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公开(公告)号：US09960276B2
公开(公告)日：2018-05-01
申请号：US14764169
申请日：2015-06-23
发明人： Wenhui Li
IPC分类号： H01L27/12 , H01L29/786 , H01L29/24
CPC分类号： H01L29/78618 , H01L27/1225 , H01L27/124 , H01L27/127 , H01L27/1288 , H01L29/24 , H01L29/41733 , H01L29/7869 , H01L29/78696
摘要： The present invention provides an ESL TFT substrate structure and a manufacturing method thereof. In the ESL TFT substrate structure, an etch stop layer (5) includes a first via (51) and a second via (52) formed therein to correspond to two side portions of an oxide semiconductor layer (4). A drain terminal (6) is set in engagement with the oxide semiconductor layer (4) through the first via (51). A passivation protection layer (7) includes a through hole (72) formed therein to extend to and communicate with the second via (52). An electrode layer (8) is formed on the passivation protection layer (7) and has a side portion that is adjacent to the drain terminal (6) and is set in engagement with the oxide semiconductor layer (4) through the through hole (72) and the second via (52) to form a source terminal (81) and an opposite side portion that is extended in a direction away from the drain terminal (6) to form a pixel electrode (82). The ESL TFT substrate structure has a reduced channel length so as to provide the TFT with excellent electrical conduction performance and also to reduce the size of the TFT thereby increasing an aperture ratio of pixels and reducing difficult of pixel design.
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公开(公告)号：US09960195B2
公开(公告)日：2018-05-01
申请号：US14390025
申请日：2014-08-15
发明人： Wenhui Li , Yifan Wang , Chihyu Su , Xiaowen Lv
IPC分类号： H01L27/12
CPC分类号： H01L27/127 , H01L27/1225
摘要： The present invention provides method for manufacturing a TFT backplane and a structure of a TFT backplane. The method includes (1) forming a gate terminal (2) and a first metal electrode M1 on a substrate (1); (2) sequentially forming a gate insulation layer (3), a semiconductor layer, and an etch stop layer on the gate terminal (2), the first metal electrode M1, and the substrate (1) in a successive manner and applying a photolithographic operation to form an island-like semiconductor layer (4) and an island-like etch stop layer (5); (3) applying a photolithographic operation to patternize the island-like etch stop layer (5) and the gate insulation layer (3) to form a plurality of etch stop layer vias (51) and a gate insulation layer via (31); (4) forming source/drain terminals (6) and a second metal electrode M2; (5) forming a passivation protection layer (7); (6) forming a planarization layer (8); (7) forming a pixel electrode layer (9); (8) forming a pixel definition layer (10); and (9) forming a spacer pillar (11).
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公开(公告)号：US09923002B2
公开(公告)日：2018-03-20
申请号：US15591061
申请日：2017-05-09
发明人： Wenhui Li
IPC分类号： H01L27/12 , H01L29/49 , H01L23/535 , H01L29/45 , H01L29/417 , H01L29/423 , H01L27/32
CPC分类号： H01L27/1288 , H01L21/77 , H01L23/535 , H01L27/12 , H01L27/124 , H01L27/1248 , H01L27/1262 , H01L27/3246 , H01L27/3258 , H01L27/3262 , H01L27/3276 , H01L29/41733 , H01L29/42384 , H01L29/45 , H01L29/4908 , H01L51/525 , H01L51/56 , H01L2021/775 , H01L2227/323
摘要： A TFT substrate includes a base plate on which first and second gate electrodes respectively corresponding to first and second TFTs are formed. A gate insulation layer, a semiconductor layer, and an etch stop layer are sequentially formed on the base plate and the first and second electrodes. A single photolithographic process is conducted simultaneously on the gate insulation layer, the semiconductor layer, and the etch stop layer with the same gray tone mask to form separate semiconductor portions for the two TFTs and also form contact holes in the etch stop layer and the gate insulation layer to receive sources and drains of the two TFTs to be deposited therein and in contact with the two semiconductor portions.
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44.发明授权公开(公告)号：US09922995B2
公开(公告)日：2018-03-20
申请号：US15390734
申请日：2016-12-27
发明人： Shimin Ge , Hejing Zhang , Chihyuan Tseng , Chihyu Su , Wenhui Li , Longqiang Shi , Xiaowen Lv
IPC分类号： H01L27/12 , H01L29/786 , H01L29/24 , H01L29/66 , H01L21/02 , H01L29/51 , H01L29/49 , H01L29/45 , G02F1/1368
CPC分类号： H01L27/1225 , G02F1/13439 , G02F1/1368 , G02F2001/133302 , G02F2201/123 , H01L21/02565 , H01L27/124 , H01L27/127 , H01L27/1288 , H01L27/3262 , H01L29/24 , H01L29/45 , H01L29/4908 , H01L29/518 , H01L29/66969 , H01L29/78618 , H01L29/78648 , H01L29/7869 , H01L29/78696
摘要： The present invention provides a manufacture method of an oxide semiconductor TFT substrate and a structure thereof. The manufacture method of the dual gate oxide semiconductor TFT substrate utilizes the halftone mask to implement one photo process, which cannot only accomplish the patterning to the oxide semiconductor layer but also obtain the oxide conductor layer (52′) with ion doping process, and the oxide conductor layer (52′) is employed as being the pixel electrode of the LCD to replace the ITO pixel electrode in prior art; the method manufactures the source (81), the drain (82) and the top gate (71) at the same time with one photo process; the method implements patterning process to the passivation layer (8) and the top gate isolation layer (32) together with one photo process, to reduce the number of the photo processes to nine for shortening the manufacture procedure, raising the production efficiency and lowering the production cost.
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公开(公告)号：US09847503B2
公开(公告)日：2017-12-19
申请号：US15396827
申请日：2017-01-03
发明人： Wenhui Li
CPC分类号： H01L51/5228 , G09G3/32 , H01L27/3246 , H01L27/3258 , H01L27/3262 , H01L27/3276 , H01L2251/308
摘要： An OLED backplate structure is provided. Multiple auxiliary conducting layers contacting a cathode of the OLED are provided under the cathode in order to diminish the electrical resistance of the cathode to thereby enhance the conductivity of the cathode and to even the in plane voltages. The uniformity of the OLED display can be improved to prevent the uneven brightness issue and to decrease the thickness of the cathode for saving the production cost.
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公开(公告)号：US09793411B2
公开(公告)日：2017-10-17
申请号：US14426989
申请日：2014-09-19
发明人： Wenhui Li
IPC分类号： H01L29/786 , H01L29/66
CPC分类号： H01L29/7869 , H01L29/66969 , H01L29/786
摘要： The present invention provides a manufacturing method and a structure of an oxide semiconductor TFT substrate, in which an oxide conductor layer is used to define a channel and a source terminal of an oxide semiconductor TFT substrate. Since the oxide conductor layer is relatively thin and compared to the known techniques, the width of the channel can be made smaller and the width of the channel can be controlled precisely, the difficult of the manufacturing process of the oxide semiconductor TFT substrate can be reduced and the performance of the oxide semiconductor TFT substrate can be enhanced and the yield rate of manufacture can be increased. In a structure of an oxide semiconductor TFT substrate manufactured with the present invention, since the oxide conductor layer and the oxide semiconductor layer are similar in structural composition, excellent ohmic contact can be formed; the oxide semiconductor layer has better capability of inclining upward and the oxide conductor does not cause metal ion contamination in the oxide semiconductor layer; and the oxide conductor is transparent so as to help increase aperture ratio.
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公开(公告)号：US20170141238A1
公开(公告)日：2017-05-18
申请号：US14764169
申请日：2015-06-23
发明人： Wenhui Li
IPC分类号： H01L29/786 , H01L29/24 , H01L27/12
CPC分类号： H01L29/78618 , H01L27/1225 , H01L27/124 , H01L27/127 , H01L27/1288 , H01L29/24 , H01L29/41733 , H01L29/7869 , H01L29/78696
摘要： The present invention provides an ESL TFT substrate structure and a manufacturing method thereof. In the ESL TFT substrate structure, an etch stop layer (5) includes a first via (51) and a second via (52) formed therein to correspond to two side portions of an oxide semiconductor layer (4). A drain terminal (6) is set in engagement with the oxide semiconductor layer (4) through the first via (51). A passivation protection layer (7) includes a through hole (72) formed therein to extend to and communicate with the second via (52). An electrode layer (8) is formed on the passivation protection layer (7) and has a side portion that is adjacent to the drain terminal (6) and is set in engagement with the oxide semiconductor layer (4) through the through hole (72) and the second via (52) to form a source terminal (81) and an opposite side portion that is extended in a direction away from the drain terminal (6) to form a pixel electrode (82). The ESL TFT substrate structure has a reduced channel length so as to provide the TFT with excellent electrical conduction performance and also to reduce the size of the TFT thereby increasing an aperture ratio of pixels and reducing difficult of pixel design.
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公开(公告)号：US20170141140A1
公开(公告)日：2017-05-18
申请号：US14770091
申请日：2015-05-25
发明人： Wenhui Li
IPC分类号： H01L27/12 , H01L29/49 , H01L29/786
CPC分类号： H01L27/1288 , H01L27/1222 , H01L27/1225 , H01L27/127 , H01L29/4908 , H01L29/66969 , H01L29/78648 , H01L29/78663 , H01L29/78672 , H01L29/7869
摘要： The present invention provides a manufacture method of a dual gate TFT substrate and a structure thereof. The manufacture method of a dual gate TFT substrate, comprises sequentially manufacturing a bottom gate (2), a first isolation layer (3), an island shaped semiconductor layer (4), a second isolation layer (5) on a substrate (1) in advance; then, deposing a second metal layer, and implementing patterning process to the second metal layer with one mask to form a source (61), a drain (62) and a top gate (63) at the same time; and then, sequentially manufacturing a third isolation layer (7) and a pixel electrode (8). It can promote the stability of the TFT for reducing the amount of the masks, and shortening the process flow, simplifying the manufacture process and diminishing the production cost. In the structure of the dual gate TFT substrate according to the present invention, the structure is simple, and the stability of the TFT is better, and easy to manufacture.
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公开(公告)号：US20170110527A1
公开(公告)日：2017-04-20
申请号：US14786158
申请日：2015-05-20
发明人： Wenhui Li
CPC分类号： H01L27/1288 , H01L21/77 , H01L23/535 , H01L27/12 , H01L27/124 , H01L27/1248 , H01L27/1262 , H01L27/3246 , H01L27/3258 , H01L27/3262 , H01L27/3276 , H01L29/41733 , H01L29/42384 , H01L29/45 , H01L29/4908 , H01L51/525 , H01L51/56 , H01L2021/775 , H01L2227/323
摘要： The present invention provides a method for manufacturing a TFT substrate and a structure thereof. The method for manufacturing a TFT substrate uses a gray tone mask to apply a single photolithographic process to simultaneously manufacture a gate insulation layer, a semiconductor layer, and a etch stop so as to reduce the number of the photolithographic processes used from ten processes to eight processes and reduce the number of masks used thereby simplifying the manufacturing process and effectively increasing the manufacturing efficiency and the yield rate. The TFT substrate structure of the present invention includes a gate insulation layer, a semiconductor layer, and an etch stop layer that are manufactured at the same time with a photolithographic process by using a gray tone mask so that the structure is simple, the manufacturing is easy, and the manufacturing efficiency and yield rate are effectively increased.
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公开(公告)号：US09601558B2
公开(公告)日：2017-03-21
申请号：US14771203
申请日：2015-06-18
发明人： Wenhui Li
CPC分类号： H01L51/5228 , G09G3/32 , H01L27/3246 , H01L27/3258 , H01L27/3262 , H01L27/3276 , H01L2251/308
摘要： The present invention provides an OLED backplate structure. Multiple auxiliary conducting layers contacting the cathode are provided under the cathode of the OLED, which can diminish the electrical resistance of the cathode to enhance the conductivity of the cathode and to even the in plane voltages. The uniformity of the OLED display can be improved to prevent the uneven brightness issue and to decrease the thickness of the cathode for saving the production cost.
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