公开(公告)号：US20130189840A1

公开(公告)日：2013-07-25

申请号：US13356002

申请日：2012-01-23

申请人： Xinyu Fu ,  Srinivas Gandikota ,  Sang Ho Yu ,  Kavita Shah ,  Yu Lei

发明人： Xinyu Fu ,  Srinivas Gandikota ,  Sang Ho Yu ,  Kavita Shah ,  Yu Lei

IPC分类号： H01L21/285

CPC分类号： H01L21/76843 ,  C23C16/0236 ,  C23C16/045 ,  C23C16/45523 ,  H01L21/02057 ,  H01L21/28518 ,  H01L21/28562 ,  H01L21/306 ,  H01L21/76814 ,  H01L21/76826

摘要： Methods for forming a contact metal layer in a contact structure in semiconductor devices are provided in the present invention. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device includes pulsing a deposition precursor gas mixture to a surface of a substrate disposed in a metal deposition processing chamber, pulsing a purge gas mixture to an edge of the substrate, wherein the purge gas mixture includes at least a hydrogen containing gas and an inert gas, and forming a contact metal layer on the substrate from the first deposition precursor gas mixture.

摘要翻译： 在本发明中提供了在半导体器件的接触结构中形成接触金属层的方法。 在一个实施例中，用于在半导体器件中沉积用于形成接触结构的接触金属层的方法包括：将沉积前体气体混合物脉动到设置在金属沉积处理室中的衬底的表面，将清洗气体混合物脉冲到边缘 其中所述吹扫气体混合物至少包含含氢气体和惰性气体，并且从所述第一沉积前体气体混合物在所述衬底上形成接触金属层。

公开(公告)号：US20130008984A1

公开(公告)日：2013-01-10

申请号：US13618741

申请日：2012-09-14

申请人： Hyman Lam ,  Bo Zheng ,  Hua Ai ,  Michael Jackson ,  Xiaoxiong (John) Yuan ,  Hou Gong Wang ,  Salvador P. Umotoy ,  Sang Ho Yu

发明人： Hyman Lam ,  Bo Zheng ,  Hua Ai ,  Michael Jackson ,  Xiaoxiong (John) Yuan ,  Hou Gong Wang ,  Salvador P. Umotoy ,  Sang Ho Yu

IPC分类号： C23C16/455

CPC分类号： C23C16/45565 ,  C23C16/4412 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/4558 ,  H01J37/32449 ,  Y10T137/87265

摘要： Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel.

摘要翻译： 本发明的实施例提供了诸如等离子体增强型ALD（PE-ALD）的原子层沉积（ALD）的装置和方法。 在一些实施例中，提供了一种PE-ALD室，其包括与其中具有基板支撑件的室主体耦合的室盖组件。 在一个实施例中，室盖组件具有入口歧管组件，其包含围绕集中通道的环形通道，其中集中通道延伸穿过入口歧管组件，并且入口歧管组件还包含从环形通道延伸的注入孔， 集中通道侧壁，集中通道。 室盖组件还包括布置在入口歧管组件下方的喷头组件，设置在入口歧管组件和喷头组件之间的水箱，以及设置在入口歧管组件上方并与入口歧管组件耦合的远程等离子体系统（RPS） 与集中通道的流体通信。

公开(公告)号：US08293015B2

公开(公告)日：2012-10-23

申请号：US13232317

申请日：2011-09-14

申请人： Hyman W. H. Lam ,  Bo Zheng ,  Hua Ai ,  Michael Jackson ,  Xiaoxiong Yuan ,  Hougong Wang ,  Salvador P. Umotoy ,  Sang Ho Yu

发明人： Hyman W. H. Lam ,  Bo Zheng ,  Hua Ai ,  Michael Jackson ,  Xiaoxiong Yuan ,  Hougong Wang ,  Salvador P. Umotoy ,  Sang Ho Yu

IPC分类号： C23C16/455 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/45565 ,  C23C16/4412 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/4558 ,  H01J37/32449 ,  Y10T137/87265

摘要： Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel. The chamber lid assembly further contains a showerhead assembly disposed below the inlet manifold assembly, a water box disposed between the inlet manifold assembly and the showerhead assembly, and a remote plasma system (RPS) disposed above and coupled with the inlet manifold assembly, and in fluid communication with the centralized channel.

公开(公告)号：US20120141667A1

公开(公告)日：2012-06-07

申请号：US13315906

申请日：2011-12-09

申请人： HOON KIM ,  SANG HO YU ,  SESHADRI GANGULI

发明人： HOON KIM ,  SANG HO YU ,  SESHADRI GANGULI

IPC分类号： C23C16/06 ,  C25D5/02

CPC分类号： C25D5/02 ,  C23C14/046 ,  C23C14/185 ,  C23C16/045 ,  C23C16/06 ,  H01L21/76843 ,  H01L21/76873

摘要： Methods for forming barrier/seed layers for interconnect structures are provided herein. In some embodiments, a method of processing a substrate having an opening formed in a first surface of the substrate, the opening having a sidewall and a bottom surface, the method may include forming a layer comprising manganese (Mn) and at least one of ruthenium (Ru) or cobalt (Co) on the sidewall and the bottom surface of the opening, the layer having a first surface adjacent to the sidewall and bottom surface of the opening and a second surface opposite the first surface, wherein the second surface comprises predominantly at least one of ruthenium (Ru) or cobalt (Co) and wherein a predominant quantity of manganese (Mn) in the layer is not disposed proximate the second surface; and depositing a conductive material on the layer to fill the opening.

摘要翻译： 本文提供了用于形成用于互连结构的势垒/种子层的方法。 在一些实施方案中，一种处理基材的方法，所述基材具有形成在基材的第一表面中的开口，所述开口具有侧壁和底部表面，所述方法可以包括形成包含锰（Mn）和至少一种钌的层 （Ru）或钴（Co）在所述开口的侧壁和底表面上，所述层具有与所述开口的侧壁和底表面相邻的第一表面和与所述第一表面相对的第二表面，其中所述第二表面主要包括 钌（Ru）或钴（Co）中的至少一种，并且其中该层中主要量的锰（Mn）不靠近第二表面设置; 以及在所述层上沉积导电材料以填充所述开口。

公开(公告)号：US07867900B2

公开(公告)日：2011-01-11

申请号：US12240816

申请日：2008-09-29

申请人： Wei Ti Lee ,  Mohd Fadzli Anwar Hassan ,  Ted Guo ,  Sang-Ho Yu

发明人： Wei Ti Lee ,  Mohd Fadzli Anwar Hassan ,  Ted Guo ,  Sang-Ho Yu

IPC分类号： H01L21/44

CPC分类号： H01L23/53214 ,  H01L21/02068 ,  H01L21/28518 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/485 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments herein provide methods for forming an aluminum contact on a cobalt silicide junction. In one embodiment, a method for forming materials on a substrate is provided which includes forming a cobalt silicide layer on a silicon-containing surface of the substrate during a silicidation process, forming a fluorinated sublimation film on the cobalt silicide layer during a plasma process, heating the substrate to a sublimation temperature to remove the fluorinated sublimation film, depositing a titanium-containing nucleation layer over the cobalt silicide layer, and depositing an aluminum-containing material over the titanium-containing nucleation layer. In one example, the method further provides forming the cobalt silicide layer by depositing a cobalt-containing layer on the silicon-containing surface, heating the substrate during a rapid thermal annealing (RTA) process, etching away any remaining portions of the cobalt-containing layer from the substrate, and subsequently heating the substrate during another RTA process.

摘要翻译： 本文的实施方案提供了在钴硅化物结上形成铝接触的方法。 在一个实施例中，提供了一种在衬底上形成材料的方法，包括在硅化过程中在衬底的含硅表面上形成钴硅化物层，在等离子体工艺期间在硅化钴层上形成氟化升华膜， 将基板加热到升华温度以除去氟化升华膜，在硅化钴层上沉积含钛成核层，并在含钛成核层上沉积含铝材料。 在一个实例中，该方法还提供通过在含硅表面上沉积含钴层来形成钴硅化物层，在快速热退火（RTA）工艺中加热衬底，蚀刻掉含钴的剩余部分 层，然后在另一RTA工艺期间加热衬底。

公开(公告)号：US20100102417A1

公开(公告)日：2010-04-29

申请号：US12606444

申请日：2009-10-27

申请人： Seshadri Ganguli ,  Srinivas Gandikota ,  Sang Ho Yu ,  Luis Felipe Hakim

发明人： Seshadri Ganguli ,  Srinivas Gandikota ,  Sang Ho Yu ,  Luis Felipe Hakim

IPC分类号： H01L29/00 ,  C23C16/34 ,  C23C16/44

CPC分类号： C23C16/45531 ,  C23C16/34 ,  C23C16/45542 ,  H01L21/28088 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76873 ,  H01L27/10873 ,  H01L28/60 ,  H01L29/4966 ,  H01L29/517 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/16

摘要： Embodiments provide a method for depositing or forming titanium aluminum nitride materials during a vapor deposition process, such as atomic layer deposition (ALD) or plasma-enhanced ALD (PE-ALD). In some embodiments, a titanium aluminum nitride material is formed by sequentially exposing a substrate to a titanium precursor and a nitrogen plasma to form a titanium nitride layer, exposing the titanium nitride layer to a plasma treatment process, and exposing the titanium nitride layer to an aluminum precursor while depositing an aluminum layer thereon. The process may be repeated multiple times to deposit a plurality of titanium nitride and aluminum layers. Subsequently, the substrate may be annealed to form the titanium aluminum nitride material from the plurality of layers. In other embodiments, the titanium aluminum nitride material may be formed by sequentially exposing the substrate to the nitrogen plasma and a deposition gas which contains the titanium and aluminum precursors.

摘要翻译： 实施例提供了在诸如原子层沉积（ALD）或等离子体增强ALD（PE-ALD）的气相沉积过程中沉积或形成氮化铝钛材料的方法。 在一些实施例中，通过将衬底依次暴露于钛前体和氮等离子体以形成氮化钛层，将氮化钛层暴露于等离子体处理工艺，并将氮化钛层暴露于 铝前体，同时在其上沉积铝层。 该过程可以重复多次以沉积多个氮化钛和铝层。 随后，可以将基板退火以从多个层形成氮化铝钛材料。 在其它实施例中，氮化铝钛材料可以通过将衬底依次暴露于氮等离子体和包含钛和铝前体的沉积气体来形成。

公开(公告)号：US20090087983A1

公开(公告)日：2009-04-02

申请号：US12240816

申请日：2008-09-29

申请人： WEI TI LEE ,  Mohd Fadzli Anwar Hassan ,  Ted Guo ,  Sang-Ho Yu

发明人： WEI TI LEE ,  Mohd Fadzli Anwar Hassan ,  Ted Guo ,  Sang-Ho Yu

IPC分类号： H01L21/44

CPC分类号： H01L23/53214 ,  H01L21/02068 ,  H01L21/28518 ,  H01L21/76876 ,  H01L21/76877 ,  H01L23/485 ,  H01L23/53223 ,  H01L2924/0002 ,  H01L2924/00

摘要： Embodiments herein provide methods for forming an aluminum contact on a cobalt silicide junction. In one embodiment, a method for forming materials on a substrate is provided which includes forming a cobalt silicide layer on a silicon-containing surface of the substrate during a silicidation process, forming a fluorinated sublimation film on the cobalt silicide layer during a plasma process, heating the substrate to a sublimation temperature to remove the fluorinated sublimation film, depositing a titanium-containing nucleation layer over the cobalt silicide layer, and depositing an aluminum-containing material over the titanium-containing nucleation layer. In one example, the method further provides forming the cobalt silicide layer by depositing a cobalt-containing layer on the silicon-containing surface, heating the substrate during a rapid thermal annealing (RTA) process, etching away any remaining portions of the cobalt-containing layer from the substrate, and subsequently heating the substrate during another RTA process.

摘要翻译： 本文的实施方案提供了在钴硅化物结上形成铝接触的方法。 在一个实施例中，提供了一种在衬底上形成材料的方法，包括在硅化过程中在衬底的含硅表面上形成钴硅化物层，在等离子体工艺期间在硅化钴层上形成氟化升华膜， 将基板加热到升华温度以除去氟化升华膜，在硅化钴层上沉积含钛成核层，并在含钛成核层上沉积含铝材料。 在一个实例中，该方法还提供通过在含硅表面上沉积含钴层来形成钴硅化物层，在快速热退火（RTA）工艺中加热衬底，蚀刻掉含钴的剩余部分 层，然后在另一RTA工艺期间加热衬底。

公开(公告)号：US20090004850A1

公开(公告)日：2009-01-01

申请号：US12111923

申请日：2008-04-29

申请人： SESHADRI GANGULI ,  SANG-HO YU ,  See-Eng Phan ,  Mei Chang ,  Amit Khandelwal ,  Hyoung-Chan Ha

发明人： SESHADRI GANGULI ,  SANG-HO YU ,  See-Eng Phan ,  Mei Chang ,  Amit Khandelwal ,  Hyoung-Chan Ha

IPC分类号： H01L21/44

CPC分类号： C23C16/18 ,  C23C16/42 ,  C23C16/45523 ,  C23C16/56 ,  H01L21/0206 ,  H01L21/02063 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/67207 ,  H01L21/68785 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L29/665 ,  H01L29/78

摘要： Embodiments of the invention described herein generally provide methods for forming cobalt silicide layers and metallic cobalt layers by using various deposition processes and annealing processes. In one embodiment, a method for forming a metallic silicide containing material on a substrate is provided which includes forming a metallic silicide material over a silicon-containing surface during a vapor deposition process by sequentially depositing a plurality of metallic silicide layers and silyl layers on the substrate, depositing a metallic capping layer over the metallic silicide material, heating the substrate during an annealing process, and depositing a metallic contact material over the barrier material. In one example, the metallic silicide layers and the metallic capping layer both contain cobalt. The cobalt silicide material may contain a silicon/cobalt atomic ratio of about 1.9 or greater, such as greater than about 2.0, or about 2.2 or greater.

摘要翻译： 本文描述的本发明的实施例通常提供通过使用各种沉积工艺和退火工艺来形成钴硅化物层和金属钴层的方法。 在一个实施例中，提供了一种用于在基板上形成含金属硅化物的材料的方法，其包括在气相沉积工艺期间在含硅表面上形成金属硅化物材料，通过在其上顺序地沉积多个金属硅化物层和甲硅烷基层 衬底，在所述金属硅化物材料上沉积金属覆盖层，在退火过程期间加热所述衬底，以及在所述阻挡材料上沉积金属接触材料。 在一个实例中，金属硅化物层和金属覆盖层都含有钴。 钴硅化物材料可以含有约1.9或更大，例如大于约2.0，或约2.2或更大的硅/钴原子比。

公开(公告)号：US20080268636A1

公开(公告)日：2008-10-30

申请号：US12171132

申请日：2008-07-10

申请人： Ki Hwan Yoon ,  Yonghwa Chris Cha ,  Sang Ho Yu ,  Hafiz Farooq Ahmad ,  Ho Sun Wee

发明人： Ki Hwan Yoon ,  Yonghwa Chris Cha ,  Sang Ho Yu ,  Hafiz Farooq Ahmad ,  Ho Sun Wee

IPC分类号： H01L21/768

CPC分类号： H01L21/76843 ,  C23C14/566 ,  C23C16/06 ,  C23C16/54 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76864 ,  H01L21/76876

摘要： Embodiments as described herein provide a method for depositing barrier layers and tungsten materials on substrates. In one embodiment, a method for depositing materials is provided which includes forming a barrier layer on a substrate, wherein the barrier layer contains a cobalt silicide layer and a metallic cobalt layer, exposing the barrier layer to a soak gas containing a reducing gas during a soak process, and forming a tungsten material over the barrier layer. In one example, the barrier layer may be formed by depositing a cobalt-containing material on a dielectric surface of the substrate and annealing the substrate to form the cobalt silicide layer from a lower portion of the cobalt-containing material and the metallic cobalt layer from an upper portion of the cobalt-containing material.

摘要翻译： 本文所述的实施例提供了一种在衬底上沉积阻挡层和钨材料的方法。 在一个实施例中，提供了一种用于沉积材料的方法，其包括在衬底上形成阻挡层，其中所述阻挡层包含钴硅化物层和金属钴层，将阻挡层暴露于含有还原气体的浸渍气体 浸泡工艺，并在阻挡层上形成钨材料。 在一个示例中，阻挡层可以通过在基底的电介质表面上沉积含钴材料并使基底退火以从含钴材料的下部和金属钴层形成钴硅化物层而形成， 含钴材料的上部。

公开(公告)号：US07416979B2

公开(公告)日：2008-08-26

申请号：US11456073

申请日：2006-07-06

申请人： Ki Hwan Yoon ,  Yonghwa Chris Cha ,  Sang Ho Yu ,  Hafiz Farooq Ahmad ,  Ho Sun Wee

发明人： Ki Hwan Yoon ,  Yonghwa Chris Cha ,  Sang Ho Yu ,  Hafiz Farooq Ahmad ,  Ho Sun Wee

IPC分类号： H01L21/00

CPC分类号： H01L21/76846 ,  H01L21/28518 ,  H01L21/2855 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76864

摘要： Embodiments are provided for a method to deposit barrier and tungsten materials on a substrate. In one embodiment, a method provides forming a barrier layer on a substrate and exposing the substrate to a silane gas to form a thin silicon-containing layer on the barrier layer during a soak process. The method further provides depositing a tungsten nucleation layer over the barrier layer and the thin silicon-containing layer during an atomic layer deposition process and depositing a tungsten bulk layer on the tungsten nucleation layer during a chemical vapor deposition process. In some examples, the barrier layer contains metallic cobalt and cobalt silicide, or metallic nickel and nickel silicide. In other examples, the barrier layer contains metallic titanium and titanium nitride, or metallic tantalum and tantalum nitride.

摘要翻译： 提供了一种在衬底上沉积阻挡层和钨材料的方法的实施例。 在一个实施例中，一种方法提供在衬底上形成阻挡层并将衬底暴露于硅烷气体，以在浸泡过程期间在阻挡层上形成薄的含硅层。 该方法还进一步在原子层沉积工艺期间在阻挡层和薄的含硅层上沉积钨成核层，并在化学气相沉积工艺期间在钨成核层上沉积钨体层。 在一些示例中，阻挡层包含金属钴和钴硅化物，或金属镍和镍硅化物。 在其它实例中，阻挡层包含金属钛和氮化钛，或金属钽和氮化钽。