公开(公告)号：US20080310470A1

公开(公告)日：2008-12-18

申请号：US11820061

申请日：2007-06-18

申请人： Boon-Siew Ooi ,  Hery Susanto Djie

发明人： Boon-Siew Ooi ,  Hery Susanto Djie

IPC分类号： H01S5/00 ,  H01L21/00

CPC分类号： H01S5/341 ,  B82Y20/00 ,  H01S5/1032 ,  H01S5/125 ,  H01S5/141 ,  H01S5/162 ,  H01S5/22 ,  H01S5/3412 ,  H01S5/3413 ,  H01S5/3414 ,  H01S5/4043 ,  H01S5/4068 ,  H01S5/4087

摘要： A broadband laser having a first cladding layer, a second cladding layer. A semiconductor structure between the first and second cladding layers has a layer of inhomogeneous quantum nano heterostructures. The inhomogeneous quantum nano heterostructures are engineered to lase at a ground state and at an excited state.

摘要翻译： 一种具有第一包层，第二包层的宽带激光器。 第一和第二包层之间的半导体结构具有不均匀的量子纳米异质结构层。 非均匀量子纳米异质结构被设计为在基态和激发态下发光。

公开(公告)号：US07035305B2

公开(公告)日：2006-04-25

申请号：US10141862

申请日：2002-05-10

申请人： David M. Adams ,  Joan E Haysom ,  Ian Woods

发明人： David M. Adams ,  Joan E Haysom ,  Ian Woods

IPC分类号： H01S5/00 ,  H01S3/10

CPC分类号： B82Y20/00 ,  H01S5/026 ,  H01S5/12 ,  H01S5/1221 ,  H01S5/1228 ,  H01S5/3413 ,  H01S5/3414 ,  H01S5/4031 ,  H01S5/4087 ,  H01S5/50

摘要： An optical device, including a monolithically integrated diode laser and semiconductor optical amplifier, that has reduced linewidth and improved side mode suppression for a given output power target. In a preferred embodiment, the diode laser is detuned from a gain peak wavelength to an emission wavelength. The semiconductor optical amplifier has an active region that is bandgap shifted to move its gain peak towards the emission wavelength of the laser diode, thus reducing its linewidth enhancement factor. The diode laser is preferably either a gain-coupled or index-coupled distributed feedback laser. The bandgap shift can be effected by known bandgap shifting methods, such as ion implantation, dielectric cap disordering, and laser induced disordering.

公开(公告)号：US20050153473A1

公开(公告)日：2005-07-14

申请号：US10510357

申请日：2003-04-04

申请人： Jing Hua Teng ,  Soo Jin Chua ,  Jian Rong Dong

发明人： Jing Hua Teng ,  Soo Jin Chua ,  Jian Rong Dong

IPC分类号： H01L21/18 ,  H01L29/12 ,  H01L33/00 ,  H01S5/10 ,  H01S5/16 ,  H01S5/40 ,  H01L21/00

CPC分类号： B82Y10/00 ,  B82Y20/00 ,  H01L21/182 ,  H01L29/122 ,  H01L29/125 ,  H01L29/127 ,  H01L33/0095 ,  H01S5/1003 ,  H01S5/1092 ,  H01S5/162 ,  H01S5/3412 ,  H01S5/3414 ,  H01S5/4087

摘要： A method for forming a modified semiconductor having a number of band gaps involves providing a semiconductor having a surface and a quantum region which emits photons in response to electrical or optical stimulation, the quantum region having an original band gap and being disposed under the surface and applying a number of layers of a number of materials to a number of selected regions of the surface, the materials being adapted to cause, upon thermal annealing, a number of different degrees of intermixing in a number of portions of the quantum region disposed immediately below each of the selected regions of the surface. The layers of materials can be applied in a dot or line pattern, or both, to increase the plurality of band gap tuning. The method includes thermally annealing the layers to the surface. The methods result in a modified semiconductor which exhibits a number of different band gaps in a number of portions of the quantum region depending upon the positioning of the layers of materials on the surface immediately above the respective portions of the quantum region.

摘要翻译： 用于形成具有多个带隙的修改的半导体的方法涉及提供具有表面的半导体和响应于电或光刺激而发射光子的量子区域，该量子区域具有原始带隙并设置在该表面下方， 将多个材料层施加到表面的多个选定区域，该材料适于在热退火时引起在紧邻下面布置的量子区域的多个部分中的多个不同程度的混合 每个表面的选定区域。 可以以点或线图案或两者来施加材料层以增加多个带隙调谐。 该方法包括将层热层退火到表面。 该方法产生一种修饰的半导体，其取决于材料层在量子区的相应部分上方的表面上的位置，在量子区的多个部分中表现出许多不同的带隙。

公开(公告)号：US20040196541A1

公开(公告)日：2004-10-07

申请号：US10384638

申请日：2003-03-11

申请人： Fox-Tek, Inc.

发明人： Geoff Darling ,  Ted Sargent

IPC分类号： H01S003/00

CPC分类号： H01S5/50 ,  B82Y20/00 ,  H01S5/06236 ,  H01S5/0625 ,  H01S5/2231 ,  H01S5/3414

摘要： An optical amplifier has two amplifying sections formed in a semiconductor structure. The two amplifying sections have different ratios of gain for two polarization states (e.g., TE and TM). Thus the amplifier as a whole has a gain ratio determined by the gains of the two amplifying sections. The two amplifying sections are separately electronically controllable so as to control the gains of the two amplifying sections and thus the gain ratio of the amplifier as a whole. Such an amplifier can be made by quantum well intermixing.

摘要翻译： 光放大器具有形成在半导体结构中的两个放大部分。 两个放大部分对于两个偏振态（例如，TE和TM）具有不同的增益比。 因此，放大器整体具有由两个放大部分的增益确定的增益比。 两个放大部分可分别电子控制，以便控制两个放大部分的增益，从而控制整个放大器的增益比。 这样的放大器可以通过量子阱混合来制造。

公开(公告)号：US06788719B2

公开(公告)日：2004-09-07

申请号：US09895848

申请日：2001-06-29

申请人： Paul F. Crowder

发明人： Paul F. Crowder

IPC分类号： H01S310

CPC分类号： B82Y20/00 ,  H01S5/0014 ,  H01S5/0425 ,  H01S5/0617 ,  H01S5/06256 ,  H01S5/06808 ,  H01S5/0687 ,  H01S5/1209 ,  H01S5/1225 ,  H01S5/125 ,  H01S5/3414

摘要： An open loop controller for use with a sampled grating distributed Bragg reflector (SGDBR) laser is presented. The controller for provides separate inputs to the laser including a front mirror current controlling a front mirror and a back mirror current controlling a back mirror to control, as well as a phase current and a gain current. The open loop controller in accordance with the present invention further includes a lookup table generated to reflect the unique specifications of each SGDBR laser is controlled.

摘要翻译： 提出了一种用于采样光栅分布布拉格反射器（SGDBR）激光器的开环控制器。 该控制器为激光器提供单独的输入，包括控制前反射镜的前镜电流和控制后视镜以控制的后视镜电流以及相电流和增益电流。 根据本发明的开环控制器还包括产生以反映每个SGDBR激光器的独特规格的查找表被控制。

公开(公告)号：US06658035B1

公开(公告)日：2003-12-02

申请号：US09614375

申请日：2000-07-12

申请人： Thomas Beck Mason ,  Gregory Fish ,  Larry Coldren

发明人： Thomas Beck Mason ,  Gregory Fish ,  Larry Coldren

IPC分类号： H01S5026

CPC分类号： B82Y20/00 ,  H01S5/0262 ,  H01S5/0265 ,  H01S5/0425 ,  H01S5/0427 ,  H01S5/06251 ,  H01S5/06253 ,  H01S5/06256 ,  H01S5/1209 ,  H01S5/1243 ,  H01S5/3414 ,  H01S5/50 ,  H01S5/5018 ,  H04B10/2914

摘要： A laser assembly includes an epitaxial structure formed on a substrate. A separately controllable tunable laser resonator and external optical amplifier are formed in the epitaxial structure. At least a portion of the laser and amplifier share a common waveguide, which may have non-uniform optical or geometrical properties along the waveguide centerline or across a normal to the centerline.

摘要翻译： 激光器组件包括形成在衬底上的外延结构。 在外延结构中形成独立可控的可调激光谐振器和外部光放大器。 激光和放大器的至少一部分共享共同的波导，其可以沿着波导中心线或者穿过中心线的法线具有不均匀的光学或几何特性。

公开(公告)号：US20030210723A1

公开(公告)日：2003-11-13

申请号：US10141862

申请日：2002-05-10

发明人： David M. Adams ,  Joan E. Haysom ,  Ian Woods

IPC分类号： H01S005/00

CPC分类号： B82Y20/00 ,  H01S5/026 ,  H01S5/12 ,  H01S5/1221 ,  H01S5/1228 ,  H01S5/3413 ,  H01S5/3414 ,  H01S5/4031 ,  H01S5/4087 ,  H01S5/50

摘要： An optical device, including a monolithically integrated diode laser and semiconductor optical amplifier, that has reduced linewidth and improved side mode suppression for a given output power target. In a preferred embodiment, the diode laser is detuned from a gain peak wavelength to an emission wavelength. The semiconductor optical amplifier has an active region that is bandgap shifted to move its gain peak towards the emission wavelength of the laser diode, thus reducing its linewidth enhancement factor. The diode laser is preferably either a gain-coupled or index-coupled distributed feedback laser. The bandgap shift can be effected by known bandgap shifting methods, such as ion implantation, dielectric cap disordering, and laser induced disordering.

摘要翻译： 一种包括单片集成二极管激光器和半导体光放大器的光学装置，其对于给定的输出功率目标具有减小的线宽和改进的侧模抑制。 在优选实施例中，二极管激光器从增益峰值波长失谐到发射波长。 半导体光放大器具有带隙移位的有源区域，以将其增益峰值朝向激光二极管的发射波长移动，从而减小其线宽增强因子。 二极管激光器优选地是增益耦合或折射率分布反馈激光器。 带隙偏移可以通过已知的带隙移位方法来实现，例如离子注入，介电帽无序和激光诱导的无序化。

公开(公告)号：US20030205716A1

公开(公告)日：2003-11-06

申请号：US10423149

申请日：2003-04-25

发明人： John Stephen Massa ,  Adrian John Taylor ,  Rodney Hollands Moss

IPC分类号： H01L033/00

CPC分类号： H01L21/02241 ,  B82Y20/00 ,  H01L21/02312 ,  H01L21/31662 ,  H01L33/0062 ,  H01S5/0206 ,  H01S5/2275 ,  H01S5/3414 ,  H01S2301/173

摘要： An oxide layer on an indium phosphide semiconductor substrate is doped with silicon. This enables epitaxial layers to be deposited upon the substrate in a conventional manner, including mesa etching and overgrowth, to form a semiconductor structure. The doped oxide layer is thought to reduce diffusion of phosphorus out of the substrate and thus to reduce the zinc levels in the active region of the structure. Additionally, or as an alternative, after mesa etching oxide can be formed on the mesa sides and then doped with silicon. Conventional blocking layers can then be formed over the doped oxide, reducing the diffusion of zinc from the blocking layers into the rest of the structure.

摘要翻译： 磷化铟半导体衬底上的氧化物层掺杂有硅。 这使得能够以常规方式将外延层沉积在衬底上，包括台面蚀刻和过度生长，以形成半导体结构。 认为掺杂的氧化物层可以减少磷从衬底的扩散，从而降低结构有源区的锌含量。 另外，或作为替代方案，在台面蚀刻之后可以在台面上形成氧化物，然后用硅掺杂。 然后可以在掺杂的氧化物上形成常规的阻挡层，减少锌从阻挡层扩散到结构的其余部分。

公开(公告)号：US06611007B2

公开(公告)日：2003-08-26

申请号：US10140824

申请日：2002-05-09

申请人： David A. Thompson ,  Brad J. Robinson ,  Gregory J. Letal ,  Alex S. W. Lee

发明人： David A. Thompson ,  Brad J. Robinson ,  Gregory J. Letal ,  Alex S. W. Lee

IPC分类号： H01L310328

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L21/182 ,  H01L29/155 ,  H01L29/201 ,  H01L33/30 ,  H01S5/0265 ,  H01S5/2068 ,  H01S5/2072 ,  H01S5/3414 ,  Y10S257/929

摘要： A novel quantum well intermixing method for regionally modifying the bandgap properties of InGaAsP quantum well structures is disclosed. The method induces bandgap wavelength blue shifting and deep states for reducing carrier lifetime within InGaAsP quantum well structures. The novel quantum well intermixing technique is applied to the modulator section of an integrated DFB laser/electro-absorption modulator, wherein the modulator exhibits fast switching times with efficient optical coupling between the DFB laser and modulator region.

公开(公告)号：US06580739B1

公开(公告)日：2003-06-17

申请号：US09614377

申请日：2000-07-12

申请人： Larry Coldren

发明人： Larry Coldren

IPC分类号： H01S5026

CPC分类号： B82Y20/00 ,  H01S5/0262 ,  H01S5/0265 ,  H01S5/0425 ,  H01S5/0427 ,  H01S5/06251 ,  H01S5/06253 ,  H01S5/06256 ,  H01S5/1209 ,  H01S5/1243 ,  H01S5/3414 ,  H01S5/50 ,  H01S5/5018 ,  H04B10/2914

摘要： A wavelength converter assembly includes a substrate. An epitaxial structure is formed on the substrate with areas of different optical properties. A laser and a photodetector are formed in the epitaxial structure. The photodetector generates a first electrical signal in response to an optical signal. A conditioning circuit is coupled to the laser and the photodetector. The conditioning circuit receives the first electrical signal and provides a second electrical signal to the laser to modulate its optical output.

摘要翻译： 波长转换器组件包括衬底。 在具有不同光学特性的区域的衬底上形成外延结构。 在外延结构中形成激光器和光电检测器。 光检测器响应光信号产生第一电信号。 调理电路耦合到激光器和光电检测器。 调理电路接收第一电信号，并向激光器提供第二电信号以调制其光输出。