保险丝和散热器的材料被选择为与氧化物和聚酰亚胺个性化方案兼容。 保险丝的建模可以优化保险丝的特性，特别是在保险丝编程期间向钝化层的表面传输热波。

公开(公告)号：US4366338A

公开(公告)日：1982-12-28

申请号：US223768

申请日：1981-01-09

Applicant: George W. Turner ,  John C. C. Fan ,  Jack P. Salerno

Inventor： George W. Turner ,  John C. C. Fan ,  Jack P. Salerno

IPC: H01L31/0368 ,  H01L31/0693 ,  H01L31/18 ,  H01L31/06

CPC classification number: H01L31/0693 ,  H01L31/0368 ,  H01L31/1868 ,  Y02E10/544 ,  Y02P70/521 ,  Y10S148/018 ,  Y10S148/024 ,  Y10S148/082 ,  Y10S148/097 ,  Y10S148/122 ,  Y10S438/919 ,  Y10S438/922

Abstract: A method of compensating grain boundaries or dislocations causing interstices to form particularly in polycrystalline semiconductor materials is disclosed which comprises selectively diffusing opposite impurity-type donor semiconductor material into the interstice to thereby reduce the conductivity of the interstice.

Abstract translation: 公开了一种补偿晶界或位错导致空隙形成的方法，特别是在多晶半导体材料中形成，其包括将相对的杂质型施主半导体材料选择性地扩散到空隙中，从而降低间隙的导电性。

公开(公告)号：US4171997A

公开(公告)日：1979-10-23

申请号：US902083

申请日：1978-05-02

Applicant: Horst Irmler

Inventor： Horst Irmler

IPC: H01L31/04 ,  H01L21/22 ,  H01L21/321 ,  H01L21/3215 ,  H01L29/04 ,  H01L31/068 ,  B01J17/00

CPC classification number: H01L31/068 ,  H01L21/321 ,  H01L21/32155 ,  H01L29/04 ,  Y02E10/547 ,  Y10S438/92 ,  Y10S438/922

Abstract: A method of producing semiconductor components, particularly solar elements, in which a P- or N-semiconductor chip is subjected to an oxidation step prior to formation of the device PN junction, such that the external surface and internal grain boundaries of the wafer are covered by a passivating oxide layer. Thereafter, the oxide layer on at least a portion of the semiconductor chip is removed, and at least one PN junction is formed in the chip.

Abstract translation: 一种制造半导体部件，特别是太阳能元件的方法，其中P-或N-半导体芯片在形成器件PN结之前经受氧化步骤，使得晶片的外表面和内部晶界被覆盖 通过钝化氧化物层。 此后，去除半导体芯片的至少一部分上的氧化物层，并且在芯片中形成至少一个PN结。

公开(公告)号：US3473958A

公开(公告)日：1969-10-21

申请号：US3473958D

申请日：1967-07-26

Applicant: NIPPON TELEGRAPH & TELEPHONE

Inventor： WAKU SHIGERU

IPC: C04B35/468 ,  C04B41/50 ,  C04B41/87 ,  H01B1/00 ,  H01G4/12 ,  H01G9/00 ,  C03C17/00

CPC classification number: C04B41/87 ,  C04B35/4682 ,  C04B41/5025 ,  H01B1/00 ,  H01G4/1281 ,  Y10S438/922 ,  Y10T428/256

公开(公告)号：US2979427A

公开(公告)日：1961-04-11

申请号：US64662557

申请日：1957-03-18

Applicant: WILLIAM SHOCKLEY

Inventor： WILLIAM SHOCKLEY

IPC: H01L21/00 ,  H01L21/22 ,  H01L21/322 ,  H01L21/70 ,  H01L29/00 ,  H01L29/06 ,  H01L29/36 ,  H01L29/73

CPC classification number: H01L29/36 ,  H01L21/00 ,  H01L21/22 ,  H01L21/322 ,  H01L21/70 ,  H01L29/00 ,  H01L29/06 ,  H01L29/73 ,  Y10S438/919 ,  Y10S438/922

公开(公告)号：US2937114A

公开(公告)日：1960-05-17

申请号：US81770559

申请日：1959-05-29

Applicant: SHOCKLEY TRANSISTOR CORP

Inventor： WILLIAM SHOCKLEY

IPC: H01L21/00 ,  H01L21/225 ,  H01L29/00

CPC classification number: H01L21/00 ,  H01L21/2252 ,  H01L29/00 ,  Y10S257/913 ,  Y10S438/922 ,  Y10S438/965