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公开(公告)号：US20180149315A1
公开(公告)日：2018-05-31
申请号：US15574617
申请日：2016-05-16
Applicant: ENTEGRIS, INC.
Inventor： Joseph R. DESPRES , Barry Lewis CHAMBERS , Joseph D. Sweeney , Richard S. RAY , Steven E. BISHOP
CPC classification number: F17C7/00 , F17C11/00 , F17C13/00 , F17C13/025 , F17C13/026 , F17C13/084 , F17C2205/0107 , F17C2205/0142 , F17C2205/0176 , F17C2221/03 , F17C2223/0123 , F17C2225/0123 , F17C2227/0107 , F17C2227/042 , F17C2250/032 , F17C2250/043 , F17C2250/0439 , F17C2250/0443 , F17C2250/0447 , F17C2250/0626 , F17C2250/0631 , F17C2270/0518 , H01L21/67 , H01L21/67017
Abstract: Gas supply systems and methods are described for delivery of gas to gas-utilizing process tools, e.g., gas-utilizing tools for manufacturing of semiconductor products, flat-panel displays, solar panels, etc. The gas supply systems may comprise gas cabinets that are arranged with adsorbent-based and/or interiorly pressure-regulated gas supply vessels therein, and a gas mixing manifold is described, which may be disposed in the gas cabinet or operated in a standalone fashion. In one aspect, gas supply systems are described in which vessels susceptible to cooling involving diminution of gas supply pressure are processed after pressure-controlled termination of dispensing operation, for dispensing operation achieving utilization of gas remaining in the vessel after such termination.
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42.发明申请公开(公告)号：US20170330756A1
公开(公告)日：2017-11-16
申请号：US15664554
申请日：2017-07-31
Applicant: Entegris, Inc.
Inventor： Robert Kaim , Joseph D. Sweeney , Anthony M. Avila , Richard S. Ray
IPC: H01L21/22 , H01J37/08 , H01J37/317 , H01L21/265 , H01L21/223 , F17C7/00 , H01J37/30
CPC classification number: H01L21/2225 , F17C7/00 , H01J37/08 , H01J37/3002 , H01J37/3171 , H01J2237/022 , H01J2237/304 , H01L21/223 , H01L21/26506 , Y02E60/321 , Y10T428/13
Abstract: An ion implantation system and process, in which the performance and lifetime of the ion source of the ion implantation system are enhanced, by utilizing isotopically enriched dopant materials, or by utilizing dopant materials with supplemental gas(es) effective to provide such enhancement.
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公开(公告)号：US09764298B2
公开(公告)日：2017-09-19
申请号：US14940278
申请日：2015-11-13
Applicant: Entegris, Inc.
Inventor： Oleg Byl , Edward E. Jones , Chiranjeevi Pydi , Joseph D. Sweeney
CPC classification number: B01J8/0285 , B01J8/0465 , B01J2208/00017 , B01J2208/00389 , B01J2208/00433 , B01J2208/00539 , C01B35/061
Abstract: An apparatus is described, as including a reaction region for contacting a reactant gas with a reactive solid under conditions effective to form an intermediate product, and an opening for allowing an unreacted portion of the gaseous reagent and the intermediate product to exit the reaction region. The apparatus can be beneficially employed to form a final product as a reaction product of the intermediate product and the reactant gas. The reaction of the reactant gas and reactive solid can be conducted in a first reaction zone, with the reaction of the reactant gas and intermediate product conducted in a second reaction zone. In a specific implementation, the reaction of the reactant gas and intermediate product is reversible, and the reactant gas and intermediate product are flowed to the second reaction zone at a controlled rate or in a controlled manner, to suppress back reaction forming the reactive solid.
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44.发明授权公开(公告)号：US09754786B2
公开(公告)日：2017-09-05
申请号：US14691904
申请日：2015-04-21
Applicant: Entegris, Inc.
Inventor： Robert Kaim , Joseph D. Sweeney , Anthony M. Avila , Richard S. Ray
IPC: H01J27/22 , H01L21/22 , H01J37/08 , H01J37/317 , F17C7/00 , H01L21/265 , H01J37/30 , H01L21/223
CPC classification number: H01L21/2225 , F17C7/00 , H01J37/08 , H01J37/3002 , H01J37/3171 , H01J2237/022 , H01J2237/304 , H01L21/223 , H01L21/26506 , Y02E60/321 , Y10T428/13
Abstract: An ion implantation system and process, in which the performance and lifetime of the ion source of the ion implantation system are enhanced, by utilizing isotopically enriched dopant materials, or by utilizing dopant materials with supplemental gas(es) effective to provide such enhancement.
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公开(公告)号：US20170248275A1
公开(公告)日：2017-08-31
申请号：US15516576
申请日：2015-10-01
Applicant: Entegris, Inc.
Inventor： Joseph R. Despres , Joseph D. Sweeney , Anthony M. Avila
CPC classification number: F17C13/04 , F16K17/00 , F17C1/00 , F17C2201/058 , F17C2205/0111 , F17C2205/0323 , F17C2205/0338 , F17C2205/035 , F17C2205/0391 , F17C2225/0123 , F17C2270/0518 , G05D16/0619 , H01L21/02 , H01L21/306
Abstract: A gas storage and dispensing vessel, including a vessel container definishing a gas storage interior volume, and a valve head regulator assembly secured to the vessel container, the valve head regulator assembly including a single gas pressure regulator disposed in the interior volume of the vessel container, and a valve head including a pneumatic flow control valve, wherein the single regulator is configured with a set point pressure of at least 0.5 MPa, and wherein the interior volume of the vessel container is at least 5 L.
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Patent Agency Ranking
46.发明授权公开(公告)号：US09171725B2
公开(公告)日：2015-10-27
申请号：US14331092
申请日：2014-07-14
Applicant: Entegris, Inc.
Inventor： James J. Mayer , Richard S. Ray , Robert Kaim , Joseph D. Sweeney
IPC: H01L21/265 , H01L21/302 , H01J37/08 , H01J37/317
CPC classification number: H01L21/2658 , C09K3/00 , H01J37/08 , H01J37/3171 , H01J2237/022 , H01J2237/304 , H01L21/26506 , H01L21/302
Abstract: Isotopically enriched silicon precursor compositions are disclosed, as useful in ion implantation to enhance performance of the ion implantation system, in relation to corresponding ion implantation lacking such isotopic enrichment of the silicon precursor composition. The silicon dopant composition includes at least one silicon compound that is isotopically enriched above natural abundance in at least one of 28Si, 29Si, and 30Si, and may include a supplemental gas including at least one of a co-species gas and a diluent gas. Dopant gas supply apparatus for providing such silicon dopant compositions to an ion implanter are described, as well as ion implantation systems including such dopant gas supply apparatus.
Abstract translation: 公开了同位素富集的硅前体组合物，用于离子注入以提高离子注入系统的性能，与相对于缺乏硅前体组合物的同位素富集的离子注入相关。 所述硅掺杂剂组合物包括在28Si，29Si和30Si中的至少一种中同位素富集的至少一种硅化合物，并且可以包括包括共同种类气体和稀释气体中的至少一种的补充气体。 描述了用于将离子注入机提供这种硅掺杂剂组合物的掺杂气体供应装置，以及包括这种掺杂剂气体供应装置的离子注入系统。
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47.发明申请METHOD AND APPARATUS FOR ENHANCED LIFETIME AND PERFORMANCE OF ION SOURCE IN AN ION IMPLANTATION SYSTEM 有权用于增强离子植入系统中离子源的生命寿命和性能的方法和装置公开(公告)号：US20140326896A1
公开(公告)日：2014-11-06
申请号：US14338132
申请日：2014-07-22
Applicant: Entegris, Inc.
Inventor： Robert Kaim , Joseph D. Sweeney , Anthony M. Avila , Richard S. Ray
CPC classification number: H01L21/2225 , F17C7/00 , H01J37/08 , H01J37/3002 , H01J37/3171 , H01J2237/022 , H01J2237/304 , H01L21/223 , H01L21/26506 , Y02E60/321 , Y10T428/13
Abstract: An ion implantation system and process, in which the performance and lifetime of the ion source of the ion implantation system are enhanced, by utilizing isotopically enriched dopant materials, or by utilizing dopant materials with supplemental gas(es) effective to provide such enhancement.
Abstract translation: 通过利用同位素富集的掺杂剂材料，或通过利用具有有效提供这种增强作用的补充气体的掺杂剂材料，离子注入系统和工艺，离子注入系统的离子源的性能和寿命得到增强。
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公开(公告)号：US10247363B2
公开(公告)日：2019-04-02
申请号：US15549875
申请日：2016-02-12
Applicant: ENTEGRIS, INC.
Inventor： Joseph D. Sweeney , Edward E. Jones , Joseph R. Despres , Richard S. Ray , Peter C. Van Buskirk , Edward A. Sturm , Chris Scannell
Abstract: A fluid supply package is described, which includes a fluid storage and dispensing vessel, and a fluid dispensing assembly coupled to the vessel and configured to enable discharge of fluid from the vessel under dispensing conditions, wherein the fluid supply package includes an informational augmentation device thereon, e.g., at least one of a quick read (QR) code and an RFID tag, for informational augmentation of the package. Process systems are described including process tools and one or more fluid supply packages of the foregoing type, wherein the process tool is configured for communicative interaction with the fluid supply package(s). Various communicative arrangements are described, which are usefully employed to enhance the efficiency and operation of process systems in which fluid supply packages of the foregoing type are employed.
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公开(公告)号：US20190071313A1
公开(公告)日：2019-03-07
申请号：US15899692
申请日：2018-02-20
Applicant: Entegris, Inc.
Inventor： Oleg Byl , Edward E. Jones , Chiranjeevi Pydi , Joseph D. Sweeney
Abstract: A reaction system and method for preparing compounds or intermediates from solid reactant materials is provided. In a specific aspect, a reaction system and methods are provided for preparation of boron-containing precursor compounds useful as precursors for ion implantation of boron in substrates. In another specific aspect, a reactor system and methods are provided for manufacture of boron precursors such as B2F4.
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公开(公告)号：US09938156B2
公开(公告)日：2018-04-10
申请号：US14350543
申请日：2012-10-09
Applicant: Entegris, Inc.
Inventor： Oleg Byl , Edward E. Jones , Chiranjeevi Pydi , Joseph D. Sweeney
CPC classification number: C01B35/061 , B01J3/03 , B01J7/00 , B01J15/00 , B01J19/0073 , B01J19/129 , B01J2219/00094 , B01J2219/00148 , B01J2219/0254 , B01J2219/0272 , B01J2219/0277 , B01J2219/0886 , Y02P20/149
Abstract: A reaction system and method for preparing compounds or intermediates from solid reactant materials is provided. In a specific aspect, a reaction system and methods are provided for preparation of boron-containing precursor compounds useful as precursors for ion implantation of boron in substrates. In another specific aspect, a reactor system and methods are provided for manufacture of boron precursors such as B2F4.
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