公开(公告)号：US07922821B2

公开(公告)日：2011-04-12

申请号：US11918125

申请日：2006-04-21

申请人： Pekka Soininen

发明人： Pekka Soininen

IPC分类号： C23C16/00

CPC分类号： C23C14/243 ,  C23C14/228 ,  C30B23/066 ,  C30B25/14 ,  C30B35/00 ,  Y10T29/49826 ,  Y10T29/53

摘要： The invention relates to an arrangement for installing a source into a gas deposition reactor. The arrangement comprises at least one source fitting for the source such that the source fitting is connected to a reaction space of the gas deposition reactor, and a source installable at least partly inside the source fitting or a source space connected to the source fitting. According to the invention, the arrangement further comprises reception means in the source fitting for receiving the source, and charging means for installing the source in place in the source fitting for use, and a chamber (1), provided in the source, for a solid or liquid source material (3), and isolating means (7, 19) for isolating the chamber (1) substantially from environment.

摘要翻译： 本发明涉及一种用于将源安装到气体沉积反应器中的装置。 该装置包括用于源的至少一个源配件，使得源配件连接到气体沉积反应器的反应空间，以及可至少部分地安装在源配件内的源或连接到源配件的源空间。 根据本发明，该装置还包括用于接收源的源装置中的接收装置，以及用于将源安装在源配件中以便使用的充电装置，以及设置在源中的室（1），用于 固体或液体源材料（3）和用于基本上与环境隔离室（1）的隔离装置（7,19）。

公开(公告)号：US20090053131A1

公开(公告)日：2009-02-26

申请号：US11909505

申请日：2006-03-24

申请人： Atsuo Toutsuka ,  Yoshifumi Kawaguchi ,  Masaaki Kunishige

发明人： Atsuo Toutsuka ,  Yoshifumi Kawaguchi ,  Masaaki Kunishige

IPC分类号： C01F5/02 ,  B32B37/00

CPC分类号： C30B29/16 ,  C23C14/081 ,  C30B11/003 ,  C30B23/066

摘要： Provided is a MgO single crystal for obtaining a magnesium oxide (MgO) single crystal deposition material which is prevented from splashing during the vapor deposition in, e.g., an electron beam deposition method without reducing the deposition rate, and for obtaining a MgO single crystal substrate which can form thereon, e.g., a superconductor thin film having excellent superconducting properties. A MgO single crystal having a calcium content of 150×10−6 to 1,000×10−6 kg/kg and a silicon content of 10×10−6 kg/kg or less, wherein the MgO single crystal has a variation of 30% or less in terms of a CV value in detected amounts of calcium fragment ions, as analyzed by TOF-SIMS with respect to the polished surface of the MgO single crystal. A MgO single crystal deposition material and a MgO single crystal substrate for forming a thin film obtained from the MgO single crystal.

摘要翻译： 本发明提供一种用于获得氧化镁（MgO）单晶沉积材料的MgO单晶，其在例如电子束沉积方法中在气相沉积期间防止溅射而不降低沉积速率，并且获得MgO单晶衬底 其可以在其上形成，例如具有优异超导性能的超导体薄膜。 具有钙含量为150×10 -6〜1,000×10 -6 kg / kg，硅含量为10×10 -6 kg / kg以下的MgO单晶，其中MgO单晶的变化范围为30％以下， 通过TOF-SIMS相对于MgO单晶的抛光表面分析的钙碎片离子的检测量的CV值。 一种MgO单晶沉积材料和用于形成由MgO单晶获得的薄膜的MgO单晶衬底。

公开(公告)号：US20080245297A1

公开(公告)日：2008-10-09

申请号：US12078322

申请日：2008-03-28

申请人： Ken Nakahara ,  Hiroyuki Yuji ,  Kentaro Tamura ,  Shunsuke Akasaka ,  Masashi Kawasaki ,  Akira Ohtomo ,  Atsushi Tsukazaki

发明人： Ken Nakahara ,  Hiroyuki Yuji ,  Kentaro Tamura ,  Shunsuke Akasaka ,  Masashi Kawasaki ,  Akira Ohtomo ,  Atsushi Tsukazaki

IPC分类号： B05C5/00

CPC分类号： C30B23/066 ,  C30B35/00

摘要： A container of a material supply apparatus is configured of a crucible and an orifice. The crucible has a cylindrical shape, a rectangular-column shape or the like, and is hollow. Heat sources such as heaters are disposed around the crucible. The orifice including an opening is provided on a side of the crucible in a material element supplying direction. The orifice includes a pipe portion that extends in the material element supplying direction. The opening is formed on a tip of the pipe portion. An opening area of the pipe portion is formed to become gradually narrower towards the material element supplying side, namely in a direction of the opening.

摘要翻译： 材料供给装置的容器由坩埚和孔构成。 坩埚具有圆柱形状，矩形柱状等，并且是中空的。 诸如加热器的热源设置在坩埚周围。 包括开口的孔口沿着材料元件供给方向设置在坩埚的一侧。 孔口包括在材料元件供给方向上延伸的管部分。 开口形成在管部的前端。 管部的开口部形成为朝向材料供给侧逐渐变窄，即开口方向。

公开(公告)号：US20080134957A1

公开(公告)日：2008-06-12

申请号：US11728027

申请日：2007-03-23

申请人： Leo J. Schowalter ,  Glen A. Slack

发明人： Leo J. Schowalter ,  Glen A. Slack

IPC分类号： C30B11/00

CPC分类号： C30B29/40 ,  C30B11/002 ,  C30B23/00 ,  C30B23/066 ,  C30B29/403 ,  C30B35/002 ,  Y10T117/10 ,  Y10T117/108 ,  Y10T117/1084

摘要： A crucible for growing III-nitride (e.g., aluminum nitride) single crystals is provided. The crucible includes an elongated wall structure defining an interior crystal growth cavity. Embodiments include a plurality of grains and a wall thickness of at least about 1.5 times the average grain size. In particular embodiments, the crucible includes first and second layers of grains the first layer including grains forming an inside surface thereof and the second layer being superposed with the first layer. The crucible may be fabricated from tungsten-rhenium (W—Re) alloys; rhenium (Re); tantalum monocarbide (TaC); tantalum nitride (Ta2N); hafnium nitride (HfN); a mixture of tungsten and tantalum (W—Ta); tungsten (W); and combinations thereof.

摘要翻译： 提供了用于生长III族氮化物（例如氮化铝）单晶的坩埚。 坩埚包括限定内部晶体生长腔的细长壁结构。 实施例包括多个晶粒和至少约平均晶粒尺寸的1.5倍的壁厚。 在具体实施方案中，坩埚包括第一和第二颗粒层，第一层包括形成内表面的颗粒，第二层与第一层重叠。 坩埚可以由钨 - 铼（W-Re）合金制成; 铼（Re）; 钽单体碱（TaC）; 氮化钽（Ta 2 N）; 氮化铪（HfN）; 钨和钽的混合物（W-Ta）; 钨（W）; 及其组合。

公开(公告)号：US20060009012A1

公开(公告)日：2006-01-12

申请号：US11227770

申请日：2005-09-15

申请人： Christopher Leitz ,  Christopher Vineis ,  Richard Westhoff ,  Vicky Yang ,  Matthew Currie

发明人： Christopher Leitz ,  Christopher Vineis ,  Richard Westhoff ,  Vicky Yang ,  Matthew Currie

IPC分类号： H01L21/20

CPC分类号： H01L21/0251 ,  C30B23/025 ,  C30B23/066 ,  C30B25/02 ,  C30B25/183 ,  C30B29/52 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/823807

摘要： Dislocation pile-ups in compositionally graded semiconductor layers are reduced or eliminated, thereby leading to increased semiconductor device yield and manufacturability. This is accomplished by introducing a semiconductor layer having a plurality of threading dislocations distributed substantially uniformly across its surface as a starting layer and/or at least one intermediate layer during growth and relaxation of the compositionally graded layer. The semiconductor layer may include a seed layer disposed proximal to the surface of the semiconductor layer and having the threading dislocations uniformly distributed therein.

摘要翻译： 组分梯度半导体层中的位错堆叠被减少或消除，从而导致半导体器件的产量和可制造性的提高。 这是通过在组成渐变层的生长和弛豫期间引入具有多个穿透位错基本上均匀分布在其表面上的半导体层作为起始层和/或至少一个中间层来实现的。 半导体层可以包括接近半导体层的表面并且穿透位错均匀分布在其中的晶种层。

公开(公告)号：US20050166846A1

公开(公告)日：2005-08-04

申请号：US10512838

申请日：2003-05-02

申请人： Giacomo Benvenuti ,  Simone Amorosi ,  Estelle Halary-Wagner

发明人： Giacomo Benvenuti ,  Simone Amorosi ,  Estelle Halary-Wagner

IPC分类号： C23C14/24 ,  C30B23/06 ,  C23C16/00

CPC分类号： C23F4/02 ,  C23C14/24 ,  C23C14/243 ,  C30B23/066

摘要： The invention relates to an effusing source for film deposition made of a reservoir comprising one hole characterized by the fact that the hole diameter is less than one order of magnitude than the mean free path of the molecules determined by the pressure and its thickness is at least one order of magnitude smaller than the diameter. Preferably the source has several holes.

摘要翻译： 本发明涉及一种用于由沉积物制成的成膜沉积源，其包括一个孔，其特征在于孔直径小于通过压力确定的分子的平均自由程的一个数量级，并且其厚度至少为 比直径小一个数量级。 源最好有几个孔。

公开(公告)号：US06924012B2

公开(公告)日：2005-08-02

申请号：US09780355

申请日：2001-02-12

申请人： Noboru Kimura ,  Kenji Satoh ,  Masaki Seki

发明人： Noboru Kimura ,  Kenji Satoh ,  Masaki Seki

IPC分类号： C30B23/08 ,  C23C16/01 ,  C23C16/34 ,  C23C16/38 ,  C30B23/06 ,  H01L21/203 ,  B32B1/02

CPC分类号： C23C16/342 ,  C23C16/01 ,  C30B23/066 ,  Y10T428/131 ,  Y10T428/1317 ,  Y10T428/1321 ,  Y10T428/1345

摘要： A pyrolytic boron nirtride double container for a source of molecular beams used in molecular beam epitaxy, wherein the transmissivity of an inner container of the pyrolytic boron nitride double container with respect to light having a wave number of 2600 cm−1 to 6500 cm−1 is 90% or less of that of an outer container. The pyrolytic boron nitride double container, which enables molecular beams to generate stably with good temperature controllability and high heat efficiency and which can be used in a stable manner, is provided through a simple process and at low cost, so that molecular beam epitaxial growth can be stabilized, quality of the epitaxial film can be improved, and even though the rise and drop in the temperature of the material melt is repeated, or even at an emergency suspension of the operation, the trouble due to breakage of the container can be prevented.

摘要翻译： 用于分子束外延中使用的分子束源的热解硼氮化物双容器，其中热解氮化硼双容器的内部容器相对于波数为2600cm -1的光的透射率为 SUP>至6500厘米-1以下的外容器的90％以下。 通过简单的工艺和低成本的方式提供使分子束稳定地产生具有良好的温度可控性和高热效率并且可以稳定使用的热解氮化硼双容器，从而使分子束外延生长可以 稳定化，可以提高外延膜的质量，并且即使重复材料熔融物的温度升高或降低，或者甚至在操作的紧急暂停时，可以防止由于容器破裂引起的故障 。

公开(公告)号：US20030141176A1

公开(公告)日：2003-07-31

申请号：US10055037

申请日：2002-01-25

发明人： Esa Supponen

IPC分类号： C10B019/00 ,  C10B001/00

CPC分类号： C23C14/243 ,  C30B23/066 ,  F17C3/08 ,  F17C2201/0104 ,  F17C2223/0123 ,  F17C2265/05

摘要： Cracker apparatus, comprising a container for providing at least one gaseous crackable source material, which container has an at least substantially open second end part forming an outlet opening, dispenser means for receiving said gaseous crackable source material from said container and for controlling the flow of said gaseous crackable source material, and cracker means for receiving said at least one gaseous crackable source material from said dispenser means. The second end part of the source material container is arranged to be detachably coupled to the dispenser means, and the supply of new source material into the source material container is arranged through said outlet opening when said container is detached from the dispenser means.

摘要翻译： 一种饼干装置，包括用于提供至少一种气体可裂化源材料的容器，该容器具有形成出口的至少基本上开口的第二端部，用于从所述容器接收所述气态可裂化源材料并用于控制 所述气体可裂化源材料和用于从所述分配器装置接收所述至少一种气体可裂解源材料的裂化装置。 源材料容器的第二端部被布置成可拆卸地联接到分配器装置，并且当所述容器与分配器装置分离时，将新的源材料供应到源材料容器中布置成通过所述出口开口。

公开(公告)号：US06547877B2

公开(公告)日：2003-04-15

申请号：US09849767

申请日：2001-05-04

申请人： Yury Alexandrovich Vodakov ,  Evgeny Nikolaevich Mokhov ,  Mark Grigorievich Ramm ,  Alexandr Dmitrievich Roenkov ,  Yury Nikolaevich Makarov ,  Sergei Yurievich Karpov ,  Mark Spiridonovich Ramm ,  Leonid Iosifovich Temkin

发明人： Yury Alexandrovich Vodakov ,  Evgeny Nikolaevich Mokhov ,  Mark Grigorievich Ramm ,  Alexandr Dmitrievich Roenkov ,  Yury Nikolaevich Makarov ,  Sergei Yurievich Karpov ,  Mark Spiridonovich Ramm ,  Leonid Iosifovich Temkin

IPC分类号： C30B2512

CPC分类号： C30B35/002 ,  C30B23/00 ,  C30B23/066 ,  C30B29/36 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1004

摘要： A method and apparatus for axially growing single crystal silicon carbide is provided. Utilizing the system, silicon carbide can be grown with a dislocation density of less than 104 per square centimeter, a micropipe density of less than 10 per square centimeter, and a secondary phase inclusion density of less than 10 per cubic centimeter. As disclosed, a SiC source and a SiC seed crystal of the desired polytype are co-located within a crucible, the growth zone being defined by the substantially parallel surfaces of the source and the seed in combination with the sidewalls of the crucible. Prior to reaching the growth temperature, the crucible is evacuated and sealed, either directly or through the use of a secondary container housing the crucible. The crucible is comprised of tantalum or niobium that has been specially treated. As a result of the treatment, the inner surfaces of the crucible exhibit a depth variable composition of Ta—Si—C or Nb—Si—C that is no longer capable of absorbing SiC vapors, thus allowing the vapor-phase composition within the crucible to be close to the SiC—Si system with the partial pressure of Si-vapor slightly higher than that in the SiC—Si system.

公开(公告)号：US20020083890A1

公开(公告)日：2002-07-04

申请号：US09849767

申请日：2001-05-04

发明人： Yury Alexandrovich Vodakov ,  Evgeny Nikolaevich Mokhov ,  Mark Grigorievich Ramm ,  Alexandr Dmitrievich Roenkov ,  Yury Nikolaevich Makarov ,  Sergei Yurievich Karpov ,  Mark Spiridonovich Ramm ,  Leonid Iosifovich Temkin

IPC分类号： C30B023/00 ,  C30B025/00 ,  C30B028/12 ,  C30B028/14

CPC分类号： C30B35/002 ,  C30B23/00 ,  C30B23/066 ,  C30B29/36 ,  Y10S117/90 ,  Y10T117/10 ,  Y10T117/1004

摘要： A method and apparatus for axially growing single crystal silicon carbide is provided. Utilizing the system, silicon carbide can be grown with a dislocation density of less than 104 per square centimeter, a micropipe density of less than 10 per square centimeter, and a secondary phase inclusion density of less than 10 per cubic centimeter. As disclosed, a SiC source and a SiC seed crystal of the desired polytype are co-located within a crucible, the growth zone being defined by the substantially parallel surfaces of the source and the seed in combination with the sidewalls of the crucible. Prior to reaching the growth temperature, the crucible is evacuated and sealed, either directly or through the use of a secondary container housing the crucible. The crucible is comprised of tantalum or niobium that has been specially treated. As a result of the treatment, the inner surfaces of the crucible exhibit a depth variable composition of TanullSinullC or NbnullSinullC that is no longer capable of absorbing SiC vapors, thus allowing the vapor-phase composition within the crucible to be close to the SiCnullSi system with the partial pressure of Si-vapor slightly higher than that in the SiCnullSi system.

摘要翻译： 提供了用于轴向生长单晶碳化硅的方法和装置。 利用该系统，碳化硅可以以每平方厘米小于104的位错密度，小于10每平方厘米的微管密度和小于10立方厘米的次相夹杂密度生长。 如所公开的，所需多晶型的SiC源和SiC晶种共同定位在坩埚内，生长区由源和晶种的基本上平行的表面与坩埚的侧壁结合而限定。 在达到生长温度之前，将坩埚直接或通过使用容纳坩埚的次级容器进行抽真空和密封。 坩埚由经过特殊处理的钽或铌构成。 作为处理的结果，坩埚的内表面显示出不再能够吸收SiC蒸汽的Ta-Si-C或Nb-Si-C的深度变化组成，因此允许坩埚内的气相组成 靠近SiC-Si系统，Si-蒸汽的分压略高于SiC-Si系统。