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    Laser cutting of thermally tempered substrates
    41.
    发明授权
    Laser cutting of thermally tempered substrates 有权

    公开(公告)号：US10252931B2

    公开(公告)日：2019-04-09

    申请号：US14993236

    申请日：2016-01-12

    Applicant: Corning Incorporated

    Inventor： Moussa N'Gom ,  Garrett Andrew Piech ,  James Joseph Watkins ,  Kristopher Allen Wieland ,  Chad Michael Wilcox

    IPC: B32B3/10 ,  C03B33/02 ,  B23K26/38 ,  B23K26/402 ,  B23K26/0622 ,  B23K26/359 ,  B23K26/53 ,  B23K103/00

    Abstract: Systems and methods for laser-cutting thermally tempered substrates are disclosed. In one embodiment, a method of separating a thermally tempered substrate includes directing a laser beam focal line such that at least a portion of the laser beam focal line is within a bulk of the thermally tempered substrate. The focused pulsed laser beam is pulsed to form a sequence of pulse bursts comprising one or more sub-pulses. The laser beam focal line produces a damage track within the bulk of the tempered substrate along the laser beam focal line. Relative motion is provided between the focused pulsed laser beam and the tempered substrate such that the pulsed laser beam forms a sequence of damage tracks within the tempered substrate. Individual damage tracks of the sequence of damage tracks are separated by a lateral spacing, and one or more microcracks connect adjacent damage tracks of the sequence of damage tracks.

    SILICA-CONTAINING SUBSTRATES WITH VIAS HAVING AN AXIALLY VARIABLE SIDEWALL TAPER AND METHODS FOR FORMING THE SAME
    43.
    发明申请
    SILICA-CONTAINING SUBSTRATES WITH VIAS HAVING AN AXIALLY VARIABLE SIDEWALL TAPER AND METHODS FOR FORMING THE SAME 审中-公开

    公开(公告)号：US20180342451A1

    公开(公告)日：2018-11-29

    申请号：US15978430

    申请日：2018-05-14

    Applicant: CORNING INCORPORATED

    Inventor： Rachel Eileen Dahlberg ,  Tian Huang ,  Yuhui Jin ,  Garrett Andrew Piech ,  Daniel Ohen Ricketts

    IPC: H01L23/498 ,  C03C23/00 ,  C03C15/00 ,  H01L23/15 ,  H01L21/48

    Abstract: Silica-containing substrates including vias with a narrow waist, electronic devices incorporating a silica-containing substrate, and methods of forming vias with narrow waist in silica-containing substrates are disclosed. In one embodiment, an article includes a silica-containing substrate including greater than or equal to 85 mol % silica, a first surface, a second surface opposite the first surface, and a via extending through the silica-containing substrate from the first surface toward the second surface. The via includes a first diameter at the first surface wherein the first diameter is less than or equal to 100 μm, a second diameter at the second surface wherein the first diameter is less than or equal to 100 μm, and a via waist between the first surface and the second surface. The via waist has a waist diameter that is less than the first diameter and the second diameter such that a ratio between the waist diameter and each of the first diameter and the second diameter is less than or equal to 75%.

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