公开(公告)号：US09722005B2

公开(公告)日：2017-08-01

申请号：US14420736

申请日：2014-06-30

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Huifeng Wang ,  Ze Liu ,  Gang Wang

IPC: H01L29/08 ,  H01L27/32 ,  H01L51/56

CPC classification number: H01L27/3246 ,  H01L51/56

Abstract: The present invention discloses a light-emitting device, array substrate, display device and manufacturing method of light-emitting device. The light-emitting device comprises a substrate and a pixel define layer provided on the substrate, the pixel define layer defines at least one pixel unit, each of which comprises a plurality of first electrodes, an organic layer provided on the plurality of first electrodes, and a second electrode provided on the organic layer. The light-emitting device, array substrate, display device and manufacturing method provided by the present invention can allow the formed film of the organic layer on the first electrodes to have good flatness and allow portions of the organic layer on different first electrodes to have substantially the same thickness, thus flatness and uniformity of the formed film of the organic layer in the light-emitting device is improved and further display quality of the light-emitting device is improved.

公开(公告)号：US20170033131A1

公开(公告)日：2017-02-02

申请号：US14908652

申请日：2015-09-18

Applicant: BOE Technology Group Co., Ltd.

Inventor： Xiaodi Liu ,  Gang Wang

IPC: H01L27/12

CPC classification number: H01L27/1255 ,  H01L27/1288

Abstract: An array substrate, a manufacturing method thereof and a display device are disclosed. The array substrate comprises a gate electrode layer, an active layer and a source-drain electrode layer that are disposed on a substrate. The substrate comprises a storage capacitance region thereon II. In the storage capacitance region II, projections of the gate electrode layer and the active layer on the substrate are at least partially overlapped, and projections of the active layer and the source-drain electrode layer on the substrate are at least partially overlapped. The array substrate can effectively increase the storage capacitance without increasing an area occupied by the storage capacitance region, which is advantageously to reduce a pixel area and increase PPI.

Abstract translation: 公开了阵列基板，其制造方法和显示装置。 阵列基板包括设置在基板上的栅极电极层，有源层和源极 - 漏极电极层。 衬底包括其上的存储电容区域。 在存储电容区域II中，基板上的栅电极层和有源层的突起至少部分重叠，并且基板上的有源层和源极 - 漏极电极层的突起至少部分重叠。 阵列基板可以有效地增加存储电容，而不增加存储电容区域占用的面积，这有利于减少像素面积并增加PPI。

公开(公告)号：US20160254296A1

公开(公告)日：2016-09-01

申请号：US14241345

申请日：2013-11-08

Applicant: BOE Technology Group Co., Ltd.

Inventor： Xiang Liu ,  Gang Wang ,  Jianshe Xue

IPC: H01L27/12 ,  H01L29/49 ,  H01L29/45 ,  G02F1/1362 ,  H01L29/423 ,  H01L29/786 ,  G02F1/1343 ,  H01L21/027 ,  H01L21/4763

CPC classification number: H01L27/1288 ,  G02F1/13439 ,  G02F1/136286 ,  G02F2001/136295 ,  H01L21/0274 ,  H01L21/47635 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/42356 ,  H01L29/42384 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/495 ,  H01L29/66765 ,  H01L29/7869

Abstract: The present invention provides a method for manufacturing an array substrate comprising: sequentially forming an adhesion enhancement layer, a copper-bearing metal layer and a photoresist layer on a substrate, and respectively forming a reserved region and a removal region by performing exposure and development on the photoresist layer using a mask plate, simultaneously processing the adhesion enhancement layer, the copper-bearing metal layer and the photoresist layer in the removal region by a single wet etching process, to form an adhesion enhancement intermediate layer corresponding to the adhesion enhancement layer, a copper-bearing metal intermediate layer corresponding to the copper-bearing metal layer and the photoresist layer thereon in the reserved region; simultaneously processing the adhesion enhancement intermediate layer, the copper-bearing metal intermediate layer and the photoresist layer by a dry etching process, then stripping off the photoresist layer, to form a patterned adhesion enhancement layer and a patterned copper-bearing metal layer respectively.

Abstract translation: 本发明提供一种阵列基板的制造方法，包括：在基板上依次形成粘合增强层，含铜金属层和光致抗蚀剂层，分别通过曝光和显影来形成保留区域和去除区域 使用掩模板的光致抗蚀剂层，通过单次湿法蚀刻工艺同时处理去除区域中的粘附增强层，含铜金属层和光致抗蚀剂层，以形成对应于粘合增强层的粘附增强中间层， 对应于所述保留区域中的含铜金属层和其上的光致抗蚀剂层的含铜金属中间层; 通过干法蚀刻工艺同时处理粘合增强中间层，含铜金属中间层和光致抗蚀剂层，然后剥离光致抗蚀剂层，分别形成图案化的附着增强层和图案化的含铜金属层。

公开(公告)号：US20160011158A1

公开(公告)日：2016-01-14

申请号：US14574841

申请日：2014-12-18

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaodi Liu ,  Cuili Gai ,  Fengjuan Liu ,  Gang Wang

IPC: G01N33/00 ,  H05B3/03 ,  H01L29/26 ,  H01L29/22 ,  H01L29/786

CPC classification number: G01N33/0027 ,  G01N33/0062 ,  H01L29/22 ,  H01L29/26 ,  H01L29/786

Abstract: Embodiments of the present invention provide a gas detection sensor, a display panel, and a display device. The gas detection sensor comprises: a gas sensitive part; two detection electrodes electrically connected with each other through the gas sensitive part; and a protective layer enclosing the gas sensitive part and the detection electrodes. When one of the detection electrodes is applied with a detecting signal, the detecting signal is output from the other detection electrode after being modulated by the gas sensitive part, and a voltage signal output by the other detection electrode is related to a nature of the outside air to which the gas sensitive part is exposed, thereby a detection on air quality may be achieved through detecting the voltage signal output from the other detection electrode, such that a simply structured and portable gas detection sensor can be realized.

Abstract translation: 本发明的实施例提供一种气体检测传感器，显示面板和显示装置。 气体检测传感器包括：气体敏感部件; 两个检测电极通过气体敏感部分彼此电连接; 以及包围气体敏感部分和检测电极的保护层。 当检测电极中的一个被施加检测信号时，在被气体敏感部分调制之后，从另一检测电极输出检测信号，并且由另一个检测电极输出的电压信号与外部的性质有关 可以通过检测从其他检测电极输出的电压信号来实现空气质量的检测，从而可以实现简单结构化的便携式气体检测传感器。

公开(公告)号：US09196864B2

公开(公告)日：2015-11-24

申请号：US14039513

申请日：2013-09-27

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Na Li ,  Hyoung Joon Park ,  Gang Wang

IPC: H01L51/52 ,  H01L51/56

CPC classification number: H01L51/5253 ,  H01L51/524 ,  H01L51/56 ,  H01L2251/5315

Abstract: An encapsulated structure of a light-emitting device, an encapsulating process thereof, and a display device comprising said encapsulated structure. The encapsulated structure of the light-emitting device comprises: a light-emitting device; and a protective layer of a sulfonate salt formed on a top electrode of the light-emitting device, the sulfonate salt having the following structure: wherein the cation X+ is Li+, Na+ or K+; and R is a substituent selected from the group consisting of unsubstituted alkyl groups having more than 5 carbon atoms, substituted alkyl groups having more than 5 carbon atoms, and alkoxyl groups having more than 5 carbon atoms.

Abstract translation: 发光器件的封装结构，其封装工艺和包括所述封装结构的显示器件。 发光装置的封装结构包括：发光装置; 以及形成在发光元件的顶部电极上的磺酸盐的保护层，所述磺酸盐具有以下结构：其中阳离子X +为Li +，Na +或K +; 并且R是选自具有多于5个碳原子的未取代的烷基，具有多于5个碳原子的取代烷基和具有多于5个碳原子的烷氧基的取代基。

公开(公告)号：US20150179809A1

公开(公告)日：2015-06-25

申请号：US14352182

申请日：2013-07-02

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiang Liu ,  Gang Wang ,  Jianshe Xue

IPC: H01L29/786 ,  H01L21/441 ,  H01L29/45 ,  H01L27/12 ,  H01L29/66 ,  H01L29/49

CPC classification number: H01L29/78606 ,  H01L21/441 ,  H01L27/1225 ,  H01L27/1259 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78693

Abstract: A thin film transistor and method for manufacturing the same, an array substrate and a display device are disclosed. The thin film transistor comprises a substrate; a gate electrode, a source electrode, a drain electrode and a semiconductor layer formed on the substrate; a gate insulating layer between the gate electrode and the semiconductor layer or between the gate electrode and the source and drain electrodes; an etching stop layer between the semiconductor layer and the source and drain electrodes having a source contact hole and a drain contact hole therein; and a source buffer layer between the source electrode and the semiconductor layer and a drain buffer layer between the drain electrode and the semiconductor layer. The source and drain electrodes are metal Cu electrodes, and the source and drain buffer layers are Cu alloy layer. The formation of the source and drain buffer layer improves the adhesion of the source and drain electrodes thereon to the semiconductor layer therebeneath, and thus improves the performance of the TFT and image quality.

Abstract translation: 公开了一种薄膜晶体管及其制造方法，阵列基板和显示装置。 薄膜晶体管包括基板; 栅电极，源电极，漏电极和形成在基板上的半导体层; 栅电极和半导体层之间或栅电极与源电极和漏电极之间的栅极绝缘层; 半导体层与源漏漏电极之间的蚀刻停止层，其中具有源极接触孔和漏极接触孔; 以及源极和半导体层之间的源极缓冲层以及漏极和半导体层之间的漏极缓冲层。 源极和漏极是金属Cu电极，源极和漏极缓冲层是Cu合金层。 源极和漏极缓冲层的形成提高了源极和漏极电极到其上的半导体层的粘附性，从而提高了TFT的性能和图像质量。