公开(公告)号：US5912790A

公开(公告)日：1999-06-15

申请号：US818110

申请日：1997-03-13

Applicant: Hiroaki Yoda ,  Akio Hori ,  Michiko Hara ,  Naoyuki Inoue ,  Yuichi Ohsawa ,  Susumu Hashimoto ,  Takeo Sakakubo ,  Norio Ozawa ,  Teruo Sasho

Inventor： Hiroaki Yoda ,  Akio Hori ,  Michiko Hara ,  Naoyuki Inoue ,  Yuichi Ohsawa ,  Susumu Hashimoto ,  Takeo Sakakubo ,  Norio Ozawa ,  Teruo Sasho

IPC: G11B5/31 ,  G11B5/39 ,  G11B5/127 ,  G11B5/187

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3103 ,  G11B5/3116 ,  G11B5/313 ,  G11B5/3163 ,  G11B5/3967 ,  G11B2005/3996

Abstract: A composite magnetic head includes a recording head and a reproducing head. The recording head may be formed below or above the reproducing head. The lower of the recording and reproducing heads includes a first electrode. In addition, a conductive layer acting as a pole structure for the recording head includes a portion defining a hole through which a second electrode is made to contact the first electrode.

Abstract translation: 复合磁头包括记录头和再现头。 记录头可以形成在再现头的下方或上方。 记录和再现头的下部包括第一电极。 此外，作为记录头的极结构的导电层包括限定使第二电极与第一电极接触的孔的部分。

公开(公告)号：US09046549B2

公开(公告)日：2015-06-02

申请号：US13710718

申请日：2012-12-11

Applicant: Yoshihiro Higashi ,  Michiko Hara ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Hiromi Yuasa ,  Tomohiko Nagata

Inventor： Yoshihiro Higashi ,  Michiko Hara ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Hiromi Yuasa ,  Tomohiko Nagata

IPC: G01R3/00 ,  G01L9/16 ,  G01L1/12 ,  G01L9/00 ,  A61B5/021

CPC classification number: G01R3/00 ,  A61B5/02141 ,  A61B2562/0247 ,  G01L1/125 ,  G01L9/0048 ,  G01L9/16 ,  Y10T29/49007

Abstract: According to one embodiment, a method for manufacturing a pressure sensing device includes preparing a sensor unit and a mounting substrate. The sensor unit includes: a membrane body; and an element unit provided on the membrane body. The element unit includes: a first electrode; a second electrode; and a first magnetic layer provided between the first electrode and the second electrode and having magnetization in a first direction. The mounting substrate includes: a base; a first electrode pad provided on the base; and a second electrode pad provided on the base and provided apart from the first electrode pad. The method further includes joining the first electrode pad to the first electrode while heated, and joining the second electrode pad to the second electrode while heated, with an external magnetic field along the first direction applied to the sensor unit.

Abstract translation: 根据一个实施例，用于制造压力感测装置的方法包括制备传感器单元和安装基板。 传感器单元包括：膜体; 以及设置在膜体上的元件单元。 元件单元包括：第一电极; 第二电极; 以及设置在第一电极和第二电极之间并且在第一方向上具有磁化的第一磁性层。 安装基板包括：基座; 设置在基座上的第一电极焊盘; 以及设置在基座上并与第一电极焊盘分开设置的第二电极焊盘。 该方法还包括在加热时将第一电极焊盘接合到第一电极，并且在加热时将第二电极焊盘接合到第二电极，沿着施加到传感器单元的第一方向的外部磁场。

公开(公告)号：US08973446B2

公开(公告)日：2015-03-10

申请号：US13730016

申请日：2012-12-28

Applicant: Hideaki Fukuzawa ,  Akihiko Enamito ,  Osamu Nishimura ,  Michiko Hara ,  Hiromi Yuasa ,  Yoshihiko Fuji ,  Masayuki Kii ,  Eizo Fujisawa

Inventor： Hideaki Fukuzawa ,  Akihiko Enamito ,  Osamu Nishimura ,  Michiko Hara ,  Hiromi Yuasa ,  Yoshihiko Fuji ,  Masayuki Kii ,  Eizo Fujisawa

IPC: G01B7/16 ,  G01L9/00 ,  G01L9/16 ,  G01L1/12

CPC classification number: G01L1/12 ,  G01L1/125 ,  G01L9/005 ,  G01L9/008 ,  G01L9/16

Abstract: According to one embodiment, a pressure sensor includes a base, and a first sensor unit. The first sensor unit includes a first transducer thin film, a first strain sensing device and a second strain sensing device. The first strain sensing device includes a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first and the second magnetic layers. The second strain sensing device is provided apart from the first strain sensing device on the first membrane surface and provided at a location different from a location of the barycenter, the second strain sensing device including a third magnetic layer, a fourth magnetic layer, and a second intermediate layer provided between the third and the fourth magnetic layers, the first and the second intermediate layers being nonmagnetic. The first and the second strain sensing devices, and the barycenter are in a straight line.

Abstract translation: 根据一个实施例，压力传感器包括基座和第一传感器单元。 第一传感器单元包括第一换能器薄膜，第一应变感测装置和第二应变感测装置。 第一应变感测装置包括第一磁性层，第二磁性层和设置在第一和第二磁性层之间的第一中间层。 第二应变感测装置与第一膜表面上的第一应变感测装置分开设置，并且设置在与重心的位置不同的位置处，第二应变感测装置包括第三磁性层，第四磁性层和 第二中间层设置在第三和第四磁性层之间，第一和第二中间层是非磁性的。 第一和第二应变感测装置和重心处于直线。

公开(公告)号：US08958574B2

公开(公告)日：2015-02-17

申请号：US13536002

申请日：2012-06-28

Applicant: Hideaki Fukuzawa ,  Tatsuya Ohguro ,  Akihiro Kojima ,  Yoshiaki Sugizaki ,  Mariko Takayanagi ,  Yoshihiko Fuji ,  Akio Hori ,  Michiko Hara

Inventor： Hideaki Fukuzawa ,  Tatsuya Ohguro ,  Akihiro Kojima ,  Yoshiaki Sugizaki ,  Mariko Takayanagi ,  Yoshihiko Fuji ,  Akio Hori ,  Michiko Hara

IPC: H04R3/00 ,  G01L9/00 ,  H04R1/08 ,  B81C1/00 ,  H04R19/00 ,  H04R19/04 ,  H04R31/00

CPC classification number: B81C1/00158 ,  B81B2201/0264 ,  B81C1/00246 ,  B81C2203/0771 ,  G01L9/0042 ,  H04R1/08 ,  H04R19/005 ,  H04R19/04 ,  H04R31/00

Abstract: According to one embodiment, a strain and pressure sensing device includes a semiconductor circuit unit and a sensing unit. The semiconductor circuit unit includes a semiconductor substrate and a transistor. The transistor is provided on a semiconductor substrate. The sensing unit is provided on the semiconductor circuit unit, and has space and non-space portions. The non-space portion is juxtaposed with the space portion. The sensing unit further includes a movable beam, a strain sensing element unit, and first and second buried interconnects. The movable beam has fixed and movable portions, and includes first and second interconnect layers. The fixed portion is fixed to the non-space portion. The movable portion is separated from the transistor and extends from the fixed portion into the space portion. The strain sensing element unit is fixed to the movable portion. The first and second buried interconnects are provided in the non-space portion.

Abstract translation: 根据一个实施例，应变和压力感测装置包括半导体电路单元和感测单元。 半导体电路单元包括半导体衬底和晶体管。 晶体管设置在半导体衬底上。 感测单元设置在半导体电路单元上，并且具有空间和非空间部分。 非空间部分与空间部分并置。 感测单元还包括可移动光束，应变传感元件单元以及第一和第二掩埋互连。 可移动光束具有固定和可移动部分，并且包括第一和第二互连层。 固定部固定在非空间部。 可动部分与晶体管分离，并从固定部分延伸到空间部分。 应变传感元件单元固定在可动部上。 第一和第二掩埋互连件设置在非空间部分中。

公开(公告)号：US08446698B2

公开(公告)日：2013-05-21

申请号：US13233565

申请日：2011-09-15

Applicant: Yoshihiko Fuji ,  Michiko Hara ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Shuichi Murakami

Inventor： Yoshihiko Fuji ,  Michiko Hara ,  Hideaki Fukuzawa ,  Hiromi Yuasa ,  Shuichi Murakami

IPC: G11B5/48

CPC classification number: H01L43/08 ,  G01R33/093 ,  G11B5/3906 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/325

Abstract: A magnetoresistive element includes a lamination body and a pair of electrodes. The lamination body includes a first magnetic layer, a second magnetic layer, and a spacer layer. The spacer layer is provided between the first magnetic layer and the second magnetic layer and includes an oxide layer. The oxide layer includes at least one element selected from the group consisting of Zn, In, Sn, and Cd, and at least one element selected from the group consisting of Fe, Co, and Ni.

Abstract translation: 磁阻元件包括层叠体和一对电极。 层压体包括第一磁性层，第二磁性层和间隔层。 间隔层设置在第一磁性层和第二磁性层之间，并且包括氧化物层。 氧化物层包括选自Zn，In，Sn和Cd中的至少一种元素，以及选自Fe，Co和Ni中的至少一种元素。

公开(公告)号：US08125744B2

公开(公告)日：2012-02-28

申请号：US12076438

申请日：2008-03-18

Applicant: Masayuki Takagishi ,  Hitoshi Iwasaki ,  Masahiro Takashita ,  Michiko Hara ,  Dan Abels ,  Xin Li

Inventor： Masayuki Takagishi ,  Hitoshi Iwasaki ,  Masahiro Takashita ,  Michiko Hara ,  Dan Abels ,  Xin Li

IPC: G11B5/39

CPC classification number: G11B5/3983 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B5/398 ,  H01L43/08

Abstract: A current perpendicular to plane magneto-resistance effect element includes: a magneto-resistance effect film comprised of a fixed magnetization layer, a free magnetization layer, and a complex spacer layer including an insulating layer and current paths formed through the insulating layer; a biasing mechanism for stabilizing the free magnetization layer; a shielding mechanism for ensuring a reproducing resolution of the magneto-resistance effect element; and a pair of electrodes for flowing a current perpendicular to a film surface of the magneto-resistance effect element; wherein a resistance area product (RA:Ω×μm2) is set to 0.00062×√{square root over ((GAP))}×TW+0.06 when a track width of the magneto-resistance effect element is defined as TW (nm) and a gap length of the magneto-resistance effect element is defined as GAP (nm).

Abstract translation: 垂直于平面磁阻效应元件的电流包括：由固定磁化层，自由磁化层和包含绝缘层的复合间隔层和通过绝缘层形成的电流通路构成的磁阻效应膜; 用于稳定自由磁化层的偏置机构; 用于确保磁阻效应元件的再现分辨率的屏蔽机构; 以及一对电极，用于垂直于磁阻效应元件的膜表面流动电流; 其中，当磁阻效应元件的磁道宽度被定义为TW（nm）时，电阻面积乘积（RA:＆OHgr;×μm2）被设定为0.00062×√{（GAP））的平方根}×TW + 0.06 ），磁阻效应元件的间隙长度被定义为GAP（nm）。

公开(公告)号：US20110261478A1

公开(公告)日：2011-10-27

申请号：US13092044

申请日：2011-04-21

Applicant: Akihiko Takeo ,  Yoshihiko Fuji ,  Hiromi Yuasa ,  Michiko Hara ,  Shuichi Murakami ,  Hideaki Fukuzawa

Inventor： Akihiko Takeo ,  Yoshihiko Fuji ,  Hiromi Yuasa ,  Michiko Hara ,  Shuichi Murakami ,  Hideaki Fukuzawa

IPC: G11B5/02 ,  G11B5/39

CPC classification number: G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  H01F10/3254 ,  H01F10/3272 ,  H01F41/307 ,  H01F41/325 ,  H01L43/08 ,  Y10T428/1114

Abstract: According to one embodiment, a magnetoresistive element includes a stack and a pair of electrodes that allows electric current to flow through the stack in a direction perpendicular to a surface of the stack. The stack includes a cap layer, a magnetization pinned layer, a magnetization free layer provided between the cap layer and the magnetization pinned layer, a tunneling insulator provided between the magnetization pinned layer and the magnetization free layer, and a functional layer provided within the magnetization pinned layer, between the magnetization pinned layer and the tunneling insulator, between the tunneling insulator and the magnetization free layer, within the magnetization free layer, or between the magnetization free layer and the cap layer. The functional layer includes an oxide including at least one element selected from Zn, In, Sn and Cd and at least one element selected from Fe, Co and Ni.

Abstract translation: 根据一个实施例，磁阻元件包括堆叠和​​一对电极，其允许电流沿垂直于堆叠表面的方向流过堆叠。 堆叠包括盖层，磁化钉扎层，设置在盖层和磁化钉扎层之间的无磁化层，设置在磁化钉扎层和磁化自由层之间的隧道绝缘体，以及设置在磁化层中的功能层 在磁化固定层和隧道绝缘体之间，在隧道绝缘体和磁化自由层之间，在磁化自由层内，或在磁化自由层和覆盖层之间。 功能层包括包含选自Zn，In，Sn和Cd中的至少一种元素的氧化物和选自Fe，Co和Ni中的至少一种元素。

公开(公告)号：US20100092803A1

公开(公告)日：2010-04-15

申请号：US12585855

申请日：2009-09-25

Applicant: Hiromi Yuasa ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Shuichi Murakami ,  Michiko Hara ,  Kunliang Zhang ,  Min Li ,  Erhard Schreck

Inventor： Hiromi Yuasa ,  Hideaki Fukuzawa ,  Yoshihiko Fuji ,  Shuichi Murakami ,  Michiko Hara ,  Kunliang Zhang ,  Min Li ,  Erhard Schreck

IPC: G11B5/706 ,  B01J19/08 ,  C23C16/44

CPC classification number: G11B5/3906 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  C23C8/36 ,  C23C14/5833 ,  C23C14/584 ,  C23C14/5846 ,  C23C14/5853 ,  G01R33/093 ,  G11B2005/3996 ,  H01F10/3259 ,  H01F10/3272 ,  H01F41/307

Abstract: A method for manufacturing a magneto-resistance effect element is provided. The magneto-resistance effect element includes a first magnetic layer including a ferromagnetic material, a second magnetic layer including a ferromagnetic material and a spacer layer provided between the first magnetic layer and the second magnetic layer, the spacer layer having an insulating layer and a conductive portion penetrating through the insulating layer. The method includes: forming a film to be a base material of the spacer layer; performing a first treatment using a gas including at least one of oxygen molecules, oxygen atoms, oxygen ions, oxygen plasma and oxygen radicals on the film; and performing a second treatment using a gas including at least one of hydrogen molecules, hydrogen atoms, hydrogen ions, hydrogen plasma, hydrogen radicals, deuterium molecules, deuterium atoms, deuterium ions, deuterium plasma and deuterium radicals on the film submitted to the first treatment.

Abstract translation: 提供一种制造磁阻效应元件的方法。 磁阻效应元件包括包括铁磁材料的第一磁性层，包括铁磁材料的第二磁性层和设置在第一磁性层和第二磁性层之间的间隔层，间隔层具有绝缘层和导电 部分穿透绝缘层。 该方法包括：将膜形成为间隔层的基材; 使用包含氧分子，氧原子，氧离子，氧等离子体和氧自由基中的至少一种的气体进行第一处理; 氢原子，氢离子，氢等离子体，氢原子，氘分子，氘原子，氘离子，氘离子和氘原子中的至少一种的气体进行第二次处理。 。

公开(公告)号：US20080239591A1

公开(公告)日：2008-10-02

申请号：US12073895

申请日：2008-03-11

Applicant: Yoshihiko Fuji ,  Hideaki Fukuzama ,  Hiromi Yuasa ,  Kunliang Zhang ,  Min Li ,  Michiko Hara ,  Yoshinari Kurosaki

Inventor： Yoshihiko Fuji ,  Hideaki Fukuzama ,  Hiromi Yuasa ,  Kunliang Zhang ,  Min Li ,  Michiko Hara ,  Yoshinari Kurosaki

IPC: G11B5/33

CPC classification number: G11B5/3906 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/39 ,  G11B5/3909 ,  G11B2005/3996 ,  H01L43/08 ,  Y10S977/943

Abstract: A magneto-resistance effect element, including:a fixed magnetization layer of which a magnetization is substantially fixed in one direction; a free magnetization layer of which a magnetization is rotated in accordance with an external magnetic field and which is formed opposite to the fixed magnetization layer; a spacer layer including a current confining layer with an insulating layer and a conductor to pass a current through the insulating layer in a thickness direction thereof and which is located between the fixed magnetization layer and the free magnetization layer; a thin film layer which is located in a side opposite to the spacer layer relative to the free magnetization layer; and a functional layer containing at least one element selected from the group consisting of Si, Mg, B, Al which is formed in or on at least one of the fixed magnetization layer, the free magnetization layer and the thin film layer.

Abstract translation: 一种磁电阻效应元件，包括：固定磁化层，其一个方向上的磁化基本固定; 自由磁化层，其磁化根据外部磁场而旋转并与固定磁化层相对形成; 间隔层，其包括具有绝缘层的电流限制层和导体，以使电流在其厚度方向上穿过绝缘层并位于固定磁化层和自由磁化层之间; 薄膜层，相对于自由磁化层位于与间隔层相反的一侧; 以及功能层，其含有选自由固定磁化层，自由磁化层和薄膜层中的至少一个中形成的Si，Mg，B，Al中的至少一种元素。

公开(公告)号：US06770210B2

公开(公告)日：2004-08-03

申请号：US10059198

申请日：2002-01-31

Applicant: Susumu Hashimoto ,  Yuichi Ohsawa ,  Michiko Hara

Inventor： Susumu Hashimoto ,  Yuichi Ohsawa ,  Michiko Hara

IPC: G44C122

CPC classification number: H01L43/12 ,  Y10T29/49032

Abstract: There is provided a magnetoresistance effect element which is capable of causing a large sense current to flow between electrodes and which has a smaller dispersion in direction of magnetization of a CPP element based on a magnetic field due to the sense current and has a lager reproducing output, and a method for producing the same. The magnetoresistance effect element is produced by: after forming a first electrode, forming a magnetoresistance effect film on the first electrode; applying a self-condensing organic resist on the magnetoresistance effect film, and thereafter, causing the organic resist to be droplets; subsequently, forming an insulating film thereon, and thereafter, removing the organic resist to form a groove portion in the insulating film to expose the top surface of the magnetoresistance effect film; and filling the groove portion with an electrode material to form a second electrode.

Abstract translation: 提供了一种磁电阻效应元件，其能够导致大的感测电流在电极之间流动，并且由于感测电流而基于磁场具有较小的CPP元件的磁化方向的偏移，并且具有较大的再现输出 ，及其制造方法。 磁阻效应元件通过以下方式产生：在形成第一电极之后，在第一电极上形成磁阻效应膜; 在磁阻效应膜上施加自凝聚有机抗蚀剂，然后使有机抗蚀剂成为液滴; 随后在其上形成绝缘膜，然后除去有机抗蚀剂以在绝缘膜中形成沟槽部分以暴露磁阻效应膜的顶表面; 并用电极材料填充槽部分以形成第二电极。