发明申请
- 专利标题： Broadband semiconductor laser
- 专利标题（中）： 宽带半导体激光器
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申请号： US11820061申请日： 2007-06-18
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公开(公告)号： US20080310470A1公开(公告)日： 2008-12-18
- 发明人: Boon-Siew Ooi , Hery Susanto Djie
- 申请人： Boon-Siew Ooi , Hery Susanto Djie
- 专利权人： Lehigh University
- 当前专利权人： Lehigh University
- 主分类号： H01S5/00
- IPC分类号： H01S5/00 ; H01L21/00
摘要：
A broadband laser having a first cladding layer, a second cladding layer. A semiconductor structure between the first and second cladding layers has a layer of inhomogeneous quantum nano heterostructures. The inhomogeneous quantum nano heterostructures are engineered to lase at a ground state and at an excited state.
公开/授权文献
- US3068658A Venting vapor apparatus 公开/授权日：1962-12-18
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