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    METHOD OF MULTIPLE ZONE SYMMETRIC GAS INJECTION FOR INDUCTIVELY COUPLED PLASMA
    42.
    发明申请
    METHOD OF MULTIPLE ZONE SYMMETRIC GAS INJECTION FOR INDUCTIVELY COUPLED PLASMA 有权
    用于感应耦合等离子体的多区域对称气体注入方法

    公开(公告)号：US20150371824A1

    公开(公告)日：2015-12-24

    申请号：US14310969

    申请日：2014-06-20

    Applicant: Applied Materials, Inc.

    Inventor： Steven LANE ,  Yang YANG ,  Kartik RAMASWAMY ,  Lawrence WONG

    IPC: H01J37/32 ,  C23F4/00 ,  C23C16/513

    CPC classification number: H01J37/3211 ,  H01J37/32165 ,  H01J37/3244 ,  H01J2237/332 ,  H01J2237/334

    Abstract: Implementations described herein inject feedstock gases into multiple zones of an inductively coupled plasma processing reactor with minimal or no effect on process skew. In one embodiment, an integrated gas and coil assembly is provided that includes an upper surface and a lower surface, a first RF field applicator coil bounded at the upper surface and the lower surface, a second RF field applicator coil circumscribed by the first RF field applicator coil and bounded at the upper surface and the lower surface and an RF shield disposed between the first and second RF field generator wherein the RF shield extends from the lower surface and past the upper surface. The RF shield may have at least one gas channel disposed therethrough.

    Abstract translation: 本文所述的实施方案将原料气体注入到电感耦合等离子体处理反应器的多个区域中，对工艺偏差具有最小或没有影响。 在一个实施例中，提供集成的气体和线圈组件，其包括上表面和下表面，在上表面和下表面界定的第一RF场施加器线圈，由第一RF场限定的第二RF场施加器线圈 施加器线圈并且在上表面和下表面处限定，并且RF屏蔽设置在第一和第二RF场发生器之间，其中RF屏蔽件从下表面延伸并且经过上表面。 RF屏蔽件可以具有穿过其中布置的至少一个气体通道。

    THREE-DIMENSIONAL (3D) PROCESSING AND PRINTING WITH PLASMA SOURCES
    43.
    发明申请
    THREE-DIMENSIONAL (3D) PROCESSING AND PRINTING WITH PLASMA SOURCES 审中-公开
    三维（3D）处理和印刷等离子体源

    公开(公告)号：US20150042017A1

    公开(公告)日：2015-02-12

    申请号：US14063860

    申请日：2013-10-25

    Applicant: APPLIED MATERIALS, INC.

    Inventor： Kartik RAMASWAMY ,  Troy DETRICK ,  Srinivas NEMANI ,  Ajey JOSHI

    IPC: B28B1/00 ,  C23C26/02

    CPC classification number: B28B1/001 ,  B22F3/1055 ,  B22F2003/1056 ,  B22F2999/00 ,  C23C16/513 ,  C23C26/02 ,  Y02P10/295 ,  B22F2202/13

    Abstract: Embodiments include systems, apparatuses, and methods of three-dimensional plasma printing or processing. In one embodiment, a method includes introducing chemical precursors into one or more point plasma sources, generating plasma in the one or more point plasma sources from the chemical precursors with one or more power sources, and locally patterning a substrate disposed over a stage with the generated plasma by moving the stage with respect to the one or more point plasma sources.

    Abstract translation: 实施例包括三维等离子体印刷或处理的系统，装置和方法。 在一个实施例中，一种方法包括将化学前体引入一个或多个点等离子体源中，在具有一个或多个电源的化学前体的一个或多个点等离子体源中产生等离子体，以及将设置在舞台上的衬底 通过相对于一个或多个点等离子体源移动台来产生等离子体。

    PLASMA PROCESSING ASSEMBLY FOR RF AND PVT INTEGRATION
    45.
    发明申请
    PLASMA PROCESSING ASSEMBLY FOR RF AND PVT INTEGRATION 有权

    公开(公告)号：US20250046576A1

    公开(公告)日：2025-02-06

    申请号：US18365261

    申请日：2023-08-04

    Applicant: Applied Materials, Inc.

    Inventor： Yue GUO ,  Yang YANG ,  A N M Wasekul AZAD ,  Kartik RAMASWAMY ,  Nicolas J. BRIGHT

    IPC: H01J37/32

    Abstract: Embodiments of the present disclosure relate to a system and methods for processing a substrate in a plasma processing system. In an embodiment a plasma processing system is provided that includes a radio frequency (RF) generator coupled to a substrate support base disposed within the plasma processing system and configured to deliver an RF signal to the substrate support base, a pulsed voltage (PV) waveform generator coupled the substrate support base and configured to deliver a PV waveform to the substrate support base while the RF signal is delivered to the substrate support base, and a high voltage supply coupled to a biasing electrode of the plasma processing system and configured to deliver a chucking voltage to a biasing electrode disposed with the plasma processing system.

    PULSED VOLTAGE SOURCE FOR PLASMA PROCESSING APPLICATIONS
    47.
    发明公开
    PULSED VOLTAGE SOURCE FOR PLASMA PROCESSING APPLICATIONS 审中-公开

    公开(公告)号：US20230402254A1

    公开(公告)日：2023-12-14

    申请号：US17835864

    申请日：2022-06-08

    Applicant: Applied Materials, Inc.

    Inventor： A N M Wasekul AZAD ,  Kartik RAMASWAMY ,  Yang YANG ,  Yue GUO ,  Fernando SILVEIRA

    IPC: H01J37/32 ,  H03K17/687

    CPC classification number: H01J37/32091 ,  H03K17/687 ,  H01J2237/327

    Abstract: Embodiments provided herein generally include apparatus, e.g., plasma processing systems, and methods for the plasma processing of a substrate in a processing chamber. Some embodiments are directed to a waveform generator. The waveform generator generally includes a first voltage stage having: a first voltage source; a first switch; a ground reference; a transformer having a first transformer ratio, the first transformer comprising: a primary winding coupled to the first voltage source and the ground reference; and a secondary winding having a first end and a second end, wherein the first end is coupled to the ground reference, and the second end is configured to be coupled to a load through a common node; and a first diode coupled in parallel with the primary winding of the first transformer. The waveform generator generally also includes one or more additional voltage stages coupled to a load through the common node.

    METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE
    48.
    发明公开
    METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE 审中-公开

    公开(公告)号：US20230343555A1

    公开(公告)日：2023-10-26

    申请号：US17726930

    申请日：2022-04-22

    Applicant: Applied Materials, Inc.

    Inventor： Yue GUO ,  Katsumasa KAWASAKI ,  Kartik RAMASWAMY ,  Yang YANG ,  Nicolas John BRIGHT

    IPC: H01J37/32 ,  H03H7/38

    CPC classification number: H01J37/32146 ,  H01J37/32935 ,  H01J37/32183 ,  H03H7/38 ,  H01J2237/24564 ,  H01J2237/334

    Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a matching network configured for use with a plasma processing chamber comprises an input configured to receive one or more radio frequency (RF) signals, an output configured to deliver the one or more RF signals to a processing chamber, a first sensor operably connected to the input and a second sensor operably connected to the output and configured to measure impedance during operation, at least one variable capacitor connected to the first sensor and the second sensor and a controller, based on a measured impedance, configured to tune the at least one variable capacitor of the matching network to a first target position based on weighted output impedance values measured at pulse states of a voltage waveform and to tune the at least one variable capacitor to a second target position based on weighted input impedance values measured at the pulse states of the voltage waveform.

    ION ENERGY CONTROL ON ELECTRODES IN A PLASMA REACTOR
    49.
    发明公开
    ION ENERGY CONTROL ON ELECTRODES IN A PLASMA REACTOR 审中-公开

    公开(公告)号：US20230170194A1

    公开(公告)日：2023-06-01

    申请号：US17537107

    申请日：2021-11-29

    Applicant: Applied Materials, Inc.

    Inventor： Yue GUO ,  Yang YANG ,  Haitao WANG ,  Kartik RAMASWAMY

    IPC: H01J37/32

    CPC classification number: H01J37/3299 ,  H01J37/32174 ,  H01J2237/3341 ,  H01J37/32091

    Abstract: Embodiments provided herein generally include apparatus, plasma processing systems and methods for controlling ion energy distribution in a processing chamber. One embodiment of the present disclosure is directed to a method for plasma processing. The method generally includes: determining a voltage and/or power associated with a bias signal to be applied to a first electrode of a processing chamber, the voltage being determined based on a pressure inside a processing region of the processing chamber such that the voltage is insufficient to generate a plasma inside the chamber by application of the voltage and/or power to the first electrode; applying the first bias signal in accordance with the determined voltage and/or power to the first electrode; and applying a second bias signal to a second electrode of the processing chamber, wherein the second bias signal is configured to generate a plasma in the processing region and the first bias is applied while the second bias is applied.

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