公开(公告)号：US20080316203A1

公开(公告)日：2008-12-25

申请号：US12125773

申请日：2008-05-22

Applicant: Christian Sandor ,  Naoki Nishimura

Inventor： Christian Sandor ,  Naoki Nishimura

IPC: G06T17/00

CPC classification number: G06F3/012

Abstract: An information processing method includes measuring a line-of-sight direction of a user as a first direction, specifying a first point based on the first direction, calculating a three-dimensional position of the first point, setting a first plane based on the three-dimensional position of the first position, measuring a line-of-sight direction of the user after the setting of the first plane as a second direction, specifying a second point included in the first plane based on the second direction, and calculating a three-dimensional position of the second point.

Abstract translation: 一种信息处理方法，包括：测量用户的视线方向作为第一方向，基于第一方向指定第一点，计算第一点的三维位置，基于三者设置第一平面 第一位置的维度位置，在将第一平面设置为第二方向之后测量用户的视线方向，基于第二方向指定包括在第一平面中的第二点，并且计算三维 第二点的维度位置。

公开(公告)号：US07420839B2

公开(公告)日：2008-09-02

申请号：US11410705

申请日：2006-04-24

Applicant: Takashi Ikeda ,  Yoshinobu Sekiguchi ,  Naoki Nishimura

Inventor： Takashi Ikeda ,  Yoshinobu Sekiguchi ,  Naoki Nishimura

IPC: G11C11/15

CPC classification number: H01L27/228 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/15 ,  G11C11/16 ,  H01F10/3254 ,  H01F10/3281 ,  H01F10/3286

Abstract: A magnetization reversal method is disclosed in which an external magnetic field is applied to a magnetoresistive film requiring a strong magnetic film for reversal. A weak magnetic field is applied when magnetically coupled perpendicular magnetic films are used in which the magnetoresistive film has a structure wherein a nonmagnetic film is placed between magnetic films with an easy axis of magnetization along a perpendicular direction to a film plane, and in which said external magnetic field is comprised of magnetic fields from a plurality of directions including a direction of easy magnetization of the magnetic films.

Abstract translation: 公开了一种磁化反转方法，其中外部磁场被施加到需要强磁性膜反转的磁阻膜上。 当使用磁耦合垂直磁性膜时，施加弱磁场，其中磁阻膜具有这样一种结构，其中非磁性膜沿着与薄膜平面垂直的方向具有容易的磁化轴的磁性膜之间，其中所述 外部磁场由包括磁性膜容易磁化的方向的多个方向的磁场构成。

公开(公告)号：US07277125B2

公开(公告)日：2007-10-02

申请号：US10744753

申请日：2003-12-23

Applicant: Naoki Nishimura ,  Kenji Saitoh

Inventor： Naoki Nishimura ,  Kenji Saitoh

IPC: H04N5/225 ,  H04N13/02 ,  H04N15/00 ,  G09G5/00

CPC classification number: G06T1/0007 ,  H04N1/00281

Abstract: An image processing system or image processing method for performing image sensing by an image sensing unit having plural image sensing devices then outputting plural image data, wireless-transmitting the plural image data, and generating a combined image based on the wireless-transmitted plural image data.

Abstract translation: 一种用于通过具有多个图像感测装置的图像感测单元执行图像感测的图像处理系统或图像处理方法，然后输出多个图像数据，无线发送多个图像数据，并且基于无线发送的多个图像数据生成组合图像 。

公开(公告)号：US20050042366A1

公开(公告)日：2005-02-24

申请号：US10959073

申请日：2004-10-07

Applicant: Takeyuki Itabashi ,  Haruo Akahoshi ,  Eiji Takai ,  Naoki Nishimura ,  Tadashi Iida ,  Yoshinori Ueda

Inventor： Takeyuki Itabashi ,  Haruo Akahoshi ,  Eiji Takai ,  Naoki Nishimura ,  Tadashi Iida ,  Yoshinori Ueda

IPC: H05K1/02 ,  C23C18/38 ,  C23C18/40 ,  H05K3/18 ,  H05K3/42 ,  H05K3/46 ,  B05D1/18

CPC classification number: C23C18/40 ,  H05K3/421 ,  H05K3/422 ,  H05K3/426 ,  H05K3/429 ,  H05K2201/09518

Abstract: A multilayer wiring substrate which is high in connection reliability is provided through process steps of forming more than one opening, such as a via-hole in a dielectric layer laminated on a substrate, and then applying uniform copper plating to a surface portion of the dielectric layer including the opening to thereby form a wiring layer. An electroless copper plating solution with at least one of mandelonitrile and triethyltetramine mixed therein is used to perform the intended electroless copper plating. An alternative process makes use of an electroless copper plating solution with chosen additives or “admixtures” containing at least on of mandelonitrile and triethyltetramine plus eriochrome block T along with at least one of 2,2′-bipyridyl, 1,10-phenanthroline, and 2,9-dimethyl-1,10-phenanthroline

Abstract translation: 通过在层叠在基板上的电介质层中形成多个开口（例如通孔），然后对电介质的表面部分施加均匀的镀铜，通过工艺步骤提供连接可靠性高的多层布线基板 层，从而形成布线层。 使用其中混合有扁桃腈和三乙基四胺中的至少一种的无电镀铜溶液进行预期的无电镀铜。 一种替代方法利用含有至少含有扁桃腈和三乙基四胺加色团块T的选择的添加剂或“混合物”的化学镀铜溶液以及至少一种2,2'-联吡啶，1,10-菲咯啉和 2,9-二甲基-1,10-菲咯啉

公开(公告)号：US06853580B2

公开(公告)日：2005-02-08

申请号：US10098117

申请日：2002-03-15

Applicant: Naoki Nishimura

Inventor： Naoki Nishimura

IPC: G11C11/14 ,  G01R33/09 ,  G11B5/39 ,  G11C11/15 ,  G11C11/16 ,  H01F10/08 ,  H01F10/32 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  H01L43/08

CPC classification number: H01L27/228 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/16 ,  H01F10/3281 ,  H01F10/3286 ,  H01L43/08

Abstract: An offset of the switching magnetic field of a memory layer caused by a static magnetic field from a pinned layer in a magnetoresistive element used as a memory element is suppressed. A first magnetic layer magnetized perpendicularly to the film surface, an insulating layer, and a second magnetic layer magnetized perpendicularly to the film surface form the magnetoresistive element. The coercive force of the second magnetic layer is higher than that of the first magnetic layer. Upon the flow of current between the first magnetic layer and the second magnetic layer via the insulating layer N2, the resistance changes depending on the relative angle in magnetization between the two magnetic layers. A magnetic field applied from the second magnetic layer 2 to the first magnetic layer 1 is set smaller than the coercive force of the first magnetic layer 1.

Abstract translation: 由用作存储元件的磁阻元件中的被钉扎层的静磁场引起的存储层的开关磁场的偏移被抑制。 垂直于膜表面磁化的第一磁性层，垂直于膜表面磁化的绝缘层和第二磁性层形成磁阻元件。 第二磁性层的矫顽力高于第一磁性层的矫顽力。 当经由绝缘层N2在第一磁性层和第二磁性层之间流过电流时，电阻根据两个磁性层之间的磁化相对角度而改变。 从第二磁性层2施加到第一磁性层1的磁场被设定为小于第一磁性层1的矫顽力。

公开(公告)号：USRE38501E1

公开(公告)日：2004-04-20

申请号：US09820734

申请日：2001-03-30

Applicant: Naoki Nishimura ,  Hiroshi Omata

Inventor： Naoki Nishimura ,  Hiroshi Omata

IPC: G11B566

CPC classification number: G11B11/10515 ,  G11B11/10508 ,  G11B11/10584 ,  G11B11/10586

Abstract: A method of recording information on and reproducing information from a magnetooptical recording medium which includes first and second magnetic layers. The method includes the step of projecting a light spot onto the medium. When reproducing information, the light spot is projected onto the medium from the side of the magnetic layer. In this method only a high temperature region of the second magnetic layer within a light spot projection portion is changed to a perpendicular magnetization film so that information recorded in the first magnetic layer is transferred to the perpendicular magnetization film of the second magnetic layer. In addition, information which is transferred to the second magnetic layer is detected by using reflected light from the medium which is subjected to the magneto-optic effect from the perpendicular magnetization film of the second magnetic layer. When recording information, a magnetic field is applied, whose magnetization direction is modulated according to information, to a light spot projection portion of the medium so the magnetization of the second magnetic layer is oriented to the direction of the applied magnetic field, and the magnetization of the second magnetic layer is transferred to the first magnetic layer to form a record bit.

公开(公告)号：USD484515S1

公开(公告)日：2003-12-30

申请号：US29170127

申请日：2002-11-01

Applicant: Naoki Nishimura

Designer： Naoki Nishimura

公开(公告)号：US06487110B2

公开(公告)日：2002-11-26

申请号：US09963519

申请日：2001-09-27

Applicant: Naoki Nishimura ,  Yoshinobu Sekiguchi ,  Tadahiko Hirai

Inventor： Naoki Nishimura ,  Yoshinobu Sekiguchi ,  Tadahiko Hirai

IPC: G11C1115

CPC classification number: G11C11/15

Abstract: The fabrication process of a conventional MRAM using a magnetoresistive effect element as a memory device is difficult, and the device structure makes it difficult to decrease the cell area and increase the degree of integration. It is an object of this invention to realize an MRAM which can achieve a high integration degree. A memory device is characterized by including a magnetoresistive element, a bit line formed above this magnetoresistive element, and a write line. The magnetoresistive element is formed immediately above the drain region of a field-effect transistor.

Abstract translation: 使用磁阻效应元件作为存储器件的常规MRAM的制造过程是困难的，并且器件结构使得难以减小单元面积并增加集成度。 本发明的目的是实现可以实现高集成度的MRAM。 存储器件的特征在于包括磁阻元件，形成在该磁阻元件上方的位线和写入线。 磁阻元件形成在场效应晶体管的漏区正上方。

公开(公告)号：US06307816B1

公开(公告)日：2001-10-23

申请号：US09045682

申请日：1998-03-23

Applicant: Naoki Nishimura

Inventor： Naoki Nishimura

IPC: G11B566

CPC classification number: G11B11/10586 ,  G11B11/10515 ,  G11B11/10584

Abstract: A magneto-optical recording medium includes a reproducing layer, a recording layer and an intermediate layer provided between the reproducing layer and the recording layer. The reproducing layer is an in-plane magnetization film at least at room temperature, and becomes a perpendicular magnetization film at a temperature between room temperature and the Curie temperature thereof. The recording layer is a perpendicular magnetization film in a temperature range from room temperature to the Curie temperature thereof. The intermediate layer has a larger in-plane magnetic anisotropy at room temperature than the in-plane magnetic anisotropy of the reproducing layer.

Abstract translation: 磁光记录介质包括再现层，记录层和设置在再现层和记录层之间的中间层。 再现层至少在室温下是面内磁化膜，并且在室温和居里温度之间的温度下成为垂直磁化膜。 记录层是在从室温到居里温度的温度范围内的垂直磁化膜。 中间层在室温下具有比再现层的面内磁各向异性更大的面内磁各向异性。

公开(公告)号：US06226197B1

公开(公告)日：2001-05-01

申请号：US09422793

申请日：1999-10-22

Applicant: Naoki Nishimura

Inventor： Naoki Nishimura

IPC: G11C1114

CPC classification number: H01L27/228 ,  B82Y10/00 ,  G11C11/15

Abstract: The present invention relates to a magnetic thin film memory having a hybrid element including a field effect transistor and a magnetoresistive thin film connected to the field effect transistor in parallel. In the magnetic thin film memory, the hybrid element is preferably arranged in plurality in a matrix state. The present invention also relates to a method of writing information in this magnetic thin film memory, and a method of reading the information written in this magnetic thin film memory.

Abstract translation: 本发明涉及具有混合元件的磁性薄膜存储器，该混合元件包括并联连接到场效应晶体管的场效应晶体管和磁阻薄膜。 在磁性薄膜存储器中，混合元件优选以矩阵状多个排列。 本发明还涉及在该磁性薄膜存储器中写入信息的方法以及读取写在该磁性薄膜存储器中的信息的方法。