公开(公告)号：US11005070B2

公开(公告)日：2021-05-11

申请号：US16704683

申请日：2019-12-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chul Joon Heo ,  Kyung Bae Park ,  Sung Young Yun ,  Tadao Yagi ,  Takkyun Ro ,  Gae Hwang Lee ,  Kwang Hee Lee ,  Yong Wan Jin

IPC: H01L51/52 ,  H01L51/42 ,  H01L27/30 ,  H01L51/00

Abstract: An organic photoelectronic device includes a first electrode and a second electrode facing each other, and first and second photoelectronic conversion layers between the first electrode and the second electrode. The first and second photoelectronic conversion layers include a p-type semiconductor and an n-type semiconductor. The first photoelectronic conversion layer has a first composition ratio (p1/n1) of the p-type semiconductor relative to the n-type semiconductor, the second photoelectronic conversion layer has a second composition ratio (p2/n2) of the p-type semiconductor relative to the n-type semiconductor, and the first composition ratio (p1/n1) is greater than the second composition ratio (p2/n2).

公开(公告)号：US10457694B2

公开(公告)日：2019-10-29

申请号：US15850317

申请日：2017-12-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moon Gyu Han ,  Seon-Jeong Lim ,  Takkyun Ro ,  Kwang Hee Lee ,  Dong-Seok Leem ,  Yong Wan Jin ,  Kyung Bae Park ,  Sung Young Yun ,  Gae Hwang Lee ,  Chul Joon Heo

IPC: H01L51/00 ,  H01L27/30 ,  H01L51/42 ,  C07F5/02

Abstract: A compound may be represented by Chemical Formula 1, an organic photoelectronic device may include a first electrode and a second electrode facing each other with an active layer that includes the compound represented by Chemical Formula 1 between the first electrode and the second electrode, and an image sensor may include the organic photoelectronic device.

公开(公告)号：US10186544B2

公开(公告)日：2019-01-22

申请号：US15283698

申请日：2016-10-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gae Hwang Lee ,  Kwang Hee Lee ,  Kyu Sik Kim ,  Sung Young Yun ,  Dong-Seok Leem ,  Yong Wan Jin

IPC: H01L31/00 ,  H01L27/146

Abstract: An image sensor includes a semiconductor substrate and a photoelectric conversion device on the semiconductor substrate and including a plurality of pixel electrodes, a light absorption layer, and a common electrode. The plurality of pixel electrodes may include a first pixel electrode and a second pixel electrode. The photoelectric conversion device may include a first photoelectric conversion region defined in an overlapping region with the first pixel electrode, the light absorption layer, and the common electrode, and a second photoelectric conversion region defined in an overlapping region with the second pixel electrode, the light absorption layer, and the common electrode. Sensitivity of the first photoelectric conversion region may be higher than sensitivity of the second photoelectric conversion region. An electronic device may include the image sensor.

公开(公告)号：US10084018B2

公开(公告)日：2018-09-25

申请号：US15374550

申请日：2016-12-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gae Hwang Lee ,  Kwang Hee Lee ,  Dong-Seok Leem ,  Yong Wan Jin

IPC: H01L27/30 ,  H01L51/44 ,  H01L27/146

CPC classification number: H01L27/307 ,  H01L27/14625 ,  H01L27/14632 ,  H01L27/14647 ,  H01L51/441

Abstract: An image sensor including a semiconductor substrate integrated with a plurality of photo-sensing devices and a nanopattern layer on the semiconductor substrate, the nanopattern layer having a plurality of nanopatterns, wherein each nanopattern of the plurality of nanopatterns correspond one to one with a single photo-sensing device of the plurality of photo-sensing devices, respectively.

公开(公告)号：US10000462B2

公开(公告)日：2018-06-19

申请号：US14618597

申请日：2015-02-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yeong Suk Choi ,  Kwang Hee Lee ,  Seon-Jeong Lim

IPC: C07D333/50 ,  C07D333/24 ,  H01L51/00 ,  H01L27/30 ,  C07D333/18 ,  C07D409/14 ,  C07D495/04 ,  H01L51/42

CPC classification number: C07D333/24 ,  C07D333/18 ,  C07D409/14 ,  C07D495/04 ,  H01L27/307 ,  H01L51/0036 ,  H01L51/0043 ,  H01L51/0068 ,  H01L51/008 ,  H01L51/42

Abstract: An optoelectronic material includes a first organic molecule and a second organic molecule crosslinked with each other, the first organic molecule and the second organic molecule having wavelength selectivity in a visible ray region.

公开(公告)号：US09871079B2

公开(公告)日：2018-01-16

申请号：US14657133

申请日：2015-03-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gae Hwang Lee ,  Kwang Hee Lee ,  Dong-Seok Leem ,  Yong Wan Jin

IPC: H01L27/30 ,  H01L51/44

CPC classification number: H01L27/307 ,  H01L51/442 ,  H01L2251/305 ,  H01L2251/306 ,  H01L2251/308 ,  Y02E10/549

Abstract: An image sensor includes a semiconductor substrate integrated with at least a photo-sensing device, a plurality of first electrodes disposed on the semiconductor substrate, an organic photoelectric conversion layer disposed on the first electrodes, and a second electrode disposed on the organic photoelectric conversion layer. The first electrodes include a light-transmitting electrode and a metal layer interposed between the semiconductor substrate and the light-transmitting electrode. The organic photoelectric conversion layer disposed on the first electrodes and the photo-sensing device absorb and/or sense light in different wavelength regions from each other. An electronic device including the image sensor is also provided.

公开(公告)号：US20170125485A1

公开(公告)日：2017-05-04

申请号：US15374550

申请日：2016-12-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gae Hwang LEE ,  Kwang Hee Lee ,  Dong-Seok LEEM ,  Yong Wan JIN

IPC: H01L27/30 ,  H01L27/146

CPC classification number: H01L27/307 ,  H01L27/14625 ,  H01L27/14632 ,  H01L27/14647 ,  H01L51/441

Abstract: An image sensor including a semiconductor substrate integrated with a plurality of photo-sensing devices and a nanopattern layer on the semiconductor substrate, the nanopattern layer having a plurality of nanopatterns, wherein each nanopattern of the plurality of nanopatterns correspond one to one with a single photo-sensing device of the plurality of photo-sensing devices, respectively.

公开(公告)号：US09548463B2

公开(公告)日：2017-01-17

申请号：US14587394

申请日：2014-12-31

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tadao Yagi ,  Rie Sakurai ,  Kyung-bae Park ,  Sung Young Yun ,  Gae Hwang Lee ,  Kwang Hee Lee ,  Dong-Seok Leem ,  Xavier Bulliard ,  Chul Joon Heo ,  Yong Wan Jin

IPC: H01L51/00 ,  C07F7/08 ,  H01L27/30 ,  H01L51/44 ,  H01L51/42

CPC classification number: H01L51/0094 ,  C07F7/0834 ,  H01L27/301 ,  H01L27/307 ,  H01L51/0046 ,  H01L51/008 ,  H01L51/4253 ,  H01L51/442 ,  H01L2251/308

Abstract: Example embodiments relate to an organic photoelectronic device including a first electrode and a second electrode facing each other, and an active layer between the first electrode and the second electrode, wherein the active layer includes a first compound represented by the following Chemical Formula 1, and an image sensor including the organic photoelectronic device.

Abstract translation: 示例性实施方案涉及包括第一电极和彼此面对的第二电极的有机光电子器件，以及在第一电极和第二电极之间的有源层，其中活性层包括由以下化学式1表示的第一化合物和 包括有机光电子器件的图像传感器。

公开(公告)号：US09379343B2

公开(公告)日：2016-06-28

申请号：US13957994

申请日：2013-08-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dong Seok Leem ,  Kyu Sik Kim ,  Jung Woo Kim ,  Kyung Bae Park ,  Kwang Hee Lee ,  Seon Jeong Lim

IPC: H01L29/08 ,  H01L51/52 ,  H01L51/44 ,  H01L51/00

CPC classification number: H01L51/442 ,  H01L51/0021 ,  H01L51/5203 ,  H01L51/5215 ,  H01L51/5234 ,  Y02E10/549

Abstract: According to example embodiments, a transmissive electrode may include a light transmission layer. The light transmission layer may include a metal and a metal oxide that is included in a smaller amount than the metal. According to example embodiments, an organic photoelectric device, as well as an image sensor, may include the transmissive electrode.

Abstract translation: 根据示例性实施例，透射电极可以包括光透射层。 光透射层可以包括金属和金属氧化物，其包含在比金属少的量中。 根据示例性实施例，有机光电装置以及图像传感器可以包括透射电极。

公开(公告)号：US12199118B2

公开(公告)日：2025-01-14

申请号：US17483266

申请日：2021-09-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Dong Kyu Lee ,  Dong Min Keum ,  Jun Sung Park ,  Bum Suk Kim ,  Tae Han Kim ,  Kwang Hee Lee ,  Tae Sung Lee

IPC: H01L27/146

Abstract: An image sensor includes a substrate including a first surface on which light is incident and a second surface opposite to the first surface, unit pixels in the substrate, each including a photoelectric conversion layer, color filters on the first surface of the substrate, a grid pattern on the first surface of the substrate defining a respective light receiving area of each of the unit pixels, and microlenses on the color filters, each of the microlenses corresponding to a respective one of the unit pixels, wherein the unit pixels include a first pixel and a second pixel sharing a first color filter which is one of the color filters, and a first light receiving area of the first pixel is different from a second light receiving area of the second pixel.