Invention Grant
- Patent Title: Pressure sensor and microphone
- Patent Title (中): 压力传感器和麦克风
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Application No.: US13730016Application Date: 2012-12-28
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Publication No.: US08973446B2Publication Date: 2015-03-10
- Inventor: Hideaki Fukuzawa , Akihiko Enamito , Osamu Nishimura , Michiko Hara , Hiromi Yuasa , Yoshihiko Fuji , Masayuki Kii , Eizo Fujisawa
- Applicant: Hideaki Fukuzawa , Akihiko Enamito , Osamu Nishimura , Michiko Hara , Hiromi Yuasa , Yoshihiko Fuji , Masayuki Kii , Eizo Fujisawa
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & L.L.P.
- Priority: JP2012-078361 20120329
- Main IPC: G01B7/16
- IPC: G01B7/16 ; G01L9/00 ; G01L9/16 ; G01L1/12

Abstract:
According to one embodiment, a pressure sensor includes a base, and a first sensor unit. The first sensor unit includes a first transducer thin film, a first strain sensing device and a second strain sensing device. The first strain sensing device includes a first magnetic layer, a second magnetic layer, and a first intermediate layer provided between the first and the second magnetic layers. The second strain sensing device is provided apart from the first strain sensing device on the first membrane surface and provided at a location different from a location of the barycenter, the second strain sensing device including a third magnetic layer, a fourth magnetic layer, and a second intermediate layer provided between the third and the fourth magnetic layers, the first and the second intermediate layers being nonmagnetic. The first and the second strain sensing devices, and the barycenter are in a straight line.
Public/Granted literature
- US20130255393A1 PRESSURE SENSOR AND MICROPHONE Public/Granted day:2013-10-03
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