STORAGE DEVICE THAT MAINTAINS A PLURALITY OF LAYERS OF ADDRESS MAPPING

    公开(公告)号:US20180067849A1

    公开(公告)日:2018-03-08

    申请号:US15438687

    申请日:2017-02-21

    发明人: Shinichi KANNO

    IPC分类号: G06F12/02

    摘要: A storage device includes a nonvolatile memory, a cache memory, and a processor. The processor is configured to load, from the nonvolatile memory into the cache memory, a fragment of each of a plurality of layers of an address mapping corresponding to a target logical address to be accessed, and access the nonvolatile memory at a physical address mapped from the target logical address, by referring to the fragments of the layers of the address mapping loaded into the cache memory. The layers are arranged in a hierarchy and each layer of the address mapping except for the lowermost layer indicates correspondence between each of segmented logical address ranges mapped in the layer and a physical location of an immediately-lower layer in which said each segmented logical address range is further mapped in a narrower range. The lowermost layer indicates correspondence between each logical address mapped therein and a physical location of the nonvolatile memory associated therewith.

    MEMORY SYSTEM AND METHOD FOR CONTROLLING NONVOLATILE MEMORY

    公开(公告)号:US20210382648A1

    公开(公告)日:2021-12-09

    申请号:US17406619

    申请日:2021-08-19

    IPC分类号: G06F3/06 G06F12/1009

    摘要: According to one embodiment, a memory system includes a nonvolatile memory and a controller. The controller acquires, from a host, write data having the same first size as a data write unit of the nonvolatile memory and obtained by dividing write data associated with one write command having a first identifier indicating a first write destination block in a plurality of write destination blocks into a plurality of write data or combining write data associated with two or more write commands having the first identifier. The controller writes the acquired write data having the first size to the first write destination block by a first write operation.

    SEMICONDUCTOR MEMORY DEVICE AND METHOD OF CONTROLLING THE SAME

    公开(公告)号:US20210266014A1

    公开(公告)日:2021-08-26

    申请号:US17317280

    申请日:2021-05-11

    摘要: A semiconductor memory device includes a plurality of detecting code generators configured to generate a plurality of detecting codes to detect errors in a plurality of data items, respectively, a plurality of first correcting code generators configured to generate a plurality of first correcting codes to correct errors in a plurality of first data blocks, respectively, each of the first data blocks containing one of the data items and a corresponding detecting code, a second correcting code generators configured to generate a second correcting code to correct errors in a second data block, the second data block containing the first data blocks, and a semiconductor memory configured to nonvolatilely store the second data block, the first correcting codes, and the second correcting code.

    CONTROLLER, DATA STORAGE DEVICE, AND PROGRAM PRODUCT

    公开(公告)号:US20200379901A1

    公开(公告)日:2020-12-03

    申请号:US16995029

    申请日:2020-08-17

    摘要: According to one embodiment, a write instructing unit instructs a data access unit to write, in a storage area of a data storage unit indicated by a first physical address, write object data, instructs a management information access unit to update address conversion information, and instructs a first access unit to update the first physical address. A compaction unit extracts a physical address of compaction object data, instructs the data access unit to read the compaction object data stored in a storage area of the data storage unit indicated by the physical address, instructs the data access unit to write the compaction object data in a storage area of the data storage unit indicated by a second physical address, instructs the management information access unit to update the address conversion information, and instructs a second access unit to update the second physical address.

    MEMORY SYSTEM AND METHOD FOR CONTROLLING NONVOLATILE MEMORY

    公开(公告)号:US20200341681A1

    公开(公告)日:2020-10-29

    申请号:US16928422

    申请日:2020-07-14

    IPC分类号: G06F3/06 G06F12/1009

    摘要: According to one embodiment, a memory system includes a nonvolatile memory and a controller. The controller acquires, from a host, write data having the same first size as a data write unit of the nonvolatile memory and obtained by dividing write data associated with one write command having a first identifier indicating a first write destination block in a plurality of write destination blocks into a plurality of write data or combining write data associated with two or more write commands having the first identifier. The controller writes the acquired write data having the first size to the first write destination block by a first write operation.

    MEMORY SYSTEM AND METHOD FOR CONTROLLING NONVOLATILE MEMORY

    公开(公告)号:US20200241798A1

    公开(公告)日:2020-07-30

    申请号:US16564396

    申请日:2019-09-09

    发明人: Shinichi KANNO

    IPC分类号: G06F3/06

    摘要: According to one embodiment, a memory system receives from a host read commands each designating both of a block address of a read target block and a read target storage location in the read target block, and executes a data read operation in accordance with each of the received read commands. In response to receiving from the host a first command to transition a first block to which data is already written to a reusable state of being reusable as a new write destination block, the memory system determine whether an incomplete read command designating a block address of the first block exists or not. In a case where the incomplete read command exists, the memory system executes the first command after execution of the incomplete read command is completed.

    MEMORY SYSTEM AND METHOD FOR CONTROLLING NONVOLATILE MEMORY

    公开(公告)号:US20200241797A1

    公开(公告)日:2020-07-30

    申请号:US16564376

    申请日:2019-09-09

    发明人: Shinichi KANNO

    IPC分类号: G06F3/06

    摘要: According to one embodiment, a memory system retrieves write data from a write buffer of a host, and executes a write operation of writing the write data to a write destination location of a write destination block selected from a plurality of blocks. In a case where a first read command to designate the write data as read target data is received from the host before the write operation is finished such that the write data becomes readable, the memory system executes a read operation including an operation of reading the read target data from the write buffer of the host and an operation of returning the read target data to the host. The memory system prohibits releasing a region in the write buffer where the write data is stored until execution of the first read command is completed.

    STORAGE DEVICE THAT SECURES A BLOCK FOR A STREAM OR NAMESPACE AND SYSTEM HAVING THE STORAGE DEVICE

    公开(公告)号:US20190138212A1

    公开(公告)日:2019-05-09

    申请号:US16222948

    申请日:2018-12-17

    摘要: A storage device includes a nonvolatile semiconductor memory device including a plurality of physical blocks and a memory controller. The memory controller is configured to associate one or more physical blocks to each of a plurality of stream IDs, execute a first command containing a first stream ID received from a host, by storing write data included in the write IO in the one or more physical blocks associated with the first stream ID, and execute a second command containing a second stream ID received from the host, by selecting a first physical block that includes valid data and invalid data, transfer the valid data stored in the first physical block to a second physical block, and associate the first physical block from which the valid data has been transferred, with the second stream ID.