公开(公告)号：US20200045223A1

公开(公告)日：2020-02-06

申请号：US16597901

申请日：2019-10-10

Applicant: OmniVision Technologies, Inc.

Inventor： Chin Poh Pang ,  Chen-Wei Lu ,  Shao-Fan Kao ,  Chun-Yung Ai ,  Yin Qian ,  Dyson Tai ,  Qingwei Shan ,  Lindsay Grant

IPC: H04N5/232 ,  H01L27/146

Abstract: An image sensor pixel array comprises a plurality of image pixel units to gather image information and a plurality of phase detection auto-focus (PDAF) pixel units to gather phase information. Each of the PDAF pixel units includes two of first image sensor pixels covered by two micro-lenses, respectively. Each of the image pixel units includes four of second image sensor pixels adjacent to each other, wherein each of the second image sensor pixels is covered by an individual micro-lens. A coating layer is disposed on the micro-lenses and forms a flattened surface across the whole image sensor pixel array. A PDAF micro-lens is formed on the coating layer to cover the first image sensor pixels.

公开(公告)号：US20190394389A1

公开(公告)日：2019-12-26

申请号：US16017566

申请日：2018-06-25

Applicant: OmniVision Technologies, Inc.

Inventor： Chen-Wei Lu ,  Yin Qian ,  Dyson Tai ,  Chin Poh Pang ,  Boyang Zhang ,  Cheng Zhao

IPC: H04N5/232 ,  H04N5/341 ,  H01L27/146

Abstract: An image sensor pixel array comprises a plurality of image pixel units to gather image information and a plurality of phase detection auto-focus (PDAF) pixel units to gather phase information. Each of the PDAF pixel units includes two of first image sensor pixels covered by a shared micro-lens. Each of the image pixel units includes four of second image sensor pixels adjacent to each other, wherein each of the second image sensor pixels is covered by an individual micro-lens. A coating layer is disposed on the micro-lenses and forms a flattened surface across the whole image sensor pixel array to receive incident light.

公开(公告)号：US20190333953A1

公开(公告)日：2019-10-31

申请号：US15962943

申请日：2018-04-25

Applicant: OmniVision Technologies, Inc.

Inventor： Cheng Zhao ,  Chen-Wei Lu ,  Zhiqiang Lin ,  Dyson Hsin-Chih Tai

IPC: H01L27/146

Abstract: An image sensor comprises a first photodiode and a second photodiode having a smaller full-well capacitance than the first photodiode, wherein the second photodiode is adjacent to the first photodiode; a first micro-lens is disposed above the first photodiode and on an illuminated side of the image sensor; a second micro-lens is disposed above the second photodiode and on the illuminated side of the image sensor; and a coating layer disposed on both the first and second micro-lens, wherein the coating layer forms a flat top surface on the second micro-lens and a conformal coating layer on the first micro-lens.

公开(公告)号：US20190140005A1

公开(公告)日：2019-05-09

申请号：US15806522

申请日：2017-11-08

Applicant: OmniVision Technologies, Inc.

Inventor： Yin Qian ,  Chen-Wei Lu ,  Jin Li ,  Chia-Chun Miao ,  Ming Zhang ,  Dyson Tai

IPC: H01L27/146

Abstract: A chip scale package (CSP) structure for an image sensor comprises an image sensor chip, wherein the image sensor chip comprises a semiconductor substrate having a top surface to receive light, a plurality of color filters disposed over the top surface, and a plurality of micro lenses disposed on the plurality of color filters. A low refractive index material is disposed over the image sensor chip, wherein the low refractive index material covers the plurality of micro lenses, and wherein a refractive index of the low refractive index material is lower than a refractive index of the plurality of micro lenses. A cover glass is disposed directly on the low refractive index material, wherein no air gap is between the cover glass and the low refractive index material, and between the low refractive index material and the image sensor chip. Therefore, the cover glass is fully supported by the low refractive index material without any dams.

公开(公告)号：US10211243B2

公开(公告)日：2019-02-19

申请号：US15945541

申请日：2018-04-04

Applicant: OmniVision Technologies, Inc.

Inventor： Chia-Chun Miao ,  Yin Qian ,  Chao-Hung Lin ,  Chen-Wei Lu ,  Dyson H. Tai ,  Ming Zhang ,  Jin Li

IPC: H01L31/0203 ,  H01L27/146

Abstract: A method of image sensor package fabrication includes providing an image sensor, including a pixel array disposed in a semiconductor material, and a first transparent shield adhered to the semiconductor material. The pixel array is disposed between the semiconductor material and the first transparent shield. A light blocking layer is deposited and disposed between lateral edges of the pixel array and lateral edges of the first transparent shield, and a second transparent shield is placed on the image sensor package, where the light blocking layer is disposed between the first transparent shield and the second transparent shield.

公开(公告)号：US20190019832A1

公开(公告)日：2019-01-17

申请号：US15666086

申请日：2017-08-01

Applicant: OmniVision Technologies, Inc.

Inventor： Cheng Zhao ,  Cunyu Yang ,  Chen-Wei Lu ,  Zhiqiang Lin

IPC: H01L27/146 ,  H04N5/33 ,  H01L27/148

Abstract: An image sensor comprises a semiconductor material having an illuminated surface and a non-illuminated surface; a photodiode formed in the semiconductor material extending from the illuminated surface to receive an incident light through the illuminated surface, wherein the received incident light generates charges in the photodiode; a transfer gate electrically coupled to the photodiode to transfer the generated charges from the photodiode in response to a transfer signal; a floating diffusion electrically coupled to the transfer gate to receive the transferred charges from the photodiode; and a near infrared (NIR) quantum efficiency (QE) and modulation transfer function(MTF) enhancement structure. The NIR QE and MTF enhancement structure comprises: a NIR QE enhancement sub-structure comprising at least one NIR QE enhancement elements within a photosensitive region of the photodiode, wherein the NIR QE enhancement sub-structure is configured to modify the incident light at the illuminated surface of the semiconductor material by at least one of diffraction, deflection and reflection, to redistribute the incident light within the photodiode to improve optical sensitivity, including NIR light sensitivity, of the image sensor; and a MTF enhancement sub-structure disposed on the non-illuminated surface of the semiconductor material, facing toward the NIR QE enhancement sub-structure, wherein the MTF enhancement structure has a geometry corresponding to the NIR QE enhancement sub-structure, to ensure the incident light is still within the photodiode after redistribution.

公开(公告)号：US20180226448A1

公开(公告)日：2018-08-09

申请号：US15945541

申请日：2018-04-04

Applicant: OmniVision Technologies, Inc.

Inventor： Chia-Chun Miao ,  Yin Qian ,  Chao-Hung Lin ,  Chen-Wei Lu ,  Dyson H. Tai ,  Ming Zhang ,  Jin Li

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14685 ,  H01L27/14687

Abstract: A method of image sensor package fabrication includes providing an image sensor, including a pixel array disposed in a semiconductor material, and a first transparent shield adhered to the semiconductor material. The pixel array is disposed between the semiconductor material and the first transparent shield. A light blocking layer is deposited and disposed between lateral edges of the pixel array and lateral edges of the first transparent shield, and a second transparent shield is placed on the image sensor package, where the light blocking layer is disposed between the first transparent shield and the second transparent shield.

公开(公告)号：US09966404B2

公开(公告)日：2018-05-08

申请号：US15430071

申请日：2017-02-10

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Chia-Chun Miao ,  Yin Qian ,  Chao-Hung Lin ,  Chen-Wei Lu ,  Dyson H. Tai ,  Ming Zhang ,  Jin Li

IPC: H01L31/0203 ,  H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14685 ,  H01L27/14687

Abstract: An image sensor package includes an image sensor with a pixel array disposed in a semiconductor material. A first transparent shield is adhered to the semiconductor material, and the pixel array is disposed between the semiconductor material and the first transparent shield. The image sensor package further includes a second transparent shield, where the first transparent shield is disposed between the pixel array and the second transparent shield. A light blocking layer is disposed between the first transparent shield and the second transparent shield, and the light blocking layer is disposed to prevent light from reflecting off edges of the first transparent shield into the pixel array.

公开(公告)号：US09955090B2

公开(公告)日：2018-04-24

申请号：US15215139

申请日：2016-07-20

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Dajiang Yang ,  Gang Chen ,  Oray Orkun Cellek ,  Xin Wang ,  Chen-Wei Lu ,  Duli Mao ,  Dyson H. Tai

IPC: H04N5/355 ,  H04N9/04 ,  H04N5/378 ,  H01L27/146

CPC classification number: H04N5/35563 ,  H01L27/14609 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14643 ,  H04N5/37457 ,  H04N5/378 ,  H04N9/045

Abstract: An image sensor includes a plurality of photodetectors that are identically sized and fabricated in semiconductor material with identical semiconductor processing conditions. The photodetectors are organized into virtual high-low sensitivity groupings, each including a first photodetector and a second photodetector. A plurality of attenuators is disposed over the semiconductor material. Each one of the plurality of attenuators is disposed along an optical path between a microlens and the first photodetector of each virtual high-low sensitivity grouping such that all incident light directed into the first photodetector is directed through a respective one of the plurality of attenuators. There is no attenuator along a second optical path between a microlens and the second photodetector of each virtual high-low sensitivity grouping such that all the incident light directed into the second photodetector is not directed through one of the plurality of attenuators.

公开(公告)号：US20180084185A1

公开(公告)日：2018-03-22

申请号：US15273338

申请日：2016-09-22

Applicant: OmniVision Technologies, Inc.

Inventor： Chen-Wei Lu ,  Yin Qian ,  Dyson H. Tai

IPC: H04N5/232 ,  H04N5/225 ,  G02B3/00 ,  G02B5/20 ,  G02B7/36 ,  G03B13/36

CPC classification number: H04N5/23212 ,  G02B3/0018 ,  G02B3/0056 ,  G02B5/20 ,  G02B7/36 ,  G03B13/36 ,  H04N5/2253 ,  H04N5/2254 ,  H04N5/3696

Abstract: A PDAF imaging system includes an image sensor and an image data processing unit. The image sensor has an asymmetric-microlens PDAF detector that includes: (a) a plurality of pixels forming a sub-array having at least two rows and two columns, and (b) a microlens located above each of the plurality of pixels and being rotationally asymmetric about an axis perpendicular to the sub-array. The axis intersects a local extremum of a top surface of the microlens. The image data processing unit is capable of receiving electrical signals from each of the plurality of pixels and generating a PDAF signal from the received electrical signals. A method for forming a gull-wing microlens includes forming, on a substrate, a plate having a hole therein. The method also includes reflowing the plate.