ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND DISPLAY APPARATUS
    43.
    发明申请
    ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND DISPLAY APPARATUS 审中-公开
    阵列基板及其制造方法及显示装置

    公开(公告)号:US20160358991A1

    公开(公告)日:2016-12-08

    申请号:US14785830

    申请日:2015-02-27

    Abstract: The present invention provides an array substrate and a manufacturing method thereof, and a display apparatus; and it relates to the field of display. The array substrate includes a first thin film transistor and a first electrode which are formed on a substrate. The first thin film transistor includes a gate, a gate insulating layer, an active layer, and an etch stop layer. The etch stop layer is formed with first via holes, and the etch stop layer and the gate insulating layer are formed with a second via hole at a position corresponding to the first electrode. A maximal diameter of the first via holes is not greater than a minimal diameter of the second via hole.

    Abstract translation: 本发明提供阵列基板及其制造方法以及显示装置; 它涉及显示领域。 阵列基板包括形成在基板上的第一薄膜晶体管和第一电极。 第一薄膜晶体管包括栅极,栅极绝缘层,有源层和蚀刻停止层。 蚀刻停止层由第一通孔形成,并且蚀刻停止层和栅极绝缘层在对应于第一电极的位置处形成有第二通孔。 第一通孔的最大直径不大于第二通孔的最小直径。

    Manufacturing method for an array substrate that can avoid electrical leakage of thin film transistors
    45.
    发明授权
    Manufacturing method for an array substrate that can avoid electrical leakage of thin film transistors 有权
    能够避免薄膜晶体管漏电的阵列基板的制造方法

    公开(公告)号:US09443875B2

    公开(公告)日:2016-09-13

    申请号:US14422818

    申请日:2014-04-30

    Abstract: The present invention provides array substrate and manufacturing method thereof and display device. The manufacturing method comprises: forming patterns including active regions of first and second TFTs by patterning process on substrate; forming gate insulation layer on the substrate; forming patterns including gates of the TFTs by patterning process on the substrate; forming isolation layer on the substrate; forming, on the substrate, second contacting vias for connecting sources and drains of the TFTs to respective active regions and first contacting via for connecting gate of the second TFT to source of the first TFT; and on the substrate, forming patterns of corresponding sources and drains on the second contacting vias above active regions of the TFTs, and meanwhile forming connection line for connecting gate of the second TFT to source of the first TFT above the first contacting via above gate of the second TFT.

    Abstract translation: 本发明提供阵列基板及其制造方法和显示装置。 制造方法包括:通过在基板上的图案化工艺来形成包括第一和第二TFT的有源区域的图案; 在基板上形成栅极绝缘层; 通过在基板上的图案化工艺形成包括TFT的栅极的图案; 在基板上形成隔离层; 在所述衬底上形成用于将所述TFT的源极和漏极连接到相应有源区的第二接触通孔,以及用于将所述第二TFT的栅极连接到所述第一TFT的源的第一接触通孔; 并且在衬底上,在TFT的有源区上方的第二接触通孔上形成相应源极和漏极的图案,同时形成用于将第一TFT的栅极连接到第一TFT的栅极的连接线, 第二TFT。

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