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公开(公告)号：US06428621B1
公开(公告)日：2002-08-06
申请号：US09782943
申请日：2001-02-14
申请人： Yury Alexandrovich Vodakov , Mark Grigorievich Ramm , Evgeny Nikolaevich Mokhov , Alexandr Dmitrievich Roenkov , Yury Nikolaevich Makarov , Sergei Yurievich Karpov , Mark Spiridonovich Ramm , Heikki I. Helava
发明人： Yury Alexandrovich Vodakov , Mark Grigorievich Ramm , Evgeny Nikolaevich Mokhov , Alexandr Dmitrievich Roenkov , Yury Nikolaevich Makarov , Sergei Yurievich Karpov , Mark Spiridonovich Ramm , Heikki I. Helava
IPC分类号： C30B2936
CPC分类号： C30B23/00 , C01B32/956 , C30B29/36 , Y10S117/902 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1016
摘要： A low defect (e.g., dislocation and micropipe) density silicon carbide (SiC) is provided as well as an apparatus and method for growing the same. The SiC crystal, growing using sublimation techniques, is preferably divided into two stages of growth. During the first stage of growth, the crystal grows in a normal direction while simultaneously expanding laterally. Although dislocation and other material defects may propagate within the axially grown material, defect propagation and generation in the laterally grown material are substantially reduced, if not altogether eliminated. After the crystal has expanded to the desired diameter, the second stage of growth begins in which lateral growth is suppressed and normal growth is enhanced. A substantially reduced defect density is maintained within the axially grown material that is based on the laterally grown first stage material.
摘要翻译： 提供了低缺陷（例如位错和微管）密度碳化硅（SiC）以及用于生长它的装置和方法。 使用升华技术生长的SiC晶体优选分为两个阶段的生长。 在生长的第一阶段，晶体沿着正常方向生长，同时横向膨胀。 尽管位错和其它材料缺陷可能在轴向生长的材料内传播，但是如果不是完全消除的话，横向生长的材料中的缺陷传播和产生显着减少。 在晶体膨胀到期望的直径之后，开始第二阶段的生长，其中横向生长被抑制并且正常生长被增强。 在轴向生长的材料内基于横向生长的第一阶段材料保持显着降低的缺陷密度。
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公开(公告)号：US06547877B2
公开(公告)日：2003-04-15
申请号：US09849767
申请日：2001-05-04
申请人： Yury Alexandrovich Vodakov , Evgeny Nikolaevich Mokhov , Mark Grigorievich Ramm , Alexandr Dmitrievich Roenkov , Yury Nikolaevich Makarov , Sergei Yurievich Karpov , Mark Spiridonovich Ramm , Leonid Iosifovich Temkin
发明人： Yury Alexandrovich Vodakov , Evgeny Nikolaevich Mokhov , Mark Grigorievich Ramm , Alexandr Dmitrievich Roenkov , Yury Nikolaevich Makarov , Sergei Yurievich Karpov , Mark Spiridonovich Ramm , Leonid Iosifovich Temkin
IPC分类号： C30B2512
CPC分类号： C30B35/002 , C30B23/00 , C30B23/066 , C30B29/36 , Y10S117/90 , Y10T117/10 , Y10T117/1004
摘要： A method and apparatus for axially growing single crystal silicon carbide is provided. Utilizing the system, silicon carbide can be grown with a dislocation density of less than 104 per square centimeter, a micropipe density of less than 10 per square centimeter, and a secondary phase inclusion density of less than 10 per cubic centimeter. As disclosed, a SiC source and a SiC seed crystal of the desired polytype are co-located within a crucible, the growth zone being defined by the substantially parallel surfaces of the source and the seed in combination with the sidewalls of the crucible. Prior to reaching the growth temperature, the crucible is evacuated and sealed, either directly or through the use of a secondary container housing the crucible. The crucible is comprised of tantalum or niobium that has been specially treated. As a result of the treatment, the inner surfaces of the crucible exhibit a depth variable composition of Ta—Si—C or Nb—Si—C that is no longer capable of absorbing SiC vapors, thus allowing the vapor-phase composition within the crucible to be close to the SiC—Si system with the partial pressure of Si-vapor slightly higher than that in the SiC—Si system.
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公开(公告)号：US06562131B2
公开(公告)日：2003-05-13
申请号：US09849771
申请日：2001-05-04
申请人： Yury Alexandrovich Vodakov , Evgeny Nikolaevich Mokhov , Mark Grigorievich Ramm , Alexandr Dmitrievich Roenkov , Yury Nikolaevich Makarov , Sergei Yurievich Karpov , Mark Spiridonovich Ramm , Leonid Iosifovich Temkin
发明人： Yury Alexandrovich Vodakov , Evgeny Nikolaevich Mokhov , Mark Grigorievich Ramm , Alexandr Dmitrievich Roenkov , Yury Nikolaevich Makarov , Sergei Yurievich Karpov , Mark Spiridonovich Ramm , Leonid Iosifovich Temkin
IPC分类号： C30B2300
CPC分类号： C30B23/00 , C30B23/066 , C30B29/36 , C30B35/002
摘要： A method and apparatus for axially growing single crystal silicon carbide is provided. Utilizing the system, silicon carbide can be grown with a dislocation density of less than 104 per square centimeter, a micropipe density of less than 10 per square centimeter, and a secondary phase inclusion density of less than 10 per cubic centimeter. As disclosed, a SiC source and a SiC seed crystal of the desired polytype are co-located within a crucible, the growth zone being defined by the substantially parallel surfaces of the source and the seed in combination with the sidewalls of the crucible. Prior to reaching the growth temperature, the crucible is evacuated and sealed, either directly or through the use of a secondary container housing the crucible. The crucible is comprised of tantalum or niobium that has been specially treated. As a result of the treatment, the inner surfaces of the crucible exhibit a depth variable composition of Ta—Si—C or Nb—Si—C that is no longer capable of absorbing SiC vapors, thus allowing the vapor-phase composition within the crucible to be close to the SiC—Si system with the partial pressure of Si-vapor slightly higher than that in the SiC—Si system.
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公开(公告)号：US06534026B2
公开(公告)日：2003-03-18
申请号：US09782951
申请日：2001-02-14
申请人： Yury Alexandrovich Vodakov , Mark Grigorievich Ramm , Evgeny Nikolaevich Mokhov , Alexandr Dmitrievich Roenkov , Yury Nikolaevich Makarov , Sergei Yurievich Karpov , Mark Spiridonovich Ramm , Heikki I. Helava
发明人： Yury Alexandrovich Vodakov , Mark Grigorievich Ramm , Evgeny Nikolaevich Mokhov , Alexandr Dmitrievich Roenkov , Yury Nikolaevich Makarov , Sergei Yurievich Karpov , Mark Spiridonovich Ramm , Heikki I. Helava
IPC分类号： C30B2306
CPC分类号： C30B23/00 , C01B32/956 , C30B29/36 , Y10S117/902 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1016
摘要： A low defect (e.g., dislocation and micropipe) density silicon carbide (SiC) is provided as well as an apparatus and method for growing the same. The SiC crystal, grown using sublimation techniques, is preferably divided into two stages of growth. During the first stage of growth, the crystal grows in a normal direction while simultaneously expanding laterally. Although dislocations and other material defects may propagate within the axially grown material, defect propagation and generation in the laterally grown material are substantially reduced, if not altogether eliminated. After the crystal has expanded to the desired diameter, the second stage of growth begins in which lateral growth is suppressed and normal growth is enhanced. A substantially reduced defect density is maintained within the axially grown material that is based on the laterally grown first stage material.
摘要翻译： 提供了低缺陷（例如位错和微管）密度碳化硅（SiC）以及用于生长它的装置和方法。 使用升华技术生长的SiC晶体优选分为两个阶段的生长。 在生长的第一阶段，晶体沿着正常方向生长，同时横向膨胀。 尽管位错和其它材料缺陷可能在轴向生长的材料内传播，但是如果不是完全消除的话，横向生长的材料中的缺陷传播和产生将显着减少。 在晶体膨胀到期望的直径之后，开始第二阶段的生长，其中横向生长被抑制并且正常生长被增强。 在轴向生长的材料内基于横向生长的第一阶段材料保持显着降低的缺陷密度。
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公开(公告)号：US06508880B2
公开(公告)日：2003-01-21
申请号：US09782949
申请日：2001-02-14
申请人： Yury Alexandrovich Vodakov , Mark Grigorievich Ramm , Evgeny Nikolaevich Mokhov , Alexandr Dmitrievich Roenkov , Yury Nikolaevich Makarov , Sergei Yurievich Karpov , Mark Spiridonovich Ramm , Heikki I. Helava
发明人： Yury Alexandrovich Vodakov , Mark Grigorievich Ramm , Evgeny Nikolaevich Mokhov , Alexandr Dmitrievich Roenkov , Yury Nikolaevich Makarov , Sergei Yurievich Karpov , Mark Spiridonovich Ramm , Heikki I. Helava
IPC分类号： C30B2512
CPC分类号： C30B23/00 , C01B32/956 , C30B29/36 , Y10S117/902 , Y10T117/10 , Y10T117/1004 , Y10T117/1008 , Y10T117/1016
摘要： A low defect (e.g., dislocation and micropipe) density silicon carbide (SiC) is provided as well as an apparatus and method for growing the same. The SiC crystal, grown using sublimation techniques, is preferably divided into two stages of growth. During the first stage of growth, the crystal grows in a normal direction while simultaneously expanding laterally. Although dislocations and other material defects may propagate within the axially grown material, defect propagation and generation in the laterally grown material are substantially reduced, if not altogether eliminated. After the crystal has expanded to the desired diameter, the second stage of growth begins in which lateral growth is suppressed and normal growth is enhanced. A substantially reduced defect density is maintained within the axially grown material that is based on the laterally grown first stage material.
摘要翻译： 提供了低缺陷（例如位错和微管）密度碳化硅（SiC）以及用于生长它的装置和方法。 使用升华技术生长的SiC晶体优选分为两个阶段的生长。 在生长的第一阶段，晶体沿着正常方向生长，同时横向膨胀。 尽管位错和其它材料缺陷可能在轴向生长的材料内传播，但是如果不是完全消除的话，横向生长的材料中的缺陷传播和产生将显着减少。 在晶体膨胀到期望的直径之后，开始第二阶段的生长，其中横向生长被抑制并且正常生长被增强。 在轴向生长的材料内基于横向生长的第一阶段材料保持显着降低的缺陷密度。
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公开(公告)号：US06863728B2
公开(公告)日：2005-03-08
申请号：US10161164
申请日：2002-05-31
申请人： Yury Alexandrovich Vodakov , Mark Grigorievich Ramm , Evgeny Nikolaevich Mokhov , Alexandr Dmitrievich Roenkov , Yury Nikolaevich Makarov , Sergei Yurievich Karpov , Mark Spiridonovich Ramm , Heikki I. Helava
发明人： Yury Alexandrovich Vodakov , Mark Grigorievich Ramm , Evgeny Nikolaevich Mokhov , Alexandr Dmitrievich Roenkov , Yury Nikolaevich Makarov , Sergei Yurievich Karpov , Mark Spiridonovich Ramm , Heikki I. Helava
CPC分类号： C30B23/00 , C30B29/36 , Y10S117/902 , Y10T117/10 , Y10T117/1008
摘要： A low defect (e.g., dislocation and micropipe) density silicon carbide (SiC) is provided as well as an apparatus and method for growing the same. The SiC crystal, grown using sublimation techniques, is preferably divided into two stages of growth. During the first stage of growth, the crystal grows in a normal direction while simultaneously expanding laterally. Although dislocations and other material defects may propagate within the axially grown material, defect propagation and generation in the laterally grown material are substantially reduced, if not altogether eliminated. After the crystal has expanded to the desired diameter, the second stage of growth begins in which lateral growth is suppressed and normal growth is enhanced. A substantially reduced defect density is maintained within the axially grown material that is based on the laterally grown first stage material.
摘要翻译： 提供了低缺陷（例如位错和微管）密度碳化硅（SiC）以及用于生长它的装置和方法。 使用升华技术生长的SiC晶体优选分为两个阶段的生长。 在生长的第一阶段，晶体沿着正常方向生长，同时横向膨胀。 尽管位错和其它材料缺陷可能在轴向生长的材料内传播，但是如果不是完全消除的话，横向生长的材料中的缺陷传播和产生将显着减少。 在晶体膨胀到期望的直径之后，开始第二阶段的生长，其中横向生长被抑制并且正常生长被增强。 在轴向生长的材料内基于横向生长的第一阶段材料保持显着降低的缺陷密度。
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公开(公告)号：US06562130B2
公开(公告)日：2003-05-13
申请号：US09849615
申请日：2001-05-04
申请人： Yury Alexandrovich Vodakov , Evgeny Nikolaevich Mokhov , Mark Grigorievich Ramm , Alexandr Dmitrievich Roenkov , Yury Nikolaevich Makarov , Sergei Yurievich Karpov , Mark Spiridonovich Ramm , Leonid Iosifovich Temkin
发明人： Yury Alexandrovich Vodakov , Evgeny Nikolaevich Mokhov , Mark Grigorievich Ramm , Alexandr Dmitrievich Roenkov , Yury Nikolaevich Makarov , Sergei Yurievich Karpov , Mark Spiridonovich Ramm , Leonid Iosifovich Temkin
IPC分类号： C30B2306
CPC分类号： C30B35/002 , C30B23/00 , C30B23/066 , C30B29/36 , Y10S117/90 , Y10T117/10 , Y10T117/1004
摘要： A method and apparatus for axially growing single crystal silicon carbide is provided. Utilizing the system, silicon carbide can be grown with a dislocation density of less than 104 per square centimeter, a micropipe density of less than 10 per square centimeter, and a secondary phase inclusion density of less than 10 per cubic centimeter. As disclosed, a SiC source and a SiC seed crystal of the desired polytype are co-located within a crucible, the growth zone being defined by the substantially parallel surfaces of the source and the seed in combination with the sidewalls of the crucible. Prior to reaching the growth temperature, the crucible is evacuated and sealed, either directly or through the use of a secondary container housing the crucible. The crucible is comprised of tantalum or niobium that has been specially treated. As a result of the treatment, the inner surfaces of the crucible exhibit a depth variable composition of Ta—Si—C or Nb—Si—C that is no longer capable of absorbing SiC vapors, thus allowing the vapor-phase composition within the crucible to be close to the SiC—Si system with the partial pressure of Si-vapor slightly higher than that in the SiC—Si system.
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公开(公告)号：US06537371B2
公开(公告)日：2003-03-25
申请号：US09849766
申请日：2001-05-04
申请人： Yury Alexandrovich Vodakov , Evgeny Nikolaevich Mokhov , Mark Grigorievich Ramm , Alexandr Dmitrievich Roenkov , Yury Nikolaevich Makarov , Sergei Yurievich Karpov , Mark Spiridonovich Ramm , Leonid Iosifovich Temkin
发明人： Yury Alexandrovich Vodakov , Evgeny Nikolaevich Mokhov , Mark Grigorievich Ramm , Alexandr Dmitrievich Roenkov , Yury Nikolaevich Makarov , Sergei Yurievich Karpov , Mark Spiridonovich Ramm , Leonid Iosifovich Temkin
IPC分类号： C30B2512
CPC分类号： C30B23/00 , C30B23/066 , C30B29/36 , C30B35/002 , Y10S117/90 , Y10T117/10 , Y10T117/1004
摘要： A method and apparatus for axially growing single crystal silicon carbide is provided. Utilizing the system, silicon carbide can be grown with a dislocation density of less than 104 per square centimeter, a micropipe density of less than 10 per square centimeter, and a secondary phase inclusion density of less than 10 per cubic centimeter. As disclosed, a SiC source and a SiC seed crystal of the desired polytype are co-located within a crucible, the growth zone being defined by the substantially parallel surfaces of the source and the seed in combination with the sidewalls of the crucible. Prior to reaching the growth temperature, the crucible is evacuated and sealed, either directly or through the use of a secondary container housing the crucible. The crucible is comprised of tantalum or niobium that has been specially treated. As a result of the treatment, the inner surfaces of the crucible exhibit a depth variable composition of Ta—Si—C or Nb—Si—C that is no longer capable of absorbing SiC vapors, thus allowing the vapor-phase composition within the crucible to be close to the SiC—Si system with the partial pressure of Si-vapor slightly higher than that in the SiC—Si system.
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公开(公告)号：US06261363B1
公开(公告)日：2001-07-17
申请号：US09355561
申请日：1999-07-20
申请人： Yury Alexandrovich Vodakov , Evgeny Nikolaevich Mokhov , Mark Grigorievich Ramm , Alexandr Dmitrievich Roenkov , Yury Nikolaevich Makarov , Sergei Yurievich Karpov , Mark Spiridonovich Ramm , Leonid Iosifovich Temkin
发明人： Yury Alexandrovich Vodakov , Evgeny Nikolaevich Mokhov , Mark Grigorievich Ramm , Alexandr Dmitrievich Roenkov , Yury Nikolaevich Makarov , Sergei Yurievich Karpov , Mark Spiridonovich Ramm , Leonid Iosifovich Temkin
IPC分类号： C30B2306
摘要： A sublimation technique of growing silicon carbide single crystals, comprising a parallel arrangement, opposite each other, of the evaporating surface of a silicon carbide source (1) and the growing surface of at least one seed crystal (2) of a specified politype, to define a growth zone (4), and generation of a reduced pressure and an operating temperature field with an axial gradient in the direction from the seed crystal (2) towards the source (1), providing evaporation of silicon carbide of the source (1) and vapour-phase crystallization of silicon carbide on the growing surface of the seed crystal (2). The growth zone (4) is here sealed before the operating temperatures are reached therein, and the process is run with a solid solution of tantalum and silicon carbides in tantalum and their chemical compounds present in the growth zone (4). The material of the source (1) employed for implementing the sublimation technique of growing silicon carbide crystals is silison carbide ceramics.
摘要翻译： 生长碳化硅单晶的升华技术包括碳化硅源（1）的蒸发表面相对的平行布置和至少一个特定波长的至少一个晶种（2）的生长表面的平行布置，至 限定生长区（4），以及在从晶种（2）朝向源（1）的方向上产生具有轴向梯度的减压和工作温度场，从而提供源（1）的碳化硅的蒸发 ）和晶种（2）的生长表面上的碳化硅的气相结晶。 在其中达到工作温度之前，生长区（4）在此被密封，并且该工艺是用钽中的钽和碳化硅的固溶体及其生长区（4）中存在的化合物进行的。 用于实施生长碳化硅晶体的升华技术的源（1）的材料是硅质碳化物陶瓷。
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