发明申请
US20130189840A1 METHODS FOR FORMING A CONTACT METAL LAYER IN SEMICONDUCTOR DEVICES
失效
在半导体器件中形成接触金属层的方法
- 专利标题： METHODS FOR FORMING A CONTACT METAL LAYER IN SEMICONDUCTOR DEVICES
- 专利标题（中）： 在半导体器件中形成接触金属层的方法
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申请号： US13356002申请日： 2012-01-23
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公开(公告)号： US20130189840A1公开(公告)日： 2013-07-25
- 发明人: Xinyu Fu , Srinivas Gandikota , Sang Ho Yu , Kavita Shah , Yu Lei
- 申请人： Xinyu Fu , Srinivas Gandikota , Sang Ho Yu , Kavita Shah , Yu Lei
- 申请人地址： US CA Santa Clara
- 专利权人： APPLIED MATERIALS, INC.
- 当前专利权人： APPLIED MATERIALS, INC.
- 当前专利权人地址： US CA Santa Clara
- 主分类号： H01L21/285
- IPC分类号： H01L21/285
摘要：
Methods for forming a contact metal layer in a contact structure in semiconductor devices are provided in the present invention. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device includes pulsing a deposition precursor gas mixture to a surface of a substrate disposed in a metal deposition processing chamber, pulsing a purge gas mixture to an edge of the substrate, wherein the purge gas mixture includes at least a hydrogen containing gas and an inert gas, and forming a contact metal layer on the substrate from the first deposition precursor gas mixture.
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