公开(公告)号：US20100102417A1

公开(公告)日：2010-04-29

申请号：US12606444

申请日：2009-10-27

申请人： Seshadri Ganguli ,  Srinivas Gandikota ,  Sang Ho Yu ,  Luis Felipe Hakim

发明人： Seshadri Ganguli ,  Srinivas Gandikota ,  Sang Ho Yu ,  Luis Felipe Hakim

IPC分类号： H01L29/00 ,  C23C16/34 ,  C23C16/44

CPC分类号： C23C16/45531 ,  C23C16/34 ,  C23C16/45542 ,  H01L21/28088 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76873 ,  H01L27/10873 ,  H01L28/60 ,  H01L29/4966 ,  H01L29/517 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/16

摘要： Embodiments provide a method for depositing or forming titanium aluminum nitride materials during a vapor deposition process, such as atomic layer deposition (ALD) or plasma-enhanced ALD (PE-ALD). In some embodiments, a titanium aluminum nitride material is formed by sequentially exposing a substrate to a titanium precursor and a nitrogen plasma to form a titanium nitride layer, exposing the titanium nitride layer to a plasma treatment process, and exposing the titanium nitride layer to an aluminum precursor while depositing an aluminum layer thereon. The process may be repeated multiple times to deposit a plurality of titanium nitride and aluminum layers. Subsequently, the substrate may be annealed to form the titanium aluminum nitride material from the plurality of layers. In other embodiments, the titanium aluminum nitride material may be formed by sequentially exposing the substrate to the nitrogen plasma and a deposition gas which contains the titanium and aluminum precursors.

摘要翻译： 实施例提供了在诸如原子层沉积（ALD）或等离子体增强ALD（PE-ALD）的气相沉积过程中沉积或形成氮化铝钛材料的方法。 在一些实施例中，通过将衬底依次暴露于钛前体和氮等离子体以形成氮化钛层，将氮化钛层暴露于等离子体处理工艺，并将氮化钛层暴露于 铝前体，同时在其上沉积铝层。 该过程可以重复多次以沉积多个氮化钛和铝层。 随后，可以将基板退火以从多个层形成氮化铝钛材料。 在其它实施例中，氮化铝钛材料可以通过将衬底依次暴露于氮等离子体和包含钛和铝前体的沉积气体来形成。