公开(公告)号：US07056775B2

公开(公告)日：2006-06-06

申请号：US11172908

申请日：2005-07-05

申请人： Hongyong Zhang ,  Hideto Ohnuma ,  Yasuhiko Takemura

发明人： Hongyong Zhang ,  Hideto Ohnuma ,  Yasuhiko Takemura

IPC分类号： H01L21/786

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/2022 ,  H01L21/3221 ,  H01L27/1277 ,  H01L29/66757 ,  Y10S148/004 ,  Y10S148/016 ,  Y10S148/06

摘要： After a pattern is transferred on silicon film crystallized by annealing, the silicon film is annealed by radiation of intense rays for a short time. Especially, in the crystallizing process by annealing, an element which promotes crystallization such as nickel is doped therein. The area not crystallized by annealing is also crystallized by radiation of intense rays and a condensed silicon film is formed.After a metal element which promotes crystallization is doped, annealing by light for a short time is performed by radiating intense rays onto the silicon film crystallized by annealing in an atmosphere containing halide. After the surface of the silicon film is oxidized by heating or by radiating intense rays in a halogenated atmosphere and an oxide film is formed on the silicon film, the oxide film is then etched. As a result, nickel in the silicon film is removed.

公开(公告)号：US20060014335A1

公开(公告)日：2006-01-19

申请号：US11224047

申请日：2005-09-13

申请人： Hideto Ohnuma ,  Ichiro Uehara

发明人： Hideto Ohnuma ,  Ichiro Uehara

IPC分类号： H01L21/84

CPC分类号： H01L27/1288 ,  H01L21/28114 ,  H01L21/32136 ,  H01L21/32139 ,  H01L27/1214 ,  H01L29/42384 ,  H01L29/66598 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L2029/7863 ,  Y10S438/949

摘要： Formation of LDD structures and GOLD structures in a semiconductor device is conventionally performed in a self aligning manner with gate electrodes as masks, but there are many cases in which the gate electrodes have two layer structures, and film formation processes and etching processes become complex. Further, in order to perform formation of LDD structures and GOLD structures only by processes such as dry etching, the transistor structures all have the same structure, and it is difficult to form LDD structures, GOLD structures, and single drain structures separately for different circuits. By applying a photolithography process for forming gate electrodes to photomasks or reticles, in which supplemental patterns having a function of reducing the intensity of light and composed of diffraction grating patterns or translucent films, are established, GOLD structure, LDD structure, and single drain structure transistors can be easily manufactured for different circuits through dry etching and ion injection process steps.

公开(公告)号：US20050245053A1

公开(公告)日：2005-11-03

申请号：US11172908

申请日：2005-07-05

申请人： Hongyong Zhang ,  Hideto Ohnuma ,  Yasuhico Takemura

发明人： Hongyong Zhang ,  Hideto Ohnuma ,  Yasuhico Takemura

IPC分类号： H01L21/20 ,  H01L21/322 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/02675 ,  H01L21/2022 ,  H01L21/3221 ,  H01L27/1277 ,  H01L29/66757 ,  Y10S148/004 ,  Y10S148/016 ,  Y10S148/06

摘要： After a pattern is transferred on silicon film crystallized by annealing, the silicon film is annealed by radiation of intense rays for a short time. Especially, in the crystallizing process by annealing, an element which promotes crystallization such as nickel is doped therein. The area not crystallized by annealing is also crystallized by radiation of intense rays and a condensed silicon film is formed. After a metal element which promotes crystallization is doped, annealing by light for a short time is performed by radiating intense rays onto the silicon film crystallized by annealing in an atmosphere containing halide. After the surface of the silicon film is oxidized by heating or by radiating intense rays in a halogenated atmosphere and an oxide film is formed on the silicon film, the oxide film is then etched. As a result, nickel in the silicon film is removed.

公开(公告)号：US20050142705A1

公开(公告)日：2005-06-30

申请号：US11064821

申请日：2005-02-25

申请人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara ,  Hongyong Zhang ,  Atsunori Suzuki ,  Hideto Ohnuma ,  Naoaki Yamaguchi ,  Hideomi Suzawa ,  Hideki Uochi ,  Yasuhiko Takemura

发明人： Toshimitsu Konuma ,  Akira Sugawara ,  Yukiko Uehara ,  Hongyong Zhang ,  Atsunori Suzuki ,  Hideto Ohnuma ,  Naoaki Yamaguchi ,  Hideomi Suzawa ,  Hideki Uochi ,  Yasuhiko Takemura

IPC分类号： H01L21/311 ,  H01L21/316 ,  H01L21/321 ,  H01L21/336 ,  H01L27/12 ,  H01L29/45 ,  H01L29/786 ,  H01L21/00 ,  H01L21/84

CPC分类号： H01L29/665 ,  H01L21/02145 ,  H01L21/02244 ,  H01L21/02258 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/31683 ,  H01L21/31687 ,  H01L21/321 ,  H01L27/124 ,  H01L27/127 ,  H01L29/458 ,  H01L29/66598 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627

摘要： A TFT formed on an insulating substrate source, drain and channel regions, a gate insulating film formed on at least the channel region and a gate electrode formed on the gate insulating film. Between the channel region and the drain region, a region having a higher resistivity is provided in order to reduce an Ioff current. A method for forming this structure comprises the steps of anodizing the gate electrode to form a porous anodic oxide film on the side of the gate electrode; removing a portion of the gate insulating using the porous anodic oxide film as a mask so that the gate insulating film extends beyond the gate electrode but does not completely cover the source and drain regions. Thereafter, an ion doping of one conductivity element is performed. The high resistivity region is defined under the gate insulating film.

公开(公告)号：US20050074987A1

公开(公告)日：2005-04-07

申请号：US10968093

申请日：2004-10-20

申请人： Shunpei Yamazaki ,  Satoshi Murakami ,  Hideto Ohnuma ,  Osamu Nakamura ,  Koichiro Tanaka ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Satoshi Murakami ,  Hideto Ohnuma ,  Osamu Nakamura ,  Koichiro Tanaka ,  Yasuyuki Arai

IPC分类号： H01L21/00 ,  H01L21/268 ,  H01L21/322 ,  H01L21/336 ,  H01L21/77 ,  H01L21/84 ,  H01L27/12 ,  H01L29/786 ,  H01L29/00

CPC分类号： H01L21/268 ,  H01L21/3226 ,  H01L21/67103 ,  H01L21/67115 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78633 ,  H01L2029/7863

摘要： The present invention is characterized in that gettering is performed such that impurity regions to which a noble gas element is added are formed in a semiconductor film and the metallic element included in the semiconductor film is segregated into the impurity regions by laser annealing. Also, a reflector is provided under a substrate on which a semiconductor film is formed. When laser light transmitted through the semiconductor film substrate is irradiated from the front side of the substrate, the laser beam is reflected by the reflector and thus the laser light can be irradiated to the semiconductor film from the read side thereof. Laser light can be also irradiated to low concentration impurity regions overlapped with a portion the gate electrode. Thus, an effective energy density in the semiconductor film is increased to thereby effect recovery of crystallinity and activation of the impurity element.

摘要翻译： 本发明的特征在于，在半导体膜中形成添加有惰性气体元素的杂质区域的吸气，通过激光退火将包含在半导体膜中的金属元素分离成杂质区域。 另外，在形成有半导体膜的基板的下方设置有反射体。 当透过半导体薄膜基板的激光从基板的正面照射时，激光束被反射体反射，因此激光可以从其读出侧照射到半导体薄膜上。 激光也可以照射到与栅电极的一部分重叠的低浓度杂质区域。 因此，半导体膜中的有效能量密度增加，从而实现结晶性的恢复和杂质元素的活化。

公开(公告)号：US20050020037A1

公开(公告)日：2005-01-27

申请号：US10835072

申请日：2004-04-30

申请人： Taketomi Asami ,  Mitsuhiro Ichijo ,  Noriyoshi Suzuki ,  Hideto Ohnuma ,  Masato Yonezawa

发明人： Taketomi Asami ,  Mitsuhiro Ichijo ,  Noriyoshi Suzuki ,  Hideto Ohnuma ,  Masato Yonezawa

IPC分类号： H01L21/205 ,  C23C16/02 ,  C23C16/24 ,  C30B1/02 ,  H01L21/20 ,  H01L21/322 ,  H01L21/336 ,  H01L29/786

CPC分类号： H01L29/78636 ,  C23C16/0272 ,  C23C16/24 ,  C30B1/023 ,  C30B29/06 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02491 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02672 ,  H01L21/3221 ,  H01L29/66757 ,  H01L29/78621

摘要： A semiconductor film having a crystalline structure is formed by using a metal element that assists the crystallization of the semiconductor film, and the metal element remaining in the film is effectively removed to decrease the dispersion among the elements. The semiconductor film or, typically, an amorphous silicon film having an amorphous structure is obtained based on the plasma CVD method as a step of forming a gettering site, by using a monosilane, a rare gas element and hydrogen as starting gases, the film containing the rare gas element at a high concentration or, concretely, at a concentration of 1×1020/cm3 to 1×1021/cm3 and containing fluorine at a concentration of 1×1015/cm3 to 1×1017/cm3.

摘要翻译： 通过使用有助于半导体膜的结晶化的金属元素形成具有晶体结构的半导体膜，并且有效地去除留在膜中的金属元素以降低元件之间的分散。 通过使用甲硅烷，稀有气体元素和氢作为起始气体，通过等离子体CVD法作为形成吸杂位置的工序，得到半导体膜，或通常为非晶质的硅膜， 高浓度的稀有气体元素，或具体地，浓度为1×10 20 / cm 3至1×10 21 / cm 3，并且含有浓度为1×10 15 / cm 3的氟 > 1×10 17 / cm 3。

公开(公告)号：US06809012B2

公开(公告)日：2004-10-26

申请号：US10034498

申请日：2002-01-03

申请人： Shunpei Yamazaki ,  Satoshi Murakami ,  Hideto Ohnuma ,  Osamu Nakamura ,  Koichiro Tanaka ,  Yasuyuki Arai

发明人： Shunpei Yamazaki ,  Satoshi Murakami ,  Hideto Ohnuma ,  Osamu Nakamura ,  Koichiro Tanaka ,  Yasuyuki Arai

IPC分类号： H01L2947

CPC分类号： H01L21/268 ,  H01L21/3226 ,  H01L21/67103 ,  H01L21/67115 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78621 ,  H01L29/78633 ,  H01L2029/7863

摘要： The present invention is characterized in that gettering is performed such that impurity regions to which a noble gas element is added are formed in a semiconductor film and the metallic element included in the semiconductor film is segregated into the impurity regions by laser annealing. Also, a reflector is provided under a substrate on which a semiconductor film is formed. When laser light transmitted through the semiconductor film substrate is irradiated from the front side of the substrate, the laser beam is reflected by the reflector and thus the laser light can be irradiated to the semiconductor film from the read side thereof. Laser light can be also irradiated to low concentration impurity regions overlapped with a portion the gate electrode. Thus, an effective energy density in the semiconductor film is increased to thereby effect recovery of crystallinity and activation of the impurity element.

摘要翻译： 本发明的特征在于，在半导体膜中形成添加有惰性气体元素的杂质区域的吸气，通过激光退火将包含在半导体膜中的金属元素分离成杂质区域。 另外，在形成有半导体膜的基板的下方设置有反射体。 当透过半导体薄膜基板的激光从基板的正面照射时，激光束被反射体反射，因此激光可以从其读出侧照射到半导体薄膜上。 激光也可以照射到与栅电极的一部分重叠的低浓度杂质区域。 因此，半导体膜中的有效能量密度增加，从而实现结晶性的恢复和杂质元素的活化。

公开(公告)号：US06808968B2

公开(公告)日：2004-10-26

申请号：US10074050

申请日：2002-02-14

申请人： Shunpei Yamazaki ,  Osamu Nakamura ,  Masayuki Kajiwara ,  Junichi Koezuka ,  Koji Dairiki ,  Toru Mitsuki ,  Toru Takayama ,  Hideto Ohnuma ,  Taketomi Asami ,  Mitsuhiro Ichijo

发明人： Shunpei Yamazaki ,  Osamu Nakamura ,  Masayuki Kajiwara ,  Junichi Koezuka ,  Koji Dairiki ,  Toru Mitsuki ,  Toru Takayama ,  Hideto Ohnuma ,  Taketomi Asami ,  Mitsuhiro Ichijo

IPC分类号： H01L2100

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/3221 ,  H01L27/12 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78633 ,  H01L29/78645 ,  H01L29/78675 ,  H01L29/78678

摘要： It is intended to achieve the reduction in number of heat treatments carried out at high temperature (at least 600° C.) and the employment of lower temperature processes (600° C. or lower), and to achieve step simplification and throughput improvement. In the present invention, a barrier layer (105), a second semiconductor film (106), and a third semiconductor layer (108) containing an impurity element (phosphorus) that imparts one conductive type are formed on a first semiconductor film (104) having a crystalline structure. Gettering is carried out in which the metal element contained in the first semiconductor film (104) is allowed to pass through the barrier layer (105) and the second semiconductor film (106) by a heat treatment to move into the third semiconductor film (107). Afterward, the second and third semiconductor films (106) and (107) are removed with the barrier layer (105) used as an etching stopper.

摘要翻译： 旨在实现在高温（至少600℃）下进行的热处理和使用较低温度工艺（600℃或更低）的热处理数量的减少，并且实现步骤简化和生产量提高。 在本发明中，在第一半导体膜（104）上形成有阻挡层（105），第二半导体膜（106）和含有赋予一种导电类型的杂质元素（磷）的第三半导体层（108） 具有晶体结构。 进行吸收，其中包含在第一半导体膜（104）中的金属元素被允许通过热处理通过阻挡层（105）和第二半导体膜（106）以移动到第三半导体膜（107） ）。 之后，第二和第三半导体膜（106）和（107）被用作蚀刻停止层的阻挡层（105）去除。

公开(公告)号：US06743700B2

公开(公告)日：2004-06-01

申请号：US10155986

申请日：2002-05-29

申请人： Taketomi Asami ,  Mitsuhiro Ichijo ,  Noriyoshi Suzuki ,  Hideto Ohnuma ,  Masato Yonezawa

发明人： Taketomi Asami ,  Mitsuhiro Ichijo ,  Noriyoshi Suzuki ,  Hideto Ohnuma ,  Masato Yonezawa

IPC分类号： H01L21322

CPC分类号： H01L29/78636 ,  C23C16/0272 ,  C23C16/24 ,  C30B1/023 ,  C30B29/06 ,  H01L21/0237 ,  H01L21/02422 ,  H01L21/02491 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02672 ,  H01L21/3221 ,  H01L29/66757 ,  H01L29/78621

摘要： A semiconductor film having a crystalline structure is formed by using a metal element that assists the crystallization of the semiconductor film, and the metal element remaining in the film is effectively removed to decrease the dispersion among the elements. The semiconductor film or, typically, an amorphous silicon film having an amorphous structure is obtained based on the plasma CVD method as a step of forming a gettering site, by using a monosilane, a rare gas element and hydrogen as starting gases, the film containing the rare gas element at a high concentration or, concretely, at a concentration of 1×1020/cm3 to 1×1021/cm3 and containing fluorine at a concentration of 1×1015/cm3 to 1×1017/cm3.

摘要翻译： 通过使用有助于半导体膜的结晶化的金属元素形成具有晶体结构的半导体膜，并且有效地去除留在膜中的金属元素以降低元件之间的分散。 通过使用甲硅烷，稀有气体元素和氢作为起始气体，通过等离子体CVD法作为形成吸杂位置的工序，得到半导体膜，或通常为非晶质的硅膜， 高浓度的稀有气体元素，或具体地，浓度为1×10 20 / cm 3至1×10 21 / cm 3，并且含有浓度为1×10 15 / cm 3的氟 > 1×10 17 / cm 3。

公开(公告)号：US06709906B2

公开(公告)日：2004-03-23

申请号：US09739268

申请日：2000-12-19

申请人： Naoaki Yamaguchi ,  Hongyong Zhang ,  Satoshi Teramoto ,  Hideto Ohnuma

发明人： Naoaki Yamaguchi ,  Hongyong Zhang ,  Satoshi Teramoto ,  Hideto Ohnuma

IPC分类号： H01L2184

CPC分类号： H01L27/127 ,  H01L21/3003 ,  H01L27/1214 ,  H01L29/66757 ,  Y10S438/91

摘要： In producing a semiconductor device such as a thin film transistor (TFT), a silicon semiconductor film is formed on a substrate having an insulating surface, such as a glass substrate, and then a silicon nitride film is formed on the silicon semiconductor film. After that, a hydrogen ion, fluorine ion, or chlorine ion is introduced into the silicon semiconductor film through the silicon nitride film, and then the silicon semiconductor film into which an ion is introduced is heated in an atmosphere containing hydrogen, fluorine, chlorine or these mixture, to neutralize dangling bonds in the silicon semiconductor film and reduce levels in the silicon semiconductor film.

摘要翻译： 在制造诸如薄膜晶体管（TFT）的半导体器件中，在具有绝缘表面的衬底（例如玻璃衬底）上形成硅半导体膜，然后在硅半导体膜上形成氮化硅膜。 之后，通过氮化硅膜将氢离子，氟离子或氯离子引入硅半导体膜，然后在其中引入离子的硅半导体膜在含有氢，氟，氯或 这些混合物，以中和硅半导体膜中的悬挂键并降低硅半导体膜中的水平。