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41.发明申请公开(公告)号：US20180108842A1
公开(公告)日：2018-04-19
申请号：US15540711
申请日：2016-10-21
Applicant: BOE Technology Group Co., Ltd.
Inventor： Yanzhao Li , Zhuo Chen , Yuedi He , Jie Sun
CPC classification number: H01L51/0018 , G03F7/0007 , G03F7/0047 , G03F7/094 , G03F7/105 , G03F7/162 , G03F7/2002 , G03F7/2022 , G03F7/26 , H01L21/77 , H01L27/12 , H01L27/32 , H01L27/3211 , H01L51/0032 , H01L51/0035 , H01L51/0037 , H01L51/0039 , H01L51/0077 , H01L51/0079 , H01L51/0092 , H01L51/50 , H01L51/502 , H01L51/52 , H01L51/56
Abstract: A crosslinkable quantum dot (QD) and a preparing method thereof, an array substrate made by using the crosslinkable quantum dot (QD) and a preparing method thereof are provided. The surface of the crosslinkable quantum dot has a pair of groups R1 and R2 capable of reacting to form a cross-linked network, or a group R3 capable of being cross-linked by a crosslinking agent to form a cross-linked network.
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公开(公告)号：US09881985B2
公开(公告)日：2018-01-30
申请号：US13878905
申请日：2012-10-10
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Yanzhao Li , Gang Wang , Woobong Lee , Li Zhang
CPC classification number: H01L27/3276 , H01L27/1225 , H01L27/3248 , H01L51/5206 , H01L51/5221 , H01L51/5234 , H01L51/5271 , H01L51/56 , H01L2227/323 , H01L2251/305 , H01L2251/5323 , H01L2251/5353
Abstract: Embodiments of the invention disclose an OLED device, an AMOLED display device and a method for manufacturing the AMOLED display device. the AMOLED display device comprises a TFT active layer, a pixel electrode layer and an OLED device; the OLED device comprises a cathode layer and a functional layer, and the pixel electrode layer serves as the anode layer of the OLED device; alternatively, the OLED device comprises an anode layer and a functional layer, and the pixel electrode layer serves as the cathode layer of the OLED device. Moreover, the TFT active layer and the pixel electrode layer are formed from a same IGZO film by a patterning process.
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公开(公告)号：US20170236881A1
公开(公告)日：2017-08-17
申请号：US15503230
申请日：2015-01-27
Applicant: BOE Technology Group Co., Ltd.
Inventor： Wulin Shen , Yanzhao Li , Jian Cui
CPC classification number: H01L27/3206 , H01L27/3218 , H01L27/322 , H01L27/3258 , H01L51/5221 , H01L51/5256 , H01L51/5265 , H01L51/5271 , H01L51/56 , H01L2227/323
Abstract: A display substrate, an Organic Light Emitting Diode (OLED) display device and a manufacturing method for the display substrate. The display substrate includes a plurality of pixel units located on a substrate and filter functional units corresponding to the pixel units. Each filter functional unit includes at least three micro-cavity structures, wherein the cavity lengths of the three micro-cavity structures in the direction of a vertical substrate are different, only light with a specific wavelength can penetrate through the micro-cavity structures with different cavity lengths, and the cavity lengths of micro-cavity structures corresponding to similar sub-pixel units of the pixel units are the same.
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公开(公告)号：US20160260788A1
公开(公告)日：2016-09-08
申请号：US14435895
申请日：2014-08-13
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Jingfei Fang , Chunsheng Jiang , Yanzhao Li
CPC classification number: H01L27/3248 , H01L27/1288 , H01L27/322 , H01L27/3258 , H01L51/5206 , H01L51/56 , H01L2227/323
Abstract: The present invention discloses a WOLED back panel and a method of manufacturing the same. The method comprises: forming a pattern of a color filter layer on a substrate; exposing the pattern of the color filter layer by halftone exposure so as to form a groove structure in the pattern of the color filter layer; forming a pattern of a resin material layer on a surface of the substrate formed with the groove structure, and heavily doping a partial region of the resin material layer so as to form a heavily doped part having a conductivity; the heavily doped partial region of the resin material layer corresponding to a pixel electrode region, a via region, and a connection region between the pixel electrode region and the via region; and forming an organic light-emitting layer and a cathode in order on a surface of the substrate after heavily doping the partial region of the resin material layer. The production cost is reduced in the present invention by forming a groove structure in the color filter layer instead of manufacturing a conventional pixel defining layer.
Abstract translation: 本发明公开了一种WOLED背面板及其制造方法。 该方法包括：在衬底上形成滤色器层的图案; 通过半色调曝光曝光滤色器层的图案，以便在滤色器层的图案中形成凹槽结构; 在形成有槽结构的基板的表面上形成树脂材料层的图案，并且重掺杂树脂材料层的部分区域，以形成具有导电性的重掺杂部分; 对应于像素电极区域，通孔区域和像素电极区域和通孔区域之间的连接区域的树脂材料层的重掺杂部分区域; 以及在重掺杂树脂材料层的部分区域之后，在衬底的表面上依次形成有机发光层和阴极。 通过在滤色器层中形成凹槽结构而不是制造常规的像素限定层，在本发明中降低了生产成本。
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公开(公告)号：US20160202795A1
公开(公告)日：2016-07-14
申请号：US14892409
申请日：2015-06-05
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Long Wang , Yanzhao Li , Yong Qiao , Yongchun Lu
IPC: G06F3/044
CPC classification number: G06F3/044 , G06F2203/04103 , G06F2203/04111 , H01L29/78684
Abstract: A touch panel, a manufacturing method thereof and a display device are disclosed. The method for manufacturing the touch panel includes: forming touch electrodes (4) with topological semiconductor characteristics on a substrate (1), in which the touch electrodes (4) with topological semiconductor characteristics are obtained by a topological treatment on a Ge film with functionalized elements. The touch panel manufactured by the method and the display device including the touch panel have high touch sensitivity.
Abstract translation: 公开了触摸面板及其制造方法和显示装置。 制造触摸面板的方法包括：在基板（1）上形成具有拓扑半导体特性的触摸电极（4），其中具有拓扑半导体特性的触摸电极（4）通过对具有功能化的 元素。 通过该方法制造的触摸面板和包括触摸面板的显示装置具有高的触摸灵敏度。
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Patent Agency Ranking
46.发明申请THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE, DISPLAY DEVICE 有权薄膜晶体管及其制造方法，阵列基板，显示器件公开(公告)号：US20160197274A1
公开(公告)日：2016-07-07
申请号：US14891091
申请日：2015-05-14
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Yanzhao Li , Long Wang , Yong Qiao , Yongchun Lu
IPC: H01L49/00 , H01L29/786 , H01L27/12 , H01L29/66
CPC classification number: H01L27/124 , H01L27/12 , H01L27/1222 , H01L27/1285 , H01L29/66742 , H01L29/78684 , H01L29/78696
Abstract: A thin film transistor and manufacturing method thereof, an array substrate and a display device are provided. In the manufacturing method of the thin film transistor, manufacturing an active layer includes: forming a germanium thin film, and forming pattern of the active layer through a patterning process; conducting a topological treatment on the germanium thin film with a functionalized element, so as to obtain the active layer (4) with topological semiconductor characteristics. The resultant thin film transistor has a higher carrier mobility and a better performance.
Abstract translation: 提供薄膜晶体管及其制造方法，阵列基板和显示装置。 在薄膜晶体管的制造方法中，制造有源层包括：形成锗薄膜，通过图案化工艺形成有源层的图案; 用功能化元素对锗薄膜进行拓扑处理，以获得具有拓扑半导体特性的有源层（4）。 所得的薄膜晶体管具有更高的载流子迁移率和更好的性能。
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47.发明授权公开(公告)号：US09218957B2
公开(公告)日：2015-12-22
申请号：US13703537
申请日：2012-09-19
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Yanzhao Li , Gang Wang , Li Sun , Shuang Guan
IPC: H01L21/265 , H01L27/12 , H01L21/02 , H01L29/49 , H01L29/66 , H01L29/786 , H01L21/28
CPC classification number: H01L21/02238 , H01L21/28158 , H01L27/1222 , H01L29/4908 , H01L29/66757 , H01L29/78675
Abstract: Embodiments of the present invention provide a thin film transistor, a manufacturing method thereof and a display device. The method for manufacturing the thin film transistor, comprising the following steps: providing a substrate; forming a semiconductor layer on the substrate; forming a gate insulating layer; and forming a gate electrode, wherein the gate insulating layer comprises a first gate insulating layer, the first gate insulating layer being formed by oxidizing a portion of the semiconductor layer, and the unoxidized portion of the semiconductor layer forming an active layer, and wherein the gate electrode is formed in such a way that the gate insulating layer is sandwiched between the gate electrode and the active layer.
Abstract translation: 本发明的实施例提供一种薄膜晶体管，其制造方法和显示装置。 制造薄膜晶体管的方法包括以下步骤：提供衬底; 在所述基板上形成半导体层; 形成栅极绝缘层; 以及形成栅电极，其中所述栅极绝缘层包括第一栅极绝缘层，所述第一栅极绝缘层通过氧化所述半导体层的一部分和形成有源层的所述半导体层的未氧化部分形成，并且其中 栅电极形成为使得栅极绝缘层夹在栅电极和有源层之间。
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48.发明申请公开(公告)号：US20140124787A1
公开(公告)日：2014-05-08
申请号：US13703537
申请日：2012-09-09
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Yanzhao Li , Gang Wang , Li Sun , Shuang Guan
IPC: H01L21/02 , H01L29/786 , H01L27/12 , H01L29/66
CPC classification number: H01L21/02238 , H01L21/28158 , H01L27/1222 , H01L29/4908 , H01L29/66757 , H01L29/78675
Abstract: Embodiments of the present invention provide a thin film transistor, a manufacturing method thereof and a display device. The method for manufacturing the thin film transistor, comprising the following steps: providing a substrate; forming a semiconductor layer on the substrate; forming a gate insulating layer; and forming a gate electrode, wherein the gate insulating layer comprises a first gate insulating layer, the first gate insulating layer being formed by oxidizing a portion of the semiconductor layer, and the unoxidized portion of the semiconductor layer forming an active layer, and wherein the gate electrode is formed in such a way that the gate insulating layer is sandwiched between the gate electrode and the active layer.
Abstract translation: 本发明的实施例提供一种薄膜晶体管，其制造方法和显示装置。 制造薄膜晶体管的方法包括以下步骤：提供衬底; 在所述基板上形成半导体层; 形成栅极绝缘层; 以及形成栅电极，其中所述栅极绝缘层包括第一栅极绝缘层，所述第一栅极绝缘层通过氧化所述半导体层的一部分和形成有源层的所述半导体层的未氧化部分形成，并且其中 栅电极形成为使得栅极绝缘层夹在栅电极和有源层之间。
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公开(公告)号：US12255395B2
公开(公告)日：2025-03-18
申请号：US18018853
申请日：2022-01-29
Inventor： Feng Wang , Tuo Sun , Yanzhao Li , Feng Qu
Abstract: An antenna, a display substrate and a display device are provided in the present disclosure, wherein the antenna includes a first conductive layer (11), a dielectric layer (12) and a second conductive layer (13) which are stacked; the first conductive layer (11) is provided with at least one slot (111); the second conductive layer (13) includes at least one conductive structure (130), the conductive structure (130) is a comb structure, the conductive structure (130) includes a first conductive element (131) and a plurality of second conductive elements (132), the first conductive element (131) constitutes a comb back of the comb structure, and the plurality of second conductive elements (132) constitute comb teeth of the comb structure; at least one conductive structure (130) is disposed corresponding to at least one slot (111).
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公开(公告)号：US12222381B2
公开(公告)日：2025-02-11
申请号：US17637908
申请日：2021-03-23
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Feng Wang , Jian Zhou , Yanzhao Li , Feng Qu
IPC: G01R29/08
Abstract: The present disclosure provides a thin film sensor and a manufacturing method thereof, and belongs to the technical field of sensors. The thin film sensor of the present disclosure has a plurality of conductive-wire regions intersecting each other, and a plurality of hollow-out parts defined by the plurality of conductive-wire regions; the thin film sensor includes: a base substrate; a plurality of conductive wires on the base substrate, with the conductive wires being in the conductive-wire regions one to one; and a functional structure on the base substrate, where the functional structure is configured to allow at least part of light, which is transmitted along a preset direction and enters the functional structure from the conductive wire-regions, to exit from the hollow-out parts, and the preset direction is a direction from the base substrate towards the conductive wires.
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